Patent
US 9,741,568Sulfur Doping Method for Graphene
TIE LI
US
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US 9,741,568Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is shown to a structural diagram of a chemical vapor deposition reaction 24 fu rn ace of a sulfur doping method for graphene of the present invention. 25
Figure 2 is shown to a heating rate curve graph of embodiment 1 of a sulfur doping 26 method for graphene of the present invention. 27
Figure 3 is shown to a step flow chart of embodiment 1 of a sulfur doping method for 28 graphene of the present invention. 29
Figure 4 is shown to a step flow chart of embodiment 2 of a sulfur doping method for GU H-263US 4 1 graphene of the present invention. 2 Illustration of element label 3 101 tube furnace 4 102 quartz tube 5 103 ventilation path 6 104 graphene 7 S₁₁ ~ S₁₅ each step in embodiment 1 8 S₂₁-S₂₄ each step …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sulfur doping method for graphene, which at least comprises the following steps of:
The sulfur doping method for graphene according to claim 1, characterized in that: in step 2), ventilation and exhaust time of the inert gas is 1 0-30 min, with an airflow range of 500-5000sc cm.
The sulfur doping method for graphene according to claim 1, characterized in that: in step 4), the hydrogen has an airflow range of 1 0~40sc cm, the inert gas has an airflow of 50~200sc cm. GUH-263US Page 4
2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 5 00-1 SVG 15117196.03-29-2017.J₀XW₅₀₆₃PXXIFW2.CLM.2.7.2055.873.2206.917.svg 0.147 0.503 Chemistry Black and white the sulfur source gas comprises one or two of hydrogen sulfide and carbonvl sulfide; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere.
The sulfur doping method for graphene according to claim 2, characterized in that: the hydrogen of step a) has an airflow range of 2 0-100sc cm.
canceled
The sulfur doping method for graphene according to claim =51 characterized in that: the adopted gas for sulfur doping in step 3) comprises inert gas, hydrogen and hydrogen sulfide.
The sulfur doping method for graphene according to claim 6, characterized in that: it is introduced with argon of 5 00-1500sc cm, hydrogen of 2 0-60scc m, hydrogen sulfide of 1~4scc m at 4 00~600 C, to perform doping on grephene for 1 0-30 min. GUH-263US Page 3
The sulfur doping method for graphene according to claim =1 characterized in that: the adopted gas for sulfur doping in step 3) comprises inert gas, hydrogen and carbonyl sulfide.
The sulfur doping method for graphene according to claim 8, characterized in that: it is introduced with helium of SVG 15117196.03-29-2017.J₀XW₅₀₆₃PXXIFW2.CLM.3.5.1010.789.1108.822.svg 0.11 0.327 Chemistry Black and white 1500sc cm, hydrogen of 2 0~60sc cm, carbonyl sulfide of 0.5~ 3sc c m at 7 00~1050° C, to perform sulfur doping for 5 ~20 min.
Materials described outside the worked examples.
graphene
hydrogen
H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is shown to a heating rate curve graph of embodiment 1 of a sulfur doping 26 method for graphene of the present invention. 27
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0–30 min | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,741,568Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is shown to a structural diagram of a chemical vapor deposition reaction 24 fu rn ace of a sulfur doping method for graphene of the present invention. 25
Figure 2 is shown to a heating rate curve graph of embodiment 1 of a sulfur doping 26 method for graphene of the present invention. 27
Figure 3 is shown to a step flow chart of embodiment 1 of a sulfur doping method for 28 graphene of the present invention. 29
Figure 4 is shown to a step flow chart of embodiment 2 of a sulfur doping method for GU H-263US 4 1 graphene of the present invention. 2 Illustration of element label 3 101 tube furnace 4 102 quartz tube 5 103 ventilation path 6 104 graphene 7 S₁₁ ~ S₁₅ each step in embodiment 1 8 S₂₁-S₂₄ each step …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sulfur doping method for graphene, which at least comprises the following steps of:
The sulfur doping method for graphene according to claim 1, characterized in that: in step 2), ventilation and exhaust time of the inert gas is 1 0-30 min, with an airflow range of 500-5000sc cm.
