Devices, systems, and methods for wireless optical communication using LEDs

Mohammad Ali Khatibzadeh

Patent

Atlas literature

Patent

US 10,930,816

Devices, systems, and methods for wireless optical communication using LEDs

Mohammad Ali Khatibzadeh

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 depicts a block diagram illustrating an example of a communication link including two optical wireless transceiver modules. [0055]

FIG. 2

FIG. 2 depicts a block diagram of the communication link with two dual- wavelength, optical wireless transceiver modules. [0056]

FIG. 3

FIG. 3 depicts a Point-to-Multipoint, networked operation of wireless optical transceivers using multiple-wavelengths. [0057]

FIG. 4

FIG. 4 depicts a schematic of the disclosed "In-Phase Optical LED & Detector Arrays" for ultra-wideband wireless optical applications. [0058]

FIG. 5

FIG. 5 depicts a schematic of a Travelling Wave LED and Detector Array, Wireless Optical Transceiver. [0059]

FIG. 6

FIG. 6 depicts an equivalent circuit model of an LED/Detector pair in a wireless optical transceiver. [0060]

FIG. 7

FIG. 7 depicts an electrical equivalent circuit model for the Travelling Wave Wireless Optical Transceiver of

FIG. 8

FIG. 8 depicts an electrical simulation of the disclosed optical wireless link. [0062]

FIG. 9

FIG. 9 depicts an ultra-high speed single/multi quantum well(s) GaAs based LED structure with Carrier Conﬁnement Layer. [0063]

FIG. 10

FIG. 10 depicts an ultra-high speed single QW LED structure with alternate six layers of GaAsP and InGaP acting as a carrier conﬁnement layer (CCL). [0064]

FIG. 11

FIG. 11 depicts an ultra- high speed single QW LED structure with alternate four layers of GaAsP and InGaP acting as carrier conﬁnement layer (CCL). [0065]

FIG. 12

FIG. 12 depicts an ultra-high speed single QW LED structure with two layers of GaAsP and InGaP acting as a carrier conﬁnement layer (CCL). [0066]

FIG. 13

FIG. 13 depicts a comparison of the luminous output power and eﬃciency of the single QW InGaAs/GaAsP LEDs with diﬀerent CCLs. [0067]

FIG. 14

FIG. 14 depicts a 10 GHz transient response at 1.7 V of LED STR#3. [0068]

FIG. 15

FIG. 15 depicts a 20 GHz transient response at 1.7 V of LED STR#3. [0069]

FIG. 16

FIG. 16 depicts a DC luminous output power and eﬃciency of 1x1000 p 2 single QW InGaAs/GaAsP LED with 23 % In composition in the QW and 45 % P in the barriers; …

FIG. 17

FIG. 17 depicts a 10 GHz transient response at 1.7 V of 1x1000 p 2 single QW InGaAs/GaAsP LED with 23 % In composition in the QW and 45 % P in the barriers. …

FIG. 18

FIG. 18 depicts an emission spectrum of LED STR# 3. Peak emission wavelength is 998 nm. [0072]

FIG. 19

FIG. 19 depicts a Y-component current spreading of 5 p LED with three p+ electrode each of 0.7 p on top. [0073]

FIG. 20

FIG. 20 depicts a Y-component current spreading of 5 p LED with three p+ electrode each of 0.7 p embedded in the p+ layer. [0074]

FIG. 21

FIG. 21 depicts Y-component current spreading of 5 p LED with ﬁve p+ electrode each of 0.3 p on top. [0075]

FIG. 22

FIG. 22 depicts a comparison of 10 GHz transient response at 1.7 V for 5 p LEDs of diﬀerent p+ electrode designs and the ideal structure (Ideal p+ electrode …

FIG. 23

process tool top view

FIG. 23 depicts a top view of the LED. [0077]

FIG. 24

FIG. 24 depicts an example of thickness of the metal stacks of p+ electrode- 100 A thick Titanium, 100 A Platinum and 6800 A Gold. [0078]

FIG. 25

performance graph

FIG. 25 depicts a comparison of the 10 GHz transient performance of devices of diﬀerent widths and the ideal structure with a p+ electrode across the entire …

