Patent
US 11,621,365WATER SOLUBLE OXIDE LIFTOFF LAYERS FOR GaAs PHOTOVOLTAICS
Andrew Gordon NORMAN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,621,365Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts and embodiment of the step-by-step cost breakdown for a single junction, 28% efficiency, GaAs cell with five times substrate reuse. [0010] FIG s. …
FIG. 2c is a diagram depicting the similarity between SA O and STO crystal structures. [0011] FIG s. 3a and 3b depict the close coincidence site lattice match …
FIG. 3, GaAs is very close to being lattice matched to SA O after a 45 0 rotation of the cubic lattices. Cubic, zincblende GaAs has a lattice parameter of …
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 6a depicts XRD data for ST O/SA O templates deposited on ST O (001) substrates.
FIG. 7 depicts TEM data for ST O/SA O templates deposited on ST O (001) substrates. [0016]
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 9 depicts an EBSD map of the Ge/SA O/ST O templates. [0018]
FIG. 10 depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates. [0019]
FIG. 11 depicts an EBSD map of the GaAs/ST O/SA O/ST O templates.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making photovoltaics comprising providing a water- soluble lift off layer selected from the group consisting of Sr₃A 1206, Sr₃Ga₂ O6, Eu₃A 1206, and Ca₃A 206 on a substrate; epitaxially growing a GaAs layer upon the water-soluble lift off layer; and removing the GaAs layer by applying water to the water-soluble lift off layer to separate the GaAs layer from the substrate. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
A method for epitaxially growing GaAs comprising providing a SrTi O 3 substrate layer and a water-soluble Sr₃A 206 lift off layer [[for]]; epitaxially growing GaAs on the water-soluble lift off layer by metalorganic vapor phase epitaxy (MOVPE) and separating the grown GaAs from the SrTi O 3 substrate layer by applying water to the water-soluble lift off layer. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
A method for epitaxially growing a compound selected from the group consisting of Si or I nP comprising providing a SrTi O 3 substrate layer and a water-soluble lift off layer selected from the group consisting of Sr₃A 1206, Sr₃ Ga₂O6, Eu₃A 206, and Ca₃A 206 [[for]]; epitaxially growing Si or I nP on the water-soluble lift off layer by metalorganic vapor phase epitaxy (MO V
Layer stacks claimed or described, ordered top of device to substrate.
GaAs photovoltaic with water-soluble lift-off layer
STO/SAO/STO template for GaAs MOVPE growth
Materials described outside the worked examples.
Sr₃Al₂O₆
Sr₃Ga₂O₆
Eu₃Al₂O₆
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2c is a diagram depicting the similarity between SA O and STO crystal structures. [0011] FIG s. 3a and 3b depict the close coincidence site lattice match …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Xrd Lattice Constant A | 1.5848 nm | Sr₃Al₂O₆ |
Xrd Lattice Constant A |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,621,365Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts and embodiment of the step-by-step cost breakdown for a single junction, 28% efficiency, GaAs cell with five times substrate reuse. [0010] FIG s. …
FIG. 2c is a diagram depicting the similarity between SA O and STO crystal structures. [0011] FIG s. 3a and 3b depict the close coincidence site lattice match …
FIG. 3, GaAs is very close to being lattice matched to SA O after a 45 0 rotation of the cubic lattices. Cubic, zincblende GaAs has a lattice parameter of …
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 6a depicts XRD data for ST O/SA O templates deposited on ST O (001) substrates.
FIG. 7 depicts TEM data for ST O/SA O templates deposited on ST O (001) substrates. [0016]
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 9 depicts an EBSD map of the Ge/SA O/ST O templates. [0018]
FIG. 10 depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates. [0019]
FIG. 11 depicts an EBSD map of the GaAs/ST O/SA O/ST O templates.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making photovoltaics comprising providing a water- soluble lift off layer selected from the group consisting of Sr₃A 1206, Sr₃Ga₂ O6, Eu₃A 1206, and Ca₃A 206 on a substrate; epitaxially growing a GaAs layer upon the water-soluble lift off layer; and removing the GaAs layer by applying water to the water-soluble lift off layer to separate the GaAs layer from the substrate. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
A method for epitaxially growing GaAs comprising providing a SrTi O 3 substrate layer and a water-soluble Sr₃A 206 lift off layer [[for]]; epitaxially growing GaAs on the water-soluble lift off layer by metalorganic vapor phase epitaxy (MOVPE) and separating the grown GaAs from the SrTi O 3 substrate layer by applying water to the water-soluble lift off layer. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
A method for epitaxially growing a compound selected from the group consisting of Si or I nP comprising providing a SrTi O 3 substrate layer and a water-soluble lift off layer selected from the group consisting of Sr₃A 1206, Sr₃ Ga₂O6, Eu₃A 206, and Ca₃A 206 [[for]]; epitaxially growing Si or I nP on the water-soluble lift off layer by metalorganic vapor phase epitaxy (MO V
Layer stacks claimed or described, ordered top of device to substrate.
