Patent
US 9,128,377METHOD FOR FORMING GRAPHENE PATTERN
Sung-Ku Kang
US
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Patent
Atlas literature
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US 9,128,377Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1C. 20 [0019]
FIGS. 2A to 2C are process sectional views illustrating in detail a process shown 19 in
FIGS. 3A to 3C are process sectional views illustrating a method for forming a 21 graphene pattern according to another embodiment of the present invention. …
FIGS. 4A to 4D are process sectional views illustrating in detail a process shown 2 in
FIG. 5 shows a flowchart presenting the embodiment shown in FIGS. lA 4 through 3C. 5 [0022]
FIG. 6 shows a flowchart presenting another embodiment shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene pattern, comprising: 2 transferring a graphene thin film layer onto a surface of a photosensitive film; 3 transferring and attaching, to a substrate, the photosensitive film having the graphene thin 4 film layer formed on the surface thereof; and placing a mask having a predetermined pattern implemented therein above the graphene 6 thin film layer, and patterning the graphene thin film layer th r ough a photolithography process. 1
The method of claim 1, wherein the graphene thin film layer is 2 implemented by depositing carbon on a metal substrate, cooling the metal substrate having 3 the carbon deposited thereon and then removing the metal substrate. 1
(Cu rr ently Amended) The method of claim 2, wherein the graphene thin film 2 layer is implemented by mixing at least one of carbon nano tube (CNT), Ag nano-wire 3 f AgNW } and poly(3,4-ethylene di 3 oxy thiophene):poly(styrene-sulfonate) (PEDOT-PSS } 4 as another conductive material with graphene in the formation of the graphene thin film 5 layer. 1 4. The method of claim 1, wherein the photosensitive film is implemented Page 2 of 10 Po₁₂₀ 618SM PATE NT LO-201208-230-2-US O P₆₀₀₁₃ 2 as a dry photosensitive film. 1
(Cu rr ently Amended) The method of claim 1, wherein the patterning the 2 graphene thin film layer th r ough the photolithography process comprising: 3 applying light to the graphene thin film layer th r ough the mask having the 4 predetermined pattern implemented therein, a region of the graphene thin film and the 5 photosensitive film being exposed to the light, another region of the graphene thin film and 6 the photosensitive film not being exposed to the light; and 7 developing the photosensitive film to remove said another region of the graphene 8 thin film and the photosensitive film from the substrate to form a pattern of the graphene 9 thin film layer on the substrate. so that the photosensitive film corresponding to a region 10 except a region of the photosensitive film cured th r ough the exposure process, and 11 simultaneously patterning the photosensitive film and the graphene thin film layer formed 12 on an upper surface thereof. 1 8. (Cu rr ently Amended) The method of claim 7, further comprising performing an Page 3 of Po₁₂₀ 618SM PATE NT LO-201208-230-2-US O P₆₀₀₁₃ 2 ultraviolet (UV) curing process on the cured photosensitive film and the graphene thin film layer 3 corresponding thereto after the developing process is completed applying ultraviolet light to said 4 region of the graphene thin film and the photosensitive film being exposed to the light, after said 5 developing the photosensitive film. 1
The method of claim 1, wherein the photolithography process 2 comprising: 3 applying light th r ough the mask having the predetermined pattern implemented 4 therein as a first exposure process; 5 removing the mask and irradiating light onto the entire surface of the photosensitive 6 film formed on the surface of the graphene thin film layer as a second exposure process; 7 forming an oxygen inhibition layer on the upper surface of the photosensitive film 8 corresponding to a region except a region of the photosensitive film cured th r ough the first 9 exposure process; and 10 developing the photosensitive film so that the upper surface of the photosensitive 11 film corresponding to the region contacting the oxygen inhibition layer is not cured but the 12 uncured upper surface of the photosensitive film is removed, and selectively patterning 13 only a region in which the oxygen inhibition layer is formed and the graphene thin film 14 layer corresponding thereto. 1
The method of claim 4, wherein the thickness of the photosensitive film 2 is about 1 to 5 pm. 1
The method of claim 4, wherein the photosensitive film is 2 implemented as a negative-type photosensitive film. 1
Materials described outside the worked examples.