FIG. 26

FIG. 26 depicts a planer LED structure two three p+ electrodes on top and two n+ electrodes. [0080]

FIG. 27

FIG. 27 depicts a 20 GHz sinusoidal response at 1.7 V of the LED structure shown in

FIG. 28

FIG. 28 depicts an ultra-high speed single QW A l GaAs/GaAs LED structure. [0082]

FIG. 29

FIG. 29 depicts a luminous output power and eﬃciency of a single QW Al GaAs/GaAs LED. [0083]

FIG. 30

FIG. 30 depicts a 10 GHz transient response at 1.7 V of single QW A l GaAs/GaAs LED. [0084]

FIG. 31

FIG. 31 depicts an emission spectra of single QW A l GaAS/GaAs LED. [0085]

FIG. 32

FIG. 32 depicts a single QW InGaN/A l GaN ultra-high speed LED. [0086]

FIG. 33

FIG. 33 depicts a luminous output power and eﬃciency of single QW InGaN/A l GaN LED. [0087]

FIG. 34

FIG. 34 depicts a 10 GHz transient response at 3.5 V of single QW InGaN/A l GaN LED. [0088]

FIG. 35

FIG. 35 depicts an emission spectra of single QW InGaN/A l GaN LED with 11 % Indium composition in the InGaN QW. The peak emission wavelength is 0.4 p; [0089]

FIG. 36

FIG. 36 depicts an example of single QW InGaN/A l GaN LED with 11 % Indium composition in the InGaN QW. The distance between the n+ electrodes from the mesa is …

FIG. 37

FIG. 37 depicts a 20 GHz sinusoidal response at 3.5 V of single QW InGaN/A l GaN LED shown in

FIG. 38

FIG. 38 depicts an illustration of a ﬂip-chip GaN LED. [0092]

FIG. 39

FIG. 39 depicts an ultra-high bandwidth InGaSb/A l GaSb LED structure. [0093]

FIG. 40

FIG. 40 depicts a luminous output power and eﬃciency of single QW InGaSb/A l GaSb LED. [0094]

FIG. 41

FIG. 41 depicts a 10 GHz transient response at 0.8 V of single QW InGaSb/A l GaSb LED. [0095]

FIG. 42

FIG. 42 depicts an emission spectra of single QW InGaSb/A l GaSb LED with 25 % Indium composition in the InGaSb QW. The peak emission wavelength is 1.68 p. …

FIG. 43

FIG. 43 depicts a conduction band diagram of 10 QW InGaAs/GaAsP photodetector at 2.7 V and 5 V reverse bias. [0097]

FIG. 44

FIG. 44 depicts an ultra-high speed 4 QW GaAs based photodetector structure. [0098]

FIG. 45

FIG. 45 depicts generated current versus wavelength of 4 QW InGaAs/GaAsP detector of L=20 p at 2.7 V. The cutoﬀ wavelength is 1.12 pm. [0099]

FIG. 46

FIG. 46 depicts an ultra-high speed 4 QW InGaAs/GaAsP photodetector of 10 p length with two p+ electrodes on top each of 1 pm. [00100]

FIG. 47

FIG. 47 depicts an ultra-high speed 4 QW InGaAs/GaAsP photodetector of 20 p length with two p+ electrodes on top each of 1 pm. [00101]

FIG. 48

FIG. 48 depicts an ultra-high speed 4 QW InGaAs/GaAsP photodetector of 50 p length with four p+ electrodes on top each of 1 pm. [00102]

FIG. 49

FIG. 49 depicts a generated photo-current at 10 GHz transient response at 2.7 V for single QW InGaAs/GaAsP photodetector of lengths 10 p, 20 p and 50 p. [00103]

FIG. 50

FIG. 50 depicts an ultra-high speed MQW InGaN/A l GaN photodetector. [00104]

FIG. 51

FIG. 51 depicts an ultra-high speed MQW InGaS b/Al GaS b photodetector. [00105]

FIG. 52

FIG. 52 depicts an LED and photodetector integrated in one device. P+ terminal is common to both LED and detector. [00106]

FIG. 53

FIG. 53 depicts an LED and photodetector integrated in one device. n+ terminal is common to both LED and detector. [00107]

