Abstract

Two-dimensional (2D) Transition Metal Dichalcogenide semiconductor (TMDs) nanocircuits are deterministically engineered over large-scale substrates. The original approach combines large-area physical growth of 2D TMDs layer with high resolution thermal-Scanning Probe Lithography (t-SPL), to re-shape the ultra-thin semiconducting layers at the nanoscale level. We demonstrate the additive nanofabrication of few-layer MoS₂ nanostructures, grown in the 2H-semiconducting TMD phase, as shown by their Raman vibrational fingerprints and by their optoelectronic response. The electronic signatures of the MoS₂ nanostructures are locally identified by Kelvin probe force microscopy providing chemical and compositional contrast at the nanometer scale. Finally, the potential role of the 2D TMD nanocircuits as building blocks of deterministic 2D semiconducting interconnections is demonstrated by high-resolution local conductivity maps showing the competitive transport properties of these large-area nanolayers.

Abstract

Two-dimensional (2D) Transition Metal Dichalcogenide semiconductor (TMDs) nanocircuits are deterministically engineered over large-scale substrates. The original approach combines large-area physical growth of 2D TMDs layer with high resolution thermal-Scanning Probe Lithography (t-SPL), to re-shape the ultra-thin semiconducting layers at the nanoscale level. We demonstrate the additive nanofabrication of few-layer MoS₂ nanostructures, grown in the 2H-semiconducting TMD phase, as shown by their Raman vibrational fingerprints and by their optoelectronic response. The electronic signatures of the MoS₂ nanostructures are locally identified by Kelvin probe force microscopy providing chemical and compositional contrast at the nanometer scale. Finally, the potential role of the 2D TMD nanocircuits as building blocks of deterministic 2D semiconducting interconnections is demonstrated by high-resolution local conductivity maps showing the competitive transport properties of these large-area nanolayers.

Abstract

Two-dimensional (2D) Transition Metal Dichalcogenide semiconductor (TMDs) nanocircuits are deterministically engineered over large-scale substrates. The original approach combines large-area physical growth of 2D TMDs layer with high resolution thermal-Scanning Probe Lithography (t-SPL), to re-shape the ultra-thin semiconducting layers at the nanoscale level. We demonstrate the additive nanofabrication of few-layer MoS₂ nanostructures, grown in the 2H-semiconducting TMD phase, as shown by their Raman vibrational fingerprints and by their optoelectronic response. The electronic signatures of the MoS₂ nanostructures are locally identified by Kelvin probe force microscopy providing chemical and compositional contrast at the nanometer scale. Finally, the potential role of the 2D TMD nanocircuits as building blocks of deterministic 2D semiconducting interconnections is demonstrated by high-resolution local conductivity maps showing the competitive transport properties of these large-area nanolayers.

Abstract

Two-dimensional (2D) Transition Metal Dichalcogenide semiconductor (TMDs) nanocircuits are deterministically engineered over large-scale substrates. The original approach combines large-area physical growth of 2D TMDs layer with high resolution thermal-Scanning Probe Lithography (t-SPL), to re-shape the ultra-thin semiconducting layers at the nanoscale level. We demonstrate the additive nanofabrication of few-layer MoS₂ nanostructures, grown in the 2H-semiconducting TMD phase, as shown by their Raman vibrational fingerprints and by their optoelectronic response. The electronic signatures of the MoS₂ nanostructures are locally identified by Kelvin probe force microscopy providing chemical and compositional contrast at the nanometer scale. Finally, the potential role of the 2D TMD nanocircuits as building blocks of deterministic 2D semiconducting interconnections is demonstrated by high-resolution local conductivity maps showing the competitive transport properties of these large-area nanolayers.