Patent
US 9,243,344GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD
Tadao Hashimoto, Shuji Nakamura
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,243,344Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
S. Porowski, MRS Internet Journal of Nitride Semiconductor, Res. 4 S1, (1999) G1.3.
T. Inoue, Y. Seki, O. Oda, S. Kurai, Y. Yamada, and T. Taguchi, Phys. Stat. 15 Sol. (b) 223 (2001) p. 15.
M. Aoki, H. Yamane, M. Shimada, S. Sarayama, and F. J. DiSalvo, J. Cryst. Growth 242 (2002) p. 70.
T. Iwahashi, F. Kawamura, M. Morishita, Y. Kai, M. Yoshimura, Y. Mo ri, and T. Sasaki, J. Cryst Growth 253 (2003) p. 1. 20 5. D. Peters, J. Cryst. Growth 104 (1990) pp. 411-418.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, J. M.Baranowski, M. Kaminska, Diamond and Related Mat. 7 (1998) pp. 1348-1350.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, M. Palczewska, Andrzej Wysmolek, M. Kaminska, MRS Internet Journal of Nitride 25 Semiconductor, Res. 3 25(1998).
Douglas R. Ketchum, Joseph W. Kolis, J. Cryst. Growth 222 (2001) pp. 431- 434.
U.S. Patent No. 6,656,615, issued, to R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski and Y. Kanbara, and entitled "Bulk monocrystalline gallium nitride." 15 Conclusion This concludes the description of the preferred embodiment of the present invention. The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit 5 the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto. Claims What is claimed is:
Please cancel claims 10 and 11 as follows: canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
polyhedron-shaped GaN bulk crystal
Materials described outside the worked examples.
gallium nitride
GaN
metallic gallium
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
exposed (000-1) N-polar c-plane surface area | ≥ 10 mm2 | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,243,344Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
S. Porowski, MRS Internet Journal of Nitride Semiconductor, Res. 4 S1, (1999) G1.3.
T. Inoue, Y. Seki, O. Oda, S. Kurai, Y. Yamada, and T. Taguchi, Phys. Stat. 15 Sol. (b) 223 (2001) p. 15.
M. Aoki, H. Yamane, M. Shimada, S. Sarayama, and F. J. DiSalvo, J. Cryst. Growth 242 (2002) p. 70.
T. Iwahashi, F. Kawamura, M. Morishita, Y. Kai, M. Yoshimura, Y. Mo ri, and T. Sasaki, J. Cryst Growth 253 (2003) p. 1. 20 5. D. Peters, J. Cryst. Growth 104 (1990) pp. 411-418.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, J. M.Baranowski, M. Kaminska, Diamond and Related Mat. 7 (1998) pp. 1348-1350.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, M. Palczewska, Andrzej Wysmolek, M. Kaminska, MRS Internet Journal of Nitride 25 Semiconductor, Res. 3 25(1998).
Douglas R. Ketchum, Joseph W. Kolis, J. Cryst. Growth 222 (2001) pp. 431- 434.
U.S. Patent No. 6,656,615, issued, to R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski and Y. Kanbara, and entitled "Bulk monocrystalline gallium nitride." 15 Conclusion This concludes the description of the preferred embodiment of the present invention. The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit 5 the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto. Claims What is claimed is:
Please cancel claims 10 and 11 as follows: canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
polyhedron-shaped GaN bulk crystal
Materials described outside the worked examples.
gallium nitride
GaN
metallic gallium
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
exposed (000-1) N-polar c-plane surface area | ≥ 10 mm2 | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,243,344Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
S. Porowski, MRS Internet Journal of Nitride Semiconductor, Res. 4 S1, (1999) G1.3.
T. Inoue, Y. Seki, O. Oda, S. Kurai, Y. Yamada, and T. Taguchi, Phys. Stat. 15 Sol. (b) 223 (2001) p. 15.
M. Aoki, H. Yamane, M. Shimada, S. Sarayama, and F. J. DiSalvo, J. Cryst. Growth 242 (2002) p. 70.
T. Iwahashi, F. Kawamura, M. Morishita, Y. Kai, M. Yoshimura, Y. Mo ri, and T. Sasaki, J. Cryst Growth 253 (2003) p. 1. 20 5. D. Peters, J. Cryst. Growth 104 (1990) pp. 411-418.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, J. M.Baranowski, M. Kaminska, Diamond and Related Mat. 7 (1998) pp. 1348-1350.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, M. Palczewska, Andrzej Wysmolek, M. Kaminska, MRS Internet Journal of Nitride 25 Semiconductor, Res. 3 25(1998).