FIG. 54

FIG. 54 depicts an emission spectrum of single QW InGaAs/GaAsP LED (23 % In, 45 % P in p-side barrier and 60 % P in n-side barrier) at 1.6 V and 1.9 V. The …

FIG. 55

FIG. 55 depicts a luminous power and eﬃciency of 5x1000 p 2 single QW InGaAs/GaAsP LED (23 % In, 45 % P in p-side barrier and 60 % P in n-side barrier). The …

FIG. 56

FIG. 56 depicts an emission spectrum of single QW InGaAs/GaAsP LED (30 % In, 60 % P in p-side barrier and n-side barrier) at 1.6 V and 1.9 V. The peak emission …

FIG. 57

FIG. 57 depicts a mission spectrum of single QW InGaAs/GaAsP LED (30 % In, 45% P in the barriers) at 1.6 V and 1.8 V. The peak emission wavelength at 1.6 V is …

FIG. 58

FIG. 58 depicts a luminous power and eﬃciency of 1x1000 p 2 single QW InGaAs/GaAsP LED (30 % In in the QW, 45 % P in the barriers). The output luminous power …

FIG. 59

FIG. 59 depicts a 10 GHz transient response at 1.6 V and 1.8 V of single QW InGaAs/GaAsP LED with 30 % Indium in the QW and 45 % P in the barriers. [00113]

FIG. 60

FIG. 60 depicts a wavelength division multiplexing (WDM) system using two LEDs and two photodetectors. [00114]

FIG. 61

FIG. 61 depicts a full duplex (b i-directional) communication system using two LEDs and two photodetectors. [00115]

FIG. 62

FIG. 62 depicts two LEDs emitting light at diﬀerent frequencies integrated into one device. P+/P layers are common to both the LEDs. QW₁ and QW₂ denote the …

FIG. 63

FIG. 63 depicts two LEDs emitting light at diﬀerent frequencies integrated into one device. n+/n layers are common to both the LEDs. QW₁ and QW₂ denote the …

FIG. 64

FIG. 64 depicts a photodetectors design scheme to detect signals of two diﬀerentwavelengths- SVG …

FIG. 65

FIG. 65 depicts an absorption spectra of the photodetectors D 1 and D2. Cutoﬀwavelengths of detector 1 and detector 2 are SVG …

FIG. 66

FIG. 66 depicts three terminal photodetector with two sets of InGaAs QWs of diﬀerent Indium composition. [00120]

FIG. 67

FIG. 67 depicts an absorption spectrum of the three terminal photodetector for incident light with peak emission wavelength of 1070 nm. Maximum absorption …

FIG. 68

FIG. 68 depicts an absorption spectrum of the three terminal photodetector for incident light with peak emission wavelength of 917 nm. Light absorption occurs …

FIG. 69

FIG. 69 depicts a transient response of the three terminal photodetector for incident light with peak emission wavelength of 1070 nm.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

