Patent
US 9,938,151ALTERATION OF GRAPHENE DEFECTS
SETH ADRIAN MILLER
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,938,151Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-10.. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A system effective to at least partially alter a defect area in a layer on a substrate, wherein the layer includes graphene, the system comprising: a chamber configured effective to receive [[a]]tlhe layer on the substrate placed in the chamber, wherein the layer includes at least some graphene, and at least some defect areas in the graphene, wherein the at least some defect areas are effective to reveal exposed areas of the substrate; and a container configured in communication with the chamber; wherein the chamber and the container are configured effective to _: react the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas; adhere graphene oxide to the at least one cationic area to produce a graphene oxide layer; and reduce the graphene oxide layer to produce at least one altered defect area in the layer.
The system as recited in claim 11, wherein the substrate includes at least one of plastic, Si O 2, glass, gold, silver, and/or polyethylene terephthalate.
The system as recited in claim 11, wherein the substrate includes silicon: and wherein the chamber and the container are further configured to apply aminopropyltriethoxysilane to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply an amine terminated material to the substrate such that the Page 2 of 7 Application Serial No.: 14/657,886 Response to Restriction Requirement mailed on: Docket No.: M-6300.042 DIV substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, wherein the chamber and the container are further configured to apply an amine terminated siloxane to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply polyethylenimine to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, further comprising: an electrode configured in operative relationship with the chamber, wherein the electrode is effective to produce a corona discharge, the corona discharge being effective to produce carboxylic acid functionalities on the substrate; and wherein the chamber and the container are further configured to apply polyethylenimine to the carboxylic acid functionalities such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, wherein the chamber and the container are further configured to apply a solution of the graphene oxide and water to the substrate such that the substrate reacts under sufficient reaction conditions to adhere the graphene oxide to the at least one cationic area to produce [[a]]the graphene oxide layer.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply a solution including hydrazine to the graphene oxide layer such that the substrate reacts under sufficient reaction conditions to reduce the graphene oxide layer. Page 3 of 7 Application Serial No.: 14/657,886 Response to Restriction Requirement mailed on: Docket No.: M-6300.042 DIV
The system as recited in claim 11, wherein the chamber and the container are configured to apply a solution including sodium borohydride to the graphene oxide layer such that the substrate reacts under sufficient reaction conditions to reduce the graphene oxide layer.
(Withdrawn-Currently Amended) A processed layer comprising: at least some graphene on a substrate; at least one defect area in the graphene, the at least one defect area being effective to reveal a cationic area of the substrate; and a reduced area.
(Withdrawn-Currently Amended) The processed substrate includes at least one of plastic, SiO 2, terephthalate. Page 4 of 7 graphene oxide layer adhered to the cationic layer as recited in claim 21, wherein the glass, gold, silver, and/or polyethylene
Layer stacks claimed or described, ordered top of device to substrate.
graphene defect alteration system
processed layer (graphene on substrate with reduced defect area)
Materials described outside the worked examples.
graphene
graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,938,151Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-10.. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A system effective to at least partially alter a defect area in a layer on a substrate, wherein the layer includes graphene, the system comprising: a chamber configured effective to receive [[a]]tlhe layer on the substrate placed in the chamber, wherein the layer includes at least some graphene, and at least some defect areas in the graphene, wherein the at least some defect areas are effective to reveal exposed areas of the substrate; and a container configured in communication with the chamber; wherein the chamber and the container are configured effective to _: react the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas; adhere graphene oxide to the at least one cationic area to produce a graphene oxide layer; and reduce the graphene oxide layer to produce at least one altered defect area in the layer.
The system as recited in claim 11, wherein the substrate includes at least one of plastic, Si O 2, glass, gold, silver, and/or polyethylene terephthalate.
The system as recited in claim 11, wherein the substrate includes silicon: and wherein the chamber and the container are further configured to apply aminopropyltriethoxysilane to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply an amine terminated material to the substrate such that the Page 2 of 7 Application Serial No.: 14/657,886 Response to Restriction Requirement mailed on: Docket No.: M-6300.042 DIV substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, wherein the chamber and the container are further configured to apply an amine terminated siloxane to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply polyethylenimine to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, further comprising: an electrode configured in operative relationship with the chamber, wherein the electrode is effective to produce a corona discharge, the corona discharge being effective to produce carboxylic acid functionalities on the substrate; and wherein the chamber and the container are further configured to apply polyethylenimine to the carboxylic acid functionalities such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, wherein the chamber and the container are further configured to apply a solution of the graphene oxide and water to the substrate such that the substrate reacts under sufficient reaction conditions to adhere the graphene oxide to the at least one cationic area to produce [[a]]the graphene oxide layer.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply a solution including hydrazine to the graphene oxide layer such that the substrate reacts under sufficient reaction conditions to reduce the graphene oxide layer. Page 3 of 7 Application Serial No.: 14/657,886 Response to Restriction Requirement mailed on: Docket No.: M-6300.042 DIV
The system as recited in claim 11, wherein the chamber and the container are configured to apply a solution including sodium borohydride to the graphene oxide layer such that the substrate reacts under sufficient reaction conditions to reduce the graphene oxide layer.
