Patent
Atlas literature
Patent
US 12,221,719 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A illustrates a scanning electron microscope (SEM) image of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanow- ires under no nitrogen plasma pressure.
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 5 is a 4K µ-PL spectrum variation for the nitride- containing NWs prepared at different V/III BEP ratios.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 7B.
FIG. 8B.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing a core-shell nanowire, the method comprising: forming a nanowire core by depositing first precursor sources on a growth substrate; and surrounding the nanowire core with a first shell by depos-iting the first precursor sources on the nanowire core in presence of nitrogen (N) plasma; wherein the core-shell nanowire is grown vertically rela-tive to the growth substrate; and wherein the first precursor sources are gallium (Ga), arsenic (As), and antimony (Sb).
The method of claim 1, further comprising; surround-ing the first shell with a second shell by depositing second precursor sources on the first shell, wherein the second precursor sources for the second shell are gallium (Ga), aluminum (Al), and arsenic (As).
The method of claim 1, wherein the forming the nanowire core comprises depositing Ga, then additionally depositing As and Sb while continuing to deposit Ga.
The method of claim 1, wherein the growth substrate is p-type silicon.
The method of claim 1, wherein the core-shell nanowire is grown vertically to a length ranging from about 500 nm to about 2000 nm.
The method of claim 1, wherein forming the nanowire core comprises using molecular beam epitaxy to deposit Ga, As, and Sb.
The method of claim 1, wherein surrounding the nanowire core with the first shell comprises using molecular beam epitaxy to deposit Ga, As, Sb in presence of nitrogen plasma.
The method of claim 1, wherein surrounding the nanowire core with the first shell comprises depositing the Ga, As, Sb, and N at a thickness ranging from about 20 nm to 130 nm.
The method claim 1, wherein forming the nanowire core is carried out at a temperature of 620° C.
The method claim 1, wherein surrounding the nanow-ire core with the first shell is carried out at a temperature of 540° C.
The method of claim 1, wherein the surrounding the nanowire core with the first shell comprises lattice-matching between the nanowire core and the first shell. 17 18
Layer stacks claimed or described, ordered top of device to substrate.
GaAsSb/GaAsSbN core-shell nanowire
GaAsSb/GaAsSbN/GaAlAs core-shell-shell nanowire
Materials described outside the worked examples.
GaAs(1−y)Sby nanowire core
GaAs(1-y)Sb(y)
GaAs(1−x)SbxN first shell
GaAs(1-x)Sb(x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A illustrates a scanning electron microscope (SEM) image of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanow- ires under no nitrogen plasma pressure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average emission maximum of core-shell nanowires | 1.4–1.7 µm | GaAs(1-y)Sb(y) |
room temperature photoluminescence quantum yield | ≥ 10 % |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,221,719 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A illustrates a scanning electron microscope (SEM) image of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanow- ires under no nitrogen plasma pressure.
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 5 is a 4K µ-PL spectrum variation for the nitride- containing NWs prepared at different V/III BEP ratios.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 7B.
FIG. 8B.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing a core-shell nanowire, the method comprising: forming a nanowire core by depositing first precursor sources on a growth substrate; and surrounding the nanowire core with a first shell by depos-iting the first precursor sources on the nanowire core in presence of nitrogen (N) plasma; wherein the core-shell nanowire is grown vertically rela-tive to the growth substrate; and wherein the first precursor sources are gallium (Ga), arsenic (As), and antimony (Sb).
The method of claim 1, further comprising; surround-ing the first shell with a second shell by depositing second precursor sources on the first shell, wherein the second precursor sources for the second shell are gallium (Ga), aluminum (Al), and arsenic (As).
The method of claim 1, wherein the forming the nanowire core comprises depositing Ga, then additionally depositing As and Sb while continuing to deposit Ga.
The method of claim 1, wherein the growth substrate is p-type silicon.
The method of claim 1, wherein the core-shell nanowire is grown vertically to a length ranging from about 500 nm to about 2000 nm.
