Patent
US 10,403,747SEMICONDUCTOR DEVICE AND METHOD OF MAKING A SEMICONDUCTOR DEVICE
Godefridus Adrianus Maria Hurkx
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,403,747Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a semiconductor device according to an embodiment of this disclosure;
Figure 2 shows a semiconductor device according to another embodiment of this 10 disclosure;
Figures 3A to 3D show a method of making a semiconductor device incorporating a contact of the kind shown in
Figures 4A to 4D show a method of making a semiconductor device incorporating a contact of the kind shown in
Figures 5A to 5D show a method of making a semiconductor device according to a further embodiment of this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a Hi g h Electron Mobility Transistor (HEMT) comprising a g ate contact located between a source contact and a drain contact; a substrate having an AIGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AIGaN layer and the GaN layer; and a plurality of contacts, wherein at least one contact of the plurality of contacts is the drain contact of the HEMT and comprises: an ohmic contact portion located on a major surface of the substrate, wherein the ohmic contact portion comprises a first electrically conductive material; and a trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer, wherein the trench is at least partially filled with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material than the first electrically conductive material. Currently amended
The semiconductor device of claim 1, wherein the at least one contact includes a central part aligned with the trench, wherein the central part is at least partially filled with the second electrically conductive material, and wherein the central part is substantially surrounded by the ohmic contact portion when viewed from above the major surface. Previously presented
The semiconductor device of claim 1, wherein the substrate further includes a GaN cap layer located on the AIGaN layer, and wherein the trench of the at least one contact passes through the GaN cap layer. Previously presented
(Withdrawn-currently amended) A method of making a semiconductor device of claim 1, the method comprising: providing a substrate having an AIGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AIGaN layer and the GaN layer; and forming a plurality of contacts of the device, wherein forming at least one drain contact of the plurality of contacts com prises: depositing a first electrically conductive material on a major surface of the substrate to form an ohmic contact portion; forming a trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer; and at least partially filling the trench with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material to the first electrically conductive material, wherein the semiconductor device comprises a Hi g h Electron Mobility Transistor (HEMT) that comprises a q ate contact located between a source contact and a drain contact, and the at least one drain contact is the drain contact of the HEMT. Currently amended
Cancelled Canceled
Cancelled Canceled
The semiconductor device of claim 61, comprising at least one island located between the drain contact and the gate contact, wherein each island includes the trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer, and wherein the trench is at least partially filled with the second electrically conductive material. Currently amended
The semiconductor device of claim 61, wherein the gate contact of the HEMT comprises the second electrically conductive material. Currently amended
The semiconductor device of claim 61, wherein the first electrically conductive material comprises one or both of an alloy of Ti/A l and/or wherein the second electrically conductive material comprises Ni, Pd, Pt or TiWN. Currently amended
Cancelled Canceled
A semiconductor device comprisin g --: a Schottky diode comprisin g a cathode and a q ate contact of an anode; a substrate havin g an AIGaN layer located on a GaN layer for formin g a two dimensional electron g as at an interface between the AIGaN layer and the GaN layer; and a plurality of contacts, wherein at least one contact of the plurality of contacts is the cathode of the Schottky diode and comprises: an ohmic contact portion located on a ma i or surface of the substrate, wherein the ohmic contact portion comprises a first electrically conductive material; and a trench extendin g down into the substrate from the ma i or surface, wherein the trench passes throu g h the AIGaN layer and into the GaN layer, wherein the trench is at least partially filled with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material than the first electrically conductive material, and wherein the q ate contact of the anode of the Schottk y diode comprises the second electrically conductive material. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN/AlGaN High Electron Mobility Transistor (HEMT) with trench drain contact
Materials described outside the worked examples.
