Patent
US 10,253,409METHOD OF MANUFACTURING GRAPHENE USING METAL
KANG HYUNG KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,253,409Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a set of SEM photographs, wherein
FIG. 2(c) shows graphene grown by supplying methane together with hydrogen to the copper foil.
FIG. 3(b) shows the results of measuring the orientation of the foil by XRD after growing graphene thereon.
FIG. 4 is a graphic diagram showing the results of measurement of the Raman spectrum of monolayer graphene.
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
FIG. 6 is a set of optical micrographs showing graphene grown on an electrodeposited copper foil in one direction (CVD, 1050 ° C for 10 m in);
FIG. 7 shows various steps formed when annealing a metal thin sheet in a gas atmosphere.
FIG. 8 is a set of schematic diagrams showing the arrangement of copper atoms and the state of carbon alloyed with a substitutional element.
FIG. 9 shows the results of synthesizing graphene using copper (
FIG. 10 shows the results of synthesizing graphene using copper (
FIG. 11(c) shows the results obtained by annealing a copper alloy foil containing 4 0 ppm of chromium at 1000 0 C for 30 minutes in atmosphere of a mixed gas …
FIG. 12 shows the results of synthesizing graphene by CVD at 1000 0 C for 1 second in an atmosphere of a mixed gas of 30sc c m methane and 1 0sc c m hydrogen.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, the method comprising: forming step structures on the surface of a face-centered cubic metal catalyst substrate having a (100) or (111) orientation; and supplying hydrocarbon to the substrate to grow graphene comprising a monolayer graphene thin film thereon, wherein the metal catalyst is electroplated by a pulse wave current having a rest time after current supply, and wherein the metal catalyst is annealed at a temperature of 600 0 C to 1070 0 C after electroplating. Currently amended
The method of claim 1, wherein the pulse wave current is applied at a ratio of current supply time:rest time of 15:85 to 85:15. Original
The method of claim 1, wherein the pulse wave current has a current density of 1- 10 A/d m2. Original
The method of claim 1, wherein the monolayer graphene thin film is 95 % or more of the graphene. Original
The method of claim 1, wherein the metal catalyst is a face-centered cubic metal foil obtained by plating a metal on a cathode rotating drum. Original
Canceled
Materials described outside the worked examples.
graphene (monolayer graphene thin film)
face-centered cubic metal catalyst substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a set of SEM photographs, wherein
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
monolayer graphene thin film fraction | ≥95 % | graphene (monolayer graphene thin film) |
Thickness | 1–20 nm |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR MANUFACTURING GRAPHENE USING COVER MEMBER AND METHOD FOR MANUFACTURING ELECTRONIC ELEMENT INCLUDING SAME
Method for Making Porous Graphene Membranes and Membranes Produced Using the Method
Patent
Atlas literature
Patent
US 10,253,409Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a set of SEM photographs, wherein
FIG. 2(c) shows graphene grown by supplying methane together with hydrogen to the copper foil.
FIG. 3(b) shows the results of measuring the orientation of the foil by XRD after growing graphene thereon.
FIG. 4 is a graphic diagram showing the results of measurement of the Raman spectrum of monolayer graphene.
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
FIG. 6 is a set of optical micrographs showing graphene grown on an electrodeposited copper foil in one direction (CVD, 1050 ° C for 10 m in);
FIG. 7 shows various steps formed when annealing a metal thin sheet in a gas atmosphere.
FIG. 8 is a set of schematic diagrams showing the arrangement of copper atoms and the state of carbon alloyed with a substitutional element.
