Patent
US 9,803,292BARRIER GUIDED GROWTH OF MICROSTRUCTURED AND NANOSTRUCTURED GRAPHENE AND GRAPHITE
Michael S. Arnold
US
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Patent
Atlas literature
Patent
US 9,803,292Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Schematic of the barrier-guided chemical vapor deposition (BG-CVD) graphene growth process: (i) a carbon precursor molecule, such as methane, …
FIG. 2. Shows a schematic illustration of a method for forming a graphene- growth barrier on a graphene-growth substrate surface using block copolymer …
FIG. 3. Shows a schematic illustration of BG-CVD graphene growth with a 60 p m square aluminum oxide barrier 302 on a Cu substrate 304, (a); graphene 306 …
FIG. 4. SEM image of a BG-CVD-fabricated M. C. Escher pattern in graphene on a Si/Si₀ 2 substrate. The graphene is seen as darker grey and the Si/Si₀ 2 …
FIG. 5. Schematic of a hexagonal graphene crystallite growing around a graphene-growth barrier having a nanodot pattern on a graphene-growth surface. [0018]
FIG. 6. Schematic of the barrier-guided growth of a multilayered graphene material.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for growing multilayered patterned, single- crystalline graphene comprising: depositing a graphene growth barrier that defines a pattern directly on a graphene growth catalyst surface; and growing multiple sheets of graphene in a vertical stack directly on the graphene growth catalyst surface, wherein the graphene sheets are grown directly, laterally next to and around the graphene growth barrier and the vertical stack of graphene is grown to a height that exceeds height of the graphene growth barrier; and further wherein each new sheet of graphene in the vertical stack forms at the bottom of the vertical stack and the sheets of g raphene that are at a height that exceeds the height of the graphene growth barrier do not grow laterally, whereby a same pattern that is defined by the graphene growth barrier is also defined in all of the sheets of g raphene in the stack. Currently amended
The method of claim 1, wherein the growth barrier comprises aluminum oxide. Original
The method of claim 1, wherein depositing a graphene growth barrier comprises transferring a pre-patterned graphene growth barrier template onto the graphene growth catalyst surface, depositing the graphene growth barrier onto the graphene growth catalyst surface around the prepatterned graphene growth barrier template, and removing the pre-patterned graphene growth barrier template. Previously presented
The method of claim 1, wherein the graphene grown on the graphene growth catalyst surface comprises one or more single-crystalline domains having an area of at least 10 pm 2. Previously presented
The method of claim 1, wherein the pattern in the graphene grown on the graphene growth catalyst surface has a feature with at least one lateral dimension of 5 nm or smaller. Previously presented
The method of claim 1, wherein the single-crystalline graphene comprises at least 10 sheets of graphene. Previously presented
The method of claim 1, wherein the single-crystalline graphene comprises at least 1000 sheet of graphene. Previously presented
2-4. Canceled
Canceled
Canceled
Canceled
13-14. Canceled
Canceled
Materials described outside the worked examples.
single-crystalline graphene
graphene growth barrier (aluminum oxide)
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4. SEM image of a BG-CVD-fabricated M. C. Escher pattern in graphene on a Si/Si₀ 2 substrate. The graphene is seen as darker grey and the Si/Si₀ 2 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
single-crystalline domain lateral dimension | ≥ 2 µm | single-crystalline graphene |
Thickness | 1–100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,803,292Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Schematic of the barrier-guided chemical vapor deposition (BG-CVD) graphene growth process: (i) a carbon precursor molecule, such as methane, …
FIG. 2. Shows a schematic illustration of a method for forming a graphene- growth barrier on a graphene-growth substrate surface using block copolymer …
FIG. 3. Shows a schematic illustration of BG-CVD graphene growth with a 60 p m square aluminum oxide barrier 302 on a Cu substrate 304, (a); graphene 306 …
FIG. 4. SEM image of a BG-CVD-fabricated M. C. Escher pattern in graphene on a Si/Si₀ 2 substrate. The graphene is seen as darker grey and the Si/Si₀ 2 …
FIG. 5. Schematic of a hexagonal graphene crystallite growing around a graphene-growth barrier having a nanodot pattern on a graphene-growth surface. [0018]
FIG. 6. Schematic of the barrier-guided growth of a multilayered graphene material.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for growing multilayered patterned, single- crystalline graphene comprising: depositing a graphene growth barrier that defines a pattern directly on a graphene growth catalyst surface; and growing multiple sheets of graphene in a vertical stack directly on the graphene growth catalyst surface, wherein the graphene sheets are grown directly, laterally next to and around the graphene growth barrier and the vertical stack of graphene is grown to a height that exceeds height of the graphene growth barrier; and further wherein each new sheet of graphene in the vertical stack forms at the bottom of the vertical stack and the sheets of g raphene that are at a height that exceeds the height of the graphene growth barrier do not grow laterally, whereby a same pattern that is defined by the graphene growth barrier is also defined in all of the sheets of g raphene in the stack. Currently amended
