Patent
Atlas literature
Patent
US 10,808,142Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of graphene quantum dots according to some example embodiments of inventive concepts; [18]
FIGS. 2A to 2E are cross-sectional views for explaining a method of forming a pattern, according to some example embodiments, using a hardmask composition …
FIGS. 3A to 3D are cross-sectional views for explaining a method of forming a pattern, according to another embodiment, using a hardmask composition according …
FIG. 4 illustrates nuclear magnetic resonance (NMR) spectra of graphene quantum dots prepared in Preparation Example 1 and Comparative Preparation Example 1; …
FIG. 5 illustrates results of Fourier-transform infrared (FTIR) spectroscopy on graphene quantum dots after baking in Example 1 and 1,3,6-trinitropyrene; [22]
FIGS. 6A to 6 C illustrate results of X-ray photoelectron spectroscopy on graphene quantum dots prepared in Preparation Example 2 and Comparative Preparation …
FIG. 7B illustrates results of Raman spectroscopy on graphene quantum dots prepared in Comparative Preparation Example 1 and 1,3,6-trinitropyrene (TNP); [25]
FIGS. 8A to 8E are cross-sectional views for explaining a method of forming an electronic device using a hardmask composition according to some example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a graphene quantum dot, the method comprising: reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings, wherein an amount of the polyaromatic hydrocarbon compound including at least four aromatic rings in the graphene quantum dot composition is in a range of about 0.01 wt % to about 40 wt %. Previously presented
The method of claim 1, wherein the polyaromatic hydrocarbon compound including at least four aromatic rings is at least one selected from 1,3,6- nitropyrene, 1,2-dinitropyrene, 1,6-dinitropyrene, 1,3,6-trichloropyrene, and 1,3,6,8- tetrachloropyrene. Original
The method of claim 1, wherein the graphene quantum dot composition further includes a catalyst. Original
The method of claim 1, wherein the organic solvent-is at least one selected from among methyl-2-pyrrolidone, dimethylformamide, dimethylsulfoxide, dimethylacetamide, hexamethylphosphoramide, tetramethylene sulfone, and N-methylformamide; or a mixture thereof. Previously presented
A hardmask composition comprising: the graphene quantum dot prepared using the method of claim 1, the graphene quantum dot having a size of about 50 nm or less; and a composition solvent. Previously presented
Canceled
A hardmask composition comprising: a composition solvent; and a graphene quantum dot, the graphene quantum dot prepared by a preparation method that includes reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 ° C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings, wherein the graphene quantum dot has no peak at a chemical shift of about 9 ppm to about 10 ppm, as analyzed by nuclear magnetic resonance (NMR) spectroscopy, and the graphene quantum dot has a size of about 50 nm or less. Previously presented
A hardmask comprising: a product of coating and thermally treating the hardmask composition of claim 8. Previously presented
A method of forming a pattern, comprising: forming a target etching layer on a substrate; forming a hardmask on the target etching layer, the hardmask including a product of coating a hardmask composition onto the target etching layer and thermally treating the hardmask composition, the hardmask composition including a composition solvent and a graphene quantum dot, the graphene quantum dot having a size of about 50 nm or less, the graphene quantum dot being prepared by a preparation method that includes reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 ° C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings; forming a photoresist layer on the hardmask; forming a hardmask pattern using the photoresist layer as an etch mask, the hardmask pattern including the product of coating and thermally treating the hardmask composition; and etching the target etching layer using the hardmask pattern as an etch mask. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
patterned semiconductor structure
hardmask
Materials described outside the worked examples.
graphene quantum dot
organic solvent
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 illustrates results of Fourier-transform infrared (FTIR) spectroscopy on graphene quantum dots after baking in Example 1 and 1,3,6-trinitropyrene; [22]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quantum dot size (upper bound) | 50 nm | graphene quantum dot |
Table 1
SVG 15925034.
