Patent
US 12,317,564 B2GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE
Shenghou Liu, Wenbi Cai
XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD., Xiamen (CN)·May 27, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,317,564 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating consecutive steps of an embodiment of a method of forming an ohmic contact for a gallium nitride (GaN)-based compound …
FIG. 2 are scanning electron microscopy images respec- tively showing the ohmic contact formed by the embodiment according to the present disclosure and that …
FIG. 3 is a schematic view illustrating the GaN-based compound semiconductor device according to the present disclosure which is manufactured by the method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN)-based compound semiconduc-tor device, comprising: a GaN-based epitaxial structure; and B₂ an annealed metal layered structure that is formed on said GaN-based epitaxial structure, and that includes a metallic barrier layer, a conductive unit and a protective unit which is formed on a lateral surface of said conductive unit, said metallic barrier layer and said conductive unit being sequentially disposed on said GaN-based epitaxial structure in such order, an ohmic contact being formed between said GaN-based epi-taxial structure and said annealed metal layered struc-ture, wherein said protective unit includes a metal oxide mate-rial having one of NiAlO, AuAlO, and a combination thereof.
The GaN-based compound semiconductor device as claimed in claim 1, wherein said conductive unit contains at least one of AlNi, NiAu, AuAl, or AuAlNi.
The GaN-based compound semiconductor device as claimed in claim 1, wherein said metallic barrier layer contains TiN. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based compound semiconductor device with ohmic contact
GaN-based HEMT with AlGaN/GaN heterostructure
Materials described outside the worked examples.
GaN-based epitaxial structure
metallic barrier layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images comparing ohmic contact formed by the method of the present disclosure (right panel) versus conventional method (left panel), as shown in FIG. 2.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–30 nm | — |
Thickness | 100–200 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,317,564 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating consecutive steps of an embodiment of a method of forming an ohmic contact for a gallium nitride (GaN)-based compound …
FIG. 2 are scanning electron microscopy images respec- tively showing the ohmic contact formed by the embodiment according to the present disclosure and that …
FIG. 3 is a schematic view illustrating the GaN-based compound semiconductor device according to the present disclosure which is manufactured by the method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN)-based compound semiconduc-tor device, comprising: a GaN-based epitaxial structure; and B₂ an annealed metal layered structure that is formed on said GaN-based epitaxial structure, and that includes a metallic barrier layer, a conductive unit and a protective unit which is formed on a lateral surface of said conductive unit, said metallic barrier layer and said conductive unit being sequentially disposed on said GaN-based epitaxial structure in such order, an ohmic contact being formed between said GaN-based epi-taxial structure and said annealed metal layered struc-ture, wherein said protective unit includes a metal oxide mate-rial having one of NiAlO, AuAlO, and a combination thereof.
The GaN-based compound semiconductor device as claimed in claim 1, wherein said conductive unit contains at least one of AlNi, NiAu, AuAl, or AuAlNi.
The GaN-based compound semiconductor device as claimed in claim 1, wherein said metallic barrier layer contains TiN. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based compound semiconductor device with ohmic contact
GaN-based HEMT with AlGaN/GaN heterostructure
Materials described outside the worked examples.
GaN-based epitaxial structure
metallic barrier layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images comparing ohmic contact formed by the method of the present disclosure (right panel) versus conventional method (left panel), as shown in FIG. 2.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–30 nm | — |
Thickness | 100–200 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,317,564 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating consecutive steps of an embodiment of a method of forming an ohmic contact for a gallium nitride (GaN)-based compound …
FIG. 2 are scanning electron microscopy images respec- tively showing the ohmic contact formed by the embodiment according to the present disclosure and that …
FIG. 3 is a schematic view illustrating the GaN-based compound semiconductor device according to the present disclosure which is manufactured by the method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN)-based compound semiconduc-tor device, comprising: a GaN-based epitaxial structure; and B₂ an annealed metal layered structure that is formed on said GaN-based epitaxial structure, and that includes a metallic barrier layer, a conductive unit and a protective unit which is formed on a lateral surface of said conductive unit, said metallic barrier layer and said conductive unit being sequentially disposed on said GaN-based epitaxial structure in such order, an ohmic contact being formed between said GaN-based epi-taxial structure and said annealed metal layered struc-ture, wherein said protective unit includes a metal oxide mate-rial having one of NiAlO, AuAlO, and a combination thereof.
The GaN-based compound semiconductor device as claimed in claim 1, wherein said conductive unit contains at least one of AlNi, NiAu, AuAl, or AuAlNi.
