Patent
US 9,340,430Title: CRYSTALLINE GRAPHENE AN D M ETHOD OF MAKING CRYSTALLINE GRAPHENE
Narayanan S. Hosmane, Amartya Chakrabarti
Board of Trustees of Northern Illinois University·14 March 2013·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,340,430Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1. Dry ice chamber with holes at both ends. [16]
Figure 2. Quartz-Glass Reaction Chamber for Ignition of Mg Spirals. [17]
Figure 3. Isolation of Graphene Using AAO Template. [18]
Figure 4. 6 33 nm Raman Spectrum of the carbon species exhibiting the G'- band at 2645 cm "', G-band at 1570 cm " and a D -band at 1325 cm ". Inset: the expanded view of the G'-band showing the splitting pattern of the peak. [19]
Figure 5. TEM images of few-layer graphene. (a) Graphenes with an average length of 50-100 nm. (b) Crystalline graphenes with an average length of 200nm. -3- WO 2013/036272 PCT/US₂ 01 1/063548 [20]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 7. XRD pattern of the carbon species. [22]
Figure 8. EDX spectra of the graphene nanosheets, C 90.32 (A t m. W t. %); Mg 2.38 (Atm. Wt. %); O 7.30 (Atm. Wt. %).
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A method of producing isolated graphene, comprising isolating graphene from a composition comprising graphene and magnesium, wherein the isolated graphene contains less than 10% by weight of non-graphene material.
The method of claim 2, further comprising forming the composition by a process comprising burning magnesium metal in an atmosphere comprising carbon dioxide.
The method of claim 2, wherein the composition is formed in contact with solid carbon dioxide.
The method of claim 2, further comprising forming the composition by a process comprising reducing carbon dioxide with magnesium metal.
The method of claim 2, wherein the composition further comprises at least one additional element.
The method of claim 2, wherein the isolating comprises removing from the graphene at least one of magnesium oxide, magnesium metal and carbon.
The method of claim 2, wherein the graphene is few-layer g raphene.
The method of claim 2, wherein the isolated graphene has an average particle size of at most 500 nm.
(Previously presented-withdrawn) A method of forming a graphene ink, comprising: preparing isolated graphene by the method of claim 2, and dispersing or suspending the isolated graphene into a liquid. withdrawn
(Previously presented-withdrawn) A method of preparing an electronic device, comprising: preparing isolated graphene by the method of claim 2, and preparing the electronic device from the isolated graphene. withdrawn
(Previously presented-withdrawn) A method of preparing an electronic device, comprising: forming isolated graphene by the method of claim 2, dispersing or suspending the isolated graphene into a liquid, to form a graphene ink, and preparing the electronic device from the graphene ink. withdrawn
The method of claim 2, wherein the isolated graphene contains less than 5% by weight of non-graphene material.
The method of claim 2, wherein the isolated graphene has an average particle size of at most 500 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u K a radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 150% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
The method of claim 2, wherein the isolated graphene is few layer g raphene, the isolated graphene has an average particle size of at most 300 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u Ka radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 125% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
The method of claim 2, further comprising forming the composition by a process comprising reducing carbon dioxide with magnesium metal, wherein the isolated graphene is few layer graphene, the isolated graphene has an average particle size of at most 300 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u Ka radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 125% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
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The method of claim 22 claim 2, wherein an X-ray diffraction pattern under Cu K, radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 150% of the full-width at half- maximum intensity of the (100) peak illustrated in Figure 7.
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A method of producing isolated graphene, comprising: reducing carbon dioxide with molten metal, the molten metal comprising magnesium, to form a composition comprising graphene and magnesium oxide, isolating graphene from the composition, to form isolated crystalline graphene, wherein the isolated crystalline graphene has an average particle size of at most 500 nm, and the isolated crystalline graphere graphene contains less than 5% by weight of non-graphene material.
A method of producing isolated graphene, comprising isolating graphene from a composition comprising graphene, magnesium and at least one additional element, wherein the at least one additional element comprises zinc.
