Patent
AlGaAs/GaAs SOLAR CELL WITH BACK-SURFACE ALTERNATING CONTACTS (GaAs BAC Solar Cell)
Sherif Michael, Joseph E. O'Connor
US
Copyright © 2026 Matter42. All rights reserved.
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an embodiment of the BAC Solar Cell. [00013]
FIG. 2 illustrates current density and voltage for an embodiment of the BAC Solar 4 20160011 Cell. [00014]
FIG. 3 illustrates Conduction Band (CB) and Valence Band (VB) level through another embodiment of the BAC Solar Cell. [00015] Embodiments in accordance with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Back-surface, Alternating Contact (BAC) solar cell comprising: a window layer comprising AlGaAs doped to a first conductivity type; an absorption layer contacting the window layer where the absorption layer comprises GaAs doped to the first conductivity type; a BSF layer contacting [[to]] the absorption layer and separated from the window layer by the absorption layer, where the BSF layer comprises AlGaAs doped to the first conductivity type; a BSF-contact layer contacting [[to]] the BSF layer adsorption layer and separated from the absorption adsorption layer by the BSF layer, where the BSF-contact layer comprises GaAs doped to the first conductivity type; a first contact coupled to the BSF-contact layer and separated from the BSF layer by the BSF-contact layer; an emitter layer contacting [[to]] the absorption adsorption layer and separated from the window layer by the absorption layer, and the emitter layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter layer comprises GaAs doped to a second conductivity type; a heterojunction layer contacting [[to]] the emitter layer and separated from the absorption layer by the emitter layer, and heterojunction layer displaced from the BSF layer, the -2- App l. No. 15/207,128 Preliminary Amendment dated BSF-contact layer, and the first metal contact, where the heterojunction layer comprises AlGaAs doped to the second conductivity type; a emitter-contact layer contacting [[to]] the heterojunction layer and separated from the emitter layer by the heterojunction layer, and the emitter-contact layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter-contact layer comprises GaAs doped to the second conductivity type; and a second contact coupled to the emitter-contact layer and separated from the heterojunction layer by the emitter-contact layer.
The BAC solar cell of claim 1 where: a doping concentration of the GaAs comprising the absorption layer is less than a doping concentration of the AlGaAs comprising the window layer; a doping concentration of the AlGaAs comprising the heterojunction layer is greater than a doping concentration of the GaAs comprising the emitter layer; and a doping concentration of the GaAs comprising the emitter-contact layer is greater than the doping concentration of the AlGaAs comprising the heterojunction layer.
The BAC solar cell of claim 1 where: a depth of the window layer is greater than 20 nm and less than 40 nm; a depth of the absorption layer is greater than 1000 nm and less than 3000 nm; a depth of the BSF layer is greater than 20 nm and less than 40 nm; a depth of the BSF-contact layer is greater than 20 nm and less than 40 nm; a depth of the emitter layer is greater than 120 nm and less than 180 nm; a depth of the heterojunction layer is greater than 30 nm and less than 50 nm; and a depth of the emitter-contact layer is greater than 20 nm and less than 40 nm.
