Patent
US 8,691,627WAFER LEVEL PACKAGED GaN POWER DEVICE AND MANUFACTURING METHOD THEREOF
Ju Chull WON
US
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Patent
Atlas literature
Patent
US 8,691,627Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 a conf igouratmon view illustrating an 10 AlIGaJ/G aN HEW'L[el ement accor ding to an embod ament of -he p rese nt Inv ent ion, fli p-c hn p bonded to on …
FIG. 2, the reg on wnere a so u rce 31, a drai n 41, a nd a case 51 ar- formed s des i gnated b y an act ivTe region 60, a contacr pad 30 of t he source I s …
FIG. 3, a sou rce con tact bon ai ng p ac 90, a drain contacL bondi ng p ad 70, and a gate con tacL bon ding pa d 8 " or L he mod u le substr ate a r e c onfig …
FIG. 4 is a con figu rat i on view i llu stratin g a therma l via an d a backside metal formed on a m odule subs trate, according to a n era bodiment of tn e …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a GaN-based compound power semiconductor device, the method comprising the steps of: forming an element layer by growing a GaN-based compound element on a wafer; forming a contact pad for forming a source, a drain, and a gate in the GaN- based compound element; forming a bonding pad on a module substrate at a position corresponding to the formed contact pad; [[and]] formin g a throu g h via in the module substrate, the throu g h via havin g a size smaller than a size of the bondin g p ad in order to radiate heat g enerated from the GaN-based com p ound element; forming a bump on the bonding pad. of the m odule su b s trat e, and flip-chip bonding the GaN-based compound element to the module substrate by bonding the contact pad of the based compoun em to the bonding pad of the m o d ule s ub s trate through the formed bump.
The method as claimed in claim 1, whe-ein-the further com p risin g dis p osin g the contact pad of the GaN-based compound element i s-dispesed in a top/bottom or left/right symmetrical structure to the bonding pad. fomedonthe me s ub s trate.
The method as claimed in claim 1, whe-ein the further com p risin g formin g the GaN-based compound element has to have, in an active re g ion, a sub source contact pad er a sub drain contat pa formed in the source. or the drain in an actiVe region.
The method as claimed in claim 1, further com p risin g meltin g whe-in the bump is-m4en at a temperature lower than a preeess temperature at which of the GaN-based compound element melts.
The method as claimed in claim 1, further comprising melting the bump at a temperature of 250 C.
1 0. The method as claimed in claim 1, further comprising forming the GaN-based compound element to have, in an active region, a sub drain contact pad formed in the drain.
canceled
The method as claimed in claim [[6]] 1, w'herein the mo du l e substrate is further comprisin g formin g fr med-wit h a metal at a back side of the module substrate so that the heat radiated through the through via is radiated through a housing.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based compound power semiconductor device (flip-chip on module substrate)
Materials described outside the worked examples.
GaN-based compound
AlGaN/GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bump melting temperature | 250 °C | — |
GaN-based compound element melting temperature | 300 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,691,627Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 a conf igouratmon view illustrating an 10 AlIGaJ/G aN HEW'L[el ement accor ding to an embod ament of -he p rese nt Inv ent ion, fli p-c hn p bonded to on …
FIG. 2, the reg on wnere a so u rce 31, a drai n 41, a nd a case 51 ar- formed s des i gnated b y an act ivTe region 60, a contacr pad 30 of t he source I s …
FIG. 3, a sou rce con tact bon ai ng p ac 90, a drain contacL bondi ng p ad 70, and a gate con tacL bon ding pa d 8 " or L he mod u le substr ate a r e c onfig …
FIG. 4 is a con figu rat i on view i llu stratin g a therma l via an d a backside metal formed on a m odule subs trate, according to a n era bodiment of tn e …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a GaN-based compound power semiconductor device, the method comprising the steps of: forming an element layer by growing a GaN-based compound element on a wafer; forming a contact pad for forming a source, a drain, and a gate in the GaN- based compound element; forming a bonding pad on a module substrate at a position corresponding to the formed contact pad; [[and]] formin g a throu g h via in the module substrate, the throu g h via havin g a size smaller than a size of the bondin g p ad in order to radiate heat g enerated from the GaN-based com p ound element; forming a bump on the bonding pad. of the m odule su b s trat e, and flip-chip bonding the GaN-based compound element to the module substrate by bonding the contact pad of the based compoun em to the bonding pad of the m o d ule s ub s trate through the formed bump.
The method as claimed in claim 1, whe-ein-the further com p risin g dis p osin g the contact pad of the GaN-based compound element i s-dispesed in a top/bottom or left/right symmetrical structure to the bonding pad. fomedonthe me s ub s trate.
The method as claimed in claim 1, whe-ein the further com p risin g formin g the GaN-based compound element has to have, in an active re g ion, a sub source contact pad er a sub drain contat pa formed in the source. or the drain in an actiVe region.
The method as claimed in claim 1, further com p risin g meltin g whe-in the bump is-m4en at a temperature lower than a preeess temperature at which of the GaN-based compound element melts.
The method as claimed in claim 1, further comprising melting the bump at a temperature of 250 C.
1 0. The method as claimed in claim 1, further comprising forming the GaN-based compound element to have, in an active region, a sub drain contact pad formed in the drain.
canceled
The method as claimed in claim [[6]] 1, w'herein the mo du l e substrate is further comprisin g formin g fr med-wit h a metal at a back side of the module substrate so that the heat radiated through the through via is radiated through a housing.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based compound power semiconductor device (flip-chip on module substrate)
Materials described outside the worked examples.