p. 24
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,808,142Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of graphene quantum dots according to some example embodiments of inventive concepts; [18]
FIGS. 2A to 2E are cross-sectional views for explaining a method of forming a pattern, according to some example embodiments, using a hardmask composition …
FIGS. 3A to 3D are cross-sectional views for explaining a method of forming a pattern, according to another embodiment, using a hardmask composition according …
FIG. 4 illustrates nuclear magnetic resonance (NMR) spectra of graphene quantum dots prepared in Preparation Example 1 and Comparative Preparation Example 1; …
FIG. 5 illustrates results of Fourier-transform infrared (FTIR) spectroscopy on graphene quantum dots after baking in Example 1 and 1,3,6-trinitropyrene; [22]
FIGS. 6A to 6 C illustrate results of X-ray photoelectron spectroscopy on graphene quantum dots prepared in Preparation Example 2 and Comparative Preparation …
FIG. 7B illustrates results of Raman spectroscopy on graphene quantum dots prepared in Comparative Preparation Example 1 and 1,3,6-trinitropyrene (TNP); [25]
FIGS. 8A to 8E are cross-sectional views for explaining a method of forming an electronic device using a hardmask composition according to some example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a graphene quantum dot, the method comprising: reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings, wherein an amount of the polyaromatic hydrocarbon compound including at least four aromatic rings in the graphene quantum dot composition is in a range of about 0.01 wt % to about 40 wt %. Previously presented
The method of claim 1, wherein the polyaromatic hydrocarbon compound including at least four aromatic rings is at least one selected from 1,3,6- nitropyrene, 1,2-dinitropyrene, 1,6-dinitropyrene, 1,3,6-trichloropyrene, and 1,3,6,8- tetrachloropyrene. Original
The method of claim 1, wherein the graphene quantum dot composition further includes a catalyst. Original
The method of claim 1, wherein the organic solvent-is at least one selected from among methyl-2-pyrrolidone, dimethylformamide, dimethylsulfoxide, dimethylacetamide, hexamethylphosphoramide, tetramethylene sulfone, and N-methylformamide; or a mixture thereof. Previously presented
A hardmask composition comprising: the graphene quantum dot prepared using the method of claim 1, the graphene quantum dot having a size of about 50 nm or less; and a composition solvent. Previously presented
Canceled
A hardmask composition comprising: a composition solvent; and a graphene quantum dot, the graphene quantum dot prepared by a preparation method that includes reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 ° C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings, wherein the graphene quantum dot has no peak at a chemical shift of about 9 ppm to about 10 ppm, as analyzed by nuclear magnetic resonance (NMR) spectroscopy, and the graphene quantum dot has a size of about 50 nm or less. Previously presented
A hardmask comprising: a product of coating and thermally treating the hardmask composition of claim 8. Previously presented
A method of forming a pattern, comprising: forming a target etching layer on a substrate; forming a hardmask on the target etching layer, the hardmask including a product of coating a hardmask composition onto the target etching layer and thermally treating the hardmask composition, the hardmask composition including a composition solvent and a graphene quantum dot, the graphene quantum dot having a size of about 50 nm or less, the graphene quantum dot being prepared by a preparation method that includes reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 ° C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings; forming a photoresist layer on the hardmask; forming a hardmask pattern using the photoresist layer as an etch mask, the hardmask pattern including the product of coating and thermally treating the hardmask composition; and etching the target etching layer using the hardmask pattern as an etch mask. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
patterned semiconductor structure
hardmask
Materials described outside the worked examples.
graphene quantum dot
organic solvent
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 illustrates results of Fourier-transform infrared (FTIR) spectroscopy on graphene quantum dots after baking in Example 1 and 1,3,6-trinitropyrene; [22]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quantum dot size (upper bound) | 50 nm | graphene quantum dot |
Table 1
SVG 15925034.
p. 24
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,808,142Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of graphene quantum dots according to some example embodiments of inventive concepts; [18]
FIGS. 2A to 2E are cross-sectional views for explaining a method of forming a pattern, according to some example embodiments, using a hardmask composition …
FIGS. 3A to 3D are cross-sectional views for explaining a method of forming a pattern, according to another embodiment, using a hardmask composition according …
FIG. 4 illustrates nuclear magnetic resonance (NMR) spectra of graphene quantum dots prepared in Preparation Example 1 and Comparative Preparation Example 1; …
FIG. 5 illustrates results of Fourier-transform infrared (FTIR) spectroscopy on graphene quantum dots after baking in Example 1 and 1,3,6-trinitropyrene; [22]
FIGS. 6A to 6 C illustrate results of X-ray photoelectron spectroscopy on graphene quantum dots prepared in Preparation Example 2 and Comparative Preparation …
FIG. 7B illustrates results of Raman spectroscopy on graphene quantum dots prepared in Comparative Preparation Example 1 and 1,3,6-trinitropyrene (TNP); [25]
FIGS. 8A to 8E are cross-sectional views for explaining a method of forming an electronic device using a hardmask composition according to some example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a graphene quantum dot, the method comprising: reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings, wherein an amount of the polyaromatic hydrocarbon compound including at least four aromatic rings in the graphene quantum dot composition is in a range of about 0.01 wt % to about 40 wt %. Previously presented
The method of claim 1, wherein the polyaromatic hydrocarbon compound including at least four aromatic rings is at least one selected from 1,3,6- nitropyrene, 1,2-dinitropyrene, 1,6-dinitropyrene, 1,3,6-trichloropyrene, and 1,3,6,8- tetrachloropyrene. Original
The method of claim 1, wherein the graphene quantum dot composition further includes a catalyst. Original
