Patent
US 8,735,895ELECTRONIC DEVICE INCLUDING GRAPHENE THIN FILM AND METHODS OF FABRICATING THE SAME
Tae-Whan Kim
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,735,895Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, which is a flash memory device, may further include a source S and a drain D under the sandwich structure 50 and a control gate electrode G on the …
FIG. 2 is a flowchart illustrating a method of fabricating an electronic device according to another example embodiment of the inventive concepts; [0024]
FIG. 3E are cross-sectional views illustrating the method according to the flowchart of
FIG. 4 is a flowchart illustrating a method of fabricating an electronic device according to yet another example embodiment of the inventive concepts; [0026]
FIG. 5E are cross-sectional views illustrating the method according to the flowchart of
FIG. 6 is a flowchart illustrating a process of obtaining a-graphene thin film to be used in fabricating an electronic device according to still another example …
FIGS. 7 through 9 are views illustrating the process according to the flowchart of
FIG. 8. [0080] The chamber 230 may include a gas feeder 235 that may supply various gases to the substrate 210 to perform a CVD process basically. The gas …
FIG. 9, by stopping the supply of the vapor carbon supply source and reducing the amount of the flowing current in the thermal resistance heating method to cool …
FIG. 10 is a Transmission Electron Microscope (TEM) photo illustrating a PMMA/graphene/PMMA structure in an organic bistable memory device manufactured …
FIG. 11 is a current-voltage curve measured in an organic bistable memory device manufactured according to the example embodiment of the inventive concepts; …
FIG. 12 is a current-voltage curve measured after a bending test is performed on an organic bistable memory device manufactured according to an example …
FIG. 13 is a cycling-current curve before bending an organic bistable memory device manufactured according to an example embodiment of the inventive concepts; …
FIG. 14 is a cycling-current curve after bending an organic bistable memory device manufactured according to the example embodiment of the inventive concepts.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a device-substrate; a stacked structure including a graphene thin film between a first insulator and a second insulator; an electrode over the stacked structure and contacting an upper surface of the second insulator; and a conductive layer between the device-substrate and the stacked structure and contacting a lower su r face of the first insulator, the graphene thin film not contacting both the electrode and the conductive layer, wherein the electrode and the conductive la v er are transparent.
The electronic device of claim 1, wherein the conductive layer is a bottom electrode.
The electronic device of claim 1, wherein the conductive layer is a source/drain region.
The electronic device of claim 1, wherein the electrode includes at least one selected from the group consisting of Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd, alloys and combinations thereof.
The electronic device of claim 1, wherein the first insulator includes at least one selected from poly vinyl pyrrolidone (PVP), polystyrene (PS), poly methyl methacrylate (PMMA), polyimide (P I) and combinations thereof.
The electronic device of claim 1, wherein the graphene thin film has a sheet-shape and is formed through graphene deposition using a vapor carbon supply source.
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An electronic device, comprising: a conductive layer on a device-substrate; a first insulator over the conductive layer; a graphene thin film over the first insulator; a second insulator over the graphene thin film, the graphene thin film being mounted to one of the first insulator and the second insulator; and an electrode contacting an upper surface of the second insulator, the graphene thin film not contacting both the electrode and the conductive layer s U.S. Application No. 12/902,783 Atty. Dkt. No. 8947-000502/US Page 4 of 9 wherein the electrode and the conductive la y er are transparent.
The electronic device of claim 18, wherein the conductive layer is a bottom electrode.
The electronic device of claim 18, wherein the conductive layer is a source/drain region.
The electronic device of claim 18, wherein the electrode includes-at least one selected from the group consisting of Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd, alloys and combinations thereof.
The electronic device of claim 18, wherein the first insulator and the second insulator include at least one selected from poly vinyl pyrrolidone (PVP), polystyrene (PS), poly methyl methacrylate (PMMA), polyimide (PI) and combinations thereof.