The method of claim 1, wherein forming the nanowire core comprises using molecular beam epitaxy to deposit Ga, As, and Sb.
The method of claim 1, wherein surrounding the nanowire core with the first shell comprises using molecular beam epitaxy to deposit Ga, As, Sb in presence of nitrogen plasma.
The method of claim 1, wherein surrounding the nanowire core with the first shell comprises depositing the Ga, As, Sb, and N at a thickness ranging from about 20 nm to 130 nm.
The method claim 1, wherein forming the nanowire core is carried out at a temperature of 620° C.
The method claim 1, wherein surrounding the nanow-ire core with the first shell is carried out at a temperature of 540° C.
The method of claim 1, wherein the surrounding the nanowire core with the first shell comprises lattice-matching between the nanowire core and the first shell. 17 18
Layer stacks claimed or described, ordered top of device to substrate.
GaAsSb/GaAsSbN core-shell nanowire
GaAsSb/GaAsSbN/GaAlAs core-shell-shell nanowire
Materials described outside the worked examples.
GaAs(1−y)Sby nanowire core
GaAs(1-y)Sb(y)
GaAs(1−x)SbxN first shell
GaAs(1-x)Sb(x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A illustrates a scanning electron microscope (SEM) image of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanow- ires under no nitrogen plasma pressure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average emission maximum of core-shell nanowires | 1.4–1.7 µm | GaAs(1-y)Sb(y) |
room temperature photoluminescence quantum yield | ≥ 10 % |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,221,719 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A illustrates a scanning electron microscope (SEM) image of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanow- ires under no nitrogen plasma pressure.
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 5 is a 4K µ-PL spectrum variation for the nitride- containing NWs prepared at different V/III BEP ratios.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 7B.
FIG. 8B.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing a core-shell nanowire, the method comprising: forming a nanowire core by depositing first precursor sources on a growth substrate; and surrounding the nanowire core with a first shell by depos-iting the first precursor sources on the nanowire core in presence of nitrogen (N) plasma; wherein the core-shell nanowire is grown vertically rela-tive to the growth substrate; and wherein the first precursor sources are gallium (Ga), arsenic (As), and antimony (Sb).
The method of claim 1, further comprising; surround-ing the first shell with a second shell by depositing second precursor sources on the first shell, wherein the second precursor sources for the second shell are gallium (Ga), aluminum (Al), and arsenic (As).
The method of claim 1, wherein the forming the nanowire core comprises depositing Ga, then additionally depositing As and Sb while continuing to deposit Ga.
The method of claim 1, wherein the growth substrate is p-type silicon.
The method of claim 1, wherein the core-shell nanowire is grown vertically to a length ranging from about 500 nm to about 2000 nm.
The method of claim 1, wherein forming the nanowire core comprises using molecular beam epitaxy to deposit Ga, As, and Sb.
The method of claim 1, wherein surrounding the nanowire core with the first shell comprises using molecular beam epitaxy to deposit Ga, As, Sb in presence of nitrogen plasma.
The method of claim 1, wherein surrounding the nanowire core with the first shell comprises depositing the Ga, As, Sb, and N at a thickness ranging from about 20 nm to 130 nm.
The method claim 1, wherein forming the nanowire core is carried out at a temperature of 620° C.
The method claim 1, wherein surrounding the nanow-ire core with the first shell is carried out at a temperature of 540° C.
The method of claim 1, wherein the surrounding the nanowire core with the first shell comprises lattice-matching between the nanowire core and the first shell. 17 18
Layer stacks claimed or described, ordered top of device to substrate.
GaAsSb/GaAsSbN core-shell nanowire
GaAsSb/GaAsSbN/GaAlAs core-shell-shell nanowire
Materials described outside the worked examples.
