Patent
US 8,663,491ION ETCHING OF GROWING InP NANOCRYSTALS USING MICROWAVE
Geoffrey F. Strouse
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,663,491Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing nanoparticles exhibiting enhanced photoluminescence quantum yield comprising the steps of: providing stock solutions of Group III- [[V]] V I elements; providing an ionic liquid containing an anion that thermally degrades to form an ion etchant, wherein the anion is BF4, PF 6, F, Cl O4, P O 4, chloride, bromide, acetate, or hydroxide; wherein the mole ratio of stock solutions of Group I I I-VI elements to ion etchant is 1:0.1, 1:1, or 1:1 0; placing the ionic liquid into a microwave reactor vessel; dissolving the stock solutions of Group III-[[V]] V I elements in a solute and injecting the resulting solution into the microwave reactor vessel; subjecting the solutions in the microwave reactor vessel to microwave irradiation, wherein the microwave irradiation degrades the anion of the ionic liquid into an etchant; where the etchant is F-, C l-, B r-, or O-; allowing the stock solutions of Group III-[[V]]VI elements to form nanoparticles, wherein the nanoparticles are etched in situ by the etchant during nanoparticle growth; and collecting the resulting nanoparticles.
The method of claim 1, wherein the microwave irradiation is ramped at 300W.
The method of claim 1, further comprising ramping the reaction between 1 minute and 25 minutes.
The method of claim 1, wherein the resulting nanoparticles are collected by using at least one compound selected from the group consisting of toluene, acetone, and methanol.
The method of claim 1, further comprising the step of cooling the reaction site after formation of the nanoparticles using forced air cooling.
The method of claim 1, wherein stock solutions of Group III- [[V]] V I elements are indium, indium palmitate, tris-trimethylsilylphosphine, gallium, nitrogen phosphorus, arsenic, or antimony; and the stock solutions of Group III-[[V]]VI elements cadmium, zin c, seleium, tellurium, sulfur, or oxygen.
The method of claim 1, wherein the nanoparticles consist of GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, A l N, A l P, A l As, A l Sb, GaN, GaP GaAs, GaSb, InN, InP, InAs, InSb, GaS, GaSe, GaTe, InS, InSe, InTe, T l S, T l Se, T l Te, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, As 2 S3, As₄S4, As₂Se3, As₂Te3, Sb₂S 3, Sb₂S e3, Sb₂Te3, Bi₂S3, Bi₂Se3, Bi₂Te3, CuO, C u20, A g 2S, CuSe, CuCl, AgBr, AuCl, NiS2, PdS, PtSe, CoSe, RhS, IrSe, FeO, FeS, FeSe, RuS, MnO, MnS, MnSe, ReS, Cr₂S3, Cr₂Se3, MoS2, VS, VSe, NbS, TiO2, TiS2, ZrS2, BeO, MgS, CaSe, or BaTi O3.
The method of claim 4, wherein the ionic liquid is used at a molar concentration ratio between 1:1 and 1:10, stock solutions of Group III-[[V]]VI elements to ionic liquid.
The method of claim 9, wherein stock solutions of Group III- [[V]]VI elements consist of indium palmitate and tris-trimethylsilylphosphine.
A method of etching nanoparticles comprising the steps of: providing stock solutions of Group III- [[V]] V I elements; 4 providing an ionic liquid containing an anion that thermally degrades to form an ion etchant, wherein the anion is BF₄ PF 6, F, C 1O 4, P O 4, chloride, bromide, acetate, or hydroxide; wherein the mole ratio of stock solutions of Group I I I-VI elements to ion etchant is 1:0.1, 1:1, or 1:1 0; placing the ionic liquid into a microwave reactor vessel; dissolving the stock solutions of Group III-[[V]] V I elements in a solute and injecting the resulting solution into the microwave reactor vessel; subjecting the solutions in the microwave reactor vessel to microwave irradiation, wherein the microwave irradiation degrades the anion of the ionic liquid into an etchant; where the etchant is F-, C l-, B r-, or O-; allowing the stock solutions of Group III- [[V]]VI elements to form nanoparticles, wherein the nanoparticles are etched in situ by the etchant; and collecting the resulting nanoparticles.