A Back-surface, Alternating Contacts (BAC) solar cell comprising: a window layer comprising AlGaAs doped to a first conductivity type, where a doping concentration of the AlGaAs comprising the window layer is greater than 3x(10 18) cm 3 and less than 5x(10 18) cm 3, and where a depth of the window layer is greater than 20 nm and less than 40 nm; an absorption layer contacting the window layer where the absorption layer comprises GaAs doped to the first conductivity type, where a doping concentration of the GaAs comprising -6- App l. No. 15/207,128 Preliminary Amendment dated the absorption layer is greater than 3x(10 17) c n 3 and less than 5x(10 17) c mn 3, and where a depth of the absorption layer is greater than 1000 nm and less than 3000 nm; a BSF layer contacting [[to]] the absorption layer and separated from the window layer by the absorption layer, where the BSF layer comprises AlGaAs doped to the first conductivity type, where a doping concentration of the BSF layer is greater than 3x(10 18) c tn 3 and less than 5x(10 18) c tn 3; a BSF-contact layer contacting [[to]] the BSF layer adsorption layer and separated from the absorption adsorption layer by the BSF layer, where the BSF-contact layer comprises GaAs doped to the first conductivity type, where a doping concentration of the GaAs comprising the BSF-contact layer is greater than 8 x(10 18) c m 3 and less than 1.2x(10 19) c n 3, and where a depth of the BSF layer is greater than 20 nm and less than 40 nm; a first contact coupled to the BSF-contact layer and separated from the BSF layer by the BSF-contact layer; an emitter layer contacting [[to]] the absorption adsorption layer and separated from the window layer by the absorption layer, and the emitter layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter layer comprises GaAs doped to a second conductivity type, where a doping concentration of the GaAs comprising the emitter layer is greater than 8 x(10 17) c m 3 and less than 1.2x(10 18) c n 3, and where a depth of the emitter layer is greater than 120 nm and less than 180 nm; a heterojunction layer contacting [[to]] the emitter layer and separated from the absorption layer by the emitter layer, and heterojunction layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the heterojunction layer comprises AlGaAs doped to the second conductivity type, where a doping concentration of the AlGaAs comprising -7- App l. No. 15/207,128 Preliminary Amendment dated the heterojunction layer is greater than 2x(10 18) c m 3 and less than 4x(10 18) c m 3, and where a depth of the heterojunction layer is greater than 30 nm and less than 50 nm; a emitter-contact layer contacting [[to]] the heterojunction layer and separated from the emitter layer by the heterojunction layer, and the emitter-contact layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter-contact layer comprises GaAs doped to the second conductivity type where, a doping concentration of the GaAs comprising the emitter-contact layer is greater than 8 x(10 18) c m 3 and less than 1.2x(10 19) cm 3, and where a depth of the emitter-contact layer is greater than 20 nm and less than 40 nm; and a second contact coupled to the emitter-contact layer and separated from the heterojunction layer by the emitter-contact layer.
The BAC solar cell of claim 13 where the emitter layer is in contact with absorption layer over a width w i, the BSF layer is in contact with the absorption layer over a width w 2, and the emitter layer is displaced from the BSF layer by an insulator gap having a width w G, and where 1.4 < w/w 2 < 1.6 and (wi + w 2)/(wi + w 2 + w G) > 0.9.
Layer stacks claimed or described, ordered top of device to substrate.
Back-surface Alternating Contact (BAC) solar cell
Materials described outside the worked examples.
AlGaAs window layer
AlGaAs
GaAs absorption layer
GaAs
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates current density and voltage for an embodiment of the BAC Solar 4 20160011 Cell. [00014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
window layer depth (embodiment) | — | AlGaAs |
window layer doping concentration (embodiment) | — |
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an embodiment of the BAC Solar Cell. [00013]
FIG. 2 illustrates current density and voltage for an embodiment of the BAC Solar 4 20160011 Cell. [00014]
FIG. 3 illustrates Conduction Band (CB) and Valence Band (VB) level through another embodiment of the BAC Solar Cell. [00015] Embodiments in accordance with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Back-surface, Alternating Contact (BAC) solar cell comprising: a window layer comprising AlGaAs doped to a first conductivity type; an absorption layer contacting the window layer where the absorption layer comprises GaAs doped to the first conductivity type; a BSF layer contacting [[to]] the absorption layer and separated from the window layer by the absorption layer, where the BSF layer comprises AlGaAs doped to the first conductivity type; a BSF-contact layer contacting [[to]] the BSF layer adsorption layer and separated from the absorption adsorption layer by the BSF layer, where the BSF-contact layer comprises GaAs doped to the first conductivity type; a first contact coupled to the BSF-contact layer and separated from the BSF layer by the BSF-contact layer; an emitter layer contacting [[to]] the absorption adsorption layer and separated from the window layer by the absorption layer, and the emitter layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter layer comprises GaAs doped to a second conductivity type; a heterojunction layer contacting [[to]] the emitter layer and separated from the absorption layer by the emitter layer, and heterojunction layer displaced from the BSF layer, the -2- App l. No. 15/207,128 Preliminary Amendment dated BSF-contact layer, and the first metal contact, where the heterojunction layer comprises AlGaAs doped to the second conductivity type; a emitter-contact layer contacting [[to]] the heterojunction layer and separated from the emitter layer by the heterojunction layer, and the emitter-contact layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter-contact layer comprises GaAs doped to the second conductivity type; and a second contact coupled to the emitter-contact layer and separated from the heterojunction layer by the emitter-contact layer.