first electrically conductive material (ohmic contact, e.g. Ti/Al alloy)
second electrically conductive material (trench fill, e.g. Ni, Pd, Pt or TiWN)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
contact resistivity upper bound | 1000000000 Ohm.mm | first electrically conductive material (ohmic contact, e.g. Ti/Al alloy)second electrically conductive material (trench fill, e.g. Ni, Pd, Pt or TiWN) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,403,747Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a semiconductor device according to an embodiment of this disclosure;
Figure 2 shows a semiconductor device according to another embodiment of this 10 disclosure;
Figures 3A to 3D show a method of making a semiconductor device incorporating a contact of the kind shown in
Figures 4A to 4D show a method of making a semiconductor device incorporating a contact of the kind shown in
Figures 5A to 5D show a method of making a semiconductor device according to a further embodiment of this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a Hi g h Electron Mobility Transistor (HEMT) comprising a g ate contact located between a source contact and a drain contact; a substrate having an AIGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AIGaN layer and the GaN layer; and a plurality of contacts, wherein at least one contact of the plurality of contacts is the drain contact of the HEMT and comprises: an ohmic contact portion located on a major surface of the substrate, wherein the ohmic contact portion comprises a first electrically conductive material; and a trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer, wherein the trench is at least partially filled with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material than the first electrically conductive material. Currently amended
The semiconductor device of claim 1, wherein the at least one contact includes a central part aligned with the trench, wherein the central part is at least partially filled with the second electrically conductive material, and wherein the central part is substantially surrounded by the ohmic contact portion when viewed from above the major surface. Previously presented
The semiconductor device of claim 1, wherein the substrate further includes a GaN cap layer located on the AIGaN layer, and wherein the trench of the at least one contact passes through the GaN cap layer. Previously presented
(Withdrawn-currently amended) A method of making a semiconductor device of claim 1, the method comprising: providing a substrate having an AIGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AIGaN layer and the GaN layer; and forming a plurality of contacts of the device, wherein forming at least one drain contact of the plurality of contacts com prises: depositing a first electrically conductive material on a major surface of the substrate to form an ohmic contact portion; forming a trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer; and at least partially filling the trench with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material to the first electrically conductive material, wherein the semiconductor device comprises a Hi g h Electron Mobility Transistor (HEMT) that comprises a q ate contact located between a source contact and a drain contact, and the at least one drain contact is the drain contact of the HEMT. Currently amended
Cancelled Canceled
Cancelled Canceled
The semiconductor device of claim 61, comprising at least one island located between the drain contact and the gate contact, wherein each island includes the trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer, and wherein the trench is at least partially filled with the second electrically conductive material. Currently amended
The semiconductor device of claim 61, wherein the gate contact of the HEMT comprises the second electrically conductive material. Currently amended
The semiconductor device of claim 61, wherein the first electrically conductive material comprises one or both of an alloy of Ti/A l and/or wherein the second electrically conductive material comprises Ni, Pd, Pt or TiWN. Currently amended
Cancelled Canceled
A semiconductor device comprisin g --: a Schottky diode comprisin g a cathode and a q ate contact of an anode; a substrate havin g an AIGaN layer located on a GaN layer for formin g a two dimensional electron g as at an interface between the AIGaN layer and the GaN layer; and a plurality of contacts, wherein at least one contact of the plurality of contacts is the cathode of the Schottky diode and comprises: an ohmic contact portion located on a ma i or surface of the substrate, wherein the ohmic contact portion comprises a first electrically conductive material; and a trench extendin g down into the substrate from the ma i or surface, wherein the trench passes throu g h the AIGaN layer and into the GaN layer, wherein the trench is at least partially filled with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material than the first electrically conductive material, and wherein the q ate contact of the anode of the Schottk y diode comprises the second electrically conductive material. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN/AlGaN High Electron Mobility Transistor (HEMT) with trench drain contact
Materials described outside the worked examples.