graphene thin film layer
photosensitive film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photosensitive film thickness (claimed range) | 1–5 | photosensitive film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,128,377Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1C. 20 [0019]
FIGS. 2A to 2C are process sectional views illustrating in detail a process shown 19 in
FIGS. 3A to 3C are process sectional views illustrating a method for forming a 21 graphene pattern according to another embodiment of the present invention. …
FIGS. 4A to 4D are process sectional views illustrating in detail a process shown 2 in
FIG. 5 shows a flowchart presenting the embodiment shown in FIGS. lA 4 through 3C. 5 [0022]
FIG. 6 shows a flowchart presenting another embodiment shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene pattern, comprising: 2 transferring a graphene thin film layer onto a surface of a photosensitive film; 3 transferring and attaching, to a substrate, the photosensitive film having the graphene thin 4 film layer formed on the surface thereof; and placing a mask having a predetermined pattern implemented therein above the graphene 6 thin film layer, and patterning the graphene thin film layer th r ough a photolithography process. 1
The method of claim 1, wherein the graphene thin film layer is 2 implemented by depositing carbon on a metal substrate, cooling the metal substrate having 3 the carbon deposited thereon and then removing the metal substrate. 1
(Cu rr ently Amended) The method of claim 2, wherein the graphene thin film 2 layer is implemented by mixing at least one of carbon nano tube (CNT), Ag nano-wire 3 f AgNW } and poly(3,4-ethylene di 3 oxy thiophene):poly(styrene-sulfonate) (PEDOT-PSS } 4 as another conductive material with graphene in the formation of the graphene thin film 5 layer. 1 4. The method of claim 1, wherein the photosensitive film is implemented Page 2 of 10 Po₁₂₀ 618SM PATE NT LO-201208-230-2-US O P₆₀₀₁₃ 2 as a dry photosensitive film. 1
(Cu rr ently Amended) The method of claim 1, wherein the patterning the 2 graphene thin film layer th r ough the photolithography process comprising: 3 applying light to the graphene thin film layer th r ough the mask having the 4 predetermined pattern implemented therein, a region of the graphene thin film and the 5 photosensitive film being exposed to the light, another region of the graphene thin film and 6 the photosensitive film not being exposed to the light; and 7 developing the photosensitive film to remove said another region of the graphene 8 thin film and the photosensitive film from the substrate to form a pattern of the graphene 9 thin film layer on the substrate. so that the photosensitive film corresponding to a region 10 except a region of the photosensitive film cured th r ough the exposure process, and 11 simultaneously patterning the photosensitive film and the graphene thin film layer formed 12 on an upper surface thereof. 1 8. (Cu rr ently Amended) The method of claim 7, further comprising performing an Page 3 of Po₁₂₀ 618SM PATE NT LO-201208-230-2-US O P₆₀₀₁₃ 2 ultraviolet (UV) curing process on the cured photosensitive film and the graphene thin film layer 3 corresponding thereto after the developing process is completed applying ultraviolet light to said 4 region of the graphene thin film and the photosensitive film being exposed to the light, after said 5 developing the photosensitive film. 1
The method of claim 1, wherein the photolithography process 2 comprising: 3 applying light th r ough the mask having the predetermined pattern implemented 4 therein as a first exposure process; 5 removing the mask and irradiating light onto the entire surface of the photosensitive 6 film formed on the surface of the graphene thin film layer as a second exposure process; 7 forming an oxygen inhibition layer on the upper surface of the photosensitive film 8 corresponding to a region except a region of the photosensitive film cured th r ough the first 9 exposure process; and 10 developing the photosensitive film so that the upper surface of the photosensitive 11 film corresponding to the region contacting the oxygen inhibition layer is not cured but the 12 uncured upper surface of the photosensitive film is removed, and selectively patterning 13 only a region in which the oxygen inhibition layer is formed and the graphene thin film 14 layer corresponding thereto. 1
The method of claim 4, wherein the thickness of the photosensitive film 2 is about 1 to 5 pm. 1
The method of claim 4, wherein the photosensitive film is 2 implemented as a negative-type photosensitive film. 1
Materials described outside the worked examples.