The BAC solar cell of claim 1 where: a doping concentration of the GaAs comprising the absorption layer is less than a doping concentration of the AlGaAs comprising the window layer; a doping concentration of the AlGaAs comprising the heterojunction layer is greater than a doping concentration of the GaAs comprising the emitter layer; and a doping concentration of the GaAs comprising the emitter-contact layer is greater than the doping concentration of the AlGaAs comprising the heterojunction layer.
The BAC solar cell of claim 1 where: a depth of the window layer is greater than 20 nm and less than 40 nm; a depth of the absorption layer is greater than 1000 nm and less than 3000 nm; a depth of the BSF layer is greater than 20 nm and less than 40 nm; a depth of the BSF-contact layer is greater than 20 nm and less than 40 nm; a depth of the emitter layer is greater than 120 nm and less than 180 nm; a depth of the heterojunction layer is greater than 30 nm and less than 50 nm; and a depth of the emitter-contact layer is greater than 20 nm and less than 40 nm.
A Back-surface, Alternating Contacts (BAC) solar cell comprising: a window layer comprising AlGaAs doped to a first conductivity type, where a doping concentration of the AlGaAs comprising the window layer is greater than 3x(10 18) cm 3 and less than 5x(10 18) cm 3, and where a depth of the window layer is greater than 20 nm and less than 40 nm; an absorption layer contacting the window layer where the absorption layer comprises GaAs doped to the first conductivity type, where a doping concentration of the GaAs comprising -6- App l. No. 15/207,128 Preliminary Amendment dated the absorption layer is greater than 3x(10 17) c n 3 and less than 5x(10 17) c mn 3, and where a depth of the absorption layer is greater than 1000 nm and less than 3000 nm; a BSF layer contacting [[to]] the absorption layer and separated from the window layer by the absorption layer, where the BSF layer comprises AlGaAs doped to the first conductivity type, where a doping concentration of the BSF layer is greater than 3x(10 18) c tn 3 and less than 5x(10 18) c tn 3; a BSF-contact layer contacting [[to]] the BSF layer adsorption layer and separated from the absorption adsorption layer by the BSF layer, where the BSF-contact layer comprises GaAs doped to the first conductivity type, where a doping concentration of the GaAs comprising the BSF-contact layer is greater than 8 x(10 18) c m 3 and less than 1.2x(10 19) c n 3, and where a depth of the BSF layer is greater than 20 nm and less than 40 nm; a first contact coupled to the BSF-contact layer and separated from the BSF layer by the BSF-contact layer; an emitter layer contacting [[to]] the absorption adsorption layer and separated from the window layer by the absorption layer, and the emitter layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter layer comprises GaAs doped to a second conductivity type, where a doping concentration of the GaAs comprising the emitter layer is greater than 8 x(10 17) c m 3 and less than 1.2x(10 18) c n 3, and where a depth of the emitter layer is greater than 120 nm and less than 180 nm; a heterojunction layer contacting [[to]] the emitter layer and separated from the absorption layer by the emitter layer, and heterojunction layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the heterojunction layer comprises AlGaAs doped to the second conductivity type, where a doping concentration of the AlGaAs comprising -7- App l. No. 15/207,128 Preliminary Amendment dated the heterojunction layer is greater than 2x(10 18) c m 3 and less than 4x(10 18) c m 3, and where a depth of the heterojunction layer is greater than 30 nm and less than 50 nm; a emitter-contact layer contacting [[to]] the heterojunction layer and separated from the emitter layer by the heterojunction layer, and the emitter-contact layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter-contact layer comprises GaAs doped to the second conductivity type where, a doping concentration of the GaAs comprising the emitter-contact layer is greater than 8 x(10 18) c m 3 and less than 1.2x(10 19) cm 3, and where a depth of the emitter-contact layer is greater than 20 nm and less than 40 nm; and a second contact coupled to the emitter-contact layer and separated from the heterojunction layer by the emitter-contact layer.
