Patent
US 9,359,210Method for Manufacturing a Graphene Layer
Chia-Hung Huang
US
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Patent
Atlas literature
Patent
US 9,359,210Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene layer includes: performing a sputtering process to form a graphite layer on a substrate; and performing a lithography process on the graphite layer for thinning the graphite layer and thereafter making the graphite layer thinned to become a graphene layer, wherein in the lithography process, the graphite layer is thinned by an ion source to make part of the graphite laver stripped from the graphite laver to make the graphite laver thinned to become the graphene laver, and wherein the voltaqe of the ion source for thinninq the graphite layer ranqes from 0.5 to 1.2 KV, the illuminatinq time for thinninq the graphite layer ranqes from 2 to 7 minutes, and the qas flow rate for thinninq the craphite laver ranqes from to 35 sccm.
The method for manufacturing a graphene layer in accordance with claim 1 further includes performing a washing step and a drying step prior to performing the sputtering process.
The method for manufacturing a graphene layer in accordance with claim 1, wherein the sputtering process is performed by a sputter having a vacuum cavity, wherein a graphite target and the substrate are disposed in the vacuum cavity, and a reactive gas is provided within the vacuum cavity to perform the sputtering process.
The method for manufacturing a graphene layer in accordance with claim 1, wherein the process temperature in the sputtering process is not larger than 250 Celsius degrees. 3
. canceled
. canceled
Materials described outside the worked examples.
graphite layer
C
reactive gas (argon, nitrogen, or acetylene)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman D band (sp3 carbon amorphous) | 1328 cm⁻¹ | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,359,210Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene layer includes: performing a sputtering process to form a graphite layer on a substrate; and performing a lithography process on the graphite layer for thinning the graphite layer and thereafter making the graphite layer thinned to become a graphene layer, wherein in the lithography process, the graphite layer is thinned by an ion source to make part of the graphite laver stripped from the graphite laver to make the graphite laver thinned to become the graphene laver, and wherein the voltaqe of the ion source for thinninq the graphite layer ranqes from 0.5 to 1.2 KV, the illuminatinq time for thinninq the graphite layer ranqes from 2 to 7 minutes, and the qas flow rate for thinninq the craphite laver ranqes from to 35 sccm.
The method for manufacturing a graphene layer in accordance with claim 1 further includes performing a washing step and a drying step prior to performing the sputtering process.
The method for manufacturing a graphene layer in accordance with claim 1, wherein the sputtering process is performed by a sputter having a vacuum cavity, wherein a graphite target and the substrate are disposed in the vacuum cavity, and a reactive gas is provided within the vacuum cavity to perform the sputtering process.
The method for manufacturing a graphene layer in accordance with claim 1, wherein the process temperature in the sputtering process is not larger than 250 Celsius degrees. 3
. canceled
. canceled
Materials described outside the worked examples.
graphite layer
C
reactive gas (argon, nitrogen, or acetylene)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman D band (sp3 carbon amorphous) | 1328 cm⁻¹ | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,359,210Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene layer includes: performing a sputtering process to form a graphite layer on a substrate; and performing a lithography process on the graphite layer for thinning the graphite layer and thereafter making the graphite layer thinned to become a graphene layer, wherein in the lithography process, the graphite layer is thinned by an ion source to make part of the graphite laver stripped from the graphite laver to make the graphite laver thinned to become the graphene laver, and wherein the voltaqe of the ion source for thinninq the graphite layer ranqes from 0.5 to 1.2 KV, the illuminatinq time for thinninq the graphite layer ranqes from 2 to 7 minutes, and the qas flow rate for thinninq the craphite laver ranqes from to 35 sccm.
The method for manufacturing a graphene layer in accordance with claim 1 further includes performing a washing step and a drying step prior to performing the sputtering process.
The method for manufacturing a graphene layer in accordance with claim 1, wherein the sputtering process is performed by a sputter having a vacuum cavity, wherein a graphite target and the substrate are disposed in the vacuum cavity, and a reactive gas is provided within the vacuum cavity to perform the sputtering process.
