Patent
US 10,100,426Method for Producing Gallium Nitride Crystal
Takashi SATOH
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,100,426Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Assessed Ga-Na Phase 5 Diagram). When the ratio r c a of the amount of gallium [Ga] by mole relative to the total amount of gallium [Ga] and sodium …
FIGS. 2 and 5), the reaction vessel 13 is taken out from ethanol, and then is immersed 10 in the water 52 in a vessel 58 made of glass as illustrated in
FIG. 3 is presented for illustrative purposes only. The 20 composition ratios of the alloy 51 in the first embodiment will not be denied if they differ from …
FIG. 4 is a flowchart illustrating the procedure from growth of the gallium nitride crystal 5 to collection of gallium in the first embodiment. First, the seed …
FIG. 5 is a diagram illustrating a state inside the reaction vessel 13 from which residual sodium 50 has been removed. In this state, most of the alloy 51 …
FIG. 6. When the reaction vessel 13 is immersed in the water 52, the sodium 50 that remains in the reaction vessel 13 in small amounts reacts with the water …
FIG. 7 is a diagram illustrating a state in which Docket No. PRCA-16147-US,EP,CN separated gallium is being collected. Description of Embodiment [0018] First …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a gallium nitride crystal, the method comprising: (a) growing a gallium nitride crystal in a reaction vessel, by dissolving nitrogen in a mixed melt including gallium and sodium, in the reaction vessel, wherein an alloy that includes gallium and sodium forms in the reaction vessel during the growing of the gallium nitride crystal in (a); (a2) removing residual sodium remaining in the reaction vessel after (a), while leaving the gallium nitride crystal and the alloy that includes gallium and sodium, in the reaction vessel: (b) separating elemental gallium from [[an]] the alloy that includes gallium and [[the]] sodium, by reacting the alloy and a liquid that ionizes [[the]] sodium and separating the sodium as sodium ions in the liquid and the elemental gallium from the alloy; [[and]] (c) collecting the separated elemental gallium separated in (b); and (d) repeating (a) to further grow the gallium nitride crystal remaining after (a2) or to grow another gallium nitride crystal, by using the collected elemental gallium, which was collected in (c). Currently amended
The method for producing a gallium nitride crystal according to claim 1, wherein the liquid is water having a temperature higher than a melting point of gallium. Original
The method for producing a gallium nitride crystal according to claim 1, wherein the liquid is an acid. Original
The method for producing a gallium nitride crystal according to claim 1, wherein the collecting is performed when an amount of the gallium by mole relative to a total amount of the gallium and the sodium by mole in the mixed melt after the growing accounts for greater than 0% and 80% or less. Previously presented
The method for producing a gallium nitride crystal according to claim 1, wherein the collecting is performed when an amount of the gallium by mole relative to a total amount of the gallium and the sodium by mole in the mixed melt after the growing accounts for greater than 0% and 64% or less. Previously presented
The method for producing a gallium nitride crystal according to claim 1, wherein the alloy is an inte rm etallic compound composed of the gallium and the sodium. Previously presented
The method for producing a gallium nitride crystal according to- claim 1, wherein elemental gallium is collected in a liquefied state. Previously presented
The method according to- claim 1, further comprising applying heat during (a) to melt the gallium and the sodium in the reaction vessel. New
Canceled
Canceled
Materials described outside the worked examples.
gallium nitride crystal
GaN
elemental gallium
Ga
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE SINGLE CRYSTAL GROWING METHOD AND GALLIUM NITRIDE SINGLE CRYSTAL
CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PRODUCING METHOD, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE SUBSTRATE
Patent
Atlas literature
Patent
US 10,100,426Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Assessed Ga-Na Phase 5 Diagram). When the ratio r c a of the amount of gallium [Ga] by mole relative to the total amount of gallium [Ga] and sodium …
FIGS. 2 and 5), the reaction vessel 13 is taken out from ethanol, and then is immersed 10 in the water 52 in a vessel 58 made of glass as illustrated in
FIG. 3 is presented for illustrative purposes only. The 20 composition ratios of the alloy 51 in the first embodiment will not be denied if they differ from …
FIG. 4 is a flowchart illustrating the procedure from growth of the gallium nitride crystal 5 to collection of gallium in the first embodiment. First, the seed …
FIG. 5 is a diagram illustrating a state inside the reaction vessel 13 from which residual sodium 50 has been removed. In this state, most of the alloy 51 …
FIG. 6. When the reaction vessel 13 is immersed in the water 52, the sodium 50 that remains in the reaction vessel 13 in small amounts reacts with the water …
FIG. 7 is a diagram illustrating a state in which Docket No. PRCA-16147-US,EP,CN separated gallium is being collected. Description of Embodiment [0018] First …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a gallium nitride crystal, the method comprising: (a) growing a gallium nitride crystal in a reaction vessel, by dissolving nitrogen in a mixed melt including gallium and sodium, in the reaction vessel, wherein an alloy that includes gallium and sodium forms in the reaction vessel during the growing of the gallium nitride crystal in (a); (a2) removing residual sodium remaining in the reaction vessel after (a), while leaving the gallium nitride crystal and the alloy that includes gallium and sodium, in the reaction vessel: (b) separating elemental gallium from [[an]] the alloy that includes gallium and [[the]] sodium, by reacting the alloy and a liquid that ionizes [[the]] sodium and separating the sodium as sodium ions in the liquid and the elemental gallium from the alloy; [[and]] (c) collecting the separated elemental gallium separated in (b); and (d) repeating (a) to further grow the gallium nitride crystal remaining after (a2) or to grow another gallium nitride crystal, by using the collected elemental gallium, which was collected in (c). Currently amended