The GaN-based compound semiconductor device as claimed in claim 1, wherein said metallic barrier layer contains TiN. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based compound semiconductor device with ohmic contact
GaN-based HEMT with AlGaN/GaN heterostructure
Materials described outside the worked examples.
GaN-based epitaxial structure
metallic barrier layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images comparing ohmic contact formed by the method of the present disclosure (right panel) versus conventional method (left panel), as shown in FIG. 2.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–30 nm | — |
Thickness | 100–200 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,317,564 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view illustrating consecutive steps of an embodiment of a method of forming an ohmic contact for a gallium nitride (GaN)-based compound …
FIG. 2 are scanning electron microscopy images respec- tively showing the ohmic contact formed by the embodiment according to the present disclosure and that …
FIG. 3 is a schematic view illustrating the GaN-based compound semiconductor device according to the present disclosure which is manufactured by the method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN)-based compound semiconduc-tor device, comprising: a GaN-based epitaxial structure; and B₂ an annealed metal layered structure that is formed on said GaN-based epitaxial structure, and that includes a metallic barrier layer, a conductive unit and a protective unit which is formed on a lateral surface of said conductive unit, said metallic barrier layer and said conductive unit being sequentially disposed on said GaN-based epitaxial structure in such order, an ohmic contact being formed between said GaN-based epi-taxial structure and said annealed metal layered struc-ture, wherein said protective unit includes a metal oxide mate-rial having one of NiAlO, AuAlO, and a combination thereof.
The GaN-based compound semiconductor device as claimed in claim 1, wherein said conductive unit contains at least one of AlNi, NiAu, AuAl, or AuAlNi.
The GaN-based compound semiconductor device as claimed in claim 1, wherein said metallic barrier layer contains TiN. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based compound semiconductor device with ohmic contact
GaN-based HEMT with AlGaN/GaN heterostructure
Materials described outside the worked examples.
GaN-based epitaxial structure
metallic barrier layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images comparing ohmic contact formed by the method of the present disclosure (right panel) versus conventional method (left panel), as shown in FIG. 2.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–30 nm | — |
Thickness | 100–200 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
AuAlO
AlNi
NiAu
AuAl
AuAlNi
Au
Ni
Al
diffusion barrier layer
AlO layer
AlO
TiN
Ti (diffusion barrier layer)
Ti
AlGaN/GaN heterostructure
| — |
Temperature | 350–650 °C | — |
Duration | 30–240 seconds | — |
Temperature | 400–600 °C | — |
Duration | 50–150 seconds | — |
Temperature | 20–30 °C | — |
Duration | 30–180 seconds | — |
Temperature | 700–900 °C | — |
Duration | 20–60 seconds | — |
Temperature | ≤ 50 °C | — |
AuAlO
AlNi
NiAu
AuAl
AuAlNi
Au
Ni
Al
diffusion barrier layer
AlO layer
AlO
TiN
Ti (diffusion barrier layer)
Ti
AlGaN/GaN heterostructure
| — |
Temperature | 350–650 °C | — |
Duration | 30–240 seconds | — |
Temperature | 400–600 °C | — |
Duration | 50–150 seconds | — |
Temperature | 20–30 °C | — |
Duration | 30–180 seconds | — |
Temperature | 700–900 °C | — |
Duration | 20–60 seconds | — |
Temperature | ≤ 50 °C | — |
AuAlO
AlNi
NiAu
AuAl
AuAlNi
Au
Ni
Al
diffusion barrier layer
AlO layer
AlO
TiN
Ti (diffusion barrier layer)
Ti
AlGaN/GaN heterostructure
| — |
Temperature | 350–650 °C | — |
Duration | 30–240 seconds | — |
Temperature | 400–600 °C | — |
Duration | 50–150 seconds | — |
Temperature | 20–30 °C | — |
Duration | 30–180 seconds | — |
Temperature | 700–900 °C | — |
Duration | 20–60 seconds | — |
Temperature | ≤ 50 °C | — |
AuAlO
AlNi
NiAu
AuAl
AuAlNi
Au
Ni
Al
diffusion barrier layer
AlO layer
AlO
TiN
Ti (diffusion barrier layer)
Ti
AlGaN/GaN heterostructure
| — |
Temperature | 350–650 °C | — |
Duration | 30–240 seconds | — |
Temperature | 400–600 °C | — |
Duration | 50–150 seconds | — |
Temperature | 20–30 °C | — |
Duration | 30–180 seconds | — |
Temperature | 700–900 °C | — |
Duration | 20–60 seconds | — |
Temperature | ≤ 50 °C | — |