The sulfur doping method for graphene according to claim 1, characterized in that: in step 4), the hydrogen has an airflow range of 1 0~40sc cm, the inert gas has an airflow of 50~200sc cm. GUH-263US Page 4
2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 5 00-1 SVG 15117196.03-29-2017.J₀XW₅₀₆₃PXXIFW2.CLM.2.7.2055.873.2206.917.svg 0.147 0.503 Chemistry Black and white the sulfur source gas comprises one or two of hydrogen sulfide and carbonvl sulfide; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere.
The sulfur doping method for graphene according to claim 2, characterized in that: the hydrogen of step a) has an airflow range of 2 0-100sc cm.
canceled
The sulfur doping method for graphene according to claim =51 characterized in that: the adopted gas for sulfur doping in step 3) comprises inert gas, hydrogen and hydrogen sulfide.
The sulfur doping method for graphene according to claim 6, characterized in that: it is introduced with argon of 5 00-1500sc cm, hydrogen of 2 0-60scc m, hydrogen sulfide of 1~4scc m at 4 00~600 C, to perform doping on grephene for 1 0-30 min. GUH-263US Page 3
The sulfur doping method for graphene according to claim =1 characterized in that: the adopted gas for sulfur doping in step 3) comprises inert gas, hydrogen and carbonyl sulfide.
The sulfur doping method for graphene according to claim 8, characterized in that: it is introduced with helium of SVG 15117196.03-29-2017.J₀XW₅₀₆₃PXXIFW2.CLM.3.5.1010.789.1108.822.svg 0.11 0.327 Chemistry Black and white 1500sc cm, hydrogen of 2 0~60sc cm, carbonyl sulfide of 0.5~ 3sc c m at 7 00~1050° C, to perform sulfur doping for 5 ~20 min.
Materials described outside the worked examples.
graphene
hydrogen
H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is shown to a heating rate curve graph of embodiment 1 of a sulfur doping 26 method for graphene of the present invention. 27
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0–30 min | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,741,568Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is shown to a structural diagram of a chemical vapor deposition reaction 24 fu rn ace of a sulfur doping method for graphene of the present invention. 25
Figure 2 is shown to a heating rate curve graph of embodiment 1 of a sulfur doping 26 method for graphene of the present invention. 27
Figure 3 is shown to a step flow chart of embodiment 1 of a sulfur doping method for 28 graphene of the present invention. 29
Figure 4 is shown to a step flow chart of embodiment 2 of a sulfur doping method for GU H-263US 4 1 graphene of the present invention. 2 Illustration of element label 3 101 tube furnace 4 102 quartz tube 5 103 ventilation path 6 104 graphene 7 S₁₁ ~ S₁₅ each step in embodiment 1 8 S₂₁-S₂₄ each step …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sulfur doping method for graphene, which at least comprises the following steps of:
The sulfur doping method for graphene according to claim 1, characterized in that: in step 2), ventilation and exhaust time of the inert gas is 1 0-30 min, with an airflow range of 500-5000sc cm.
The sulfur doping method for graphene according to claim 1, characterized in that: in step 4), the hydrogen has an airflow range of 1 0~40sc cm, the inert gas has an airflow of 50~200sc cm. GUH-263US Page 4
2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 5 00-1 SVG 15117196.03-29-2017.J₀XW₅₀₆₃PXXIFW2.CLM.2.7.2055.873.2206.917.svg 0.147 0.503 Chemistry Black and white the sulfur source gas comprises one or two of hydrogen sulfide and carbonvl sulfide; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere.
The sulfur doping method for graphene according to claim 2, characterized in that: the hydrogen of step a) has an airflow range of 2 0-100sc cm.
canceled
The sulfur doping method for graphene according to claim =51 characterized in that: the adopted gas for sulfur doping in step 3) comprises inert gas, hydrogen and hydrogen sulfide.
The sulfur doping method for graphene according to claim 6, characterized in that: it is introduced with argon of 5 00-1500sc cm, hydrogen of 2 0-60scc m, hydrogen sulfide of 1~4scc m at 4 00~600 C, to perform doping on grephene for 1 0-30 min. GUH-263US Page 3
The sulfur doping method for graphene according to claim =1 characterized in that: the adopted gas for sulfur doping in step 3) comprises inert gas, hydrogen and carbonyl sulfide.
