Patent
US 10,153,609GaN PUMPED RUBY LASER
William F. Krupke
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,153,609Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a drawing of the first ruby laser by Maiman. [0016]
FIG. 2 shows the spectral absorption coefficient and cross section of ruby crystal, and the spectral absorption peaks of the ~ 405 nm and ~ 560 nm pump bands. …
FIG. 3 is a block diagram of a prior art continuous wave ruby laser, pumped with a frequency doubled, near infrared laser diode pump neodymium solid state …
FIG. 4 is a block diagrams of a ruby laser directly pumped by a high bandgap GaN semiconductor laser diode. [0019]
FIG. 5 shows an optical configuration of a CW or QCW ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 6 shows an optical configuration of a Q-switched ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 7 is a block diagram of a source of pulsed DUV radiation at a wavelength of 347 nm produced by second harmonic nonlinear conversion of a ruby laser that …
FIG. 8 shows the measured continuous wave, CW, output power versus continuous wave pump power, of a ruby laser directly pumped by a high bandgap GaN laser …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
3, The apparatus of claim wherein said electromagnetic radiation comprises con ti nuo ui s wave radiation, SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.10.1417.1693.1445.1730.svg 0.123 0.093 Chemistry Black and white Original
4, The apparatus of claim wherein said e lectroma g netic radiation comp ri ses QCW pulsed radiation. SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.12.1417.2039.1445.2075.svg 0.12 0.093 Chemistry Black and white Original
74. (Ca nce led) Original) I he apparatus of claim 4, further com pri sing a Q-sw itch operatively located within said op tic al cavity. SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.2.2.677.657.755.700.svg 0.143 0.26 Chemistry Black and white Canceled
The apparat u s of cla im wherein said electromagnetic radiation comprises a wavelength of ~~4O₅ nm, SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.14.1417.2384.1445.2419.svg 0.117 0.093 Chemistry Black and white Original
(Orig lin al) The apparatus of claim 1, wherein said electromagnetic radiation comprises a wavelen g th of ~530 un, -2~
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A ruby laser was constructed using a Nichia NDV₄B₁₆ laser diode emitting 300 mW at ~405 nm in a single spatial mode. Ruby crystal was a 5 mm thick rectangular parallelepiped doped with 0.05% Cr₂O3. Cavity mirror 42 was flat with high transmission at 405 nm and high reflectivity at 694 nm; mirror 43 was a concave mirror with 50 mm radius of curvature forming a hemispherical cavity. Output coupler reflectivity was 95%. Output quantum slope efficiency was 27%, power slope efficiency 15%, and optical-optical power conversion efficiency >10% at 694 nm output.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-pumped ruby laser (DPSSL)
Q-switched GaN-pumped ruby laser
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 shows the spectral absorption coefficient and cross section of ruby crystal, and the spectral absorption peaks of the ~ 405 nm and ~ 560 nm pump bands. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ruby laser output wavelength | 694 nm | Cr₃+:Al₂O₃ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,153,609Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a drawing of the first ruby laser by Maiman. [0016]
FIG. 2 shows the spectral absorption coefficient and cross section of ruby crystal, and the spectral absorption peaks of the ~ 405 nm and ~ 560 nm pump bands. …
FIG. 3 is a block diagram of a prior art continuous wave ruby laser, pumped with a frequency doubled, near infrared laser diode pump neodymium solid state …
FIG. 4 is a block diagrams of a ruby laser directly pumped by a high bandgap GaN semiconductor laser diode. [0019]
FIG. 5 shows an optical configuration of a CW or QCW ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 6 shows an optical configuration of a Q-switched ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 7 is a block diagram of a source of pulsed DUV radiation at a wavelength of 347 nm produced by second harmonic nonlinear conversion of a ruby laser that …
FIG. 8 shows the measured continuous wave, CW, output power versus continuous wave pump power, of a ruby laser directly pumped by a high bandgap GaN laser …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