The method for manufacturing a graphene layer in accordance with claim 1, wherein the process temperature in the sputtering process is not larger than 250 Celsius degrees. 3
. canceled
. canceled
Materials described outside the worked examples.
graphite layer
C
reactive gas (argon, nitrogen, or acetylene)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman D band (sp3 carbon amorphous) | 1328 cm⁻¹ | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,359,210Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene layer includes: performing a sputtering process to form a graphite layer on a substrate; and performing a lithography process on the graphite layer for thinning the graphite layer and thereafter making the graphite layer thinned to become a graphene layer, wherein in the lithography process, the graphite layer is thinned by an ion source to make part of the graphite laver stripped from the graphite laver to make the graphite laver thinned to become the graphene laver, and wherein the voltaqe of the ion source for thinninq the graphite layer ranqes from 0.5 to 1.2 KV, the illuminatinq time for thinninq the graphite layer ranqes from 2 to 7 minutes, and the qas flow rate for thinninq the craphite laver ranqes from to 35 sccm.
The method for manufacturing a graphene layer in accordance with claim 1 further includes performing a washing step and a drying step prior to performing the sputtering process.
The method for manufacturing a graphene layer in accordance with claim 1, wherein the sputtering process is performed by a sputter having a vacuum cavity, wherein a graphite target and the substrate are disposed in the vacuum cavity, and a reactive gas is provided within the vacuum cavity to perform the sputtering process.
The method for manufacturing a graphene layer in accordance with claim 1, wherein the process temperature in the sputtering process is not larger than 250 Celsius degrees. 3
. canceled
. canceled
Materials described outside the worked examples.
graphite layer
C
reactive gas (argon, nitrogen, or acetylene)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman D band (sp3 carbon amorphous) | 1328 cm⁻¹ | C |
Related documents with shared materials, methods, properties, or citations.
argon gas
Ar
ultrasonic oscillation alkaline-water bath (NaOH:H₂O2:ionized water = 1:1:5)
| 1328 cm⁻¹ |
C |
Raman 2D band | 1328 cm⁻¹ | C |
interlayer spacing (TEM) | 0.34 nm | C |
Flow Rate | 5–20 sccm | — |
Duration | 0.1–5 minutes | — |
Temperature | 0.5–1.2 K | — |
Duration | 2–7 minutes | — |
Flow Rate | 20–35 sccm | — |
Pressure | 0.0001 Torr | — |
argon gas
Ar
ultrasonic oscillation alkaline-water bath (NaOH:H₂O2:ionized water = 1:1:5)
| 1328 cm⁻¹ |
C |
Raman 2D band | 1328 cm⁻¹ | C |
interlayer spacing (TEM) | 0.34 nm | C |
Flow Rate | 5–20 sccm | — |
Duration | 0.1–5 minutes | — |
Temperature | 0.5–1.2 K | — |
Duration | 2–7 minutes | — |
Flow Rate | 20–35 sccm | — |
Pressure | 0.0001 Torr | — |
argon gas
Ar
ultrasonic oscillation alkaline-water bath (NaOH:H₂O2:ionized water = 1:1:5)
| 1328 cm⁻¹ |
C |
Raman 2D band | 1328 cm⁻¹ | C |
interlayer spacing (TEM) | 0.34 nm | C |
Flow Rate | 5–20 sccm | — |
Duration | 0.1–5 minutes | — |
Temperature | 0.5–1.2 K | — |
Duration | 2–7 minutes | — |
Flow Rate | 20–35 sccm | — |
Pressure | 0.0001 Torr | — |
argon gas
Ar
ultrasonic oscillation alkaline-water bath (NaOH:H₂O2:ionized water = 1:1:5)
| 1328 cm⁻¹ |
C |
Raman 2D band | 1328 cm⁻¹ | C |
interlayer spacing (TEM) | 0.34 nm | C |
Flow Rate | 5–20 sccm | — |
Duration | 0.1–5 minutes | — |
Temperature | 0.5–1.2 K | — |
Duration | 2–7 minutes | — |
Flow Rate | 20–35 sccm | — |
Pressure | 0.0001 Torr | — |