The sulfur doping method for graphene according to claim 8, characterized in that: it is introduced with helium of SVG 15117196.03-29-2017.J₀XW₅₀₆₃PXXIFW2.CLM.3.5.1010.789.1108.822.svg 0.11 0.327 Chemistry Black and white 1500sc cm, hydrogen of 2 0~60sc cm, carbonyl sulfide of 0.5~ 3sc c m at 7 00~1050° C, to perform sulfur doping for 5 ~20 min.
Materials described outside the worked examples.
graphene
hydrogen
H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is shown to a heating rate curve graph of embodiment 1 of a sulfur doping 26 method for graphene of the present invention. 27
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0–30 min | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,741,568Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is shown to a structural diagram of a chemical vapor deposition reaction 24 fu rn ace of a sulfur doping method for graphene of the present invention. 25
Figure 2 is shown to a heating rate curve graph of embodiment 1 of a sulfur doping 26 method for graphene of the present invention. 27
Figure 3 is shown to a step flow chart of embodiment 1 of a sulfur doping method for 28 graphene of the present invention. 29
Figure 4 is shown to a step flow chart of embodiment 2 of a sulfur doping method for GU H-263US 4 1 graphene of the present invention. 2 Illustration of element label 3 101 tube furnace 4 102 quartz tube 5 103 ventilation path 6 104 graphene 7 S₁₁ ~ S₁₅ each step in embodiment 1 8 S₂₁-S₂₄ each step …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sulfur doping method for graphene, which at least comprises the following steps of:
The sulfur doping method for graphene according to claim 1, characterized in that: in step 2), ventilation and exhaust time of the inert gas is 1 0-30 min, with an airflow range of 500-5000sc cm.
The sulfur doping method for graphene according to claim 1, characterized in that: in step 4), the hydrogen has an airflow range of 1 0~40sc cm, the inert gas has an airflow of 50~200sc cm. GUH-263US Page 4
2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 5 00-1 SVG 15117196.03-29-2017.J₀XW₅₀₆₃PXXIFW2.CLM.2.7.2055.873.2206.917.svg 0.147 0.503 Chemistry Black and white the sulfur source gas comprises one or two of hydrogen sulfide and carbonvl sulfide; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere.
The sulfur doping method for graphene according to claim 2, characterized in that: the hydrogen of step a) has an airflow range of 2 0-100sc cm.
canceled
The sulfur doping method for graphene according to claim =51 characterized in that: the adopted gas for sulfur doping in step 3) comprises inert gas, hydrogen and hydrogen sulfide.
The sulfur doping method for graphene according to claim 6, characterized in that: it is introduced with argon of 5 00-1500sc cm, hydrogen of 2 0-60scc m, hydrogen sulfide of 1~4scc m at 4 00~600 C, to perform doping on grephene for 1 0-30 min. GUH-263US Page 3
The sulfur doping method for graphene according to claim =1 characterized in that: the adopted gas for sulfur doping in step 3) comprises inert gas, hydrogen and carbonyl sulfide.
The sulfur doping method for graphene according to claim 8, characterized in that: it is introduced with helium of SVG 15117196.03-29-2017.J₀XW₅₀₆₃PXXIFW2.CLM.3.5.1010.789.1108.822.svg 0.11 0.327 Chemistry Black and white 1500sc cm, hydrogen of 2 0~60sc cm, carbonyl sulfide of 0.5~ 3sc c m at 7 00~1050° C, to perform sulfur doping for 5 ~20 min.
Materials described outside the worked examples.
graphene
hydrogen
H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 is shown to a heating rate curve graph of embodiment 1 of a sulfur doping 26 method for graphene of the present invention. 27
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0–30 min | — |
Related documents with shared materials, methods, properties, or citations.
hydrogen sulfide
H₂S
carbonyl sulfide
COS
sulfur-doped graphene
argon
Ar
helium
He
hydrogen sulfide
H₂S
carbonyl sulfide
COS
sulfur-doped graphene
argon
Ar
helium
He
hydrogen sulfide
H₂S
carbonyl sulfide
COS
sulfur-doped graphene
argon
Ar
helium
He
hydrogen sulfide
H₂S
carbonyl sulfide
COS
sulfur-doped graphene
argon
Ar
helium
He