GaAs photovoltaic with water-soluble lift-off layer
STO/SAO/STO template for GaAs MOVPE growth
Materials described outside the worked examples.
Sr₃Al₂O₆
Sr₃Ga₂O₆
Eu₃Al₂O₆
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2c is a diagram depicting the similarity between SA O and STO crystal structures. [0011] FIG s. 3a and 3b depict the close coincidence site lattice match …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Xrd Lattice Constant A | 1.5848 nm | Sr₃Al₂O₆ |
Xrd Lattice Constant A |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,621,365Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts and embodiment of the step-by-step cost breakdown for a single junction, 28% efficiency, GaAs cell with five times substrate reuse. [0010] FIG s. …
FIG. 2c is a diagram depicting the similarity between SA O and STO crystal structures. [0011] FIG s. 3a and 3b depict the close coincidence site lattice match …
FIG. 3, GaAs is very close to being lattice matched to SA O after a 45 0 rotation of the cubic lattices. Cubic, zincblende GaAs has a lattice parameter of …
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 6a depicts XRD data for ST O/SA O templates deposited on ST O (001) substrates.
FIG. 7 depicts TEM data for ST O/SA O templates deposited on ST O (001) substrates. [0016]
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 9 depicts an EBSD map of the Ge/SA O/ST O templates. [0018]
FIG. 10 depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates. [0019]
FIG. 11 depicts an EBSD map of the GaAs/ST O/SA O/ST O templates.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making photovoltaics comprising providing a water- soluble lift off layer selected from the group consisting of Sr₃A 1206, Sr₃Ga₂ O6, Eu₃A 1206, and Ca₃A 206 on a substrate; epitaxially growing a GaAs layer upon the water-soluble lift off layer; and removing the GaAs layer by applying water to the water-soluble lift off layer to separate the GaAs layer from the substrate. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
A method for epitaxially growing GaAs comprising providing a SrTi O 3 substrate layer and a water-soluble Sr₃A 206 lift off layer [[for]]; epitaxially growing GaAs on the water-soluble lift off layer by metalorganic vapor phase epitaxy (MOVPE) and separating the grown GaAs from the SrTi O 3 substrate layer by applying water to the water-soluble lift off layer. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
A method for epitaxially growing a compound selected from the group consisting of Si or I nP comprising providing a SrTi O 3 substrate layer and a water-soluble lift off layer selected from the group consisting of Sr₃A 1206, Sr₃ Ga₂O6, Eu₃A 206, and Ca₃A 206 [[for]]; epitaxially growing Si or I nP on the water-soluble lift off layer by metalorganic vapor phase epitaxy (MO V
Layer stacks claimed or described, ordered top of device to substrate.
GaAs photovoltaic with water-soluble lift-off layer
STO/SAO/STO template for GaAs MOVPE growth
Materials described outside the worked examples.
Sr₃Al₂O₆
Sr₃Ga₂O₆
Eu₃Al₂O₆
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2c is a diagram depicting the similarity between SA O and STO crystal structures. [0011] FIG s. 3a and 3b depict the close coincidence site lattice match …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Xrd Lattice Constant A | 1.5848 nm | Sr₃Al₂O₆ |
Xrd Lattice Constant A |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,621,365Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts and embodiment of the step-by-step cost breakdown for a single junction, 28% efficiency, GaAs cell with five times substrate reuse. [0010] FIG s. …
FIG. 2c is a diagram depicting the similarity between SA O and STO crystal structures. [0011] FIG s. 3a and 3b depict the close coincidence site lattice match …
FIG. 3, GaAs is very close to being lattice matched to SA O after a 45 0 rotation of the cubic lattices. Cubic, zincblende GaAs has a lattice parameter of …
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 6a depicts XRD data for ST O/SA O templates deposited on ST O (001) substrates.