FIG. 9 shows the results of synthesizing graphene using copper (
FIG. 10 shows the results of synthesizing graphene using copper (
FIG. 11(c) shows the results obtained by annealing a copper alloy foil containing 4 0 ppm of chromium at 1000 0 C for 30 minutes in atmosphere of a mixed gas …
FIG. 12 shows the results of synthesizing graphene by CVD at 1000 0 C for 1 second in an atmosphere of a mixed gas of 30sc c m methane and 1 0sc c m hydrogen.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, the method comprising: forming step structures on the surface of a face-centered cubic metal catalyst substrate having a (100) or (111) orientation; and supplying hydrocarbon to the substrate to grow graphene comprising a monolayer graphene thin film thereon, wherein the metal catalyst is electroplated by a pulse wave current having a rest time after current supply, and wherein the metal catalyst is annealed at a temperature of 600 0 C to 1070 0 C after electroplating. Currently amended
The method of claim 1, wherein the pulse wave current is applied at a ratio of current supply time:rest time of 15:85 to 85:15. Original
The method of claim 1, wherein the pulse wave current has a current density of 1- 10 A/d m2. Original
The method of claim 1, wherein the monolayer graphene thin film is 95 % or more of the graphene. Original
The method of claim 1, wherein the metal catalyst is a face-centered cubic metal foil obtained by plating a metal on a cathode rotating drum. Original
Canceled
Materials described outside the worked examples.
graphene (monolayer graphene thin film)
face-centered cubic metal catalyst substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a set of SEM photographs, wherein
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
monolayer graphene thin film fraction | ≥95 % | graphene (monolayer graphene thin film) |
Thickness | 1–20 nm |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR MANUFACTURING GRAPHENE USING COVER MEMBER AND METHOD FOR MANUFACTURING ELECTRONIC ELEMENT INCLUDING SAME
Method for Making Porous Graphene Membranes and Membranes Produced Using the Method
Patent
Atlas literature
Patent
US 10,253,409Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a set of SEM photographs, wherein
FIG. 2(c) shows graphene grown by supplying methane together with hydrogen to the copper foil.
FIG. 3(b) shows the results of measuring the orientation of the foil by XRD after growing graphene thereon.
FIG. 4 is a graphic diagram showing the results of measurement of the Raman spectrum of monolayer graphene.
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
FIG. 6 is a set of optical micrographs showing graphene grown on an electrodeposited copper foil in one direction (CVD, 1050 ° C for 10 m in);
FIG. 7 shows various steps formed when annealing a metal thin sheet in a gas atmosphere.
FIG. 8 is a set of schematic diagrams showing the arrangement of copper atoms and the state of carbon alloyed with a substitutional element.
FIG. 9 shows the results of synthesizing graphene using copper (
FIG. 10 shows the results of synthesizing graphene using copper (
FIG. 11(c) shows the results obtained by annealing a copper alloy foil containing 4 0 ppm of chromium at 1000 0 C for 30 minutes in atmosphere of a mixed gas …
FIG. 12 shows the results of synthesizing graphene by CVD at 1000 0 C for 1 second in an atmosphere of a mixed gas of 30sc c m methane and 1 0sc c m hydrogen.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, the method comprising: forming step structures on the surface of a face-centered cubic metal catalyst substrate having a (100) or (111) orientation; and supplying hydrocarbon to the substrate to grow graphene comprising a monolayer graphene thin film thereon, wherein the metal catalyst is electroplated by a pulse wave current having a rest time after current supply, and wherein the metal catalyst is annealed at a temperature of 600 0 C to 1070 0 C after electroplating. Currently amended
The method of claim 1, wherein the pulse wave current is applied at a ratio of current supply time:rest time of 15:85 to 85:15. Original
The method of claim 1, wherein the pulse wave current has a current density of 1- 10 A/d m2. Original
The method of claim 1, wherein the monolayer graphene thin film is 95 % or more of the graphene. Original
The method of claim 1, wherein the metal catalyst is a face-centered cubic metal foil obtained by plating a metal on a cathode rotating drum. Original
Canceled
Materials described outside the worked examples.
graphene (monolayer graphene thin film)
face-centered cubic metal catalyst substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a set of SEM photographs, wherein
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
monolayer graphene thin film fraction | ≥95 % | graphene (monolayer graphene thin film) |
Thickness | 1–20 nm |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR MANUFACTURING GRAPHENE USING COVER MEMBER AND METHOD FOR MANUFACTURING ELECTRONIC ELEMENT INCLUDING SAME
Method for Making Porous Graphene Membranes and Membranes Produced Using the Method
Patent
Atlas literature
Patent
US 10,253,409Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a set of SEM photographs, wherein
FIG. 2(c) shows graphene grown by supplying methane together with hydrogen to the copper foil.
FIG. 3(b) shows the results of measuring the orientation of the foil by XRD after growing graphene thereon.
