Research paper
Experimental GrowthExperimental CharacterizationExploring 2D Materials by High Pressure Synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs
N.D. Zhigadlo
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations1 figure
1 preparation4 characterizations1 figure
1 preparation4 characterizations1 property1 figure
1 preparation4 characterizations1 property1 figure
1 preparation4 characterizations2 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Conversion Rate | b-P crystal conversion rate | 80% | — | |||
| Stoichiometry | true stoichiometry | Ge0.47As0.53 | — | |||
| Interlayer Energy | interlayer energy | 0.19eV/atom | — | |||
| Band Gap | monolayer/bilayer/trilayer/bulk gaps | 1.558/1.123/0.84/0.21eV | — |
Related documents with shared materials, methods, properties, or citations.
Unidirectional domain growth of hexagonal boron nitride thin films
Anisotropic thermo-mechanical response of layered hexagonal boron nitride and black phosphorus: application as a simultaneous pressure and temperature sensor
Growth of rhombohedral boron nitride crystals using an iron flux
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Layers of planar hexagonal heterostructures modeled by quantum graphs
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Rhombohedral and Turbostratic Boron Nitride Polytypes Investigated by X-ray Absorption Spectroscopy
PHYSICALLY FUNCTIONALIZED GRAPHENE HYBRID COMPOSITE (GHC) AND ITS APPLICATIONS
Super Moiré Domain Tessellations, Sliding Ferroelectricity, and Reconfigurable Quantum Dot Arrays in Twisted Trilayer Hexagonal Boron Nitride
Effects of electrostatic interactions on Kapitza resistance in hexagonal boron nitride-water interfaces
Moiré Phonon Condensation in Magic-Angle Twisted Bilayer Graphene
METHOD FOR MANUFACTURING GRAPHENE FIBER
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations1 figure
1 preparation4 characterizations1 figure
1 preparation4 characterizations1 property1 figure
1 preparation4 characterizations1 property1 figure
1 preparation4 characterizations2 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Conversion Rate | b-P crystal conversion rate | 80% | — | |||
| Stoichiometry | true stoichiometry | Ge0.47As0.53 | — | |||
| Interlayer Energy | interlayer energy | 0.19eV/atom | — | |||
| Band Gap | monolayer/bilayer/trilayer/bulk gaps | 1.558/1.123/0.84/0.21eV | — |
Related documents with shared materials, methods, properties, or citations.
Unidirectional domain growth of hexagonal boron nitride thin films
Anisotropic thermo-mechanical response of layered hexagonal boron nitride and black phosphorus: application as a simultaneous pressure and temperature sensor
Growth of rhombohedral boron nitride crystals using an iron flux
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Layers of planar hexagonal heterostructures modeled by quantum graphs
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Rhombohedral and Turbostratic Boron Nitride Polytypes Investigated by X-ray Absorption Spectroscopy
PHYSICALLY FUNCTIONALIZED GRAPHENE HYBRID COMPOSITE (GHC) AND ITS APPLICATIONS
Super Moiré Domain Tessellations, Sliding Ferroelectricity, and Reconfigurable Quantum Dot Arrays in Twisted Trilayer Hexagonal Boron Nitride
Effects of electrostatic interactions on Kapitza resistance in hexagonal boron nitride-water interfaces
Moiré Phonon Condensation in Magic-Angle Twisted Bilayer Graphene
METHOD FOR MANUFACTURING GRAPHENE FIBER
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations1 figure
1 preparation4 characterizations1 figure
1 preparation4 characterizations1 property1 figure
1 preparation4 characterizations1 property1 figure
1 preparation4 characterizations2 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Conversion Rate | b-P crystal conversion rate | 80% | — | |||
| Stoichiometry | true stoichiometry | Ge0.47As0.53 | — | |||
| Interlayer Energy | interlayer energy | 0.19eV/atom | — | |||
| Band Gap | monolayer/bilayer/trilayer/bulk gaps | 1.558/1.123/0.84/0.21eV | — |
Related documents with shared materials, methods, properties, or citations.
Unidirectional domain growth of hexagonal boron nitride thin films
Anisotropic thermo-mechanical response of layered hexagonal boron nitride and black phosphorus: application as a simultaneous pressure and temperature sensor
Growth of rhombohedral boron nitride crystals using an iron flux
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Layers of planar hexagonal heterostructures modeled by quantum graphs
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Rhombohedral and Turbostratic Boron Nitride Polytypes Investigated by X-ray Absorption Spectroscopy
PHYSICALLY FUNCTIONALIZED GRAPHENE HYBRID COMPOSITE (GHC) AND ITS APPLICATIONS
Super Moiré Domain Tessellations, Sliding Ferroelectricity, and Reconfigurable Quantum Dot Arrays in Twisted Trilayer Hexagonal Boron Nitride
Effects of electrostatic interactions on Kapitza resistance in hexagonal boron nitride-water interfaces
Moiré Phonon Condensation in Magic-Angle Twisted Bilayer Graphene
METHOD FOR MANUFACTURING GRAPHENE FIBER
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation4 characterizations1 figure
1 preparation4 characterizations1 figure
1 preparation4 characterizations1 property1 figure
1 preparation4 characterizations1 property1 figure
1 preparation4 characterizations2 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Conversion Rate | b-P crystal conversion rate | 80% | — | |||
| Stoichiometry | true stoichiometry | Ge0.47As0.53 | — | |||
| Interlayer Energy | interlayer energy | 0.19eV/atom | — | |||
| Band Gap | monolayer/bilayer/trilayer/bulk gaps | 1.558/1.123/0.84/0.21eV | — |
Related documents with shared materials, methods, properties, or citations.
Unidirectional domain growth of hexagonal boron nitride thin films
Anisotropic thermo-mechanical response of layered hexagonal boron nitride and black phosphorus: application as a simultaneous pressure and temperature sensor
Growth of rhombohedral boron nitride crystals using an iron flux
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Layers of planar hexagonal heterostructures modeled by quantum graphs
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Rhombohedral and Turbostratic Boron Nitride Polytypes Investigated by X-ray Absorption Spectroscopy
PHYSICALLY FUNCTIONALIZED GRAPHENE HYBRID COMPOSITE (GHC) AND ITS APPLICATIONS
Super Moiré Domain Tessellations, Sliding Ferroelectricity, and Reconfigurable Quantum Dot Arrays in Twisted Trilayer Hexagonal Boron Nitride
Effects of electrostatic interactions on Kapitza resistance in hexagonal boron nitride-water interfaces
Moiré Phonon Condensation in Magic-Angle Twisted Bilayer Graphene
METHOD FOR MANUFACTURING GRAPHENE FIBER