Patent
Atlas literature
Patent
US 11,961,934 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing the preparation process of a visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction according …
FIG. 2B shows an atomic force microscope image of the MoS₂ heterostructure modified with TiO2.
FIG. 3a.
FIG. 4 shows an X-ray photoelectron spectroscopy of the TiO₂/MoS₂ heterojunction, where a-d show core-level high resolution XPS spectra of Mo 3d, S 2p, Ti 2p …
FIG. 5D shows a 3D-model and cross-section diagram of the photodetector based on MoS₂ modified with TiO₂ nanosheets.
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 8B shows an energy band diagram of the TiO₂/MoS₂ heterojunction under visible light illumination.
FIG. 50 4(D), the peak at 531.50 eV derives from the oxygen vacancies in TiO2. The optical image of the field-effect transistor based on MoS₂ is as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A visible light detector with photoresponse based on a TiO₂/MoS₂ heterojunction, comprising a MoS₂ channel, a TiO₂ modification layer, a SiO₂ dielectric layer, Au source/drain electrodes and a Si gate electrode, the TiO₂ modifica-tion layer being modified on the surface of the MoS₂ channel, the TiO₂ modification layer being obtained from e-beam evaporation of a certain thickness of metallic Ti film on the surface of the MoS₂ channel and natural oxidation of the metallic Ti film, and the MoS₂ channel being a few layers of MoS₂ flakes with a crystallinity.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein the MoS₂ flakes are in a hexagonal phase with a single-crystal structure, the few layers of the MoS₂ flakes number-ing 3-5 layers, and an overall thickness is 2-2.5 nm.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein the TiO₂ modification layer is a naturally oxidized TiO₂ layer having a thickness of 1-2 nm.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein at a zero-gate voltage and under illumination of a white-light LED, the detector can reach a photoresponsivity of 1099 A/W and a specific detectivity of 1.67×1013 Jones. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
A visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction. The detector is based on a back-gated field-effect transistor based on MoS2, including a MoS₂ channel (3-layer hexagonal-phase single-crystal MoS₂ flakes, 2-2.5 nm thick), a naturally oxidized TiO₂ modification layer (1-2 nm thick, crystalline or amorphous), a SiO₂ dielectric layer, Au source/drain electrodes, and a Si gate electrode. At zero-gate voltage under white-light LED illumination, the detector achieves a photoresponsivity of 1099 A/W and a specific detectivity of 1.67×10¹³ Jones.
5 materials4 process steps
Method of preparing the visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction. S1: Few-layer MoS₂ flakes prepared by micromechanical exfoliation (repeated tearing/sticking of bulk MoS₂ with adhesive tape) and transferred onto a SiO₂/Si wafer, then heated at 100°C for 2 min. S2: Site-specific transfer of 50 nm Au electrodes onto MoS₂ flakes to form source/drain; device annealed at 200°C in Ar/H₂ at 10 Pa for 1 h. S3: E-beam evaporation of 2 nm metallic Ti film on the channel surface at a deposition rate of 0.2 Å/s. S4: Natural oxidation in air converts Ti to TiO2, forming the TiO₂/MoS₂ heterojunction photodetector.
Layer stacks claimed or described, ordered top of device to substrate.
TiO₂/MoS₂ heterojunction visible light detector (back-gated FET)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2B shows an atomic force microscope image of the MoS₂ heterostructure modified with TiO2.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Photoresponsivity | 1099 A/W | MoS₂ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 6
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,961,934 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing the preparation process of a visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction according …
FIG. 2B shows an atomic force microscope image of the MoS₂ heterostructure modified with TiO2.
FIG. 3a.
FIG. 4 shows an X-ray photoelectron spectroscopy of the TiO₂/MoS₂ heterojunction, where a-d show core-level high resolution XPS spectra of Mo 3d, S 2p, Ti 2p …
FIG. 5D shows a 3D-model and cross-section diagram of the photodetector based on MoS₂ modified with TiO₂ nanosheets.
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 8B shows an energy band diagram of the TiO₂/MoS₂ heterojunction under visible light illumination.