graphene thin film layer
photosensitive film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photosensitive film thickness (claimed range) | 1–5 | photosensitive film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,128,377Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1C. 20 [0019]
FIGS. 2A to 2C are process sectional views illustrating in detail a process shown 19 in
FIGS. 3A to 3C are process sectional views illustrating a method for forming a 21 graphene pattern according to another embodiment of the present invention. …
FIGS. 4A to 4D are process sectional views illustrating in detail a process shown 2 in
FIG. 5 shows a flowchart presenting the embodiment shown in FIGS. lA 4 through 3C. 5 [0022]
FIG. 6 shows a flowchart presenting another embodiment shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene pattern, comprising: 2 transferring a graphene thin film layer onto a surface of a photosensitive film; 3 transferring and attaching, to a substrate, the photosensitive film having the graphene thin 4 film layer formed on the surface thereof; and placing a mask having a predetermined pattern implemented therein above the graphene 6 thin film layer, and patterning the graphene thin film layer th r ough a photolithography process. 1
The method of claim 1, wherein the graphene thin film layer is 2 implemented by depositing carbon on a metal substrate, cooling the metal substrate having 3 the carbon deposited thereon and then removing the metal substrate. 1
(Cu rr ently Amended) The method of claim 2, wherein the graphene thin film 2 layer is implemented by mixing at least one of carbon nano tube (CNT), Ag nano-wire 3 f AgNW } and poly(3,4-ethylene di 3 oxy thiophene):poly(styrene-sulfonate) (PEDOT-PSS } 4 as another conductive material with graphene in the formation of the graphene thin film 5 layer. 1 4. The method of claim 1, wherein the photosensitive film is implemented Page 2 of 10 Po₁₂₀ 618SM PATE NT LO-201208-230-2-US O P₆₀₀₁₃ 2 as a dry photosensitive film. 1
(Cu rr ently Amended) The method of claim 1, wherein the patterning the 2 graphene thin film layer th r ough the photolithography process comprising: 3 applying light to the graphene thin film layer th r ough the mask having the 4 predetermined pattern implemented therein, a region of the graphene thin film and the 5 photosensitive film being exposed to the light, another region of the graphene thin film and 6 the photosensitive film not being exposed to the light; and 7 developing the photosensitive film to remove said another region of the graphene 8 thin film and the photosensitive film from the substrate to form a pattern of the graphene 9 thin film layer on the substrate. so that the photosensitive film corresponding to a region 10 except a region of the photosensitive film cured th r ough the exposure process, and 11 simultaneously patterning the photosensitive film and the graphene thin film layer formed 12 on an upper surface thereof. 1 8. (Cu rr ently Amended) The method of claim 7, further comprising performing an Page 3 of Po₁₂₀ 618SM PATE NT LO-201208-230-2-US O P₆₀₀₁₃ 2 ultraviolet (UV) curing process on the cured photosensitive film and the graphene thin film layer 3 corresponding thereto after the developing process is completed applying ultraviolet light to said 4 region of the graphene thin film and the photosensitive film being exposed to the light, after said 5 developing the photosensitive film. 1
The method of claim 1, wherein the photolithography process 2 comprising: 3 applying light th r ough the mask having the predetermined pattern implemented 4 therein as a first exposure process; 5 removing the mask and irradiating light onto the entire surface of the photosensitive 6 film formed on the surface of the graphene thin film layer as a second exposure process; 7 forming an oxygen inhibition layer on the upper surface of the photosensitive film 8 corresponding to a region except a region of the photosensitive film cured th r ough the first 9 exposure process; and 10 developing the photosensitive film so that the upper surface of the photosensitive 11 film corresponding to the region contacting the oxygen inhibition layer is not cured but the 12 uncured upper surface of the photosensitive film is removed, and selectively patterning 13 only a region in which the oxygen inhibition layer is formed and the graphene thin film 14 layer corresponding thereto. 1
The method of claim 4, wherein the thickness of the photosensitive film 2 is about 1 to 5 pm. 1
The method of claim 4, wherein the photosensitive film is 2 implemented as a negative-type photosensitive film. 1
Materials described outside the worked examples.
