Patent
US 9,145,295DESIGN OF ULTRA-FAST SUSPENDED GRAPHENE NANO-SENSORS SUITABLE FOR LARGE SCALE PRODUCTION
Haibing Peng
The University of Houston System·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,145,295Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nano-sensor, comprising: a) a Si wafer; b) a thermal oxide layer disposed on top of the Si wafer; c) a first Cr supporting pad and a second Cr supporting pad disposed on top of the thermal oxide layer, the first and the second supporting pads having a gap between them; d) a first Cu pad disposed on top of the first Cr supporting pad, and a second Cu pad disposed on top of the second Cr supporting pad, the two Cu pads having a Cu strip connecting them; e) a graphene flake connecting the first and second Cu pads and suspended over the gap between the two Cu pads; and f) two metal electrodes electrically connected to the graphene flake.
The graphene nano-sensor of claim 1, wherein the Cr supporting pads have lateral dimensions of from 0.5 p m x 0.5 p m to 1000 p m x 1000 p m, and thickness of from 0.5 nm to 500 nm.
The graphene nano-sensor of claim 1, wherein the gap between the two Cr supporting pads is from 50 nm to 50 p m wide.
The graphene nano-sensor of claim 1, wherein the two Cu pads are from 50 nm to 5000 nm thick.
The graphene nano-sensor of claim 1, wherein the thermal oxide layer is from 10 nm to 5000 nm thick.
The graphene nano-sensor of claim 1, wherein the metal electrodes comprise Pd and Cr.
The graphene nano-sensor of claim 1, wherein the graphene flake is a quasi-two- dim e nsio n al thin film.
826 3745v.2 Attorney Docket No.: 10929 3.000 14 PATENT APPLICATION 8. The graphene nano-sensor of claim 1, wherein the graphene flake comprises a number of graphitic layers.
8263745 v.2 Atto rn ey Docket No.: 109293.00014 PATENT APPLICATION 16. A method of large scale production of suspended graphene devices, comprising the steps of: a) providing a Si wafer; b) depositing a thermal oxide layer on the Si wafer; c) patterning a first Cr supporting pad and a second Cr supporting pad on the thermal oxide l ayer, the first and the second supporting pads having a gap between them; d) patterning a first Cu pad on the first Cr supporting pad, and a second Cu pad on the second Cr supporting pad, the two Cu pads having a Cu strip connecting them; e) growing a graphene flake connecting the first and second Cu pads and suspended over the gap between the two Cu pads; and f) patterning two metal electrodes electrically connected to the graphene flake; and g) etching a portion of the Si and Cu layers.
Layer stacks claimed or described, ordered top of device to substrate.
suspended graphene nano-sensor
Materials described outside the worked examples.
Si wafer
Si
thermal oxide layer
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | >200000 cm2 V-1 s-1 | C |
Raman G-to-G' intensity ratio | ~0.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,145,295Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nano-sensor, comprising: a) a Si wafer; b) a thermal oxide layer disposed on top of the Si wafer; c) a first Cr supporting pad and a second Cr supporting pad disposed on top of the thermal oxide layer, the first and the second supporting pads having a gap between them; d) a first Cu pad disposed on top of the first Cr supporting pad, and a second Cu pad disposed on top of the second Cr supporting pad, the two Cu pads having a Cu strip connecting them; e) a graphene flake connecting the first and second Cu pads and suspended over the gap between the two Cu pads; and f) two metal electrodes electrically connected to the graphene flake.
The graphene nano-sensor of claim 1, wherein the Cr supporting pads have lateral dimensions of from 0.5 p m x 0.5 p m to 1000 p m x 1000 p m, and thickness of from 0.5 nm to 500 nm.
The graphene nano-sensor of claim 1, wherein the gap between the two Cr supporting pads is from 50 nm to 50 p m wide.
The graphene nano-sensor of claim 1, wherein the two Cu pads are from 50 nm to 5000 nm thick.
The graphene nano-sensor of claim 1, wherein the thermal oxide layer is from 10 nm to 5000 nm thick.
The graphene nano-sensor of claim 1, wherein the metal electrodes comprise Pd and Cr.