3, The apparatus of claim wherein said electromagnetic radiation comprises con ti nuo ui s wave radiation, SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.10.1417.1693.1445.1730.svg 0.123 0.093 Chemistry Black and white Original
4, The apparatus of claim wherein said e lectroma g netic radiation comp ri ses QCW pulsed radiation. SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.12.1417.2039.1445.2075.svg 0.12 0.093 Chemistry Black and white Original
74. (Ca nce led) Original) I he apparatus of claim 4, further com pri sing a Q-sw itch operatively located within said op tic al cavity. SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.2.2.677.657.755.700.svg 0.143 0.26 Chemistry Black and white Canceled
The apparat u s of cla im wherein said electromagnetic radiation comprises a wavelength of ~~4O₅ nm, SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.14.1417.2384.1445.2419.svg 0.117 0.093 Chemistry Black and white Original
(Orig lin al) The apparatus of claim 1, wherein said electromagnetic radiation comprises a wavelen g th of ~530 un, -2~
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A ruby laser was constructed using a Nichia NDV₄B₁₆ laser diode emitting 300 mW at ~405 nm in a single spatial mode. Ruby crystal was a 5 mm thick rectangular parallelepiped doped with 0.05% Cr₂O3. Cavity mirror 42 was flat with high transmission at 405 nm and high reflectivity at 694 nm; mirror 43 was a concave mirror with 50 mm radius of curvature forming a hemispherical cavity. Output coupler reflectivity was 95%. Output quantum slope efficiency was 27%, power slope efficiency 15%, and optical-optical power conversion efficiency >10% at 694 nm output.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-pumped ruby laser (DPSSL)
Q-switched GaN-pumped ruby laser
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 shows the spectral absorption coefficient and cross section of ruby crystal, and the spectral absorption peaks of the ~ 405 nm and ~ 560 nm pump bands. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ruby laser output wavelength | 694 nm | Cr₃+:Al₂O₃ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,153,609Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a drawing of the first ruby laser by Maiman. [0016]
FIG. 2 shows the spectral absorption coefficient and cross section of ruby crystal, and the spectral absorption peaks of the ~ 405 nm and ~ 560 nm pump bands. …
FIG. 3 is a block diagram of a prior art continuous wave ruby laser, pumped with a frequency doubled, near infrared laser diode pump neodymium solid state …
FIG. 4 is a block diagrams of a ruby laser directly pumped by a high bandgap GaN semiconductor laser diode. [0019]
FIG. 5 shows an optical configuration of a CW or QCW ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 6 shows an optical configuration of a Q-switched ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 7 is a block diagram of a source of pulsed DUV radiation at a wavelength of 347 nm produced by second harmonic nonlinear conversion of a ruby laser that …
FIG. 8 shows the measured continuous wave, CW, output power versus continuous wave pump power, of a ruby laser directly pumped by a high bandgap GaN laser …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
3, The apparatus of claim wherein said electromagnetic radiation comprises con ti nuo ui s wave radiation, SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.10.1417.1693.1445.1730.svg 0.123 0.093 Chemistry Black and white Original
4, The apparatus of claim wherein said e lectroma g netic radiation comp ri ses QCW pulsed radiation. SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.12.1417.2039.1445.2075.svg 0.12 0.093 Chemistry Black and white Original
74. (Ca nce led) Original) I he apparatus of claim 4, further com pri sing a Q-sw itch operatively located within said op tic al cavity. SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.2.2.677.657.755.700.svg 0.143 0.26 Chemistry Black and white Canceled
The apparat u s of cla im wherein said electromagnetic radiation comprises a wavelength of ~~4O₅ nm, SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.14.1417.2384.1445.2419.svg 0.117 0.093 Chemistry Black and white Original
(Orig lin al) The apparatus of claim 1, wherein said electromagnetic radiation comprises a wavelen g th of ~530 un, -2~