The method of claim 1, wherein the growth barrier comprises aluminum oxide. Original
The method of claim 1, wherein depositing a graphene growth barrier comprises transferring a pre-patterned graphene growth barrier template onto the graphene growth catalyst surface, depositing the graphene growth barrier onto the graphene growth catalyst surface around the prepatterned graphene growth barrier template, and removing the pre-patterned graphene growth barrier template. Previously presented
The method of claim 1, wherein the graphene grown on the graphene growth catalyst surface comprises one or more single-crystalline domains having an area of at least 10 pm 2. Previously presented
The method of claim 1, wherein the pattern in the graphene grown on the graphene growth catalyst surface has a feature with at least one lateral dimension of 5 nm or smaller. Previously presented
The method of claim 1, wherein the single-crystalline graphene comprises at least 10 sheets of graphene. Previously presented
The method of claim 1, wherein the single-crystalline graphene comprises at least 1000 sheet of graphene. Previously presented
2-4. Canceled
Canceled
Canceled
Canceled
13-14. Canceled
Canceled
Materials described outside the worked examples.
single-crystalline graphene
graphene growth barrier (aluminum oxide)
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4. SEM image of a BG-CVD-fabricated M. C. Escher pattern in graphene on a Si/Si₀ 2 substrate. The graphene is seen as darker grey and the Si/Si₀ 2 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
single-crystalline domain lateral dimension | ≥ 2 µm | single-crystalline graphene |
Thickness | 1–100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,803,292Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Schematic of the barrier-guided chemical vapor deposition (BG-CVD) graphene growth process: (i) a carbon precursor molecule, such as methane, …
FIG. 2. Shows a schematic illustration of a method for forming a graphene- growth barrier on a graphene-growth substrate surface using block copolymer …
FIG. 3. Shows a schematic illustration of BG-CVD graphene growth with a 60 p m square aluminum oxide barrier 302 on a Cu substrate 304, (a); graphene 306 …
FIG. 4. SEM image of a BG-CVD-fabricated M. C. Escher pattern in graphene on a Si/Si₀ 2 substrate. The graphene is seen as darker grey and the Si/Si₀ 2 …
FIG. 5. Schematic of a hexagonal graphene crystallite growing around a graphene-growth barrier having a nanodot pattern on a graphene-growth surface. [0018]
FIG. 6. Schematic of the barrier-guided growth of a multilayered graphene material.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for growing multilayered patterned, single- crystalline graphene comprising: depositing a graphene growth barrier that defines a pattern directly on a graphene growth catalyst surface; and growing multiple sheets of graphene in a vertical stack directly on the graphene growth catalyst surface, wherein the graphene sheets are grown directly, laterally next to and around the graphene growth barrier and the vertical stack of graphene is grown to a height that exceeds height of the graphene growth barrier; and further wherein each new sheet of graphene in the vertical stack forms at the bottom of the vertical stack and the sheets of g raphene that are at a height that exceeds the height of the graphene growth barrier do not grow laterally, whereby a same pattern that is defined by the graphene growth barrier is also defined in all of the sheets of g raphene in the stack. Currently amended
The method of claim 1, wherein the growth barrier comprises aluminum oxide. Original
The method of claim 1, wherein depositing a graphene growth barrier comprises transferring a pre-patterned graphene growth barrier template onto the graphene growth catalyst surface, depositing the graphene growth barrier onto the graphene growth catalyst surface around the prepatterned graphene growth barrier template, and removing the pre-patterned graphene growth barrier template. Previously presented
The method of claim 1, wherein the graphene grown on the graphene growth catalyst surface comprises one or more single-crystalline domains having an area of at least 10 pm 2. Previously presented
The method of claim 1, wherein the pattern in the graphene grown on the graphene growth catalyst surface has a feature with at least one lateral dimension of 5 nm or smaller. Previously presented
The method of claim 1, wherein the single-crystalline graphene comprises at least 10 sheets of graphene. Previously presented
The method of claim 1, wherein the single-crystalline graphene comprises at least 1000 sheet of graphene. Previously presented
2-4. Canceled
Canceled
Canceled
Canceled
13-14. Canceled
Canceled
Materials described outside the worked examples.