The method of claim 1, wherein the organic solvent-is at least one selected from among methyl-2-pyrrolidone, dimethylformamide, dimethylsulfoxide, dimethylacetamide, hexamethylphosphoramide, tetramethylene sulfone, and N-methylformamide; or a mixture thereof. Previously presented
A hardmask composition comprising: the graphene quantum dot prepared using the method of claim 1, the graphene quantum dot having a size of about 50 nm or less; and a composition solvent. Previously presented
Canceled
A hardmask composition comprising: a composition solvent; and a graphene quantum dot, the graphene quantum dot prepared by a preparation method that includes reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 ° C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings, wherein the graphene quantum dot has no peak at a chemical shift of about 9 ppm to about 10 ppm, as analyzed by nuclear magnetic resonance (NMR) spectroscopy, and the graphene quantum dot has a size of about 50 nm or less. Previously presented
A hardmask comprising: a product of coating and thermally treating the hardmask composition of claim 8. Previously presented
A method of forming a pattern, comprising: forming a target etching layer on a substrate; forming a hardmask on the target etching layer, the hardmask including a product of coating a hardmask composition onto the target etching layer and thermally treating the hardmask composition, the hardmask composition including a composition solvent and a graphene quantum dot, the graphene quantum dot having a size of about 50 nm or less, the graphene quantum dot being prepared by a preparation method that includes reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 ° C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings; forming a photoresist layer on the hardmask; forming a hardmask pattern using the photoresist layer as an etch mask, the hardmask pattern including the product of coating and thermally treating the hardmask composition; and etching the target etching layer using the hardmask pattern as an etch mask. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
patterned semiconductor structure
hardmask
Materials described outside the worked examples.
graphene quantum dot
organic solvent
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 illustrates results of Fourier-transform infrared (FTIR) spectroscopy on graphene quantum dots after baking in Example 1 and 1,3,6-trinitropyrene; [22]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quantum dot size (upper bound) | 50 nm | graphene quantum dot |
Table 1
SVG 15925034.
p. 24
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,808,142Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of graphene quantum dots according to some example embodiments of inventive concepts; [18]
FIGS. 2A to 2E are cross-sectional views for explaining a method of forming a pattern, according to some example embodiments, using a hardmask composition …
FIGS. 3A to 3D are cross-sectional views for explaining a method of forming a pattern, according to another embodiment, using a hardmask composition according …
FIG. 4 illustrates nuclear magnetic resonance (NMR) spectra of graphene quantum dots prepared in Preparation Example 1 and Comparative Preparation Example 1; …
FIG. 5 illustrates results of Fourier-transform infrared (FTIR) spectroscopy on graphene quantum dots after baking in Example 1 and 1,3,6-trinitropyrene; [22]
FIGS. 6A to 6 C illustrate results of X-ray photoelectron spectroscopy on graphene quantum dots prepared in Preparation Example 2 and Comparative Preparation …
FIG. 7B illustrates results of Raman spectroscopy on graphene quantum dots prepared in Comparative Preparation Example 1 and 1,3,6-trinitropyrene (TNP); [25]
FIGS. 8A to 8E are cross-sectional views for explaining a method of forming an electronic device using a hardmask composition according to some example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a graphene quantum dot, the method comprising: reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings, wherein an amount of the polyaromatic hydrocarbon compound including at least four aromatic rings in the graphene quantum dot composition is in a range of about 0.01 wt % to about 40 wt %. Previously presented
The method of claim 1, wherein the polyaromatic hydrocarbon compound including at least four aromatic rings is at least one selected from 1,3,6- nitropyrene, 1,2-dinitropyrene, 1,6-dinitropyrene, 1,3,6-trichloropyrene, and 1,3,6,8- tetrachloropyrene. Original
The method of claim 1, wherein the graphene quantum dot composition further includes a catalyst. Original
The method of claim 1, wherein the organic solvent-is at least one selected from among methyl-2-pyrrolidone, dimethylformamide, dimethylsulfoxide, dimethylacetamide, hexamethylphosphoramide, tetramethylene sulfone, and N-methylformamide; or a mixture thereof. Previously presented
A hardmask composition comprising: the graphene quantum dot prepared using the method of claim 1, the graphene quantum dot having a size of about 50 nm or less; and a composition solvent. Previously presented
Canceled
A hardmask composition comprising: a composition solvent; and a graphene quantum dot, the graphene quantum dot prepared by a preparation method that includes reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 ° C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings, wherein the graphene quantum dot has no peak at a chemical shift of about 9 ppm to about 10 ppm, as analyzed by nuclear magnetic resonance (NMR) spectroscopy, and the graphene quantum dot has a size of about 50 nm or less. Previously presented
A hardmask comprising: a product of coating and thermally treating the hardmask composition of claim 8. Previously presented
A method of forming a pattern, comprising: forming a target etching layer on a substrate; forming a hardmask on the target etching layer, the hardmask including a product of coating a hardmask composition onto the target etching layer and thermally treating the hardmask composition, the hardmask composition including a composition solvent and a graphene quantum dot, the graphene quantum dot having a size of about 50 nm or less, the graphene quantum dot being prepared by a preparation method that includes reacting a graphene quantum dot composition including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250 ° C or less, the polyaromatic hydrocarbon compound including at least four aromatic rings; forming a photoresist layer on the hardmask; forming a hardmask pattern using the photoresist layer as an etch mask, the hardmask pattern including the product of coating and thermally treating the hardmask composition; and etching the target etching layer using the hardmask pattern as an etch mask. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
patterned semiconductor structure
hardmask
Materials described outside the worked examples.