The electronic device of claim 18, wherein the graphene thin film has a sheet-shape and is formed through graphene deposition using a vapor carbon supply source.
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canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
electronic device with stacked graphene structure (claim 1)
Materials described outside the worked examples.
graphene thin film
first insulator
second insulator
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10 is a Transmission Electron Microscope (TEM) photo illustrating a PMMA/graphene/PMMA structure in an organic bistable memory device manufactured …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,735,895Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, which is a flash memory device, may further include a source S and a drain D under the sandwich structure 50 and a control gate electrode G on the …
FIG. 2 is a flowchart illustrating a method of fabricating an electronic device according to another example embodiment of the inventive concepts; [0024]
FIG. 3E are cross-sectional views illustrating the method according to the flowchart of
FIG. 4 is a flowchart illustrating a method of fabricating an electronic device according to yet another example embodiment of the inventive concepts; [0026]
FIG. 5E are cross-sectional views illustrating the method according to the flowchart of
FIG. 6 is a flowchart illustrating a process of obtaining a-graphene thin film to be used in fabricating an electronic device according to still another example …
FIGS. 7 through 9 are views illustrating the process according to the flowchart of
FIG. 8. [0080] The chamber 230 may include a gas feeder 235 that may supply various gases to the substrate 210 to perform a CVD process basically. The gas …
FIG. 9, by stopping the supply of the vapor carbon supply source and reducing the amount of the flowing current in the thermal resistance heating method to cool …
FIG. 10 is a Transmission Electron Microscope (TEM) photo illustrating a PMMA/graphene/PMMA structure in an organic bistable memory device manufactured …
FIG. 11 is a current-voltage curve measured in an organic bistable memory device manufactured according to the example embodiment of the inventive concepts; …
FIG. 12 is a current-voltage curve measured after a bending test is performed on an organic bistable memory device manufactured according to an example …
FIG. 13 is a cycling-current curve before bending an organic bistable memory device manufactured according to an example embodiment of the inventive concepts; …
FIG. 14 is a cycling-current curve after bending an organic bistable memory device manufactured according to the example embodiment of the inventive concepts.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a device-substrate; a stacked structure including a graphene thin film between a first insulator and a second insulator; an electrode over the stacked structure and contacting an upper surface of the second insulator; and a conductive layer between the device-substrate and the stacked structure and contacting a lower su r face of the first insulator, the graphene thin film not contacting both the electrode and the conductive layer, wherein the electrode and the conductive la v er are transparent.
The electronic device of claim 1, wherein the conductive layer is a bottom electrode.
The electronic device of claim 1, wherein the conductive layer is a source/drain region.
The electronic device of claim 1, wherein the electrode includes at least one selected from the group consisting of Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd, alloys and combinations thereof.
The electronic device of claim 1, wherein the first insulator includes at least one selected from poly vinyl pyrrolidone (PVP), polystyrene (PS), poly methyl methacrylate (PMMA), polyimide (P I) and combinations thereof.
The electronic device of claim 1, wherein the graphene thin film has a sheet-shape and is formed through graphene deposition using a vapor carbon supply source.
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canceled
canceled
canceled
canceled
canceled
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An electronic device, comprising: a conductive layer on a device-substrate; a first insulator over the conductive layer; a graphene thin film over the first insulator; a second insulator over the graphene thin film, the graphene thin film being mounted to one of the first insulator and the second insulator; and an electrode contacting an upper surface of the second insulator, the graphene thin film not contacting both the electrode and the conductive layer s U.S. Application No. 12/902,783 Atty. Dkt. No. 8947-000502/US Page 4 of 9 wherein the electrode and the conductive la y er are transparent.
The electronic device of claim 18, wherein the conductive layer is a bottom electrode.
The electronic device of claim 18, wherein the conductive layer is a source/drain region.
The electronic device of claim 18, wherein the electrode includes-at least one selected from the group consisting of Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd, alloys and combinations thereof.