The method of claim 11, wherein the microwave irradiation is ramped at 300W.
The method of claim 11, further comprising ramping the reaction between 1 minute and 25 minutes.
The method of claim 11, wherein the ionic liquid comprises 1-hexyl-3-methyl- imidazolium, 1-butyl-4-methyl-pyridinium, tetrabutylammonium, or their derivatives.
The method of claim 11, wherein the ionic liquid is used at a molar concentration ratio between 1:1 and 1:10, stock solutions of Group III-[[V]]VI elements to ionic liquid.
The method of claim 11, further comprising the step of cooling the reaction site after reaction completion using forced air cooling.
The method of claim 11, wherein stock solutions of Group III- [[V]]VI elements are compounds selected from the group consisting of indium, gallium, nitrogen phosphorus, arsenic, indium palmitate, tris-trimethylsilylphosphine, and antimony; and wherein the stock solutions of Group III-[[V]]VI elements are cadmium, zin c, seleium, tellurium, sulfur, or oxygen.
The method of claim 11, wherein the nanoparticles consist of GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, A l N, A l P, A l As, AlSb, GaN, GaP GaAs, GaSb, InN, InP, InAs, InSb, GaS, GaSe, GaTe, InS, InSe, InTe, T l S, T l Se, T l Te, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, As 2 S3, As₄S4, As₂Se3, As₂Te3, Sb₂S3, Sb₂S e3, Sb₂Te3, Bi₂S3, Bi₂Se3, Bi₂Te3, Cu O, C u20, A g 2S, CuSe, CuC l, AgBr, AuC l, NiS2, PdS, PtSe, CoSe, RhS, IrSe, Fe O, FeS, FeSe, RuS, MnO, MnS, MnSe, ReS, Cr₂S3, Cr₂Se3, MoS2, VS, VSe, NbS, TiO2, TiS2, ZrS2, Be O, MgS, CaSe, or BaTi O3.
Materials described outside the worked examples.
Group III-VI semiconductor nanoparticles
ionic liquid containing thermally degradable anion
ion etchant
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
InP PL QY as-isolated (prior art baseline) | 4 | InP |
InP PL QY after post-synthesis HF etching (prior art) | 40 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,663,491Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing nanoparticles exhibiting enhanced photoluminescence quantum yield comprising the steps of: providing stock solutions of Group III- [[V]] V I elements; providing an ionic liquid containing an anion that thermally degrades to form an ion etchant, wherein the anion is BF4, PF 6, F, Cl O4, P O 4, chloride, bromide, acetate, or hydroxide; wherein the mole ratio of stock solutions of Group I I I-VI elements to ion etchant is 1:0.1, 1:1, or 1:1 0; placing the ionic liquid into a microwave reactor vessel; dissolving the stock solutions of Group III-[[V]] V I elements in a solute and injecting the resulting solution into the microwave reactor vessel; subjecting the solutions in the microwave reactor vessel to microwave irradiation, wherein the microwave irradiation degrades the anion of the ionic liquid into an etchant; where the etchant is F-, C l-, B r-, or O-; allowing the stock solutions of Group III-[[V]]VI elements to form nanoparticles, wherein the nanoparticles are etched in situ by the etchant during nanoparticle growth; and collecting the resulting nanoparticles.
The method of claim 1, wherein the microwave irradiation is ramped at 300W.
The method of claim 1, further comprising ramping the reaction between 1 minute and 25 minutes.
The method of claim 1, wherein the resulting nanoparticles are collected by using at least one compound selected from the group consisting of toluene, acetone, and methanol.
The method of claim 1, further comprising the step of cooling the reaction site after formation of the nanoparticles using forced air cooling.