The BAC solar cell of claim 13 where the emitter layer is in contact with absorption layer over a width w i, the BSF layer is in contact with the absorption layer over a width w 2, and the emitter layer is displaced from the BSF layer by an insulator gap having a width w G, and where 1.4 < w/w 2 < 1.6 and (wi + w 2)/(wi + w 2 + w G) > 0.9.
Layer stacks claimed or described, ordered top of device to substrate.
Back-surface Alternating Contact (BAC) solar cell
Materials described outside the worked examples.
AlGaAs window layer
AlGaAs
GaAs absorption layer
GaAs
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates current density and voltage for an embodiment of the BAC Solar 4 20160011 Cell. [00014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
window layer depth (embodiment) | — | AlGaAs |
window layer doping concentration (embodiment) | — |
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an embodiment of the BAC Solar Cell. [00013]
FIG. 2 illustrates current density and voltage for an embodiment of the BAC Solar 4 20160011 Cell. [00014]
FIG. 3 illustrates Conduction Band (CB) and Valence Band (VB) level through another embodiment of the BAC Solar Cell. [00015] Embodiments in accordance with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Back-surface, Alternating Contact (BAC) solar cell comprising: a window layer comprising AlGaAs doped to a first conductivity type; an absorption layer contacting the window layer where the absorption layer comprises GaAs doped to the first conductivity type; a BSF layer contacting [[to]] the absorption layer and separated from the window layer by the absorption layer, where the BSF layer comprises AlGaAs doped to the first conductivity type; a BSF-contact layer contacting [[to]] the BSF layer adsorption layer and separated from the absorption adsorption layer by the BSF layer, where the BSF-contact layer comprises GaAs doped to the first conductivity type; a first contact coupled to the BSF-contact layer and separated from the BSF layer by the BSF-contact layer; an emitter layer contacting [[to]] the absorption adsorption layer and separated from the window layer by the absorption layer, and the emitter layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter layer comprises GaAs doped to a second conductivity type; a heterojunction layer contacting [[to]] the emitter layer and separated from the absorption layer by the emitter layer, and heterojunction layer displaced from the BSF layer, the -2- App l. No. 15/207,128 Preliminary Amendment dated BSF-contact layer, and the first metal contact, where the heterojunction layer comprises AlGaAs doped to the second conductivity type; a emitter-contact layer contacting [[to]] the heterojunction layer and separated from the emitter layer by the heterojunction layer, and the emitter-contact layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter-contact layer comprises GaAs doped to the second conductivity type; and a second contact coupled to the emitter-contact layer and separated from the heterojunction layer by the emitter-contact layer.
The BAC solar cell of claim 1 where: a doping concentration of the GaAs comprising the absorption layer is less than a doping concentration of the AlGaAs comprising the window layer; a doping concentration of the AlGaAs comprising the heterojunction layer is greater than a doping concentration of the GaAs comprising the emitter layer; and a doping concentration of the GaAs comprising the emitter-contact layer is greater than the doping concentration of the AlGaAs comprising the heterojunction layer.