10 independent · 12 dependent

1
Independent
Claims 1-22 Canceled
22
Independent
Canceled
23
IndependentAlGaNAlGaNInGaNGaNGaNlight-emitting diode (LED) for wireless optical communication
A light-emitting diode (LED) for wireless optical communication, the LED comprising: a substrate; a carrier conﬁnement (CC) region positioned over the substrate, the CC region deﬁning: a ﬁrst CC layer comprising aluminum gallium nitride, wherein the ﬁrst CC layer has an aluminum composition between 10% and 45%; and a second CC layer positioned on the ﬁrst CC layer, the second CC layer comprising aluminum gallium nitride, wherein the second CC layer has an aluminum composition between 10% and 45%; an active region positioned over the CC region, wherein: the active region is at least one of a quantum well structure and a multi quantum well structure; the active region comprises indium gallium nitride; the active region has an indium composition between 11% and 15%; the active region has a thickness between 50 and 150 angstroms for each quantum well; and the active region is conﬁgured to have a transient response time of less than 500 picoseconds (ps); a ﬁrst ba rri er layer positioned between the CC region and the active region, wherein: the ﬁrst ba rri er layer has an aluminum composition between 15% and 30%; and the ﬁrst ba rri er layer has a thickness between 25 and 75 angstroms; [[and]] a second barrier layer positioned over the active region; and an n-type contact layer positioned between the substrate and the CC region; and a p-type contact layer positioned over the second ba rri er layer. Currently amended
1. 30
  Dependent← claim 23AlGaNAlGaNlight-emitting diode (LED) for wireless optical communication
  The LED of claim 23 [[29]], wherein the ﬁrst CC layer has a thickness between 100 and 2000 angstroms and the second CC layer has a thickness between 25 and 75 angstroms. Currently amended
2. 32
  Dependent← claim 23light-emitting diode (LED) for wireless optical communication
  The LED of claim 23, wherein the LED is implemented in a ﬂip-chip package. Previously presented
3. 33
  Dependent← claim 23light-emitting diode (LED) for wireless optical communication
  The LED of claim 23, wherein the LED is implemented within an optical transceiver and the optical transceiver further comprises an optical detector. Previously presented
4. 34
  Dependent← claim 23light-emitting diode (LED) for wireless optical communication
  The LED of claim 23, wherein: the LED is conﬁgured to transmit at a ﬁrst wavelength; the LED is a ﬁrst LED within an array of LEDs; and a second LED within the array of LEDs is conﬁgured to operate at a second wavelength. Previously presented
5. 38
  Dependent← claim 23light-emitting diode (LED) for wireless optical communication
  The LED of claim 23, wherein the LED is conﬁgured for variable wavelength modulation. Previously presented
6. 40
  Dependent← claim 23light-emitting diode (LED) for wireless optical communication
  The LED of claim 23, wherein the LED is implemented within an epitaxial structure and the epitaxial structure further comprises an optical detector. Previously presented
24
Independent
Canceled
25
Independent
Canceled
26
Independent
Canceled
27
Independent
Canceled
28
Independent
Canceled
29
Independent
Canceled
42
IndependentAlGaNAlGaNInGaNGaNGaNlight-emitting diode (LED) for wireless optical communication
A method of forming a light-emitting diode (LED) for wireless optical communication, comprising: providing an epitaxial structure on a substrate, the epitaxial structure comprising: a carrier conﬁnement (CC) region positioned over the substrate, the CC region deﬁning: a ﬁrst CC layer comprising aluminum gallium nitride, wherein the ﬁrst CC layer has an aluminum composition between 10% and 45%; and a second CC layer positioned on the ﬁrst CC layer, the second CC layer comprising aluminum gallium nitride, wherein the second CC layer has an aluminum composition between 10% and 45%;; an active region positioned over the CC region, wherein: the active region is at least one of a quantum well structure and a multi quantum well structure; the active region comprises indium gallium nitride; the active region has an indium composition between 11% and 15%; the active region has a thickness between 50 and 150 angstroms for each quantum well; and the active region conﬁgured to have a transient response time of less than 500 picoseconds (ps); a ﬁrst barrier layer positioned between the CC region and the active region, wherein: the ﬁrst barrier layer has an aluminum composition between 15% and 30%; and the ﬁrst barrier layer has a thickness between 25 and 75 angstroms; [[and]] a second barrier layer positioned over the active region; and an n-type contact layer positioned between the substrate and the CC region; and a p-type contact layer positioned over the second barrier layer. Currently amended

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

light-emitting diode (LED) for wireless optical communication

GaNp type contact layer

second_barrier_layersecond barrier layer

InGaNactive region quantum well

AlGaNfirst barrier layer

AlGaNsecond carrier confinement layer

AlGaNfirst carrier confinement layer

Materials

Materials described outside the worked examples.

aluminum gallium nitride (first CC layer)

AlGaN

Carrier Confinement Layer

Barrier Layer

indium gallium nitride (active region)

InGaN

Active Region

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

fet electrical

Fet Electrical

FIG. 7 depicts an electrical equivalent circuit model for the Travelling Wave Wireless Optical Transceiver of

Figure references

FIG. 7

fet electrical

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
active region transient response time (upper bound)	500 ps	InGaN
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Devices, systems, and methods for wireless optical communication using LEDs | Matter42 Literature