The method of claim 1, wherein stock solutions of Group III- [[V]] V I elements are indium, indium palmitate, tris-trimethylsilylphosphine, gallium, nitrogen phosphorus, arsenic, or antimony; and the stock solutions of Group III-[[V]]VI elements cadmium, zin c, seleium, tellurium, sulfur, or oxygen.
The method of claim 1, wherein the nanoparticles consist of GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, A l N, A l P, A l As, A l Sb, GaN, GaP GaAs, GaSb, InN, InP, InAs, InSb, GaS, GaSe, GaTe, InS, InSe, InTe, T l S, T l Se, T l Te, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, As 2 S3, As₄S4, As₂Se3, As₂Te3, Sb₂S 3, Sb₂S e3, Sb₂Te3, Bi₂S3, Bi₂Se3, Bi₂Te3, CuO, C u20, A g 2S, CuSe, CuCl, AgBr, AuCl, NiS2, PdS, PtSe, CoSe, RhS, IrSe, FeO, FeS, FeSe, RuS, MnO, MnS, MnSe, ReS, Cr₂S3, Cr₂Se3, MoS2, VS, VSe, NbS, TiO2, TiS2, ZrS2, BeO, MgS, CaSe, or BaTi O3.
The method of claim 4, wherein the ionic liquid is used at a molar concentration ratio between 1:1 and 1:10, stock solutions of Group III-[[V]]VI elements to ionic liquid.
The method of claim 9, wherein stock solutions of Group III- [[V]]VI elements consist of indium palmitate and tris-trimethylsilylphosphine.
A method of etching nanoparticles comprising the steps of: providing stock solutions of Group III- [[V]] V I elements; 4 providing an ionic liquid containing an anion that thermally degrades to form an ion etchant, wherein the anion is BF₄ PF 6, F, C 1O 4, P O 4, chloride, bromide, acetate, or hydroxide; wherein the mole ratio of stock solutions of Group I I I-VI elements to ion etchant is 1:0.1, 1:1, or 1:1 0; placing the ionic liquid into a microwave reactor vessel; dissolving the stock solutions of Group III-[[V]] V I elements in a solute and injecting the resulting solution into the microwave reactor vessel; subjecting the solutions in the microwave reactor vessel to microwave irradiation, wherein the microwave irradiation degrades the anion of the ionic liquid into an etchant; where the etchant is F-, C l-, B r-, or O-; allowing the stock solutions of Group III- [[V]]VI elements to form nanoparticles, wherein the nanoparticles are etched in situ by the etchant; and collecting the resulting nanoparticles.
The method of claim 11, wherein the microwave irradiation is ramped at 300W.
The method of claim 11, further comprising ramping the reaction between 1 minute and 25 minutes.
The method of claim 11, wherein the ionic liquid comprises 1-hexyl-3-methyl- imidazolium, 1-butyl-4-methyl-pyridinium, tetrabutylammonium, or their derivatives.
The method of claim 11, wherein the ionic liquid is used at a molar concentration ratio between 1:1 and 1:10, stock solutions of Group III-[[V]]VI elements to ionic liquid.
The method of claim 11, further comprising the step of cooling the reaction site after reaction completion using forced air cooling.
The method of claim 11, wherein stock solutions of Group III- [[V]]VI elements are compounds selected from the group consisting of indium, gallium, nitrogen phosphorus, arsenic, indium palmitate, tris-trimethylsilylphosphine, and antimony; and wherein the stock solutions of Group III-[[V]]VI elements are cadmium, zin c, seleium, tellurium, sulfur, or oxygen.
The method of claim 11, wherein the nanoparticles consist of GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, A l N, A l P, A l As, AlSb, GaN, GaP GaAs, GaSb, InN, InP, InAs, InSb, GaS, GaSe, GaTe, InS, InSe, InTe, T l S, T l Se, T l Te, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, As 2 S3, As₄S4, As₂Se3, As₂Te3, Sb₂S3, Sb₂S e3, Sb₂Te3, Bi₂S3, Bi₂Se3, Bi₂Te3, Cu O, C u20, A g 2S, CuSe, CuC l, AgBr, AuC l, NiS2, PdS, PtSe, CoSe, RhS, IrSe, Fe O, FeS, FeSe, RuS, MnO, MnS, MnSe, ReS, Cr₂S3, Cr₂Se3, MoS2, VS, VSe, NbS, TiO2, TiS2, ZrS2, Be O, MgS, CaSe, or BaTi O3.