The electronic device of claim 18, wherein the first insulator and the second insulator include at least one selected from poly vinyl pyrrolidone (PVP), polystyrene (PS), poly methyl methacrylate (PMMA), polyimide (PI) and combinations thereof.
The electronic device of claim 18, wherein the graphene thin film has a sheet-shape and is formed through graphene deposition using a vapor carbon supply source.
-21. canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
electronic device with stacked graphene structure (claim 1)
Materials described outside the worked examples.
graphene thin film
first insulator
second insulator
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10 is a Transmission Electron Microscope (TEM) photo illustrating a PMMA/graphene/PMMA structure in an organic bistable memory device manufactured …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,735,895Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, which is a flash memory device, may further include a source S and a drain D under the sandwich structure 50 and a control gate electrode G on the …
FIG. 2 is a flowchart illustrating a method of fabricating an electronic device according to another example embodiment of the inventive concepts; [0024]
FIG. 3E are cross-sectional views illustrating the method according to the flowchart of
FIG. 4 is a flowchart illustrating a method of fabricating an electronic device according to yet another example embodiment of the inventive concepts; [0026]
FIG. 5E are cross-sectional views illustrating the method according to the flowchart of
FIG. 6 is a flowchart illustrating a process of obtaining a-graphene thin film to be used in fabricating an electronic device according to still another example …
FIGS. 7 through 9 are views illustrating the process according to the flowchart of
FIG. 8. [0080] The chamber 230 may include a gas feeder 235 that may supply various gases to the substrate 210 to perform a CVD process basically. The gas …
FIG. 9, by stopping the supply of the vapor carbon supply source and reducing the amount of the flowing current in the thermal resistance heating method to cool …
FIG. 10 is a Transmission Electron Microscope (TEM) photo illustrating a PMMA/graphene/PMMA structure in an organic bistable memory device manufactured …
FIG. 11 is a current-voltage curve measured in an organic bistable memory device manufactured according to the example embodiment of the inventive concepts; …
FIG. 12 is a current-voltage curve measured after a bending test is performed on an organic bistable memory device manufactured according to an example …
FIG. 13 is a cycling-current curve before bending an organic bistable memory device manufactured according to an example embodiment of the inventive concepts; …
FIG. 14 is a cycling-current curve after bending an organic bistable memory device manufactured according to the example embodiment of the inventive concepts.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a device-substrate; a stacked structure including a graphene thin film between a first insulator and a second insulator; an electrode over the stacked structure and contacting an upper surface of the second insulator; and a conductive layer between the device-substrate and the stacked structure and contacting a lower su r face of the first insulator, the graphene thin film not contacting both the electrode and the conductive layer, wherein the electrode and the conductive la v er are transparent.
The electronic device of claim 1, wherein the conductive layer is a bottom electrode.
The electronic device of claim 1, wherein the conductive layer is a source/drain region.
The electronic device of claim 1, wherein the electrode includes at least one selected from the group consisting of Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd, alloys and combinations thereof.
The electronic device of claim 1, wherein the first insulator includes at least one selected from poly vinyl pyrrolidone (PVP), polystyrene (PS), poly methyl methacrylate (PMMA), polyimide (P I) and combinations thereof.
The electronic device of claim 1, wherein the graphene thin film has a sheet-shape and is formed through graphene deposition using a vapor carbon supply source.
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canceled
canceled
canceled
canceled
canceled
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An electronic device, comprising: a conductive layer on a device-substrate; a first insulator over the conductive layer; a graphene thin film over the first insulator; a second insulator over the graphene thin film, the graphene thin film being mounted to one of the first insulator and the second insulator; and an electrode contacting an upper surface of the second insulator, the graphene thin film not contacting both the electrode and the conductive layer s U.S. Application No. 12/902,783 Atty. Dkt. No. 8947-000502/US Page 4 of 9 wherein the electrode and the conductive la y er are transparent.