The graphene nano-sensor of claim 1, wherein the graphene flake is a quasi-two- dim e nsio n al thin film.
826 3745v.2 Attorney Docket No.: 10929 3.000 14 PATENT APPLICATION 8. The graphene nano-sensor of claim 1, wherein the graphene flake comprises a number of graphitic layers.
8263745 v.2 Atto rn ey Docket No.: 109293.00014 PATENT APPLICATION 16. A method of large scale production of suspended graphene devices, comprising the steps of: a) providing a Si wafer; b) depositing a thermal oxide layer on the Si wafer; c) patterning a first Cr supporting pad and a second Cr supporting pad on the thermal oxide l ayer, the first and the second supporting pads having a gap between them; d) patterning a first Cu pad on the first Cr supporting pad, and a second Cu pad on the second Cr supporting pad, the two Cu pads having a Cu strip connecting them; e) growing a graphene flake connecting the first and second Cu pads and suspended over the gap between the two Cu pads; and f) patterning two metal electrodes electrically connected to the graphene flake; and g) etching a portion of the Si and Cu layers.
Layer stacks claimed or described, ordered top of device to substrate.
suspended graphene nano-sensor
Materials described outside the worked examples.
Si wafer
Si
thermal oxide layer
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | >200000 cm2 V-1 s-1 | C |
Raman G-to-G' intensity ratio | ~0.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,145,295Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nano-sensor, comprising: a) a Si wafer; b) a thermal oxide layer disposed on top of the Si wafer; c) a first Cr supporting pad and a second Cr supporting pad disposed on top of the thermal oxide layer, the first and the second supporting pads having a gap between them; d) a first Cu pad disposed on top of the first Cr supporting pad, and a second Cu pad disposed on top of the second Cr supporting pad, the two Cu pads having a Cu strip connecting them; e) a graphene flake connecting the first and second Cu pads and suspended over the gap between the two Cu pads; and f) two metal electrodes electrically connected to the graphene flake.
The graphene nano-sensor of claim 1, wherein the Cr supporting pads have lateral dimensions of from 0.5 p m x 0.5 p m to 1000 p m x 1000 p m, and thickness of from 0.5 nm to 500 nm.
The graphene nano-sensor of claim 1, wherein the gap between the two Cr supporting pads is from 50 nm to 50 p m wide.
The graphene nano-sensor of claim 1, wherein the two Cu pads are from 50 nm to 5000 nm thick.
The graphene nano-sensor of claim 1, wherein the thermal oxide layer is from 10 nm to 5000 nm thick.
The graphene nano-sensor of claim 1, wherein the metal electrodes comprise Pd and Cr.
The graphene nano-sensor of claim 1, wherein the graphene flake is a quasi-two- dim e nsio n al thin film.
826 3745v.2 Attorney Docket No.: 10929 3.000 14 PATENT APPLICATION 8. The graphene nano-sensor of claim 1, wherein the graphene flake comprises a number of graphitic layers.
8263745 v.2 Atto rn ey Docket No.: 109293.00014 PATENT APPLICATION 16. A method of large scale production of suspended graphene devices, comprising the steps of: a) providing a Si wafer; b) depositing a thermal oxide layer on the Si wafer; c) patterning a first Cr supporting pad and a second Cr supporting pad on the thermal oxide l ayer, the first and the second supporting pads having a gap between them; d) patterning a first Cu pad on the first Cr supporting pad, and a second Cu pad on the second Cr supporting pad, the two Cu pads having a Cu strip connecting them; e) growing a graphene flake connecting the first and second Cu pads and suspended over the gap between the two Cu pads; and f) patterning two metal electrodes electrically connected to the graphene flake; and g) etching a portion of the Si and Cu layers.
Layer stacks claimed or described, ordered top of device to substrate.
suspended graphene nano-sensor
Materials described outside the worked examples.