Materials described outside the worked examples.
Group III-VI semiconductor nanoparticles
ionic liquid containing thermally degradable anion
ion etchant
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
InP PL QY as-isolated (prior art baseline) | 4 | InP |
InP PL QY after post-synthesis HF etching (prior art) | 40 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,663,491Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing nanoparticles exhibiting enhanced photoluminescence quantum yield comprising the steps of: providing stock solutions of Group III- [[V]] V I elements; providing an ionic liquid containing an anion that thermally degrades to form an ion etchant, wherein the anion is BF4, PF 6, F, Cl O4, P O 4, chloride, bromide, acetate, or hydroxide; wherein the mole ratio of stock solutions of Group I I I-VI elements to ion etchant is 1:0.1, 1:1, or 1:1 0; placing the ionic liquid into a microwave reactor vessel; dissolving the stock solutions of Group III-[[V]] V I elements in a solute and injecting the resulting solution into the microwave reactor vessel; subjecting the solutions in the microwave reactor vessel to microwave irradiation, wherein the microwave irradiation degrades the anion of the ionic liquid into an etchant; where the etchant is F-, C l-, B r-, or O-; allowing the stock solutions of Group III-[[V]]VI elements to form nanoparticles, wherein the nanoparticles are etched in situ by the etchant during nanoparticle growth; and collecting the resulting nanoparticles.
The method of claim 1, wherein the microwave irradiation is ramped at 300W.
The method of claim 1, further comprising ramping the reaction between 1 minute and 25 minutes.
The method of claim 1, wherein the resulting nanoparticles are collected by using at least one compound selected from the group consisting of toluene, acetone, and methanol.
The method of claim 1, further comprising the step of cooling the reaction site after formation of the nanoparticles using forced air cooling.
The method of claim 1, wherein stock solutions of Group III- [[V]] V I elements are indium, indium palmitate, tris-trimethylsilylphosphine, gallium, nitrogen phosphorus, arsenic, or antimony; and the stock solutions of Group III-[[V]]VI elements cadmium, zin c, seleium, tellurium, sulfur, or oxygen.
The method of claim 1, wherein the nanoparticles consist of GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, A l N, A l P, A l As, A l Sb, GaN, GaP GaAs, GaSb, InN, InP, InAs, InSb, GaS, GaSe, GaTe, InS, InSe, InTe, T l S, T l Se, T l Te, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, As 2 S3, As₄S4, As₂Se3, As₂Te3, Sb₂S 3, Sb₂S e3, Sb₂Te3, Bi₂S3, Bi₂Se3, Bi₂Te3, CuO, C u20, A g 2S, CuSe, CuCl, AgBr, AuCl, NiS2, PdS, PtSe, CoSe, RhS, IrSe, FeO, FeS, FeSe, RuS, MnO, MnS, MnSe, ReS, Cr₂S3, Cr₂Se3, MoS2, VS, VSe, NbS, TiO2, TiS2, ZrS2, BeO, MgS, CaSe, or BaTi O3.
The method of claim 4, wherein the ionic liquid is used at a molar concentration ratio between 1:1 and 1:10, stock solutions of Group III-[[V]]VI elements to ionic liquid.
The method of claim 9, wherein stock solutions of Group III- [[V]]VI elements consist of indium palmitate and tris-trimethylsilylphosphine.