graphene quantum dot
organic solvent
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 illustrates results of Fourier-transform infrared (FTIR) spectroscopy on graphene quantum dots after baking in Example 1 and 1,3,6-trinitropyrene; [22]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quantum dot size (upper bound) | 50 nm | graphene quantum dot |
Table 1
SVG 15925034.
p. 24
Related documents with shared materials, methods, properties, or citations.
1,3,6-trinitropyrene
1,2-dinitropyrene
1,6-dinitropyrene
1,3,6-trichloropyrene
1,3,6,8-tetrachloropyrene
catalyst
composition solvent
FIGS. 6A to 6 C illustrate results of X-ray photoelectron spectroscopy on graphene quantum dots prepared in Preparation Example 2 and Comparative Preparation …
FIG. 7B illustrates results of Raman spectroscopy on graphene quantum dots prepared in Comparative Preparation Example 1 and 1,3,6-trinitropyrene (TNP); [25]
NMR no peak at 9-10 ppm chemical shift |
| — |
graphene quantum dot |
XPS C1s peak binding energy of hardmask product | — | graphene quantum dot |
XPS sp3 C-N peak binding energy of hardmask product | — | graphene quantum dot |
XPS O1s peak binding energy of hardmask product | — | graphene quantum dot |
XPS N1s peak binding energy of hardmask product | — | graphene quantum dot |
C:N atom ratio in graphene quantum dot | — | graphene quantum dot |
Thickness | 0.1–10 nm | — |
— | 284–290 eV | — |
— | 287–289 eV | — |
— | 530–535 eV | — |
— | 398–402 eV | — |
Thickness | 1–50 nm | — |
Thickness | 1–30 nm | — |
Thickness | 1–10 nm | — |
Thickness | 2–10 nm | — |
Thickness | 5–8 nm | — |
Thickness | 6–8 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 0.01–10 nm | — |
Thickness | 0.34–100 nm | — |
Thickness | 0.334–0.478 nm | — |
Thickness | 0.6–2 nm | — |
Thickness | 0.7–1 nm | — |
Thickness | 0.3–0.7 nm | — |
Thickness | 10–10000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 1–1350 cm | — |
Thickness | 1–3700 cm | — |
Thickness | 1–1800 cm | — |
Thickness | 1340–1350 cm | — |
1,3,6-trinitropyrene
1,2-dinitropyrene
1,6-dinitropyrene
1,3,6-trichloropyrene
1,3,6,8-tetrachloropyrene
catalyst
composition solvent
FIGS. 6A to 6 C illustrate results of X-ray photoelectron spectroscopy on graphene quantum dots prepared in Preparation Example 2 and Comparative Preparation …
FIG. 7B illustrates results of Raman spectroscopy on graphene quantum dots prepared in Comparative Preparation Example 1 and 1,3,6-trinitropyrene (TNP); [25]
NMR no peak at 9-10 ppm chemical shift |
| — |
graphene quantum dot |
XPS C1s peak binding energy of hardmask product | — | graphene quantum dot |
XPS sp3 C-N peak binding energy of hardmask product | — | graphene quantum dot |
XPS O1s peak binding energy of hardmask product | — | graphene quantum dot |
XPS N1s peak binding energy of hardmask product | — | graphene quantum dot |
C:N atom ratio in graphene quantum dot | — | graphene quantum dot |
Thickness | 0.1–10 nm | — |
— | 284–290 eV | — |
— | 287–289 eV | — |
— | 530–535 eV | — |
— | 398–402 eV | — |
Thickness | 1–50 nm | — |
Thickness | 1–30 nm | — |
Thickness | 1–10 nm | — |
Thickness | 2–10 nm | — |
Thickness | 5–8 nm | — |
Thickness | 6–8 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 0.01–10 nm | — |
Thickness | 0.34–100 nm | — |
Thickness | 0.334–0.478 nm | — |
Thickness | 0.6–2 nm | — |
Thickness | 0.7–1 nm | — |