The electronic device of claim 18, wherein the conductive layer is a bottom electrode.
The electronic device of claim 18, wherein the conductive layer is a source/drain region.
The electronic device of claim 18, wherein the electrode includes-at least one selected from the group consisting of Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd, alloys and combinations thereof.
The electronic device of claim 18, wherein the first insulator and the second insulator include at least one selected from poly vinyl pyrrolidone (PVP), polystyrene (PS), poly methyl methacrylate (PMMA), polyimide (PI) and combinations thereof.
The electronic device of claim 18, wherein the graphene thin film has a sheet-shape and is formed through graphene deposition using a vapor carbon supply source.
-21. canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
electronic device with stacked graphene structure (claim 1)
Materials described outside the worked examples.
graphene thin film
first insulator
second insulator
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10 is a Transmission Electron Microscope (TEM) photo illustrating a PMMA/graphene/PMMA structure in an organic bistable memory device manufactured …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,735,895Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, which is a flash memory device, may further include a source S and a drain D under the sandwich structure 50 and a control gate electrode G on the …
FIG. 2 is a flowchart illustrating a method of fabricating an electronic device according to another example embodiment of the inventive concepts; [0024]
FIG. 3E are cross-sectional views illustrating the method according to the flowchart of
FIG. 4 is a flowchart illustrating a method of fabricating an electronic device according to yet another example embodiment of the inventive concepts; [0026]
FIG. 5E are cross-sectional views illustrating the method according to the flowchart of
FIG. 6 is a flowchart illustrating a process of obtaining a-graphene thin film to be used in fabricating an electronic device according to still another example …
FIGS. 7 through 9 are views illustrating the process according to the flowchart of
FIG. 8. [0080] The chamber 230 may include a gas feeder 235 that may supply various gases to the substrate 210 to perform a CVD process basically. The gas …
FIG. 9, by stopping the supply of the vapor carbon supply source and reducing the amount of the flowing current in the thermal resistance heating method to cool …
FIG. 10 is a Transmission Electron Microscope (TEM) photo illustrating a PMMA/graphene/PMMA structure in an organic bistable memory device manufactured …
FIG. 11 is a current-voltage curve measured in an organic bistable memory device manufactured according to the example embodiment of the inventive concepts; …
FIG. 12 is a current-voltage curve measured after a bending test is performed on an organic bistable memory device manufactured according to an example …
FIG. 13 is a cycling-current curve before bending an organic bistable memory device manufactured according to an example embodiment of the inventive concepts; …
FIG. 14 is a cycling-current curve after bending an organic bistable memory device manufactured according to the example embodiment of the inventive concepts.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a device-substrate; a stacked structure including a graphene thin film between a first insulator and a second insulator; an electrode over the stacked structure and contacting an upper surface of the second insulator; and a conductive layer between the device-substrate and the stacked structure and contacting a lower su r face of the first insulator, the graphene thin film not contacting both the electrode and the conductive layer, wherein the electrode and the conductive la v er are transparent.
The electronic device of claim 1, wherein the conductive layer is a bottom electrode.
The electronic device of claim 1, wherein the conductive layer is a source/drain region.
The electronic device of claim 1, wherein the electrode includes at least one selected from the group consisting of Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd, alloys and combinations thereof.
The electronic device of claim 1, wherein the first insulator includes at least one selected from poly vinyl pyrrolidone (PVP), polystyrene (PS), poly methyl methacrylate (PMMA), polyimide (P I) and combinations thereof.
The electronic device of claim 1, wherein the graphene thin film has a sheet-shape and is formed through graphene deposition using a vapor carbon supply source.