A method of etching nanoparticles comprising the steps of: providing stock solutions of Group III- [[V]] V I elements; 4 providing an ionic liquid containing an anion that thermally degrades to form an ion etchant, wherein the anion is BF₄ PF 6, F, C 1O 4, P O 4, chloride, bromide, acetate, or hydroxide; wherein the mole ratio of stock solutions of Group I I I-VI elements to ion etchant is 1:0.1, 1:1, or 1:1 0; placing the ionic liquid into a microwave reactor vessel; dissolving the stock solutions of Group III-[[V]] V I elements in a solute and injecting the resulting solution into the microwave reactor vessel; subjecting the solutions in the microwave reactor vessel to microwave irradiation, wherein the microwave irradiation degrades the anion of the ionic liquid into an etchant; where the etchant is F-, C l-, B r-, or O-; allowing the stock solutions of Group III- [[V]]VI elements to form nanoparticles, wherein the nanoparticles are etched in situ by the etchant; and collecting the resulting nanoparticles.
The method of claim 11, wherein the microwave irradiation is ramped at 300W.
The method of claim 11, further comprising ramping the reaction between 1 minute and 25 minutes.
The method of claim 11, wherein the ionic liquid comprises 1-hexyl-3-methyl- imidazolium, 1-butyl-4-methyl-pyridinium, tetrabutylammonium, or their derivatives.
The method of claim 11, wherein the ionic liquid is used at a molar concentration ratio between 1:1 and 1:10, stock solutions of Group III-[[V]]VI elements to ionic liquid.
The method of claim 11, further comprising the step of cooling the reaction site after reaction completion using forced air cooling.
The method of claim 11, wherein stock solutions of Group III- [[V]]VI elements are compounds selected from the group consisting of indium, gallium, nitrogen phosphorus, arsenic, indium palmitate, tris-trimethylsilylphosphine, and antimony; and wherein the stock solutions of Group III-[[V]]VI elements are cadmium, zin c, seleium, tellurium, sulfur, or oxygen.
The method of claim 11, wherein the nanoparticles consist of GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, A l N, A l P, A l As, AlSb, GaN, GaP GaAs, GaSb, InN, InP, InAs, InSb, GaS, GaSe, GaTe, InS, InSe, InTe, T l S, T l Se, T l Te, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, As 2 S3, As₄S4, As₂Se3, As₂Te3, Sb₂S3, Sb₂S e3, Sb₂Te3, Bi₂S3, Bi₂Se3, Bi₂Te3, Cu O, C u20, A g 2S, CuSe, CuC l, AgBr, AuC l, NiS2, PdS, PtSe, CoSe, RhS, IrSe, Fe O, FeS, FeSe, RuS, MnO, MnS, MnSe, ReS, Cr₂S3, Cr₂Se3, MoS2, VS, VSe, NbS, TiO2, TiS2, ZrS2, Be O, MgS, CaSe, or BaTi O3.
Materials described outside the worked examples.
Group III-VI semiconductor nanoparticles
ionic liquid containing thermally degradable anion
ion etchant
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
InP PL QY as-isolated (prior art baseline) | 4 | InP |
InP PL QY after post-synthesis HF etching (prior art) | 40 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,663,491Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing nanoparticles exhibiting enhanced photoluminescence quantum yield comprising the steps of: providing stock solutions of Group III- [[V]] V I elements; providing an ionic liquid containing an anion that thermally degrades to form an ion etchant, wherein the anion is BF4, PF 6, F, Cl O4, P O 4, chloride, bromide, acetate, or hydroxide; wherein the mole ratio of stock solutions of Group I I I-VI elements to ion etchant is 1:0.1, 1:1, or 1:1 0; placing the ionic liquid into a microwave reactor vessel; dissolving the stock solutions of Group III-[[V]] V I elements in a solute and injecting the resulting solution into the microwave reactor vessel; subjecting the solutions in the microwave reactor vessel to microwave irradiation, wherein the microwave irradiation degrades the anion of the ionic liquid into an etchant; where the etchant is F-, C l-, B r-, or O-; allowing the stock solutions of Group III-[[V]]VI elements to form nanoparticles, wherein the nanoparticles are etched in situ by the etchant during nanoparticle growth; and collecting the resulting nanoparticles.
The method of claim 1, wherein the microwave irradiation is ramped at 300W.
The method of claim 1, further comprising ramping the reaction between 1 minute and 25 minutes.