FIG. 50 4(D), the peak at 531.50 eV derives from the oxygen vacancies in TiO2. The optical image of the field-effect transistor based on MoS₂ is as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A visible light detector with photoresponse based on a TiO₂/MoS₂ heterojunction, comprising a MoS₂ channel, a TiO₂ modification layer, a SiO₂ dielectric layer, Au source/drain electrodes and a Si gate electrode, the TiO₂ modifica-tion layer being modified on the surface of the MoS₂ channel, the TiO₂ modification layer being obtained from e-beam evaporation of a certain thickness of metallic Ti film on the surface of the MoS₂ channel and natural oxidation of the metallic Ti film, and the MoS₂ channel being a few layers of MoS₂ flakes with a crystallinity.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein the MoS₂ flakes are in a hexagonal phase with a single-crystal structure, the few layers of the MoS₂ flakes number-ing 3-5 layers, and an overall thickness is 2-2.5 nm.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein the TiO₂ modification layer is a naturally oxidized TiO₂ layer having a thickness of 1-2 nm.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein at a zero-gate voltage and under illumination of a white-light LED, the detector can reach a photoresponsivity of 1099 A/W and a specific detectivity of 1.67×1013 Jones. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
A visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction. The detector is based on a back-gated field-effect transistor based on MoS2, including a MoS₂ channel (3-layer hexagonal-phase single-crystal MoS₂ flakes, 2-2.5 nm thick), a naturally oxidized TiO₂ modification layer (1-2 nm thick, crystalline or amorphous), a SiO₂ dielectric layer, Au source/drain electrodes, and a Si gate electrode. At zero-gate voltage under white-light LED illumination, the detector achieves a photoresponsivity of 1099 A/W and a specific detectivity of 1.67×10¹³ Jones.
5 materials4 process steps
Method of preparing the visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction. S1: Few-layer MoS₂ flakes prepared by micromechanical exfoliation (repeated tearing/sticking of bulk MoS₂ with adhesive tape) and transferred onto a SiO₂/Si wafer, then heated at 100°C for 2 min. S2: Site-specific transfer of 50 nm Au electrodes onto MoS₂ flakes to form source/drain; device annealed at 200°C in Ar/H₂ at 10 Pa for 1 h. S3: E-beam evaporation of 2 nm metallic Ti film on the channel surface at a deposition rate of 0.2 Å/s. S4: Natural oxidation in air converts Ti to TiO2, forming the TiO₂/MoS₂ heterojunction photodetector.
Layer stacks claimed or described, ordered top of device to substrate.
TiO₂/MoS₂ heterojunction visible light detector (back-gated FET)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2B shows an atomic force microscope image of the MoS₂ heterostructure modified with TiO2.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Photoresponsivity | 1099 A/W | MoS₂ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 6
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,961,934 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing the preparation process of a visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction according …
FIG. 2B shows an atomic force microscope image of the MoS₂ heterostructure modified with TiO2.
FIG. 3a.
FIG. 4 shows an X-ray photoelectron spectroscopy of the TiO₂/MoS₂ heterojunction, where a-d show core-level high resolution XPS spectra of Mo 3d, S 2p, Ti 2p …
FIG. 5D shows a 3D-model and cross-section diagram of the photodetector based on MoS₂ modified with TiO₂ nanosheets.
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 8B shows an energy band diagram of the TiO₂/MoS₂ heterojunction under visible light illumination.
FIG. 50 4(D), the peak at 531.50 eV derives from the oxygen vacancies in TiO2. The optical image of the field-effect transistor based on MoS₂ is as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A visible light detector with photoresponse based on a TiO₂/MoS₂ heterojunction, comprising a MoS₂ channel, a TiO₂ modification layer, a SiO₂ dielectric layer, Au source/drain electrodes and a Si gate electrode, the TiO₂ modifica-tion layer being modified on the surface of the MoS₂ channel, the TiO₂ modification layer being obtained from e-beam evaporation of a certain thickness of metallic Ti film on the surface of the MoS₂ channel and natural oxidation of the metallic Ti film, and the MoS₂ channel being a few layers of MoS₂ flakes with a crystallinity.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein the MoS₂ flakes are in a hexagonal phase with a single-crystal structure, the few layers of the MoS₂ flakes number-ing 3-5 layers, and an overall thickness is 2-2.5 nm.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein the TiO₂ modification layer is a naturally oxidized TiO₂ layer having a thickness of 1-2 nm.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein at a zero-gate voltage and under illumination of a white-light LED, the detector can reach a photoresponsivity of 1099 A/W and a specific detectivity of 1.67×1013 Jones. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
A visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction. The detector is based on a back-gated field-effect transistor based on MoS2, including a MoS₂ channel (3-layer hexagonal-phase single-crystal MoS₂ flakes, 2-2.5 nm thick), a naturally oxidized TiO₂ modification layer (1-2 nm thick, crystalline or amorphous), a SiO₂ dielectric layer, Au source/drain electrodes, and a Si gate electrode. At zero-gate voltage under white-light LED illumination, the detector achieves a photoresponsivity of 1099 A/W and a specific detectivity of 1.67×10¹³ Jones.