The method for producing a gallium nitride crystal according to claim 1, wherein the liquid is water having a temperature higher than a melting point of gallium. Original
The method for producing a gallium nitride crystal according to claim 1, wherein the liquid is an acid. Original
The method for producing a gallium nitride crystal according to claim 1, wherein the collecting is performed when an amount of the gallium by mole relative to a total amount of the gallium and the sodium by mole in the mixed melt after the growing accounts for greater than 0% and 80% or less. Previously presented
The method for producing a gallium nitride crystal according to claim 1, wherein the collecting is performed when an amount of the gallium by mole relative to a total amount of the gallium and the sodium by mole in the mixed melt after the growing accounts for greater than 0% and 64% or less. Previously presented
The method for producing a gallium nitride crystal according to claim 1, wherein the alloy is an inte rm etallic compound composed of the gallium and the sodium. Previously presented
The method for producing a gallium nitride crystal according to- claim 1, wherein elemental gallium is collected in a liquefied state. Previously presented
The method according to- claim 1, further comprising applying heat during (a) to melt the gallium and the sodium in the reaction vessel. New
Canceled
Canceled
Materials described outside the worked examples.
gallium nitride crystal
GaN
elemental gallium
Ga
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE SINGLE CRYSTAL GROWING METHOD AND GALLIUM NITRIDE SINGLE CRYSTAL
CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PRODUCING METHOD, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE SUBSTRATE
Patent
Atlas literature
Patent
US 10,100,426Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Assessed Ga-Na Phase 5 Diagram). When the ratio r c a of the amount of gallium [Ga] by mole relative to the total amount of gallium [Ga] and sodium …
FIGS. 2 and 5), the reaction vessel 13 is taken out from ethanol, and then is immersed 10 in the water 52 in a vessel 58 made of glass as illustrated in
FIG. 3 is presented for illustrative purposes only. The 20 composition ratios of the alloy 51 in the first embodiment will not be denied if they differ from …
FIG. 4 is a flowchart illustrating the procedure from growth of the gallium nitride crystal 5 to collection of gallium in the first embodiment. First, the seed …
FIG. 5 is a diagram illustrating a state inside the reaction vessel 13 from which residual sodium 50 has been removed. In this state, most of the alloy 51 …
FIG. 6. When the reaction vessel 13 is immersed in the water 52, the sodium 50 that remains in the reaction vessel 13 in small amounts reacts with the water …
FIG. 7 is a diagram illustrating a state in which Docket No. PRCA-16147-US,EP,CN separated gallium is being collected. Description of Embodiment [0018] First …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a gallium nitride crystal, the method comprising: (a) growing a gallium nitride crystal in a reaction vessel, by dissolving nitrogen in a mixed melt including gallium and sodium, in the reaction vessel, wherein an alloy that includes gallium and sodium forms in the reaction vessel during the growing of the gallium nitride crystal in (a); (a2) removing residual sodium remaining in the reaction vessel after (a), while leaving the gallium nitride crystal and the alloy that includes gallium and sodium, in the reaction vessel: (b) separating elemental gallium from [[an]] the alloy that includes gallium and [[the]] sodium, by reacting the alloy and a liquid that ionizes [[the]] sodium and separating the sodium as sodium ions in the liquid and the elemental gallium from the alloy; [[and]] (c) collecting the separated elemental gallium separated in (b); and (d) repeating (a) to further grow the gallium nitride crystal remaining after (a2) or to grow another gallium nitride crystal, by using the collected elemental gallium, which was collected in (c). Currently amended
The method for producing a gallium nitride crystal according to claim 1, wherein the liquid is water having a temperature higher than a melting point of gallium. Original
The method for producing a gallium nitride crystal according to claim 1, wherein the liquid is an acid. Original
The method for producing a gallium nitride crystal according to claim 1, wherein the collecting is performed when an amount of the gallium by mole relative to a total amount of the gallium and the sodium by mole in the mixed melt after the growing accounts for greater than 0% and 80% or less. Previously presented
The method for producing a gallium nitride crystal according to claim 1, wherein the collecting is performed when an amount of the gallium by mole relative to a total amount of the gallium and the sodium by mole in the mixed melt after the growing accounts for greater than 0% and 64% or less. Previously presented
The method for producing a gallium nitride crystal according to claim 1, wherein the alloy is an inte rm etallic compound composed of the gallium and the sodium. Previously presented
The method for producing a gallium nitride crystal according to- claim 1, wherein elemental gallium is collected in a liquefied state. Previously presented
The method according to- claim 1, further comprising applying heat during (a) to melt the gallium and the sodium in the reaction vessel. New
Canceled
Canceled
Materials described outside the worked examples.