first electrically conductive material (ohmic contact, e.g. Ti/Al alloy)
second electrically conductive material (trench fill, e.g. Ni, Pd, Pt or TiWN)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
contact resistivity upper bound | 1000000000 Ohm.mm | first electrically conductive material (ohmic contact, e.g. Ti/Al alloy)second electrically conductive material (trench fill, e.g. Ni, Pd, Pt or TiWN) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,403,747Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a semiconductor device according to an embodiment of this disclosure;
Figure 2 shows a semiconductor device according to another embodiment of this 10 disclosure;
Figures 3A to 3D show a method of making a semiconductor device incorporating a contact of the kind shown in
Figures 4A to 4D show a method of making a semiconductor device incorporating a contact of the kind shown in
Figures 5A to 5D show a method of making a semiconductor device according to a further embodiment of this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a Hi g h Electron Mobility Transistor (HEMT) comprising a g ate contact located between a source contact and a drain contact; a substrate having an AIGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AIGaN layer and the GaN layer; and a plurality of contacts, wherein at least one contact of the plurality of contacts is the drain contact of the HEMT and comprises: an ohmic contact portion located on a major surface of the substrate, wherein the ohmic contact portion comprises a first electrically conductive material; and a trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer, wherein the trench is at least partially filled with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material than the first electrically conductive material. Currently amended
The semiconductor device of claim 1, wherein the at least one contact includes a central part aligned with the trench, wherein the central part is at least partially filled with the second electrically conductive material, and wherein the central part is substantially surrounded by the ohmic contact portion when viewed from above the major surface. Previously presented
The semiconductor device of claim 1, wherein the substrate further includes a GaN cap layer located on the AIGaN layer, and wherein the trench of the at least one contact passes through the GaN cap layer. Previously presented
(Withdrawn-currently amended) A method of making a semiconductor device of claim 1, the method comprising: providing a substrate having an AIGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AIGaN layer and the GaN layer; and forming a plurality of contacts of the device, wherein forming at least one drain contact of the plurality of contacts com prises: depositing a first electrically conductive material on a major surface of the substrate to form an ohmic contact portion; forming a trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer; and at least partially filling the trench with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material to the first electrically conductive material, wherein the semiconductor device comprises a Hi g h Electron Mobility Transistor (HEMT) that comprises a q ate contact located between a source contact and a drain contact, and the at least one drain contact is the drain contact of the HEMT. Currently amended
Cancelled Canceled
Cancelled Canceled
The semiconductor device of claim 61, comprising at least one island located between the drain contact and the gate contact, wherein each island includes the trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer, and wherein the trench is at least partially filled with the second electrically conductive material. Currently amended
The semiconductor device of claim 61, wherein the gate contact of the HEMT comprises the second electrically conductive material. Currently amended
The semiconductor device of claim 61, wherein the first electrically conductive material comprises one or both of an alloy of Ti/A l and/or wherein the second electrically conductive material comprises Ni, Pd, Pt or TiWN. Currently amended
Cancelled Canceled
A semiconductor device comprisin g --: a Schottky diode comprisin g a cathode and a q ate contact of an anode; a substrate havin g an AIGaN layer located on a GaN layer for formin g a two dimensional electron g as at an interface between the AIGaN layer and the GaN layer; and a plurality of contacts, wherein at least one contact of the plurality of contacts is the cathode of the Schottky diode and comprises: an ohmic contact portion located on a ma i or surface of the substrate, wherein the ohmic contact portion comprises a first electrically conductive material; and a trench extendin g down into the substrate from the ma i or surface, wherein the trench passes throu g h the AIGaN layer and into the GaN layer, wherein the trench is at least partially filled with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material than the first electrically conductive material, and wherein the q ate contact of the anode of the Schottk y diode comprises the second electrically conductive material. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN/AlGaN High Electron Mobility Transistor (HEMT) with trench drain contact
Materials described outside the worked examples.
first electrically conductive material (ohmic contact, e.g. Ti/Al alloy)
second electrically conductive material (trench fill, e.g. Ni, Pd, Pt or TiWN)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
contact resistivity upper bound | 1000000000 Ohm.mm | first electrically conductive material (ohmic contact, e.g. Ti/Al alloy)second electrically conductive material (trench fill, e.g. Ni, Pd, Pt or TiWN) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,403,747Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a semiconductor device according to an embodiment of this disclosure;
Figure 2 shows a semiconductor device according to another embodiment of this 10 disclosure;