5 materials4 process steps
Method of preparing the visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction. S1: Few-layer MoS₂ flakes prepared by micromechanical exfoliation (repeated tearing/sticking of bulk MoS₂ with adhesive tape) and transferred onto a SiO₂/Si wafer, then heated at 100°C for 2 min. S2: Site-specific transfer of 50 nm Au electrodes onto MoS₂ flakes to form source/drain; device annealed at 200°C in Ar/H₂ at 10 Pa for 1 h. S3: E-beam evaporation of 2 nm metallic Ti film on the channel surface at a deposition rate of 0.2 Å/s. S4: Natural oxidation in air converts Ti to TiO2, forming the TiO₂/MoS₂ heterojunction photodetector.
Layer stacks claimed or described, ordered top of device to substrate.
TiO₂/MoS₂ heterojunction visible light detector (back-gated FET)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2B shows an atomic force microscope image of the MoS₂ heterostructure modified with TiO2.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Photoresponsivity | 1099 A/W | MoS₂ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 6
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,961,934 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing the preparation process of a visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction according …
FIG. 2B shows an atomic force microscope image of the MoS₂ heterostructure modified with TiO2.
FIG. 3a.
FIG. 4 shows an X-ray photoelectron spectroscopy of the TiO₂/MoS₂ heterojunction, where a-d show core-level high resolution XPS spectra of Mo 3d, S 2p, Ti 2p …
FIG. 5D shows a 3D-model and cross-section diagram of the photodetector based on MoS₂ modified with TiO₂ nanosheets.
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 8B shows an energy band diagram of the TiO₂/MoS₂ heterojunction under visible light illumination.
FIG. 50 4(D), the peak at 531.50 eV derives from the oxygen vacancies in TiO2. The optical image of the field-effect transistor based on MoS₂ is as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A visible light detector with photoresponse based on a TiO₂/MoS₂ heterojunction, comprising a MoS₂ channel, a TiO₂ modification layer, a SiO₂ dielectric layer, Au source/drain electrodes and a Si gate electrode, the TiO₂ modifica-tion layer being modified on the surface of the MoS₂ channel, the TiO₂ modification layer being obtained from e-beam evaporation of a certain thickness of metallic Ti film on the surface of the MoS₂ channel and natural oxidation of the metallic Ti film, and the MoS₂ channel being a few layers of MoS₂ flakes with a crystallinity.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein the MoS₂ flakes are in a hexagonal phase with a single-crystal structure, the few layers of the MoS₂ flakes number-ing 3-5 layers, and an overall thickness is 2-2.5 nm.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein the TiO₂ modification layer is a naturally oxidized TiO₂ layer having a thickness of 1-2 nm.
The visible light detector with photoresponse based on the TiO₂/MoS₂ heterojunction according to claim 1, wherein at a zero-gate voltage and under illumination of a white-light LED, the detector can reach a photoresponsivity of 1099 A/W and a specific detectivity of 1.67×1013 Jones. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
A visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction. The detector is based on a back-gated field-effect transistor based on MoS2, including a MoS₂ channel (3-layer hexagonal-phase single-crystal MoS₂ flakes, 2-2.5 nm thick), a naturally oxidized TiO₂ modification layer (1-2 nm thick, crystalline or amorphous), a SiO₂ dielectric layer, Au source/drain electrodes, and a Si gate electrode. At zero-gate voltage under white-light LED illumination, the detector achieves a photoresponsivity of 1099 A/W and a specific detectivity of 1.67×10¹³ Jones.
5 materials4 process steps
Method of preparing the visible light detector with high-photoresponse based on TiO₂/MoS₂ heterojunction. S1: Few-layer MoS₂ flakes prepared by micromechanical exfoliation (repeated tearing/sticking of bulk MoS₂ with adhesive tape) and transferred onto a SiO₂/Si wafer, then heated at 100°C for 2 min. S2: Site-specific transfer of 50 nm Au electrodes onto MoS₂ flakes to form source/drain; device annealed at 200°C in Ar/H₂ at 10 Pa for 1 h. S3: E-beam evaporation of 2 nm metallic Ti film on the channel surface at a deposition rate of 0.2 Å/s. S4: Natural oxidation in air converts Ti to TiO2, forming the TiO₂/MoS₂ heterojunction photodetector.