Douglas R. Ketchum, Joseph W. Kolis, J. Cryst. Growth 222 (2001) pp. 431- 434.
U.S. Patent No. 6,656,615, issued, to R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski and Y. Kanbara, and entitled "Bulk monocrystalline gallium nitride." 15 Conclusion This concludes the description of the preferred embodiment of the present invention. The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit 5 the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto. Claims What is claimed is:
Please cancel claims 10 and 11 as follows: canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
polyhedron-shaped GaN bulk crystal
Materials described outside the worked examples.
gallium nitride
GaN
metallic gallium
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
exposed (000-1) N-polar c-plane surface area | ≥ 10 mm2 | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,243,344Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
S. Porowski, MRS Internet Journal of Nitride Semiconductor, Res. 4 S1, (1999) G1.3.
T. Inoue, Y. Seki, O. Oda, S. Kurai, Y. Yamada, and T. Taguchi, Phys. Stat. 15 Sol. (b) 223 (2001) p. 15.
M. Aoki, H. Yamane, M. Shimada, S. Sarayama, and F. J. DiSalvo, J. Cryst. Growth 242 (2002) p. 70.
T. Iwahashi, F. Kawamura, M. Morishita, Y. Kai, M. Yoshimura, Y. Mo ri, and T. Sasaki, J. Cryst Growth 253 (2003) p. 1. 20 5. D. Peters, J. Cryst. Growth 104 (1990) pp. 411-418.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, J. M.Baranowski, M. Kaminska, Diamond and Related Mat. 7 (1998) pp. 1348-1350.
R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, M. Palczewska, Andrzej Wysmolek, M. Kaminska, MRS Internet Journal of Nitride 25 Semiconductor, Res. 3 25(1998).
Douglas R. Ketchum, Joseph W. Kolis, J. Cryst. Growth 222 (2001) pp. 431- 434.
U.S. Patent No. 6,656,615, issued, to R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski and Y. Kanbara, and entitled "Bulk monocrystalline gallium nitride." 15 Conclusion This concludes the description of the preferred embodiment of the present invention. The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit 5 the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto. Claims What is claimed is:
Please cancel claims 10 and 11 as follows: canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
polyhedron-shaped GaN bulk crystal
Materials described outside the worked examples.
gallium nitride
GaN
metallic gallium
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
exposed (000-1) N-polar c-plane surface area | ≥ 10 mm2 | GaN |
Related documents with shared materials, methods, properties, or citations.
ammonia
NH₃
KNH₂
NaNH₂
LiNH₂
potassium
K
sodium
Na
lithium
Li
Ca(NH₂)2
Mg(NH₂)2
Ba(NH₂)2
Ca₃N₂
Mg₃N₂
MgCl₂
CaCl₂
MgBr₂
CaBr₂
MgI₂
CaI₂
magnesium
Mg
calcium
Ca
Ni-Cr based superalloy
| >0.5x c-plane surface area |
GaN |
Thickness | ≥ 10 mm | — |
ammonia
NH₃
KNH₂
NaNH₂
LiNH₂
potassium
K
sodium
Na
lithium
Li
Ca(NH₂)2
Mg(NH₂)2
Ba(NH₂)2
Ca₃N₂
Mg₃N₂
MgCl₂
CaCl₂
MgBr₂
CaBr₂
MgI₂
CaI₂
magnesium
Mg
calcium
Ca
Ni-Cr based superalloy
| >0.5x c-plane surface area |
GaN |
Thickness | ≥ 10 mm | — |
ammonia
NH₃
KNH₂
NaNH₂
LiNH₂
potassium
K
sodium
Na
lithium
Li
Ca(NH₂)2
Mg(NH₂)2
Ba(NH₂)2
Ca₃N₂
Mg₃N₂
MgCl₂
CaCl₂
MgBr₂
CaBr₂
MgI₂
CaI₂
magnesium
Mg
calcium
Ca
Ni-Cr based superalloy
| >0.5x c-plane surface area |
GaN |
Thickness | ≥ 10 mm | — |
ammonia
NH₃
KNH₂
NaNH₂
LiNH₂
potassium
K
sodium
Na
lithium
Li
Ca(NH₂)2
Mg(NH₂)2
Ba(NH₂)2
Ca₃N₂
Mg₃N₂
MgCl₂
CaCl₂
MgBr₂
CaBr₂
MgI₂
CaI₂
magnesium
Mg
calcium
Ca
Ni-Cr based superalloy
| >0.5x c-plane surface area |
GaN |
Thickness | ≥ 10 mm | — |