-17. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
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An electronic device, comprising: a conductive layer on a device-substrate; a first insulator over the conductive layer; a graphene thin film over the first insulator; a second insulator over the graphene thin film, the graphene thin film being mounted to one of the first insulator and the second insulator; and an electrode contacting an upper surface of the second insulator, the graphene thin film not contacting both the electrode and the conductive layer s U.S. Application No. 12/902,783 Atty. Dkt. No. 8947-000502/US Page 4 of 9 wherein the electrode and the conductive la y er are transparent.
The electronic device of claim 18, wherein the conductive layer is a bottom electrode.
The electronic device of claim 18, wherein the conductive layer is a source/drain region.
The electronic device of claim 18, wherein the electrode includes-at least one selected from the group consisting of Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd, alloys and combinations thereof.
The electronic device of claim 18, wherein the first insulator and the second insulator include at least one selected from poly vinyl pyrrolidone (PVP), polystyrene (PS), poly methyl methacrylate (PMMA), polyimide (PI) and combinations thereof.
The electronic device of claim 18, wherein the graphene thin film has a sheet-shape and is formed through graphene deposition using a vapor carbon supply source.
-21. canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
electronic device with stacked graphene structure (claim 1)
Materials described outside the worked examples.
graphene thin film
first insulator
second insulator
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10 is a Transmission Electron Microscope (TEM) photo illustrating a PMMA/graphene/PMMA structure in an organic bistable memory device manufactured …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Related documents with shared materials, methods, properties, or citations.
electronic device with stacked graphene structure (claim 18)
indium tin oxide
ITO
Al-doped ZnO
AZO
Ga-doped ZnO
GZO
Mg-doped ZnO
MGO
Mo-doped ZnO
In,Ga-codoped ZnO
IGZO
electrode metal (Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd)
poly vinyl pyrrolidone
PVP
polystyrene
PS
poly methyl methacrylate
PMMA
polyimide
PI
durability in that the characteristics of the device are not changed even by bending. [00109] Cycling tests on the device were performed before and after bending. FIG. 13 is a cycling-current curve before bending, and FIG. 14 is a cycling-current curve after b
electronic device with stacked graphene structure (claim 18)
indium tin oxide
ITO
Al-doped ZnO
AZO
Ga-doped ZnO
GZO
Mg-doped ZnO
MGO
Mo-doped ZnO
In,Ga-codoped ZnO
IGZO
electrode metal (Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd)
poly vinyl pyrrolidone
PVP
polystyrene
PS
poly methyl methacrylate
PMMA
polyimide
PI
durability in that the characteristics of the device are not changed even by bending. [00109] Cycling tests on the device were performed before and after bending. FIG. 13 is a cycling-current curve before bending, and FIG. 14 is a cycling-current curve after b
electronic device with stacked graphene structure (claim 18)
indium tin oxide
ITO
Al-doped ZnO
AZO
Ga-doped ZnO
GZO
Mg-doped ZnO
MGO
Mo-doped ZnO
In,Ga-codoped ZnO
IGZO
electrode metal (Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd)
poly vinyl pyrrolidone
PVP
polystyrene
PS
poly methyl methacrylate
PMMA
polyimide
PI
durability in that the characteristics of the device are not changed even by bending. [00109] Cycling tests on the device were performed before and after bending. FIG. 13 is a cycling-current curve before bending, and FIG. 14 is a cycling-current curve after b
electronic device with stacked graphene structure (claim 18)
indium tin oxide
ITO
Al-doped ZnO
AZO
Ga-doped ZnO
GZO
Mg-doped ZnO
MGO
Mo-doped ZnO
In,Ga-codoped ZnO
IGZO
electrode metal (Al, Au, Cu, Pt, Ag, W, Ni, Zn, Ti, Zr, Hf, Cd, Pd)
poly vinyl pyrrolidone
PVP
polystyrene
PS
poly methyl methacrylate
PMMA
polyimide
PI
durability in that the characteristics of the device are not changed even by bending. [00109] Cycling tests on the device were performed before and after bending. FIG. 13 is a cycling-current curve before bending, and FIG. 14 is a cycling-current curve after b