(Withdrawn-Currently Amended) A processed layer comprising: at least some graphene on a substrate; at least one defect area in the graphene, the at least one defect area being effective to reveal a cationic area of the substrate; and a reduced area.
(Withdrawn-Currently Amended) The processed substrate includes at least one of plastic, SiO 2, terephthalate. Page 4 of 7 graphene oxide layer adhered to the cationic layer as recited in claim 21, wherein the glass, gold, silver, and/or polyethylene
Layer stacks claimed or described, ordered top of device to substrate.
graphene defect alteration system
processed layer (graphene on substrate with reduced defect area)
Materials described outside the worked examples.
graphene
graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,938,151Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-10.. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A system effective to at least partially alter a defect area in a layer on a substrate, wherein the layer includes graphene, the system comprising: a chamber configured effective to receive [[a]]tlhe layer on the substrate placed in the chamber, wherein the layer includes at least some graphene, and at least some defect areas in the graphene, wherein the at least some defect areas are effective to reveal exposed areas of the substrate; and a container configured in communication with the chamber; wherein the chamber and the container are configured effective to _: react the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas; adhere graphene oxide to the at least one cationic area to produce a graphene oxide layer; and reduce the graphene oxide layer to produce at least one altered defect area in the layer.
The system as recited in claim 11, wherein the substrate includes at least one of plastic, Si O 2, glass, gold, silver, and/or polyethylene terephthalate.
The system as recited in claim 11, wherein the substrate includes silicon: and wherein the chamber and the container are further configured to apply aminopropyltriethoxysilane to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply an amine terminated material to the substrate such that the Page 2 of 7 Application Serial No.: 14/657,886 Response to Restriction Requirement mailed on: Docket No.: M-6300.042 DIV substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, wherein the chamber and the container are further configured to apply an amine terminated siloxane to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply polyethylenimine to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, further comprising: an electrode configured in operative relationship with the chamber, wherein the electrode is effective to produce a corona discharge, the corona discharge being effective to produce carboxylic acid functionalities on the substrate; and wherein the chamber and the container are further configured to apply polyethylenimine to the carboxylic acid functionalities such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, wherein the chamber and the container are further configured to apply a solution of the graphene oxide and water to the substrate such that the substrate reacts under sufficient reaction conditions to adhere the graphene oxide to the at least one cationic area to produce [[a]]the graphene oxide layer.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply a solution including hydrazine to the graphene oxide layer such that the substrate reacts under sufficient reaction conditions to reduce the graphene oxide layer. Page 3 of 7 Application Serial No.: 14/657,886 Response to Restriction Requirement mailed on: Docket No.: M-6300.042 DIV
The system as recited in claim 11, wherein the chamber and the container are configured to apply a solution including sodium borohydride to the graphene oxide layer such that the substrate reacts under sufficient reaction conditions to reduce the graphene oxide layer.
(Withdrawn-Currently Amended) A processed layer comprising: at least some graphene on a substrate; at least one defect area in the graphene, the at least one defect area being effective to reveal a cationic area of the substrate; and a reduced area.
(Withdrawn-Currently Amended) The processed substrate includes at least one of plastic, SiO 2, terephthalate. Page 4 of 7 graphene oxide layer adhered to the cationic layer as recited in claim 21, wherein the glass, gold, silver, and/or polyethylene
Layer stacks claimed or described, ordered top of device to substrate.
graphene defect alteration system
processed layer (graphene on substrate with reduced defect area)
Materials described outside the worked examples.
graphene
graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,938,151Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-10.. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A system effective to at least partially alter a defect area in a layer on a substrate, wherein the layer includes graphene, the system comprising: a chamber configured effective to receive [[a]]tlhe layer on the substrate placed in the chamber, wherein the layer includes at least some graphene, and at least some defect areas in the graphene, wherein the at least some defect areas are effective to reveal exposed areas of the substrate; and a container configured in communication with the chamber; wherein the chamber and the container are configured effective to _: react the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas; adhere graphene oxide to the at least one cationic area to produce a graphene oxide layer; and reduce the graphene oxide layer to produce at least one altered defect area in the layer.
The system as recited in claim 11, wherein the substrate includes at least one of plastic, Si O 2, glass, gold, silver, and/or polyethylene terephthalate.