Thickness | 0.3–0.7 nm | — |
Thickness | 10–10000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 1–1350 cm | — |
Thickness | 1–3700 cm | — |
Thickness | 1–1800 cm | — |
Thickness | 1340–1350 cm | — |
1,3,6-trinitropyrene
1,2-dinitropyrene
1,6-dinitropyrene
1,3,6-trichloropyrene
1,3,6,8-tetrachloropyrene
catalyst
composition solvent
FIGS. 6A to 6 C illustrate results of X-ray photoelectron spectroscopy on graphene quantum dots prepared in Preparation Example 2 and Comparative Preparation …
FIG. 7B illustrates results of Raman spectroscopy on graphene quantum dots prepared in Comparative Preparation Example 1 and 1,3,6-trinitropyrene (TNP); [25]
NMR no peak at 9-10 ppm chemical shift |
| — |
graphene quantum dot |
XPS C1s peak binding energy of hardmask product | — | graphene quantum dot |
XPS sp3 C-N peak binding energy of hardmask product | — | graphene quantum dot |
XPS O1s peak binding energy of hardmask product | — | graphene quantum dot |
XPS N1s peak binding energy of hardmask product | — | graphene quantum dot |
C:N atom ratio in graphene quantum dot | — | graphene quantum dot |
Thickness | 0.1–10 nm | — |
— | 284–290 eV | — |
— | 287–289 eV | — |
— | 530–535 eV | — |
— | 398–402 eV | — |
Thickness | 1–50 nm | — |
Thickness | 1–30 nm | — |
Thickness | 1–10 nm | — |
Thickness | 2–10 nm | — |
Thickness | 5–8 nm | — |
Thickness | 6–8 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 0.01–10 nm | — |
Thickness | 0.34–100 nm | — |
Thickness | 0.334–0.478 nm | — |
Thickness | 0.6–2 nm | — |
Thickness | 0.7–1 nm | — |
Thickness | 0.3–0.7 nm | — |
Thickness | 10–10000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 1–1350 cm | — |
Thickness | 1–3700 cm | — |
Thickness | 1–1800 cm | — |
Thickness | 1340–1350 cm | — |
1,3,6-trinitropyrene
1,2-dinitropyrene
1,6-dinitropyrene
1,3,6-trichloropyrene
1,3,6,8-tetrachloropyrene
catalyst
composition solvent
FIGS. 6A to 6 C illustrate results of X-ray photoelectron spectroscopy on graphene quantum dots prepared in Preparation Example 2 and Comparative Preparation …
FIG. 7B illustrates results of Raman spectroscopy on graphene quantum dots prepared in Comparative Preparation Example 1 and 1,3,6-trinitropyrene (TNP); [25]
NMR no peak at 9-10 ppm chemical shift |
| — |
graphene quantum dot |
XPS C1s peak binding energy of hardmask product | — | graphene quantum dot |
XPS sp3 C-N peak binding energy of hardmask product | — | graphene quantum dot |
XPS O1s peak binding energy of hardmask product | — | graphene quantum dot |
XPS N1s peak binding energy of hardmask product | — | graphene quantum dot |
C:N atom ratio in graphene quantum dot | — | graphene quantum dot |
Thickness | 0.1–10 nm | — |
— | 284–290 eV | — |
— | 287–289 eV | — |
— | 530–535 eV | — |
— | 398–402 eV | — |
Thickness | 1–50 nm | — |
Thickness | 1–30 nm | — |
Thickness | 1–10 nm | — |
Thickness | 2–10 nm | — |
Thickness | 5–8 nm | — |
Thickness | 6–8 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 0.01–10 nm | — |
Thickness | 0.34–100 nm | — |
Thickness | 0.334–0.478 nm | — |
Thickness | 0.6–2 nm | — |
Thickness | 0.7–1 nm | — |
Thickness | 0.3–0.7 nm | — |
Thickness | 10–10000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–500 nm | — |
Thickness | 1–1350 cm | — |
Thickness | 1–3700 cm | — |
Thickness | 1–1800 cm | — |
Thickness | 1340–1350 cm | — |
