1. A process for functionalizing a surface of an epitaxial graphene sample (EG sample) for atomic layer deposition (ALD) of a dielectric in an ALD reactor, the process comp nsing: (1) subjecting the EG sample to an ex situ functionalization step, the ex situ functionalization step comprising: (a) immersing the EG sample in a salt solution for several seconds; (b) removing the EG sample from the salt solution and rinsing with H₂₀ for several seconds; and (c) immersing the rinsed EG sample in a solution of (NH₄ 0 H: H₂ 02: deionized water) in a (1:1:5) ratio at a temperature of about 80-1 1 OC for several minutes to form an OH-terminated surface on the EG sample, the OH-terminated surface being capable of nucleation of dielectrics thereon; and (2) subjecting the EG sample having an OH-terminated surface to an in situ treatment cycle, the in situ treatment cycle comprising a plurality of H₂ 0 pulses inside the ALD reactor, each of the plurality of H₂ 0 pulses being separated only by a corr esponding purge step; wherein the functionalized surface of the EG sample is configured for the disposition of a smooth and conformal dielectric layer thereon.

A process for functionalizing a surface of an epitaxial graphene sample (EG sample) for atomic layer deposition (ALD) of a dielectric in an ALD reactor, the process comp nsing: (1) subjecting the EG sample to an ex situ functionalization step, the ex situ functionalization step comprising: (a) immersing the EG sample in an oxygen plasma for several seconds; (b) removing the EG sample from the oxygen plasma and rinsing with H₂₀ for several seconds; and (c) immersing the rinsed EG sample in a solution of (NH₄ 0 H: H₂ 02: deionized water) in a (1:1:5) ratio at a temperature of about 80-1 1 OC for several minutes to form an OH-terminated surface on the EG sample, the OH-terminated surface being capable of nucleation of dielectrics thereon; and (2) subjecting the EG sample having an OH-terminated surface to an in situ treatment cycle, the in situ treatment cycle comprising a plurality of H₂ 0 pulses inside the ALD reactor, each of the plurality of H₂ 0 pulses being separated only by a corr esponding purge step; wherein the functionalized surface of the EG sample is configured for the disposition of a smooth and conformal dielectric layer thereon. Page 27 of 29 Application of Nelson Y. Garces et al. Atty. Docket No.: 100767-US₃

1. A process for functionalizing a surface of an epitaxial graphene sample (EG sample) for atomic layer deposition (ALD) of a dielectric in an ALD reactor, the process comp nsing: (1) subjecting the EG sample to an ex situ functionalization step, the ex situ functionalization step comprising: (a) immersing the EG sample in a salt solution for several seconds; (b) removing the EG sample from the salt solution and rinsing with H₂₀ for several seconds; and (c) immersing the rinsed EG sample in a solution of (NH₄ 0 H: H₂ 02: deionized water) in a (1:1:5) ratio at a temperature of about 80-1 1 OC for several minutes to form an OH-terminated surface on the EG sample, the OH-terminated surface being capable of nucleation of dielectrics thereon; and (2) subjecting the EG sample having an OH-terminated surface to an in situ treatment cycle, the in situ treatment cycle comprising a plurality of H₂ 0 pulses inside the ALD reactor, each of the plurality of H₂ 0 pulses being separated only by a corr esponding purge step; wherein the functionalized surface of the EG sample is configured for the disposition of a smooth and conformal dielectric layer thereon.

A process for functionalizing a surface of an epitaxial graphene sample (EG sample) for atomic layer deposition (ALD) of a dielectric in an ALD reactor, the process comp nsing: (1) subjecting the EG sample to an ex situ functionalization step, the ex situ functionalization step comprising: (a) immersing the EG sample in an oxygen plasma for several seconds; (b) removing the EG sample from the oxygen plasma and rinsing with H₂₀ for several seconds; and (c) immersing the rinsed EG sample in a solution of (NH₄ 0 H: H₂ 02: deionized water) in a (1:1:5) ratio at a temperature of about 80-1 1 OC for several minutes to form an OH-terminated surface on the EG sample, the OH-terminated surface being capable of nucleation of dielectrics thereon; and (2) subjecting the EG sample having an OH-terminated surface to an in situ treatment cycle, the in situ treatment cycle comprising a plurality of H₂ 0 pulses inside the ALD reactor, each of the plurality of H₂ 0 pulses being separated only by a corr esponding purge step; wherein the functionalized surface of the EG sample is configured for the disposition of a smooth and conformal dielectric layer thereon. Page 27 of 29 Application of Nelson Y. Garces et al. Atty. Docket No.: 100767-US₃