The system as recited in claim 11, wherein the substrate includes silicon: and wherein the chamber and the container are further configured to apply aminopropyltriethoxysilane to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply an amine terminated material to the substrate such that the Page 2 of 7 Application Serial No.: 14/657,886 Response to Restriction Requirement mailed on: Docket No.: M-6300.042 DIV substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, wherein the chamber and the container are further configured to apply an amine terminated siloxane to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply polyethylenimine to the substrate such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, further comprising: an electrode configured in operative relationship with the chamber, wherein the electrode is effective to produce a corona discharge, the corona discharge being effective to produce carboxylic acid functionalities on the substrate; and wherein the chamber and the container are further configured to apply polyethylenimine to the carboxylic acid functionalities such that the substrate reacts under sufficient reaction conditions to produce the at least one cationic area in the at least one of the exposed areas. withdrawn
The system as recited in claim 11, wherein the chamber and the container are further configured to apply a solution of the graphene oxide and water to the substrate such that the substrate reacts under sufficient reaction conditions to adhere the graphene oxide to the at least one cationic area to produce [[a]]the graphene oxide layer.
The system as recited in claim 11, wherein the chamber and the container are further configured to apply a solution including hydrazine to the graphene oxide layer such that the substrate reacts under sufficient reaction conditions to reduce the graphene oxide layer. Page 3 of 7 Application Serial No.: 14/657,886 Response to Restriction Requirement mailed on: Docket No.: M-6300.042 DIV
The system as recited in claim 11, wherein the chamber and the container are configured to apply a solution including sodium borohydride to the graphene oxide layer such that the substrate reacts under sufficient reaction conditions to reduce the graphene oxide layer.
(Withdrawn-Currently Amended) A processed layer comprising: at least some graphene on a substrate; at least one defect area in the graphene, the at least one defect area being effective to reveal a cationic area of the substrate; and a reduced area.
(Withdrawn-Currently Amended) The processed substrate includes at least one of plastic, SiO 2, terephthalate. Page 4 of 7 graphene oxide layer adhered to the cationic layer as recited in claim 21, wherein the glass, gold, silver, and/or polyethylene
Layer stacks claimed or described, ordered top of device to substrate.
graphene defect alteration system
processed layer (graphene on substrate with reduced defect area)
Materials described outside the worked examples.
graphene
graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
reduced graphene oxide
substrate material (plastic, SiO2, glass, gold, silver, polyethylene terephthalate)
silicon
Si
aminopropyltriethoxysilane
amine terminated material
amine terminated siloxane
polyethylenimine
carboxylic acid functionalities
water
H₂O
hydrazine
N₂H₄
sodium borohydride
NaBH₄
aminopropyltriethoxysilane (APTS)
polyethylenimine (PEI)
| 2–4 hours |
| — |
Pressure | 0.5–2 atm | — |
METHOD OF PREPARING NITROGEN-DOPED GRAPHENE AND METHOD OF PRODUCING COMPOSITE HEAT DISPATCHING PLATE THEREOF
reduced graphene oxide
substrate material (plastic, SiO2, glass, gold, silver, polyethylene terephthalate)
silicon
Si
aminopropyltriethoxysilane
amine terminated material
amine terminated siloxane
polyethylenimine
carboxylic acid functionalities
water
H₂O
hydrazine
N₂H₄
sodium borohydride
NaBH₄
aminopropyltriethoxysilane (APTS)
polyethylenimine (PEI)
| 2–4 hours |
| — |
Pressure | 0.5–2 atm | — |
METHOD OF PREPARING NITROGEN-DOPED GRAPHENE AND METHOD OF PRODUCING COMPOSITE HEAT DISPATCHING PLATE THEREOF
reduced graphene oxide
substrate material (plastic, SiO2, glass, gold, silver, polyethylene terephthalate)
silicon
Si
aminopropyltriethoxysilane
amine terminated material
amine terminated siloxane
polyethylenimine
carboxylic acid functionalities
water
H₂O
hydrazine
N₂H₄
sodium borohydride
NaBH₄
aminopropyltriethoxysilane (APTS)
polyethylenimine (PEI)
| 2–4 hours |
| — |
Pressure | 0.5–2 atm | — |
METHOD OF PREPARING NITROGEN-DOPED GRAPHENE AND METHOD OF PRODUCING COMPOSITE HEAT DISPATCHING PLATE THEREOF
reduced graphene oxide
substrate material (plastic, SiO2, glass, gold, silver, polyethylene terephthalate)
silicon
Si
aminopropyltriethoxysilane
amine terminated material
amine terminated siloxane
polyethylenimine
carboxylic acid functionalities
water
H₂O
hydrazine
N₂H₄
sodium borohydride
NaBH₄
aminopropyltriethoxysilane (APTS)
polyethylenimine (PEI)
| 2–4 hours |
| — |
Pressure | 0.5–2 atm | — |
METHOD OF PREPARING NITROGEN-DOPED GRAPHENE AND METHOD OF PRODUCING COMPOSITE HEAT DISPATCHING PLATE THEREOF