Materials described outside the worked examples.
crystalline graphene
C
magnesium
Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 4. 6 33 nm Raman Spectrum of the carbon species exhibiting the G'- band at 2645 cm "', G-band at 1570 cm " and a D -band at 1325 cm ". Inset: the expanded view of the G'-band showing the splitting pattern of the peak. [19]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
XRD (100) peak FWHM of isolated graphene relative to Figure 7 reference | — | C |
Average particle size of isolated graphene (claimed upper bound) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,340,430Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1. Dry ice chamber with holes at both ends. [16]
Figure 2. Quartz-Glass Reaction Chamber for Ignition of Mg Spirals. [17]
Figure 3. Isolation of Graphene Using AAO Template. [18]
Figure 4. 6 33 nm Raman Spectrum of the carbon species exhibiting the G'- band at 2645 cm "', G-band at 1570 cm " and a D -band at 1325 cm ". Inset: the expanded view of the G'-band showing the splitting pattern of the peak. [19]
Figure 5. TEM images of few-layer graphene. (a) Graphenes with an average length of 50-100 nm. (b) Crystalline graphenes with an average length of 200nm. -3- WO 2013/036272 PCT/US₂ 01 1/063548 [20]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 7. XRD pattern of the carbon species. [22]
Figure 8. EDX spectra of the graphene nanosheets, C 90.32 (A t m. W t. %); Mg 2.38 (Atm. Wt. %); O 7.30 (Atm. Wt. %).
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A method of producing isolated graphene, comprising isolating graphene from a composition comprising graphene and magnesium, wherein the isolated graphene contains less than 10% by weight of non-graphene material.
The method of claim 2, further comprising forming the composition by a process comprising burning magnesium metal in an atmosphere comprising carbon dioxide.
The method of claim 2, wherein the composition is formed in contact with solid carbon dioxide.
The method of claim 2, further comprising forming the composition by a process comprising reducing carbon dioxide with magnesium metal.
The method of claim 2, wherein the composition further comprises at least one additional element.
The method of claim 2, wherein the isolating comprises removing from the graphene at least one of magnesium oxide, magnesium metal and carbon.
The method of claim 2, wherein the graphene is few-layer g raphene.
The method of claim 2, wherein the isolated graphene has an average particle size of at most 500 nm.
(Previously presented-withdrawn) A method of forming a graphene ink, comprising: preparing isolated graphene by the method of claim 2, and dispersing or suspending the isolated graphene into a liquid. withdrawn
(Previously presented-withdrawn) A method of preparing an electronic device, comprising: preparing isolated graphene by the method of claim 2, and preparing the electronic device from the isolated graphene. withdrawn
(Previously presented-withdrawn) A method of preparing an electronic device, comprising: forming isolated graphene by the method of claim 2, dispersing or suspending the isolated graphene into a liquid, to form a graphene ink, and preparing the electronic device from the graphene ink. withdrawn
The method of claim 2, wherein the isolated graphene contains less than 5% by weight of non-graphene material.
The method of claim 2, wherein the isolated graphene has an average particle size of at most 500 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u K a radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 150% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
The method of claim 2, wherein the isolated graphene is few layer g raphene, the isolated graphene has an average particle size of at most 300 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u Ka radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 125% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
The method of claim 2, further comprising forming the composition by a process comprising reducing carbon dioxide with magnesium metal, wherein the isolated graphene is few layer graphene, the isolated graphene has an average particle size of at most 300 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u Ka radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 125% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
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The method of claim 22 claim 2, wherein an X-ray diffraction pattern under Cu K, radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 150% of the full-width at half- maximum intensity of the (100) peak illustrated in Figure 7.
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A method of producing isolated graphene, comprising: reducing carbon dioxide with molten metal, the molten metal comprising magnesium, to form a composition comprising graphene and magnesium oxide, isolating graphene from the composition, to form isolated crystalline graphene, wherein the isolated crystalline graphene has an average particle size of at most 500 nm, and the isolated crystalline graphere graphene contains less than 5% by weight of non-graphene material.
A method of producing isolated graphene, comprising isolating graphene from a composition comprising graphene, magnesium and at least one additional element, wherein the at least one additional element comprises zinc.