GaAs(1−y)Sby nanowire core
GaAs(1-y)Sb(y)
GaAs(1−x)SbxN first shell
GaAs(1-x)Sb(x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A illustrates a scanning electron microscope (SEM) image of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanow- ires under no nitrogen plasma pressure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average emission maximum of core-shell nanowires | 1.4–1.7 µm | GaAs(1-y)Sb(y) |
room temperature photoluminescence quantum yield | ≥ 10 % |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,221,719 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A illustrates a scanning electron microscope (SEM) image of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanow- ires under no nitrogen plasma pressure.
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 5 is a 4K µ-PL spectrum variation for the nitride- containing NWs prepared at different V/III BEP ratios.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 7B.
FIG. 8B.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of synthesizing a core-shell nanowire, the method comprising: forming a nanowire core by depositing first precursor sources on a growth substrate; and surrounding the nanowire core with a first shell by depos-iting the first precursor sources on the nanowire core in presence of nitrogen (N) plasma; wherein the core-shell nanowire is grown vertically rela-tive to the growth substrate; and wherein the first precursor sources are gallium (Ga), arsenic (As), and antimony (Sb).
The method of claim 1, further comprising; surround-ing the first shell with a second shell by depositing second precursor sources on the first shell, wherein the second precursor sources for the second shell are gallium (Ga), aluminum (Al), and arsenic (As).
The method of claim 1, wherein the forming the nanowire core comprises depositing Ga, then additionally depositing As and Sb while continuing to deposit Ga.
The method of claim 1, wherein the growth substrate is p-type silicon.
The method of claim 1, wherein the core-shell nanowire is grown vertically to a length ranging from about 500 nm to about 2000 nm.
The method of claim 1, wherein forming the nanowire core comprises using molecular beam epitaxy to deposit Ga, As, and Sb.
The method of claim 1, wherein surrounding the nanowire core with the first shell comprises using molecular beam epitaxy to deposit Ga, As, Sb in presence of nitrogen plasma.
The method of claim 1, wherein surrounding the nanowire core with the first shell comprises depositing the Ga, As, Sb, and N at a thickness ranging from about 20 nm to 130 nm.
The method claim 1, wherein forming the nanowire core is carried out at a temperature of 620° C.
The method claim 1, wherein surrounding the nanow-ire core with the first shell is carried out at a temperature of 540° C.
The method of claim 1, wherein the surrounding the nanowire core with the first shell comprises lattice-matching between the nanowire core and the first shell. 17 18
Layer stacks claimed or described, ordered top of device to substrate.
GaAsSb/GaAsSbN core-shell nanowire
GaAsSb/GaAsSbN/GaAlAs core-shell-shell nanowire
Materials described outside the worked examples.
GaAs(1−y)Sby nanowire core
GaAs(1-y)Sb(y)
GaAs(1−x)SbxN first shell
GaAs(1-x)Sb(x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A illustrates a scanning electron microscope (SEM) image of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanow- ires under no nitrogen plasma pressure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average emission maximum of core-shell nanowires | 1.4–1.7 µm | GaAs(1-y)Sb(y) |
room temperature photoluminescence quantum yield | ≥ 10 % |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
Ga(1−m)Al(m)As second shell
Ga(1-m)Al(m)As
p-type silicon substrate
Si
GaAs0.95Sb0.05 core
GaAs0.95Sb0.05
GaAs0.7Sb0.3N first shell
GaAs0.7Sb0.3N
Ga0.9Al0.1As second shell
Ga0.9Al0.1As
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 5 is a 4K µ-PL spectrum variation for the nitride- containing NWs prepared at different V/III BEP ratios.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 7B.
FIG. 8B.