Figures 3A to 3D show a method of making a semiconductor device incorporating a contact of the kind shown in
Figures 4A to 4D show a method of making a semiconductor device incorporating a contact of the kind shown in
Figures 5A to 5D show a method of making a semiconductor device according to a further embodiment of this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a Hi g h Electron Mobility Transistor (HEMT) comprising a g ate contact located between a source contact and a drain contact; a substrate having an AIGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AIGaN layer and the GaN layer; and a plurality of contacts, wherein at least one contact of the plurality of contacts is the drain contact of the HEMT and comprises: an ohmic contact portion located on a major surface of the substrate, wherein the ohmic contact portion comprises a first electrically conductive material; and a trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer, wherein the trench is at least partially filled with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material than the first electrically conductive material. Currently amended
The semiconductor device of claim 1, wherein the at least one contact includes a central part aligned with the trench, wherein the central part is at least partially filled with the second electrically conductive material, and wherein the central part is substantially surrounded by the ohmic contact portion when viewed from above the major surface. Previously presented
The semiconductor device of claim 1, wherein the substrate further includes a GaN cap layer located on the AIGaN layer, and wherein the trench of the at least one contact passes through the GaN cap layer. Previously presented
(Withdrawn-currently amended) A method of making a semiconductor device of claim 1, the method comprising: providing a substrate having an AIGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AIGaN layer and the GaN layer; and forming a plurality of contacts of the device, wherein forming at least one drain contact of the plurality of contacts com prises: depositing a first electrically conductive material on a major surface of the substrate to form an ohmic contact portion; forming a trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer; and at least partially filling the trench with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material to the first electrically conductive material, wherein the semiconductor device comprises a Hi g h Electron Mobility Transistor (HEMT) that comprises a q ate contact located between a source contact and a drain contact, and the at least one drain contact is the drain contact of the HEMT. Currently amended
Cancelled Canceled
Cancelled Canceled
The semiconductor device of claim 61, comprising at least one island located between the drain contact and the gate contact, wherein each island includes the trench extending down into the substrate from the major surface, wherein the trench passes through the AIGaN layer and into the GaN layer, and wherein the trench is at least partially filled with the second electrically conductive material. Currently amended
The semiconductor device of claim 61, wherein the gate contact of the HEMT comprises the second electrically conductive material. Currently amended
The semiconductor device of claim 61, wherein the first electrically conductive material comprises one or both of an alloy of Ti/A l and/or wherein the second electrically conductive material comprises Ni, Pd, Pt or TiWN. Currently amended
Cancelled Canceled
A semiconductor device comprisin g --: a Schottky diode comprisin g a cathode and a q ate contact of an anode; a substrate havin g an AIGaN layer located on a GaN layer for formin g a two dimensional electron g as at an interface between the AIGaN layer and the GaN layer; and a plurality of contacts, wherein at least one contact of the plurality of contacts is the cathode of the Schottky diode and comprises: an ohmic contact portion located on a ma i or surface of the substrate, wherein the ohmic contact portion comprises a first electrically conductive material; and a trench extendin g down into the substrate from the ma i or surface, wherein the trench passes throu g h the AIGaN layer and into the GaN layer, wherein the trench is at least partially filled with a second electrically conductive material, wherein the second electrically conductive material is a different electrically conductive material than the first electrically conductive material, and wherein the q ate contact of the anode of the Schottk y diode comprises the second electrically conductive material. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN/AlGaN High Electron Mobility Transistor (HEMT) with trench drain contact
Materials described outside the worked examples.
first electrically conductive material (ohmic contact, e.g. Ti/Al alloy)
second electrically conductive material (trench fill, e.g. Ni, Pd, Pt or TiWN)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
contact resistivity upper bound | 1000000000 Ohm.mm | first electrically conductive material (ohmic contact, e.g. Ti/Al alloy)second electrically conductive material (trench fill, e.g. Ni, Pd, Pt or TiWN) |
Related documents with shared materials, methods, properties, or citations.
GaN/AlGaN Schottky diode with trench cathode contact
GaN
Ti/Al alloy
Ti/Al
Nickel
Ni
Palladium
Pd
Platinum
Pt
TiWN
Aluminium (trench fill remainder)
Al
| 1000–3000 cm |
| — |
Thickness | 0–2000 cm | — |
GaN/AlGaN Schottky diode with trench cathode contact
GaN
Ti/Al alloy
Ti/Al
Nickel
Ni
Palladium
Pd
Platinum
Pt
TiWN
Aluminium (trench fill remainder)
Al
| 1000–3000 cm |
| — |
Thickness | 0–2000 cm | — |
GaN/AlGaN Schottky diode with trench cathode contact
GaN
Ti/Al alloy
Ti/Al
Nickel
Ni
Palladium
Pd
Platinum
Pt
TiWN
Aluminium (trench fill remainder)
Al
| 1000–3000 cm |
| — |
Thickness | 0–2000 cm | — |
GaN/AlGaN Schottky diode with trench cathode contact
GaN
Ti/Al alloy
Ti/Al
Nickel
Ni
Palladium
Pd
Platinum
Pt
TiWN
Aluminium (trench fill remainder)
Al
| 1000–3000 cm |
| — |
Thickness | 0–2000 cm | — |