graphene thin film layer
photosensitive film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photosensitive film thickness (claimed range) | 1–5 | photosensitive film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,128,377Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1C. 20 [0019]
FIGS. 2A to 2C are process sectional views illustrating in detail a process shown 19 in
FIGS. 3A to 3C are process sectional views illustrating a method for forming a 21 graphene pattern according to another embodiment of the present invention. …
FIGS. 4A to 4D are process sectional views illustrating in detail a process shown 2 in
FIG. 5 shows a flowchart presenting the embodiment shown in FIGS. lA 4 through 3C. 5 [0022]
FIG. 6 shows a flowchart presenting another embodiment shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene pattern, comprising: 2 transferring a graphene thin film layer onto a surface of a photosensitive film; 3 transferring and attaching, to a substrate, the photosensitive film having the graphene thin 4 film layer formed on the surface thereof; and placing a mask having a predetermined pattern implemented therein above the graphene 6 thin film layer, and patterning the graphene thin film layer th r ough a photolithography process. 1
The method of claim 1, wherein the graphene thin film layer is 2 implemented by depositing carbon on a metal substrate, cooling the metal substrate having 3 the carbon deposited thereon and then removing the metal substrate. 1
(Cu rr ently Amended) The method of claim 2, wherein the graphene thin film 2 layer is implemented by mixing at least one of carbon nano tube (CNT), Ag nano-wire 3 f AgNW } and poly(3,4-ethylene di 3 oxy thiophene):poly(styrene-sulfonate) (PEDOT-PSS } 4 as another conductive material with graphene in the formation of the graphene thin film 5 layer. 1 4. The method of claim 1, wherein the photosensitive film is implemented Page 2 of 10 Po₁₂₀ 618SM PATE NT LO-201208-230-2-US O P₆₀₀₁₃ 2 as a dry photosensitive film. 1
(Cu rr ently Amended) The method of claim 1, wherein the patterning the 2 graphene thin film layer th r ough the photolithography process comprising: 3 applying light to the graphene thin film layer th r ough the mask having the 4 predetermined pattern implemented therein, a region of the graphene thin film and the 5 photosensitive film being exposed to the light, another region of the graphene thin film and 6 the photosensitive film not being exposed to the light; and 7 developing the photosensitive film to remove said another region of the graphene 8 thin film and the photosensitive film from the substrate to form a pattern of the graphene 9 thin film layer on the substrate. so that the photosensitive film corresponding to a region 10 except a region of the photosensitive film cured th r ough the exposure process, and 11 simultaneously patterning the photosensitive film and the graphene thin film layer formed 12 on an upper surface thereof. 1 8. (Cu rr ently Amended) The method of claim 7, further comprising performing an Page 3 of Po₁₂₀ 618SM PATE NT LO-201208-230-2-US O P₆₀₀₁₃ 2 ultraviolet (UV) curing process on the cured photosensitive film and the graphene thin film layer 3 corresponding thereto after the developing process is completed applying ultraviolet light to said 4 region of the graphene thin film and the photosensitive film being exposed to the light, after said 5 developing the photosensitive film. 1
The method of claim 1, wherein the photolithography process 2 comprising: 3 applying light th r ough the mask having the predetermined pattern implemented 4 therein as a first exposure process; 5 removing the mask and irradiating light onto the entire surface of the photosensitive 6 film formed on the surface of the graphene thin film layer as a second exposure process; 7 forming an oxygen inhibition layer on the upper surface of the photosensitive film 8 corresponding to a region except a region of the photosensitive film cured th r ough the first 9 exposure process; and 10 developing the photosensitive film so that the upper surface of the photosensitive 11 film corresponding to the region contacting the oxygen inhibition layer is not cured but the 12 uncured upper surface of the photosensitive film is removed, and selectively patterning 13 only a region in which the oxygen inhibition layer is formed and the graphene thin film 14 layer corresponding thereto. 1
The method of claim 4, wherein the thickness of the photosensitive film 2 is about 1 to 5 pm. 1
The method of claim 4, wherein the photosensitive film is 2 implemented as a negative-type photosensitive film. 1
Materials described outside the worked examples.
graphene thin film layer
photosensitive film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photosensitive film thickness (claimed range) | 1–5 | photosensitive film |
Related documents with shared materials, methods, properties, or citations.
carbon nanotube
Ag nanowire
AgNW
poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate)
PEDOT-PSS
nickel or copper metal substrate
glass substrate
polyimide substrate
PI
GRAPHENE AS AN ALIGNMENT LAYER AND ELECTRODE FOR LIQUID CRYSTAL DEVICES
carbon nanotube
Ag nanowire
AgNW
poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate)
PEDOT-PSS
nickel or copper metal substrate
glass substrate
polyimide substrate
PI
GRAPHENE AS AN ALIGNMENT LAYER AND ELECTRODE FOR LIQUID CRYSTAL DEVICES
carbon nanotube
Ag nanowire
AgNW
poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate)
PEDOT-PSS
nickel or copper metal substrate
glass substrate
polyimide substrate
PI
GRAPHENE AS AN ALIGNMENT LAYER AND ELECTRODE FOR LIQUID CRYSTAL DEVICES
carbon nanotube
Ag nanowire
AgNW
poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate)
PEDOT-PSS
nickel or copper metal substrate
glass substrate
polyimide substrate
PI
GRAPHENE AS AN ALIGNMENT LAYER AND ELECTRODE FOR LIQUID CRYSTAL DEVICES