Materials described outside the worked examples.
crystalline graphene
C
magnesium
Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 4. 6 33 nm Raman Spectrum of the carbon species exhibiting the G'- band at 2645 cm "', G-band at 1570 cm " and a D -band at 1325 cm ". Inset: the expanded view of the G'-band showing the splitting pattern of the peak. [19]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
XRD (100) peak FWHM of isolated graphene relative to Figure 7 reference | — | C |
Average particle size of isolated graphene (claimed upper bound) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,340,430Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1. Dry ice chamber with holes at both ends. [16]
Figure 2. Quartz-Glass Reaction Chamber for Ignition of Mg Spirals. [17]
Figure 3. Isolation of Graphene Using AAO Template. [18]
Figure 4. 6 33 nm Raman Spectrum of the carbon species exhibiting the G'- band at 2645 cm "', G-band at 1570 cm " and a D -band at 1325 cm ". Inset: the expanded view of the G'-band showing the splitting pattern of the peak. [19]
Figure 5. TEM images of few-layer graphene. (a) Graphenes with an average length of 50-100 nm. (b) Crystalline graphenes with an average length of 200nm. -3- WO 2013/036272 PCT/US₂ 01 1/063548 [20]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 7. XRD pattern of the carbon species. [22]
Figure 8. EDX spectra of the graphene nanosheets, C 90.32 (A t m. W t. %); Mg 2.38 (Atm. Wt. %); O 7.30 (Atm. Wt. %).
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A method of producing isolated graphene, comprising isolating graphene from a composition comprising graphene and magnesium, wherein the isolated graphene contains less than 10% by weight of non-graphene material.
The method of claim 2, further comprising forming the composition by a process comprising burning magnesium metal in an atmosphere comprising carbon dioxide.
The method of claim 2, wherein the composition is formed in contact with solid carbon dioxide.
The method of claim 2, further comprising forming the composition by a process comprising reducing carbon dioxide with magnesium metal.
The method of claim 2, wherein the composition further comprises at least one additional element.
The method of claim 2, wherein the isolating comprises removing from the graphene at least one of magnesium oxide, magnesium metal and carbon.
The method of claim 2, wherein the graphene is few-layer g raphene.
The method of claim 2, wherein the isolated graphene has an average particle size of at most 500 nm.
(Previously presented-withdrawn) A method of forming a graphene ink, comprising: preparing isolated graphene by the method of claim 2, and dispersing or suspending the isolated graphene into a liquid. withdrawn
(Previously presented-withdrawn) A method of preparing an electronic device, comprising: preparing isolated graphene by the method of claim 2, and preparing the electronic device from the isolated graphene. withdrawn
(Previously presented-withdrawn) A method of preparing an electronic device, comprising: forming isolated graphene by the method of claim 2, dispersing or suspending the isolated graphene into a liquid, to form a graphene ink, and preparing the electronic device from the graphene ink. withdrawn
The method of claim 2, wherein the isolated graphene contains less than 5% by weight of non-graphene material.
The method of claim 2, wherein the isolated graphene has an average particle size of at most 500 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u K a radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 150% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
The method of claim 2, wherein the isolated graphene is few layer g raphene, the isolated graphene has an average particle size of at most 300 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u Ka radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 125% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
The method of claim 2, further comprising forming the composition by a process comprising reducing carbon dioxide with magnesium metal, wherein the isolated graphene is few layer graphene, the isolated graphene has an average particle size of at most 300 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u Ka radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 125% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
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The method of claim 22 claim 2, wherein an X-ray diffraction pattern under Cu K, radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 150% of the full-width at half- maximum intensity of the (100) peak illustrated in Figure 7.
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A method of producing isolated graphene, comprising: reducing carbon dioxide with molten metal, the molten metal comprising magnesium, to form a composition comprising graphene and magnesium oxide, isolating graphene from the composition, to form isolated crystalline graphene, wherein the isolated crystalline graphene has an average particle size of at most 500 nm, and the isolated crystalline graphere graphene contains less than 5% by weight of non-graphene material.