FIG. 7 depicts TEM data for ST O/SA O templates deposited on ST O (001) substrates. [0016]
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 9 depicts an EBSD map of the Ge/SA O/ST O templates. [0018]
FIG. 10 depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates. [0019]
FIG. 11 depicts an EBSD map of the GaAs/ST O/SA O/ST O templates.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making photovoltaics comprising providing a water- soluble lift off layer selected from the group consisting of Sr₃A 1206, Sr₃Ga₂ O6, Eu₃A 1206, and Ca₃A 206 on a substrate; epitaxially growing a GaAs layer upon the water-soluble lift off layer; and removing the GaAs layer by applying water to the water-soluble lift off layer to separate the GaAs layer from the substrate. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
A method for epitaxially growing GaAs comprising providing a SrTi O 3 substrate layer and a water-soluble Sr₃A 206 lift off layer [[for]]; epitaxially growing GaAs on the water-soluble lift off layer by metalorganic vapor phase epitaxy (MOVPE) and separating the grown GaAs from the SrTi O 3 substrate layer by applying water to the water-soluble lift off layer. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
A method for epitaxially growing a compound selected from the group consisting of Si or I nP comprising providing a SrTi O 3 substrate layer and a water-soluble lift off layer selected from the group consisting of Sr₃A 1206, Sr₃ Ga₂O6, Eu₃A 206, and Ca₃A 206 [[for]]; epitaxially growing Si or I nP on the water-soluble lift off layer by metalorganic vapor phase epitaxy (MO V
Layer stacks claimed or described, ordered top of device to substrate.
GaAs photovoltaic with water-soluble lift-off layer
STO/SAO/STO template for GaAs MOVPE growth
Materials described outside the worked examples.
Sr₃Al₂O₆
Sr₃Ga₂O₆
Eu₃Al₂O₆
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2c is a diagram depicting the similarity between SA O and STO crystal structures. [0011] FIG s. 3a and 3b depict the close coincidence site lattice match …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Xrd Lattice Constant A | 1.5848 nm | Sr₃Al₂O₆ |
Xrd Lattice Constant A |
Related documents with shared materials, methods, properties, or citations.
Ca₃Al₂O₆
GaAs
SrTiO₃
Si
InP
Ge
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 6a depicts XRD data for ST O/SA O templates deposited on ST O (001) substrates.
FIG. 7 depicts TEM data for ST O/SA O templates deposited on ST O (001) substrates. [0016]
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 10 depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates. [0019]
| 0.5653 nm |
GaAs |
Pressure | 1e-9 Torr | — |
Ca₃Al₂O₆
GaAs
SrTiO₃
Si
InP
Ge
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 6a depicts XRD data for ST O/SA O templates deposited on ST O (001) substrates.
FIG. 7 depicts TEM data for ST O/SA O templates deposited on ST O (001) substrates. [0016]
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 10 depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates. [0019]
| 0.5653 nm |
GaAs |
Pressure | 1e-9 Torr | — |
Ca₃Al₂O₆
GaAs
SrTiO₃
Si
InP
Ge
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 6a depicts XRD data for ST O/SA O templates deposited on ST O (001) substrates.
FIG. 7 depicts TEM data for ST O/SA O templates deposited on ST O (001) substrates. [0016]
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 10 depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates. [0019]
| 0.5653 nm |
GaAs |
Pressure | 1e-9 Torr | — |
Ca₃Al₂O₆
GaAs
SrTiO₃
Si
InP
Ge
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 4c depicts scanning transmission electron microscopy (STEM) energy dispersive x-ray spectroscopy (EDS) atomic percent maps that show a SA O layer having a …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 5 a depicts XRD data of epitaxial SA O (100) on ST O (100) substrate after ex situ anneal. FIG. S b depicts a TEM image: SA O layer closest to ST O …
FIG. 6a depicts XRD data for ST O/SA O templates deposited on ST O (001) substrates.
FIG. 7 depicts TEM data for ST O/SA O templates deposited on ST O (001) substrates. [0016]
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 8a depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates.
FIG. 10 depicts XRD data for ST O/SA O templates deposited on Ge (001) substrates. [0019]
| 0.5653 nm |
GaAs |
Pressure | 1e-9 Torr | — |