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A ruby laser was constructed using a Nichia NDV₄B₁₆ laser diode emitting 300 mW at ~405 nm in a single spatial mode. Ruby crystal was a 5 mm thick rectangular parallelepiped doped with 0.05% Cr₂O3. Cavity mirror 42 was flat with high transmission at 405 nm and high reflectivity at 694 nm; mirror 43 was a concave mirror with 50 mm radius of curvature forming a hemispherical cavity. Output coupler reflectivity was 95%. Output quantum slope efficiency was 27%, power slope efficiency 15%, and optical-optical power conversion efficiency >10% at 694 nm output.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-pumped ruby laser (DPSSL)
Q-switched GaN-pumped ruby laser
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 shows the spectral absorption coefficient and cross section of ruby crystal, and the spectral absorption peaks of the ~ 405 nm and ~ 560 nm pump bands. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ruby laser output wavelength | 694 nm | Cr₃+:Al₂O₃ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,153,609Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a drawing of the first ruby laser by Maiman. [0016]
FIG. 2 shows the spectral absorption coefficient and cross section of ruby crystal, and the spectral absorption peaks of the ~ 405 nm and ~ 560 nm pump bands. …
FIG. 3 is a block diagram of a prior art continuous wave ruby laser, pumped with a frequency doubled, near infrared laser diode pump neodymium solid state …
FIG. 4 is a block diagrams of a ruby laser directly pumped by a high bandgap GaN semiconductor laser diode. [0019]
FIG. 5 shows an optical configuration of a CW or QCW ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 6 shows an optical configuration of a Q-switched ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 7 is a block diagram of a source of pulsed DUV radiation at a wavelength of 347 nm produced by second harmonic nonlinear conversion of a ruby laser that …
FIG. 8 shows the measured continuous wave, CW, output power versus continuous wave pump power, of a ruby laser directly pumped by a high bandgap GaN laser …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
3, The apparatus of claim wherein said electromagnetic radiation comprises con ti nuo ui s wave radiation, SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.10.1417.1693.1445.1730.svg 0.123 0.093 Chemistry Black and white Original
4, The apparatus of claim wherein said e lectroma g netic radiation comp ri ses QCW pulsed radiation. SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.12.1417.2039.1445.2075.svg 0.12 0.093 Chemistry Black and white Original
74. (Ca nce led) Original) I he apparatus of claim 4, further com pri sing a Q-sw itch operatively located within said op tic al cavity. SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.2.2.677.657.755.700.svg 0.143 0.26 Chemistry Black and white Canceled
The apparat u s of cla im wherein said electromagnetic radiation comprises a wavelength of ~~4O₅ nm, SVG 15664883.06-21-2018.JIU₅₇₂RKPXXIFW1.CLM.1.14.1417.2384.1445.2419.svg 0.117 0.093 Chemistry Black and white Original
(Orig lin al) The apparatus of claim 1, wherein said electromagnetic radiation comprises a wavelen g th of ~530 un, -2~
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A ruby laser was constructed using a Nichia NDV₄B₁₆ laser diode emitting 300 mW at ~405 nm in a single spatial mode. Ruby crystal was a 5 mm thick rectangular parallelepiped doped with 0.05% Cr₂O3. Cavity mirror 42 was flat with high transmission at 405 nm and high reflectivity at 694 nm; mirror 43 was a concave mirror with 50 mm radius of curvature forming a hemispherical cavity. Output coupler reflectivity was 95%. Output quantum slope efficiency was 27%, power slope efficiency 15%, and optical-optical power conversion efficiency >10% at 694 nm output.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-pumped ruby laser (DPSSL)
Q-switched GaN-pumped ruby laser
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 shows the spectral absorption coefficient and cross section of ruby crystal, and the spectral absorption peaks of the ~ 405 nm and ~ 560 nm pump bands. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ruby laser output wavelength | 694 nm | Cr₃+:Al₂O₃ |
Related documents with shared materials, methods, properties, or citations.