single-crystalline graphene
graphene growth barrier (aluminum oxide)
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4. SEM image of a BG-CVD-fabricated M. C. Escher pattern in graphene on a Si/Si₀ 2 substrate. The graphene is seen as darker grey and the Si/Si₀ 2 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
single-crystalline domain lateral dimension | ≥ 2 µm | single-crystalline graphene |
Thickness | 1–100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,803,292Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Schematic of the barrier-guided chemical vapor deposition (BG-CVD) graphene growth process: (i) a carbon precursor molecule, such as methane, …
FIG. 2. Shows a schematic illustration of a method for forming a graphene- growth barrier on a graphene-growth substrate surface using block copolymer …
FIG. 3. Shows a schematic illustration of BG-CVD graphene growth with a 60 p m square aluminum oxide barrier 302 on a Cu substrate 304, (a); graphene 306 …
FIG. 4. SEM image of a BG-CVD-fabricated M. C. Escher pattern in graphene on a Si/Si₀ 2 substrate. The graphene is seen as darker grey and the Si/Si₀ 2 …
FIG. 5. Schematic of a hexagonal graphene crystallite growing around a graphene-growth barrier having a nanodot pattern on a graphene-growth surface. [0018]
FIG. 6. Schematic of the barrier-guided growth of a multilayered graphene material.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for growing multilayered patterned, single- crystalline graphene comprising: depositing a graphene growth barrier that defines a pattern directly on a graphene growth catalyst surface; and growing multiple sheets of graphene in a vertical stack directly on the graphene growth catalyst surface, wherein the graphene sheets are grown directly, laterally next to and around the graphene growth barrier and the vertical stack of graphene is grown to a height that exceeds height of the graphene growth barrier; and further wherein each new sheet of graphene in the vertical stack forms at the bottom of the vertical stack and the sheets of g raphene that are at a height that exceeds the height of the graphene growth barrier do not grow laterally, whereby a same pattern that is defined by the graphene growth barrier is also defined in all of the sheets of g raphene in the stack. Currently amended
The method of claim 1, wherein the growth barrier comprises aluminum oxide. Original
The method of claim 1, wherein depositing a graphene growth barrier comprises transferring a pre-patterned graphene growth barrier template onto the graphene growth catalyst surface, depositing the graphene growth barrier onto the graphene growth catalyst surface around the prepatterned graphene growth barrier template, and removing the pre-patterned graphene growth barrier template. Previously presented
The method of claim 1, wherein the graphene grown on the graphene growth catalyst surface comprises one or more single-crystalline domains having an area of at least 10 pm 2. Previously presented
The method of claim 1, wherein the pattern in the graphene grown on the graphene growth catalyst surface has a feature with at least one lateral dimension of 5 nm or smaller. Previously presented
The method of claim 1, wherein the single-crystalline graphene comprises at least 10 sheets of graphene. Previously presented
The method of claim 1, wherein the single-crystalline graphene comprises at least 1000 sheet of graphene. Previously presented
2-4. Canceled
Canceled
Canceled
Canceled
13-14. Canceled
Canceled
Materials described outside the worked examples.
single-crystalline graphene
graphene growth barrier (aluminum oxide)
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4. SEM image of a BG-CVD-fabricated M. C. Escher pattern in graphene on a Si/Si₀ 2 substrate. The graphene is seen as darker grey and the Si/Si₀ 2 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
single-crystalline domain lateral dimension | ≥ 2 µm | single-crystalline graphene |
Thickness | 1–100 nm |
Related documents with shared materials, methods, properties, or citations.
graphene growth catalyst
self-assembled block copolymer film
copper
Cu
methane
CH₄
| — |
Thickness | 5–20 nm | — |
Pressure | 0172-02 bar | — |
Temperature | ≤ 700 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 5 nm | — |
graphene growth catalyst
self-assembled block copolymer film
copper
Cu
methane
CH₄
| — |
Thickness | 5–20 nm | — |
Pressure | 0172-02 bar | — |
Temperature | ≤ 700 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 5 nm | — |
graphene growth catalyst
self-assembled block copolymer film
copper
Cu
methane
CH₄
| — |
Thickness | 5–20 nm | — |
Pressure | 0172-02 bar | — |
Temperature | ≤ 700 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 5 nm | — |
graphene growth catalyst
self-assembled block copolymer film
copper
Cu
methane
CH₄
| — |
Thickness | 5–20 nm | — |
Pressure | 0172-02 bar | — |
Temperature | ≤ 700 °C | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 5 nm | — |