Thickness | 1–1000 nm | — |
Thickness | 1–500 nm | — |
Thickness | 1–100 nm | — |
Thickness | 50–120 nm | — |
Thickness | 60–110 nm | — |
Thickness | 70–90 nm | — |
Thickness | 30–90 nm | — |
Thickness | 50–80 nm | — |
Thickness | 10–30 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–200 nm | — |
Thickness | 150–300 nm | — |
Thickness | 150–250 nm | — |
Thickness | 1–5 µm | — |
Thickness | 1–10 µm | — |
Thickness | 1–20 µm | — |
Thickness | 2–5 µm | — |
Thickness | 2–10 µm | — |
Thickness | 2–20 µm | — |
Thickness | 5–10 µm | — |
Thickness | 5–20 µm | — |
Thickness | 250–300 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 90 nm | — |
Thickness | ≤ 110 nm | — |
Thickness | ≤ 120 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 400 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 90 nm | — |
Thickness | ≥ 110 nm | — |
Thickness | ≥ 120 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 70 nm | — |
Thickness | ≥ 80 nm | — |
Thickness | ≥ 130 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 25 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 10 µm | — |
Thickness | ≥ 15 µm | — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 25 µm | — |
Thickness | ≥ 30 µm | — |
Thickness | ≥ 40 µm | — |
Thickness | ≥ 50 µm | — |
Thickness | 500–2000 nm | — |
Thickness | 50–110 nm | — |
Thickness | 20–130 nm | — |
Thickness | 5–40 nm | — |
Ga(1−m)Al(m)As second shell
Ga(1-m)Al(m)As
p-type silicon substrate
Si
GaAs0.95Sb0.05 core
GaAs0.95Sb0.05
GaAs0.7Sb0.3N first shell
GaAs0.7Sb0.3N
Ga0.9Al0.1As second shell
Ga0.9Al0.1As
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 5 is a 4K µ-PL spectrum variation for the nitride- containing NWs prepared at different V/III BEP ratios.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 7B.
FIG. 8B.
Thickness | 1–1000 nm | — |
Thickness | 1–500 nm | — |
Thickness | 1–100 nm | — |
Thickness | 50–120 nm | — |
Thickness | 60–110 nm | — |
Thickness | 70–90 nm | — |
Thickness | 30–90 nm | — |
Thickness | 50–80 nm | — |
Thickness | 10–30 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–200 nm | — |
Thickness | 150–300 nm | — |
Thickness | 150–250 nm | — |
Thickness | 1–5 µm | — |
Thickness | 1–10 µm | — |
Thickness | 1–20 µm | — |
Thickness | 2–5 µm | — |
Thickness | 2–10 µm | — |
Thickness | 2–20 µm | — |
Thickness | 5–10 µm | — |
Thickness | 5–20 µm | — |
Thickness | 250–300 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 90 nm | — |
Thickness | ≤ 110 nm | — |
Thickness | ≤ 120 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 400 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 90 nm | — |
Thickness | ≥ 110 nm | — |
Thickness | ≥ 120 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 70 nm | — |
Thickness | ≥ 80 nm | — |
Thickness | ≥ 130 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 25 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 10 µm | — |
Thickness | ≥ 15 µm | — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 25 µm | — |
Thickness | ≥ 30 µm | — |
Thickness | ≥ 40 µm | — |
Thickness | ≥ 50 µm | — |
Thickness | 500–2000 nm | — |
Thickness | 50–110 nm | — |
Thickness | 20–130 nm | — |
Thickness | 5–40 nm | — |
Ga(1−m)Al(m)As second shell
Ga(1-m)Al(m)As
p-type silicon substrate
Si
GaAs0.95Sb0.05 core
GaAs0.95Sb0.05
GaAs0.7Sb0.3N first shell
GaAs0.7Sb0.3N
Ga0.9Al0.1As second shell
Ga0.9Al0.1As
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 5 is a 4K µ-PL spectrum variation for the nitride- containing NWs prepared at different V/III BEP ratios.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 7B.
FIG. 8B.