A method of producing isolated graphene, comprising isolating graphene from a composition comprising graphene, magnesium and at least one additional element, wherein the at least one additional element comprises zinc.
Materials described outside the worked examples.
crystalline graphene
C
magnesium
Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 4. 6 33 nm Raman Spectrum of the carbon species exhibiting the G'- band at 2645 cm "', G-band at 1570 cm " and a D -band at 1325 cm ". Inset: the expanded view of the G'-band showing the splitting pattern of the peak. [19]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
XRD (100) peak FWHM of isolated graphene relative to Figure 7 reference | — | C |
Average particle size of isolated graphene (claimed upper bound) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,340,430Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1. Dry ice chamber with holes at both ends. [16]
Figure 2. Quartz-Glass Reaction Chamber for Ignition of Mg Spirals. [17]
Figure 3. Isolation of Graphene Using AAO Template. [18]
Figure 4. 6 33 nm Raman Spectrum of the carbon species exhibiting the G'- band at 2645 cm "', G-band at 1570 cm " and a D -band at 1325 cm ". Inset: the expanded view of the G'-band showing the splitting pattern of the peak. [19]
Figure 5. TEM images of few-layer graphene. (a) Graphenes with an average length of 50-100 nm. (b) Crystalline graphenes with an average length of 200nm. -3- WO 2013/036272 PCT/US₂ 01 1/063548 [20]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 7. XRD pattern of the carbon species. [22]
Figure 8. EDX spectra of the graphene nanosheets, C 90.32 (A t m. W t. %); Mg 2.38 (Atm. Wt. %); O 7.30 (Atm. Wt. %).
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A method of producing isolated graphene, comprising isolating graphene from a composition comprising graphene and magnesium, wherein the isolated graphene contains less than 10% by weight of non-graphene material.
The method of claim 2, further comprising forming the composition by a process comprising burning magnesium metal in an atmosphere comprising carbon dioxide.
The method of claim 2, wherein the composition is formed in contact with solid carbon dioxide.
The method of claim 2, further comprising forming the composition by a process comprising reducing carbon dioxide with magnesium metal.
The method of claim 2, wherein the composition further comprises at least one additional element.
The method of claim 2, wherein the isolating comprises removing from the graphene at least one of magnesium oxide, magnesium metal and carbon.
The method of claim 2, wherein the graphene is few-layer g raphene.
The method of claim 2, wherein the isolated graphene has an average particle size of at most 500 nm.
(Previously presented-withdrawn) A method of forming a graphene ink, comprising: preparing isolated graphene by the method of claim 2, and dispersing or suspending the isolated graphene into a liquid. withdrawn
(Previously presented-withdrawn) A method of preparing an electronic device, comprising: preparing isolated graphene by the method of claim 2, and preparing the electronic device from the isolated graphene. withdrawn
(Previously presented-withdrawn) A method of preparing an electronic device, comprising: forming isolated graphene by the method of claim 2, dispersing or suspending the isolated graphene into a liquid, to form a graphene ink, and preparing the electronic device from the graphene ink. withdrawn
The method of claim 2, wherein the isolated graphene contains less than 5% by weight of non-graphene material.
The method of claim 2, wherein the isolated graphene has an average particle size of at most 500 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u K a radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 150% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
The method of claim 2, wherein the isolated graphene is few layer g raphene, the isolated graphene has an average particle size of at most 300 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u Ka radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 125% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
The method of claim 2, further comprising forming the composition by a process comprising reducing carbon dioxide with magnesium metal, wherein the isolated graphene is few layer graphene, the isolated graphene has an average particle size of at most 300 nm, the isolated graphene contains less than 5% by weight of non-graphene material, and an X-ray diffraction pattern under C u Ka radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 125% of the full- width at half-maximum intensity of the (100) peak illustrated in Figure 7.
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The method of claim 22 claim 2, wherein an X-ray diffraction pattern under Cu K, radiation of the isolated graphene has a (100) peak with a full-width at half-maximum intensity which is at most 150% of the full-width at half- maximum intensity of the (100) peak illustrated in Figure 7.
