Process for forming a graphene layer on a substrate comprising a silicon layer

Abdelkarim Ouerghi

Patent details

Patent

US 9,053,933

Process for forming a graphene layer on a substrate comprising a silicon layer

Abdelkarim Ouerghi

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 6 dependent

1
IndependentCSiCSigraphene-on-SiC-on-Si substrate stack
: A process for forming a graphene layer (-05) on the a surface of a substrate (-9) comprising a silicon layer (1-0-1), the process comprising, in succession, steps of:-forming a silicon carbide ﬁlm (-1-03) on a free surface of the silicon layer; and-gradually heating the substrate until sublimation of the silicon in at least the ﬁrst lattice- arr ays of atoms of the silicon carbide ﬁlm, in order to form the graphene layer on the silicon carbide ﬁlm, the- pr^eess-beirg-ehar^e*-e-i±° a-wherein the free surface of the silicon layer ha-vi-g is a stepped free surface -is-use; and wherein the process comprises the prior step of preheating the substrate under a controlled ﬂow of gaseous silicon, before the step of gradually heating the substrate until sublimation of silicon in at least the ﬁrst lattice-arrays of atoms in the silicon carbide ﬁlm.
1. 2
  Dependent← claim 1
  : The process as claimed in claim 1, in which the stepped free surface comprises treads (-2) separated by risers (1-04) that have substantially identical rises (h), whereas the treads have substantially identical runs (g). 2 SVG 14348653.02-04-2015.I₅R₃AXMSPXXIFW3.CLM₉113563.1.297.161.2250.263.svg 0.34 6.51 Chemistry Black and white
2. 3
  Dependent← claim 1
  : The process as claimed in claim 1, in which the stepped free surface comprises treads (492) separated by risers (-44) that extend substantially perpendicularly to two adjacent treads.
3. 4
  Dependent← claim 1
  : The process as claimed in claim 1, in which the stepped free surface comprises treads (4-2) separated by risers (-44), each tread extending substantially parallel to a holder (8) on which the substrate rests.
4. 5
  Dependent← claim 1
  : The process as claimed in claim 1, in which the stepped free surface comprises treads (402) separated by risers (--4) that have a rise (h) eempﬁsed between 2 and 3 i ngstr a ms, whereas the treads (12) have a run (g) eemprised between 35 and 40 i ngstr a ms.
5. 6
  Dependent← claim 1
  : The process as claimed in claim 1, in which the substrate (40)- is graduall y heated under in a controlled inert gas atmosphere ﬂew-ef-ine-gas.
8
Independent
. canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene-on-SiC-on-Si substrate stack

Cgraphene layer

SiCintermediate film

Sibase substrate layer

Materials

Materials described outside the worked examples.

graphene

Product Layer

silicon carbide film

SiC

Intermediate Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Sic Film Formation

Step 1

Process details

methods:chemical vapor deposition, molecular beam epitaxy, vapor phase epitaxy

substrate surface:stepped free surface of silicon layer

Materials:SiC

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Process for forming a graphene layer on a substrate comprising a silicon layer | Matter42 Literature