1. A process for functionalizing a surface of an epitaxial graphene sample (EG sample) for atomic layer deposition (ALD) of a dielectric in an ALD reactor, the process comp nsing: (1) subjecting the EG sample to an ex situ functionalization step, the ex situ functionalization step comprising: (a) immersing the EG sample in a salt solution for several seconds; (b) removing the EG sample from the salt solution and rinsing with H₂₀ for several seconds; and (c) immersing the rinsed EG sample in a solution of (NH₄ 0 H: H₂ 02: deionized water) in a (1:1:5) ratio at a temperature of about 80-1 1 OC for several minutes to form an OH-terminated surface on the EG sample, the OH-terminated surface being capable of nucleation of dielectrics thereon; and (2) subjecting the EG sample having an OH-terminated surface to an in situ treatment cycle, the in situ treatment cycle comprising a plurality of H₂ 0 pulses inside the ALD reactor, each of the plurality of H₂ 0 pulses being separated only by a corr esponding purge step; wherein the functionalized surface of the EG sample is configured for the disposition of a smooth and conformal dielectric layer thereon.

A process for functionalizing a surface of an epitaxial graphene sample (EG sample) for atomic layer deposition (ALD) of a dielectric in an ALD reactor, the process comp nsing: (1) subjecting the EG sample to an ex situ functionalization step, the ex situ functionalization step comprising: (a) immersing the EG sample in an oxygen plasma for several seconds; (b) removing the EG sample from the oxygen plasma and rinsing with H₂₀ for several seconds; and (c) immersing the rinsed EG sample in a solution of (NH₄ 0 H: H₂ 02: deionized water) in a (1:1:5) ratio at a temperature of about 80-1 1 OC for several minutes to form an OH-terminated surface on the EG sample, the OH-terminated surface being capable of nucleation of dielectrics thereon; and (2) subjecting the EG sample having an OH-terminated surface to an in situ treatment cycle, the in situ treatment cycle comprising a plurality of H₂ 0 pulses inside the ALD reactor, each of the plurality of H₂ 0 pulses being separated only by a corr esponding purge step; wherein the functionalized surface of the EG sample is configured for the disposition of a smooth and conformal dielectric layer thereon. Page 27 of 29 Application of Nelson Y. Garces et al. Atty. Docket No.: 100767-US₃

1. A process for functionalizing a surface of an epitaxial graphene sample (EG sample) for atomic layer deposition (ALD) of a dielectric in an ALD reactor, the process comp nsing: (1) subjecting the EG sample to an ex situ functionalization step, the ex situ functionalization step comprising: (a) immersing the EG sample in a salt solution for several seconds; (b) removing the EG sample from the salt solution and rinsing with H₂₀ for several seconds; and (c) immersing the rinsed EG sample in a solution of (NH₄ 0 H: H₂ 02: deionized water) in a (1:1:5) ratio at a temperature of about 80-1 1 OC for several minutes to form an OH-terminated surface on the EG sample, the OH-terminated surface being capable of nucleation of dielectrics thereon; and (2) subjecting the EG sample having an OH-terminated surface to an in situ treatment cycle, the in situ treatment cycle comprising a plurality of H₂ 0 pulses inside the ALD reactor, each of the plurality of H₂ 0 pulses being separated only by a corr esponding purge step; wherein the functionalized surface of the EG sample is configured for the disposition of a smooth and conformal dielectric layer thereon.

A process for functionalizing a surface of an epitaxial graphene sample (EG sample) for atomic layer deposition (ALD) of a dielectric in an ALD reactor, the process comp nsing: (1) subjecting the EG sample to an ex situ functionalization step, the ex situ functionalization step comprising: (a) immersing the EG sample in an oxygen plasma for several seconds; (b) removing the EG sample from the oxygen plasma and rinsing with H₂₀ for several seconds; and (c) immersing the rinsed EG sample in a solution of (NH₄ 0 H: H₂ 02: deionized water) in a (1:1:5) ratio at a temperature of about 80-1 1 OC for several minutes to form an OH-terminated surface on the EG sample, the OH-terminated surface being capable of nucleation of dielectrics thereon; and (2) subjecting the EG sample having an OH-terminated surface to an in situ treatment cycle, the in situ treatment cycle comprising a plurality of H₂ 0 pulses inside the ALD reactor, each of the plurality of H₂ 0 pulses being separated only by a corr esponding purge step; wherein the functionalized surface of the EG sample is configured for the disposition of a smooth and conformal dielectric layer thereon. Page 27 of 29 Application of Nelson Y. Garces et al. Atty. Docket No.: 100767-US₃