Si wafer
Si
thermal oxide layer
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | >200000 cm2 V-1 s-1 | C |
Raman G-to-G' intensity ratio | ~0.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,145,295Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nano-sensor, comprising: a) a Si wafer; b) a thermal oxide layer disposed on top of the Si wafer; c) a first Cr supporting pad and a second Cr supporting pad disposed on top of the thermal oxide layer, the first and the second supporting pads having a gap between them; d) a first Cu pad disposed on top of the first Cr supporting pad, and a second Cu pad disposed on top of the second Cr supporting pad, the two Cu pads having a Cu strip connecting them; e) a graphene flake connecting the first and second Cu pads and suspended over the gap between the two Cu pads; and f) two metal electrodes electrically connected to the graphene flake.
The graphene nano-sensor of claim 1, wherein the Cr supporting pads have lateral dimensions of from 0.5 p m x 0.5 p m to 1000 p m x 1000 p m, and thickness of from 0.5 nm to 500 nm.
The graphene nano-sensor of claim 1, wherein the gap between the two Cr supporting pads is from 50 nm to 50 p m wide.
The graphene nano-sensor of claim 1, wherein the two Cu pads are from 50 nm to 5000 nm thick.
The graphene nano-sensor of claim 1, wherein the thermal oxide layer is from 10 nm to 5000 nm thick.
The graphene nano-sensor of claim 1, wherein the metal electrodes comprise Pd and Cr.
The graphene nano-sensor of claim 1, wherein the graphene flake is a quasi-two- dim e nsio n al thin film.
826 3745v.2 Attorney Docket No.: 10929 3.000 14 PATENT APPLICATION 8. The graphene nano-sensor of claim 1, wherein the graphene flake comprises a number of graphitic layers.
8263745 v.2 Atto rn ey Docket No.: 109293.00014 PATENT APPLICATION 16. A method of large scale production of suspended graphene devices, comprising the steps of: a) providing a Si wafer; b) depositing a thermal oxide layer on the Si wafer; c) patterning a first Cr supporting pad and a second Cr supporting pad on the thermal oxide l ayer, the first and the second supporting pads having a gap between them; d) patterning a first Cu pad on the first Cr supporting pad, and a second Cu pad on the second Cr supporting pad, the two Cu pads having a Cu strip connecting them; e) growing a graphene flake connecting the first and second Cu pads and suspended over the gap between the two Cu pads; and f) patterning two metal electrodes electrically connected to the graphene flake; and g) etching a portion of the Si and Cu layers.
Layer stacks claimed or described, ordered top of device to substrate.
suspended graphene nano-sensor
Materials described outside the worked examples.
Si wafer
Si
thermal oxide layer
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | >200000 cm2 V-1 s-1 | C |
Raman G-to-G' intensity ratio | ~0.5 |
Related documents with shared materials, methods, properties, or citations.
Cr supporting pad
Cr
Cu pad
Cu
metal electrodes (Pd/Cr)
graphene flake
C
G' band center (Raman) | ~2687.9 cm⁻¹ | C |
G' band FWHM (Raman) | ~34 cm⁻¹ | C |
Thickness | 10–5000 nm | — |
Thickness | 0.5–500 nm | — |
Thickness | 50–5000 nm | — |
Cr supporting pad
Cr
Cu pad
Cu
metal electrodes (Pd/Cr)
graphene flake
C
G' band center (Raman) | ~2687.9 cm⁻¹ | C |
G' band FWHM (Raman) | ~34 cm⁻¹ | C |
Thickness | 10–5000 nm | — |
Thickness | 0.5–500 nm | — |
Thickness | 50–5000 nm | — |
Cr supporting pad
Cr
Cu pad
Cu
metal electrodes (Pd/Cr)
graphene flake
C
G' band center (Raman) | ~2687.9 cm⁻¹ | C |
G' band FWHM (Raman) | ~34 cm⁻¹ | C |
Thickness | 10–5000 nm | — |
Thickness | 0.5–500 nm | — |
Thickness | 50–5000 nm | — |
Cr supporting pad
Cr
Cu pad
Cu
metal electrodes (Pd/Cr)
graphene flake
C
G' band center (Raman) | ~2687.9 cm⁻¹ | C |
G' band FWHM (Raman) | ~34 cm⁻¹ | C |
Thickness | 10–5000 nm | — |
Thickness | 0.5–500 nm | — |
Thickness | 50–5000 nm | — |