GaN-based compound
AlGaN/GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bump melting temperature | 250 °C | — |
GaN-based compound element melting temperature | 300 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,691,627Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 a conf igouratmon view illustrating an 10 AlIGaJ/G aN HEW'L[el ement accor ding to an embod ament of -he p rese nt Inv ent ion, fli p-c hn p bonded to on …
FIG. 2, the reg on wnere a so u rce 31, a drai n 41, a nd a case 51 ar- formed s des i gnated b y an act ivTe region 60, a contacr pad 30 of t he source I s …
FIG. 3, a sou rce con tact bon ai ng p ac 90, a drain contacL bondi ng p ad 70, and a gate con tacL bon ding pa d 8 " or L he mod u le substr ate a r e c onfig …
FIG. 4 is a con figu rat i on view i llu stratin g a therma l via an d a backside metal formed on a m odule subs trate, according to a n era bodiment of tn e …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a GaN-based compound power semiconductor device, the method comprising the steps of: forming an element layer by growing a GaN-based compound element on a wafer; forming a contact pad for forming a source, a drain, and a gate in the GaN- based compound element; forming a bonding pad on a module substrate at a position corresponding to the formed contact pad; [[and]] formin g a throu g h via in the module substrate, the throu g h via havin g a size smaller than a size of the bondin g p ad in order to radiate heat g enerated from the GaN-based com p ound element; forming a bump on the bonding pad. of the m odule su b s trat e, and flip-chip bonding the GaN-based compound element to the module substrate by bonding the contact pad of the based compoun em to the bonding pad of the m o d ule s ub s trate through the formed bump.
The method as claimed in claim 1, whe-ein-the further com p risin g dis p osin g the contact pad of the GaN-based compound element i s-dispesed in a top/bottom or left/right symmetrical structure to the bonding pad. fomedonthe me s ub s trate.
The method as claimed in claim 1, whe-ein the further com p risin g formin g the GaN-based compound element has to have, in an active re g ion, a sub source contact pad er a sub drain contat pa formed in the source. or the drain in an actiVe region.
The method as claimed in claim 1, further com p risin g meltin g whe-in the bump is-m4en at a temperature lower than a preeess temperature at which of the GaN-based compound element melts.
The method as claimed in claim 1, further comprising melting the bump at a temperature of 250 C.
1 0. The method as claimed in claim 1, further comprising forming the GaN-based compound element to have, in an active region, a sub drain contact pad formed in the drain.
canceled
The method as claimed in claim [[6]] 1, w'herein the mo du l e substrate is further comprisin g formin g fr med-wit h a metal at a back side of the module substrate so that the heat radiated through the through via is radiated through a housing.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based compound power semiconductor device (flip-chip on module substrate)
Materials described outside the worked examples.
GaN-based compound
AlGaN/GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bump melting temperature | 250 °C | — |
GaN-based compound element melting temperature | 300 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,691,627Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 a conf igouratmon view illustrating an 10 AlIGaJ/G aN HEW'L[el ement accor ding to an embod ament of -he p rese nt Inv ent ion, fli p-c hn p bonded to on …
FIG. 2, the reg on wnere a so u rce 31, a drai n 41, a nd a case 51 ar- formed s des i gnated b y an act ivTe region 60, a contacr pad 30 of t he source I s …
FIG. 3, a sou rce con tact bon ai ng p ac 90, a drain contacL bondi ng p ad 70, and a gate con tacL bon ding pa d 8 " or L he mod u le substr ate a r e c onfig …
FIG. 4 is a con figu rat i on view i llu stratin g a therma l via an d a backside metal formed on a m odule subs trate, according to a n era bodiment of tn e …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a GaN-based compound power semiconductor device, the method comprising the steps of: forming an element layer by growing a GaN-based compound element on a wafer; forming a contact pad for forming a source, a drain, and a gate in the GaN- based compound element; forming a bonding pad on a module substrate at a position corresponding to the formed contact pad; [[and]] formin g a throu g h via in the module substrate, the throu g h via havin g a size smaller than a size of the bondin g p ad in order to radiate heat g enerated from the GaN-based com p ound element; forming a bump on the bonding pad. of the m odule su b s trat e, and flip-chip bonding the GaN-based compound element to the module substrate by bonding the contact pad of the based compoun em to the bonding pad of the m o d ule s ub s trate through the formed bump.
The method as claimed in claim 1, whe-ein-the further com p risin g dis p osin g the contact pad of the GaN-based compound element i s-dispesed in a top/bottom or left/right symmetrical structure to the bonding pad. fomedonthe me s ub s trate.
The method as claimed in claim 1, whe-ein the further com p risin g formin g the GaN-based compound element has to have, in an active re g ion, a sub source contact pad er a sub drain contat pa formed in the source. or the drain in an actiVe region.
The method as claimed in claim 1, further com p risin g meltin g whe-in the bump is-m4en at a temperature lower than a preeess temperature at which of the GaN-based compound element melts.
The method as claimed in claim 1, further comprising melting the bump at a temperature of 250 C.
1 0. The method as claimed in claim 1, further comprising forming the GaN-based compound element to have, in an active region, a sub drain contact pad formed in the drain.
canceled
The method as claimed in claim [[6]] 1, w'herein the mo du l e substrate is further comprisin g formin g fr med-wit h a metal at a back side of the module substrate so that the heat radiated through the through via is radiated through a housing.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based compound power semiconductor device (flip-chip on module substrate)
Materials described outside the worked examples.
GaN-based compound
AlGaN/GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bump melting temperature | 250 °C | — |
GaN-based compound element melting temperature | 300 °C |
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