The method of claim 1, wherein the resulting nanoparticles are collected by using at least one compound selected from the group consisting of toluene, acetone, and methanol.
The method of claim 1, further comprising the step of cooling the reaction site after formation of the nanoparticles using forced air cooling.
The method of claim 1, wherein stock solutions of Group III- [[V]] V I elements are indium, indium palmitate, tris-trimethylsilylphosphine, gallium, nitrogen phosphorus, arsenic, or antimony; and the stock solutions of Group III-[[V]]VI elements cadmium, zin c, seleium, tellurium, sulfur, or oxygen.
The method of claim 1, wherein the nanoparticles consist of GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, A l N, A l P, A l As, A l Sb, GaN, GaP GaAs, GaSb, InN, InP, InAs, InSb, GaS, GaSe, GaTe, InS, InSe, InTe, T l S, T l Se, T l Te, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, As 2 S3, As₄S4, As₂Se3, As₂Te3, Sb₂S 3, Sb₂S e3, Sb₂Te3, Bi₂S3, Bi₂Se3, Bi₂Te3, CuO, C u20, A g 2S, CuSe, CuCl, AgBr, AuCl, NiS2, PdS, PtSe, CoSe, RhS, IrSe, FeO, FeS, FeSe, RuS, MnO, MnS, MnSe, ReS, Cr₂S3, Cr₂Se3, MoS2, VS, VSe, NbS, TiO2, TiS2, ZrS2, BeO, MgS, CaSe, or BaTi O3.
The method of claim 4, wherein the ionic liquid is used at a molar concentration ratio between 1:1 and 1:10, stock solutions of Group III-[[V]]VI elements to ionic liquid.
The method of claim 9, wherein stock solutions of Group III- [[V]]VI elements consist of indium palmitate and tris-trimethylsilylphosphine.
A method of etching nanoparticles comprising the steps of: providing stock solutions of Group III- [[V]] V I elements; 4 providing an ionic liquid containing an anion that thermally degrades to form an ion etchant, wherein the anion is BF₄ PF 6, F, C 1O 4, P O 4, chloride, bromide, acetate, or hydroxide; wherein the mole ratio of stock solutions of Group I I I-VI elements to ion etchant is 1:0.1, 1:1, or 1:1 0; placing the ionic liquid into a microwave reactor vessel; dissolving the stock solutions of Group III-[[V]] V I elements in a solute and injecting the resulting solution into the microwave reactor vessel; subjecting the solutions in the microwave reactor vessel to microwave irradiation, wherein the microwave irradiation degrades the anion of the ionic liquid into an etchant; where the etchant is F-, C l-, B r-, or O-; allowing the stock solutions of Group III- [[V]]VI elements to form nanoparticles, wherein the nanoparticles are etched in situ by the etchant; and collecting the resulting nanoparticles.
The method of claim 11, wherein the microwave irradiation is ramped at 300W.
The method of claim 11, further comprising ramping the reaction between 1 minute and 25 minutes.
The method of claim 11, wherein the ionic liquid comprises 1-hexyl-3-methyl- imidazolium, 1-butyl-4-methyl-pyridinium, tetrabutylammonium, or their derivatives.
The method of claim 11, wherein the ionic liquid is used at a molar concentration ratio between 1:1 and 1:10, stock solutions of Group III-[[V]]VI elements to ionic liquid.
The method of claim 11, further comprising the step of cooling the reaction site after reaction completion using forced air cooling.
The method of claim 11, wherein stock solutions of Group III- [[V]]VI elements are compounds selected from the group consisting of indium, gallium, nitrogen phosphorus, arsenic, indium palmitate, tris-trimethylsilylphosphine, and antimony; and wherein the stock solutions of Group III-[[V]]VI elements are cadmium, zin c, seleium, tellurium, sulfur, or oxygen.