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A method of producing isolated graphene, comprising: reducing carbon dioxide with molten metal, the molten metal comprising magnesium, to form a composition comprising graphene and magnesium oxide, isolating graphene from the composition, to form isolated crystalline graphene, wherein the isolated crystalline graphene has an average particle size of at most 500 nm, and the isolated crystalline graphere graphene contains less than 5% by weight of non-graphene material.
A method of producing isolated graphene, comprising isolating graphene from a composition comprising graphene, magnesium and at least one additional element, wherein the at least one additional element comprises zinc.
Materials described outside the worked examples.
crystalline graphene
C
magnesium
Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 4. 6 33 nm Raman Spectrum of the carbon species exhibiting the G'- band at 2645 cm "', G-band at 1570 cm " and a D -band at 1325 cm ". Inset: the expanded view of the G'-band showing the splitting pattern of the peak. [19]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
XRD (100) peak FWHM of isolated graphene relative to Figure 7 reference | — | C |
Average particle size of isolated graphene (claimed upper bound) | — |
Related documents with shared materials, methods, properties, or citations.
carbon dioxide
CO₂
zinc
Zn
magnesium oxide
MgO
graphene ink
Figure 5. TEM images of few-layer graphene. (a) Graphenes with an average length of 50-100 nm. (b) Crystalline graphenes with an average length of 200nm. -3- WO 2013/036272 PCT/US₂ 01 1/063548 [20]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 7. XRD pattern of the carbon species. [22]
Non-graphene material content (claimed upper bound) | — | C |
Thickness | 50–300 nm | — |
Thickness | 100–300 nm | — |
Duration | ≤ 10 seconds | — |
Duration | ≤ 5 seconds | — |
Duration | ≤ 1 second | — |
Thickness | ≤ 999 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 300 nm | — |
carbon dioxide
CO₂
zinc
Zn
magnesium oxide
MgO
graphene ink
Figure 5. TEM images of few-layer graphene. (a) Graphenes with an average length of 50-100 nm. (b) Crystalline graphenes with an average length of 200nm. -3- WO 2013/036272 PCT/US₂ 01 1/063548 [20]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 7. XRD pattern of the carbon species. [22]
Non-graphene material content (claimed upper bound) | — | C |
Thickness | 50–300 nm | — |
Thickness | 100–300 nm | — |
Duration | ≤ 10 seconds | — |
Duration | ≤ 5 seconds | — |
Duration | ≤ 1 second | — |
Thickness | ≤ 999 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 300 nm | — |
carbon dioxide
CO₂
zinc
Zn
magnesium oxide
MgO
graphene ink
Figure 5. TEM images of few-layer graphene. (a) Graphenes with an average length of 50-100 nm. (b) Crystalline graphenes with an average length of 200nm. -3- WO 2013/036272 PCT/US₂ 01 1/063548 [20]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 7. XRD pattern of the carbon species. [22]
Non-graphene material content (claimed upper bound) | — | C |
Thickness | 50–300 nm | — |
Thickness | 100–300 nm | — |
Duration | ≤ 10 seconds | — |
Duration | ≤ 5 seconds | — |
Duration | ≤ 1 second | — |
Thickness | ≤ 999 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 300 nm | — |
carbon dioxide
CO₂
zinc
Zn
magnesium oxide
MgO
graphene ink
Figure 5. TEM images of few-layer graphene. (a) Graphenes with an average length of 50-100 nm. (b) Crystalline graphenes with an average length of 200nm. -3- WO 2013/036272 PCT/US₂ 01 1/063548 [20]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 6. High resolution TEM image of few-layer graphene exhibiting the number of layers to be between three and seven. [21]
Figure 7. XRD pattern of the carbon species. [22]
Non-graphene material content (claimed upper bound) | — | C |
Thickness | 50–300 nm | — |
Thickness | 100–300 nm | — |
Duration | ≤ 10 seconds | — |
Duration | ≤ 5 seconds | — |
Duration | ≤ 1 second | — |
Thickness | ≤ 999 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 300 nm | — |