Layer stacks claimed or described, ordered top of device to substrate.
TiO₂/MoS₂ heterojunction visible light detector (back-gated FET)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2B shows an atomic force microscope image of the MoS₂ heterostructure modified with TiO2.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Photoresponsivity | 1099 A/W | MoS₂ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 6
Related documents with shared materials, methods, properties, or citations.
FIG. 4 shows an X-ray photoelectron spectroscopy of the TiO₂/MoS₂ heterojunction, where a-d show core-level high resolution XPS spectra of Mo 3d, S 2p, Ti 2p …
FIG. 5D shows a 3D-model and cross-section diagram of the photodetector based on MoS₂ modified with TiO₂ nanosheets.
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 50 4(D), the peak at 531.50 eV derives from the oxygen vacancies in TiO2. The optical image of the field-effect transistor based on MoS₂ is as shown in
Specific Detectivity | 16700000000000 Jones | MoS₂TiO₂ |
Layer Count | 3-5 layers | MoS₂ |
Thickness | 2–2.5 nm | MoS₂ |
Thickness | 1–2 nm | TiO₂ |
Voltage | 0–60 V | — |
Thickness | 2–2.5 nm | — |
Thickness | 1–2 nm | — |
Thickness | 2–3 nm | — |
Thickness | ≥ 10 µm | — |
FIG. 4 shows an X-ray photoelectron spectroscopy of the TiO₂/MoS₂ heterojunction, where a-d show core-level high resolution XPS spectra of Mo 3d, S 2p, Ti 2p …
FIG. 5D shows a 3D-model and cross-section diagram of the photodetector based on MoS₂ modified with TiO₂ nanosheets.
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 50 4(D), the peak at 531.50 eV derives from the oxygen vacancies in TiO2. The optical image of the field-effect transistor based on MoS₂ is as shown in
Specific Detectivity | 16700000000000 Jones | MoS₂TiO₂ |
Layer Count | 3-5 layers | MoS₂ |
Thickness | 2–2.5 nm | MoS₂ |
Thickness | 1–2 nm | TiO₂ |
Voltage | 0–60 V | — |
Thickness | 2–2.5 nm | — |
Thickness | 1–2 nm | — |
Thickness | 2–3 nm | — |
Thickness | ≥ 10 µm | — |
FIG. 4 shows an X-ray photoelectron spectroscopy of the TiO₂/MoS₂ heterojunction, where a-d show core-level high resolution XPS spectra of Mo 3d, S 2p, Ti 2p …
FIG. 5D shows a 3D-model and cross-section diagram of the photodetector based on MoS₂ modified with TiO₂ nanosheets.
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 50 4(D), the peak at 531.50 eV derives from the oxygen vacancies in TiO2. The optical image of the field-effect transistor based on MoS₂ is as shown in
Specific Detectivity | 16700000000000 Jones | MoS₂TiO₂ |
Layer Count | 3-5 layers | MoS₂ |
Thickness | 2–2.5 nm | MoS₂ |
Thickness | 1–2 nm | TiO₂ |
Voltage | 0–60 V | — |
Thickness | 2–2.5 nm | — |
Thickness | 1–2 nm | — |
Thickness | 2–3 nm | — |
Thickness | ≥ 10 µm | — |
FIG. 4 shows an X-ray photoelectron spectroscopy of the TiO₂/MoS₂ heterojunction, where a-d show core-level high resolution XPS spectra of Mo 3d, S 2p, Ti 2p …
FIG. 5D shows a 3D-model and cross-section diagram of the photodetector based on MoS₂ modified with TiO₂ nanosheets.
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 6A shows transfer curves of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively in dark and under differ- ent illumination power densities at a …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 7B shows the dependence of the specific detectivi- ties of photodetectors based on MoS₂ and TiO₂/MoS₂ respectively on the power density at different gate …
FIG. 50 4(D), the peak at 531.50 eV derives from the oxygen vacancies in TiO2. The optical image of the field-effect transistor based on MoS₂ is as shown in
Specific Detectivity | 16700000000000 Jones | MoS₂TiO₂ |
Layer Count | 3-5 layers | MoS₂ |
Thickness | 2–2.5 nm | MoS₂ |
Thickness | 1–2 nm | TiO₂ |
Voltage | 0–60 V | — |
Thickness | 2–2.5 nm | — |
Thickness | 1–2 nm | — |
Thickness | 2–3 nm | — |
Thickness | ≥ 10 µm | — |