FIG. 4 is a graphic diagram showing the results of measurement of the Raman spectrum of monolayer graphene.
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
FIG. 6 is a set of optical micrographs showing graphene grown on an electrodeposited copper foil in one direction (CVD, 1050 ° C for 10 m in);
FIG. 7 shows various steps formed when annealing a metal thin sheet in a gas atmosphere.
FIG. 8 is a set of schematic diagrams showing the arrangement of copper atoms and the state of carbon alloyed with a substitutional element.
FIG. 9 shows the results of synthesizing graphene using copper (
FIG. 10 shows the results of synthesizing graphene using copper (
FIG. 11(c) shows the results obtained by annealing a copper alloy foil containing 4 0 ppm of chromium at 1000 0 C for 30 minutes in atmosphere of a mixed gas …
FIG. 12 shows the results of synthesizing graphene by CVD at 1000 0 C for 1 second in an atmosphere of a mixed gas of 30sc c m methane and 1 0sc c m hydrogen.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene, the method comprising: forming step structures on the surface of a face-centered cubic metal catalyst substrate having a (100) or (111) orientation; and supplying hydrocarbon to the substrate to grow graphene comprising a monolayer graphene thin film thereon, wherein the metal catalyst is electroplated by a pulse wave current having a rest time after current supply, and wherein the metal catalyst is annealed at a temperature of 600 0 C to 1070 0 C after electroplating. Currently amended
The method of claim 1, wherein the pulse wave current is applied at a ratio of current supply time:rest time of 15:85 to 85:15. Original
The method of claim 1, wherein the pulse wave current has a current density of 1- 10 A/d m2. Original
The method of claim 1, wherein the monolayer graphene thin film is 95 % or more of the graphene. Original
The method of claim 1, wherein the metal catalyst is a face-centered cubic metal foil obtained by plating a metal on a cathode rotating drum. Original
Canceled
Materials described outside the worked examples.
graphene (monolayer graphene thin film)
face-centered cubic metal catalyst substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a set of SEM photographs, wherein
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
monolayer graphene thin film fraction | ≥95 % | graphene (monolayer graphene thin film) |
Thickness | 1–20 nm |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR MANUFACTURING GRAPHENE USING COVER MEMBER AND METHOD FOR MANUFACTURING ELECTRONIC ELEMENT INCLUDING SAME
Method for Making Porous Graphene Membranes and Membranes Produced Using the Method
copper
Cu
silver
Ag
gold
Au
hydrocarbon
electrodeposited copper foil
FIG. 3(b) shows the results of measuring the orientation of the foil by XRD after growing graphene thereon.
FIG. 4 is a graphic diagram showing the results of measurement of the Raman spectrum of monolayer graphene.
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
| — |
Temperature | 1000–1060 °C | — |
Flow Rate | 0.1–10 sccm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 20 nm | — |
copper
Cu
silver
Ag
gold
Au
hydrocarbon
electrodeposited copper foil
FIG. 3(b) shows the results of measuring the orientation of the foil by XRD after growing graphene thereon.
FIG. 4 is a graphic diagram showing the results of measurement of the Raman spectrum of monolayer graphene.
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
| — |
Temperature | 1000–1060 °C | — |
Flow Rate | 0.1–10 sccm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 20 nm | — |
copper
Cu
silver
Ag
gold
Au
hydrocarbon
electrodeposited copper foil
FIG. 3(b) shows the results of measuring the orientation of the foil by XRD after growing graphene thereon.
FIG. 4 is a graphic diagram showing the results of measurement of the Raman spectrum of monolayer graphene.
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
| — |
Temperature | 1000–1060 °C | — |
Flow Rate | 0.1–10 sccm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 20 nm | — |
copper
Cu
silver
Ag
gold
Au
hydrocarbon
electrodeposited copper foil
FIG. 3(b) shows the results of measuring the orientation of the foil by XRD after growing graphene thereon.
FIG. 4 is a graphic diagram showing the results of measurement of the Raman spectrum of monolayer graphene.
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
FIGS. 5(c) and 5(d) show the results of measuring the state of a specimen obtained by plating copper on a copper foil at a ratio of 50:50 at a current density …
| — |
Temperature | 1000–1060 °C | — |
Flow Rate | 0.1–10 sccm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 20 nm | — |