FIG. 3 is a block diagram of a prior art continuous wave ruby laser, pumped with a frequency doubled, near infrared laser diode pump neodymium solid state …
FIG. 4 is a block diagrams of a ruby laser directly pumped by a high bandgap GaN semiconductor laser diode. [0019]
FIG. 5 shows an optical configuration of a CW or QCW ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 6 shows an optical configuration of a Q-switched ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 7 is a block diagram of a source of pulsed DUV radiation at a wavelength of 347 nm produced by second harmonic nonlinear conversion of a ruby laser that …
FIG. 8 shows the measured continuous wave, CW, output power versus continuous wave pump power, of a ruby laser directly pumped by a high bandgap GaN laser …
| 27 % |
Cr₃+:Al₂O₃ |
power slope efficiency | 15 % | Cr₃+:Al₂O₃ |
optical-optical power conversion efficiency | ≥ 10 % | Cr₃+:Al₂O₃ |
ruby energy storage lifetime | ≥ 3 ms | Cr₃+:Al₂O₃ |
— | 2.3–3.5 eV | — |
Thickness | 365–530 nm | — |
— | 0.75–2 eV | — |
FIG. 3 is a block diagram of a prior art continuous wave ruby laser, pumped with a frequency doubled, near infrared laser diode pump neodymium solid state …
FIG. 4 is a block diagrams of a ruby laser directly pumped by a high bandgap GaN semiconductor laser diode. [0019]
FIG. 5 shows an optical configuration of a CW or QCW ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 6 shows an optical configuration of a Q-switched ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 7 is a block diagram of a source of pulsed DUV radiation at a wavelength of 347 nm produced by second harmonic nonlinear conversion of a ruby laser that …
FIG. 8 shows the measured continuous wave, CW, output power versus continuous wave pump power, of a ruby laser directly pumped by a high bandgap GaN laser …
| 27 % |
Cr₃+:Al₂O₃ |
power slope efficiency | 15 % | Cr₃+:Al₂O₃ |
optical-optical power conversion efficiency | ≥ 10 % | Cr₃+:Al₂O₃ |
ruby energy storage lifetime | ≥ 3 ms | Cr₃+:Al₂O₃ |
— | 2.3–3.5 eV | — |
Thickness | 365–530 nm | — |
— | 0.75–2 eV | — |
FIG. 3 is a block diagram of a prior art continuous wave ruby laser, pumped with a frequency doubled, near infrared laser diode pump neodymium solid state …
FIG. 4 is a block diagrams of a ruby laser directly pumped by a high bandgap GaN semiconductor laser diode. [0019]
FIG. 5 shows an optical configuration of a CW or QCW ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 6 shows an optical configuration of a Q-switched ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 7 is a block diagram of a source of pulsed DUV radiation at a wavelength of 347 nm produced by second harmonic nonlinear conversion of a ruby laser that …
FIG. 8 shows the measured continuous wave, CW, output power versus continuous wave pump power, of a ruby laser directly pumped by a high bandgap GaN laser …
| 27 % |
Cr₃+:Al₂O₃ |
power slope efficiency | 15 % | Cr₃+:Al₂O₃ |
optical-optical power conversion efficiency | ≥ 10 % | Cr₃+:Al₂O₃ |
ruby energy storage lifetime | ≥ 3 ms | Cr₃+:Al₂O₃ |
— | 2.3–3.5 eV | — |
Thickness | 365–530 nm | — |
— | 0.75–2 eV | — |
FIG. 3 is a block diagram of a prior art continuous wave ruby laser, pumped with a frequency doubled, near infrared laser diode pump neodymium solid state …
FIG. 4 is a block diagrams of a ruby laser directly pumped by a high bandgap GaN semiconductor laser diode. [0019]
FIG. 5 shows an optical configuration of a CW or QCW ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 6 shows an optical configuration of a Q-switched ruby laser directly pumped by a high bandgap GaN semiconductor laser diode emitting at a wavelength of ~ …
FIG. 7 is a block diagram of a source of pulsed DUV radiation at a wavelength of 347 nm produced by second harmonic nonlinear conversion of a ruby laser that …
FIG. 8 shows the measured continuous wave, CW, output power versus continuous wave pump power, of a ruby laser directly pumped by a high bandgap GaN laser …
| 27 % |
Cr₃+:Al₂O₃ |
power slope efficiency | 15 % | Cr₃+:Al₂O₃ |
optical-optical power conversion efficiency | ≥ 10 % | Cr₃+:Al₂O₃ |
ruby energy storage lifetime | ≥ 3 ms | Cr₃+:Al₂O₃ |
— | 2.3–3.5 eV | — |
Thickness | 365–530 nm | — |
— | 0.75–2 eV | — |