Thickness | 1–1000 nm | — |
Thickness | 1–500 nm | — |
Thickness | 1–100 nm | — |
Thickness | 50–120 nm | — |
Thickness | 60–110 nm | — |
Thickness | 70–90 nm | — |
Thickness | 30–90 nm | — |
Thickness | 50–80 nm | — |
Thickness | 10–30 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–200 nm | — |
Thickness | 150–300 nm | — |
Thickness | 150–250 nm | — |
Thickness | 1–5 µm | — |
Thickness | 1–10 µm | — |
Thickness | 1–20 µm | — |
Thickness | 2–5 µm | — |
Thickness | 2–10 µm | — |
Thickness | 2–20 µm | — |
Thickness | 5–10 µm | — |
Thickness | 5–20 µm | — |
Thickness | 250–300 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 90 nm | — |
Thickness | ≤ 110 nm | — |
Thickness | ≤ 120 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 400 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 90 nm | — |
Thickness | ≥ 110 nm | — |
Thickness | ≥ 120 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 70 nm | — |
Thickness | ≥ 80 nm | — |
Thickness | ≥ 130 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 25 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 10 µm | — |
Thickness | ≥ 15 µm | — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 25 µm | — |
Thickness | ≥ 30 µm | — |
Thickness | ≥ 40 µm | — |
Thickness | ≥ 50 µm | — |
Thickness | 500–2000 nm | — |
Thickness | 50–110 nm | — |
Thickness | 20–130 nm | — |
Thickness | 5–40 nm | — |
Ga(1−m)Al(m)As second shell
Ga(1-m)Al(m)As
p-type silicon substrate
Si
GaAs0.95Sb0.05 core
GaAs0.95Sb0.05
GaAs0.7Sb0.3N first shell
GaAs0.7Sb0.3N
Ga0.9Al0.1As second shell
Ga0.9Al0.1As
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 2B is a photoluminescence (PL) spectra of intensity (a.u.) as a function of energy (eV) for GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires prepared …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 3A illustrates SEM images of GaAs0.95Sb0.05/GaAs0.7Sb0.3N core-shell nanowires with variation in shell thickness (increasing from left to right) for NWs …
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 4A illustrates SEM images of core-shell nanowires prepared with different V/III BEP ratio (from left to right: 20, 15, 12, 10 & 8).
FIG. 5 is a 4K µ-PL spectrum variation for the nitride- containing NWs prepared at different V/III BEP ratios.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 6D is a 4K PL spectra for non-nitride and nitride NWs grown with V/III ratio of 10; the insert is a room temperature PL spectrum for the nitride nanowire.
FIG. 7B.
FIG. 8B.
Thickness | 1–1000 nm | — |
Thickness | 1–500 nm | — |
Thickness | 1–100 nm | — |
Thickness | 50–120 nm | — |
Thickness | 60–110 nm | — |
Thickness | 70–90 nm | — |
Thickness | 30–90 nm | — |
Thickness | 50–80 nm | — |
Thickness | 10–30 nm | — |
Thickness | 100–300 nm | — |
Thickness | 100–200 nm | — |
Thickness | 150–300 nm | — |
Thickness | 150–250 nm | — |
Thickness | 1–5 µm | — |
Thickness | 1–10 µm | — |
Thickness | 1–20 µm | — |
Thickness | 2–5 µm | — |
Thickness | 2–10 µm | — |
Thickness | 2–20 µm | — |
Thickness | 5–10 µm | — |
Thickness | 5–20 µm | — |
Thickness | 250–300 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 90 nm | — |
Thickness | ≤ 110 nm | — |
Thickness | ≤ 120 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 400 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 90 nm | — |
Thickness | ≥ 110 nm | — |
Thickness | ≥ 120 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 70 nm | — |
Thickness | ≥ 80 nm | — |
Thickness | ≥ 130 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 25 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 10 µm | — |
Thickness | ≥ 15 µm | — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 25 µm | — |
Thickness | ≥ 30 µm | — |
Thickness | ≥ 40 µm | — |
Thickness | ≥ 50 µm | — |
Thickness | 500–2000 nm | — |
Thickness | 50–110 nm | — |
Thickness | 20–130 nm | — |
Thickness | 5–40 nm | — |