gallium nitride crystal
GaN
elemental gallium
Ga
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE SINGLE CRYSTAL GROWING METHOD AND GALLIUM NITRIDE SINGLE CRYSTAL
CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PRODUCING METHOD, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE SUBSTRATE
Patent
Atlas literature
Patent
US 10,100,426Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Assessed Ga-Na Phase 5 Diagram). When the ratio r c a of the amount of gallium [Ga] by mole relative to the total amount of gallium [Ga] and sodium …
FIGS. 2 and 5), the reaction vessel 13 is taken out from ethanol, and then is immersed 10 in the water 52 in a vessel 58 made of glass as illustrated in
FIG. 3 is presented for illustrative purposes only. The 20 composition ratios of the alloy 51 in the first embodiment will not be denied if they differ from …
FIG. 4 is a flowchart illustrating the procedure from growth of the gallium nitride crystal 5 to collection of gallium in the first embodiment. First, the seed …
FIG. 5 is a diagram illustrating a state inside the reaction vessel 13 from which residual sodium 50 has been removed. In this state, most of the alloy 51 …
FIG. 6. When the reaction vessel 13 is immersed in the water 52, the sodium 50 that remains in the reaction vessel 13 in small amounts reacts with the water …
FIG. 7 is a diagram illustrating a state in which Docket No. PRCA-16147-US,EP,CN separated gallium is being collected. Description of Embodiment [0018] First …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a gallium nitride crystal, the method comprising: (a) growing a gallium nitride crystal in a reaction vessel, by dissolving nitrogen in a mixed melt including gallium and sodium, in the reaction vessel, wherein an alloy that includes gallium and sodium forms in the reaction vessel during the growing of the gallium nitride crystal in (a); (a2) removing residual sodium remaining in the reaction vessel after (a), while leaving the gallium nitride crystal and the alloy that includes gallium and sodium, in the reaction vessel: (b) separating elemental gallium from [[an]] the alloy that includes gallium and [[the]] sodium, by reacting the alloy and a liquid that ionizes [[the]] sodium and separating the sodium as sodium ions in the liquid and the elemental gallium from the alloy; [[and]] (c) collecting the separated elemental gallium separated in (b); and (d) repeating (a) to further grow the gallium nitride crystal remaining after (a2) or to grow another gallium nitride crystal, by using the collected elemental gallium, which was collected in (c). Currently amended
The method for producing a gallium nitride crystal according to claim 1, wherein the liquid is water having a temperature higher than a melting point of gallium. Original
The method for producing a gallium nitride crystal according to claim 1, wherein the liquid is an acid. Original
The method for producing a gallium nitride crystal according to claim 1, wherein the collecting is performed when an amount of the gallium by mole relative to a total amount of the gallium and the sodium by mole in the mixed melt after the growing accounts for greater than 0% and 80% or less. Previously presented
The method for producing a gallium nitride crystal according to claim 1, wherein the collecting is performed when an amount of the gallium by mole relative to a total amount of the gallium and the sodium by mole in the mixed melt after the growing accounts for greater than 0% and 64% or less. Previously presented
The method for producing a gallium nitride crystal according to claim 1, wherein the alloy is an inte rm etallic compound composed of the gallium and the sodium. Previously presented
The method for producing a gallium nitride crystal according to- claim 1, wherein elemental gallium is collected in a liquefied state. Previously presented
The method according to- claim 1, further comprising applying heat during (a) to melt the gallium and the sodium in the reaction vessel. New
Canceled
Canceled
Materials described outside the worked examples.
gallium nitride crystal
GaN
elemental gallium
Ga
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE SINGLE CRYSTAL GROWING METHOD AND GALLIUM NITRIDE SINGLE CRYSTAL
CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PRODUCING METHOD, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE SUBSTRATE
sodium
Na
gallium-sodium alloy
water
H₂O
acid
Ga₃₉Na₂₂ intermetallic compound
Ga₃₉Na₂₂
germanium
Ge
sodium
Na
gallium-sodium alloy
water
H₂O
acid
Ga₃₉Na₂₂ intermetallic compound
Ga₃₉Na₂₂
germanium
Ge
sodium
Na
gallium-sodium alloy
water
H₂O
acid
Ga₃₉Na₂₂ intermetallic compound
Ga₃₉Na₂₂
germanium
Ge
sodium
Na
gallium-sodium alloy
water
H₂O
acid
Ga₃₉Na₂₂ intermetallic compound
Ga₃₉Na₂₂
germanium
Ge