The method of claim 11, wherein the nanoparticles consist of GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, A l N, A l P, A l As, AlSb, GaN, GaP GaAs, GaSb, InN, InP, InAs, InSb, GaS, GaSe, GaTe, InS, InSe, InTe, T l S, T l Se, T l Te, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, As 2 S3, As₄S4, As₂Se3, As₂Te3, Sb₂S3, Sb₂S e3, Sb₂Te3, Bi₂S3, Bi₂Se3, Bi₂Te3, Cu O, C u20, A g 2S, CuSe, CuC l, AgBr, AuC l, NiS2, PdS, PtSe, CoSe, RhS, IrSe, Fe O, FeS, FeSe, RuS, MnO, MnS, MnSe, ReS, Cr₂S3, Cr₂Se3, MoS2, VS, VSe, NbS, TiO2, TiS2, ZrS2, Be O, MgS, CaSe, or BaTi O3.
Materials described outside the worked examples.
Group III-VI semiconductor nanoparticles
ionic liquid containing thermally degradable anion
ion etchant
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
InP PL QY as-isolated (prior art baseline) | 4 | InP |
InP PL QY after post-synthesis HF etching (prior art) | 40 |
Related documents with shared materials, methods, properties, or citations.
toluene, acetone, or methanol
indium palmitate
tris-trimethylsilylphosphine
Group III-VI precursor elements (indium, gallium, nitrogen, phosphorus, arsenic, antimony, cadmium, zinc, selenium, tellurium, sulfur, oxygen)
semiconductor nanoparticles (claimed composition list)
ionic liquid cation: 1-hexyl-3-methylimidazolium, 1-butyl-4-methylpyridinium, or tetrabutylammonium
InP nanocrystals
InP
CdSe nanocrystals
CdSe
InP core-shell PL QY (prior art) | 20 | InP |
InP PL QY after HF treatment following ionic liquid MW synthesis (prior art, own group) | 38 | InP |
Duration | 1–25 minutes | — |
toluene, acetone, or methanol
indium palmitate
tris-trimethylsilylphosphine
Group III-VI precursor elements (indium, gallium, nitrogen, phosphorus, arsenic, antimony, cadmium, zinc, selenium, tellurium, sulfur, oxygen)
semiconductor nanoparticles (claimed composition list)
ionic liquid cation: 1-hexyl-3-methylimidazolium, 1-butyl-4-methylpyridinium, or tetrabutylammonium
InP nanocrystals
InP
CdSe nanocrystals
CdSe
InP core-shell PL QY (prior art) | 20 | InP |
InP PL QY after HF treatment following ionic liquid MW synthesis (prior art, own group) | 38 | InP |
Duration | 1–25 minutes | — |
toluene, acetone, or methanol
indium palmitate
tris-trimethylsilylphosphine
Group III-VI precursor elements (indium, gallium, nitrogen, phosphorus, arsenic, antimony, cadmium, zinc, selenium, tellurium, sulfur, oxygen)
semiconductor nanoparticles (claimed composition list)
ionic liquid cation: 1-hexyl-3-methylimidazolium, 1-butyl-4-methylpyridinium, or tetrabutylammonium
InP nanocrystals
InP
CdSe nanocrystals
CdSe
InP core-shell PL QY (prior art) | 20 | InP |
InP PL QY after HF treatment following ionic liquid MW synthesis (prior art, own group) | 38 | InP |
Duration | 1–25 minutes | — |
toluene, acetone, or methanol
indium palmitate
tris-trimethylsilylphosphine
Group III-VI precursor elements (indium, gallium, nitrogen, phosphorus, arsenic, antimony, cadmium, zinc, selenium, tellurium, sulfur, oxygen)
semiconductor nanoparticles (claimed composition list)
ionic liquid cation: 1-hexyl-3-methylimidazolium, 1-butyl-4-methylpyridinium, or tetrabutylammonium
InP nanocrystals
InP
CdSe nanocrystals
CdSe
InP core-shell PL QY (prior art) | 20 | InP |
InP PL QY after HF treatment following ionic liquid MW synthesis (prior art, own group) | 38 | InP |
Duration | 1–25 minutes | — |