The BAC solar cell of claim 1 where: a depth of the window layer is greater than 20 nm and less than 40 nm; a depth of the absorption layer is greater than 1000 nm and less than 3000 nm; a depth of the BSF layer is greater than 20 nm and less than 40 nm; a depth of the BSF-contact layer is greater than 20 nm and less than 40 nm; a depth of the emitter layer is greater than 120 nm and less than 180 nm; a depth of the heterojunction layer is greater than 30 nm and less than 50 nm; and a depth of the emitter-contact layer is greater than 20 nm and less than 40 nm.
A Back-surface, Alternating Contacts (BAC) solar cell comprising: a window layer comprising AlGaAs doped to a first conductivity type, where a doping concentration of the AlGaAs comprising the window layer is greater than 3x(10 18) cm 3 and less than 5x(10 18) cm 3, and where a depth of the window layer is greater than 20 nm and less than 40 nm; an absorption layer contacting the window layer where the absorption layer comprises GaAs doped to the first conductivity type, where a doping concentration of the GaAs comprising -6- App l. No. 15/207,128 Preliminary Amendment dated the absorption layer is greater than 3x(10 17) c n 3 and less than 5x(10 17) c mn 3, and where a depth of the absorption layer is greater than 1000 nm and less than 3000 nm; a BSF layer contacting [[to]] the absorption layer and separated from the window layer by the absorption layer, where the BSF layer comprises AlGaAs doped to the first conductivity type, where a doping concentration of the BSF layer is greater than 3x(10 18) c tn 3 and less than 5x(10 18) c tn 3; a BSF-contact layer contacting [[to]] the BSF layer adsorption layer and separated from the absorption adsorption layer by the BSF layer, where the BSF-contact layer comprises GaAs doped to the first conductivity type, where a doping concentration of the GaAs comprising the BSF-contact layer is greater than 8 x(10 18) c m 3 and less than 1.2x(10 19) c n 3, and where a depth of the BSF layer is greater than 20 nm and less than 40 nm; a first contact coupled to the BSF-contact layer and separated from the BSF layer by the BSF-contact layer; an emitter layer contacting [[to]] the absorption adsorption layer and separated from the window layer by the absorption layer, and the emitter layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter layer comprises GaAs doped to a second conductivity type, where a doping concentration of the GaAs comprising the emitter layer is greater than 8 x(10 17) c m 3 and less than 1.2x(10 18) c n 3, and where a depth of the emitter layer is greater than 120 nm and less than 180 nm; a heterojunction layer contacting [[to]] the emitter layer and separated from the absorption layer by the emitter layer, and heterojunction layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the heterojunction layer comprises AlGaAs doped to the second conductivity type, where a doping concentration of the AlGaAs comprising -7- App l. No. 15/207,128 Preliminary Amendment dated the heterojunction layer is greater than 2x(10 18) c m 3 and less than 4x(10 18) c m 3, and where a depth of the heterojunction layer is greater than 30 nm and less than 50 nm; a emitter-contact layer contacting [[to]] the heterojunction layer and separated from the emitter layer by the heterojunction layer, and the emitter-contact layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter-contact layer comprises GaAs doped to the second conductivity type where, a doping concentration of the GaAs comprising the emitter-contact layer is greater than 8 x(10 18) c m 3 and less than 1.2x(10 19) cm 3, and where a depth of the emitter-contact layer is greater than 20 nm and less than 40 nm; and a second contact coupled to the emitter-contact layer and separated from the heterojunction layer by the emitter-contact layer.
The BAC solar cell of claim 13 where the emitter layer is in contact with absorption layer over a width w i, the BSF layer is in contact with the absorption layer over a width w 2, and the emitter layer is displaced from the BSF layer by an insulator gap having a width w G, and where 1.4 < w/w 2 < 1.6 and (wi + w 2)/(wi + w 2 + w G) > 0.9.
Layer stacks claimed or described, ordered top of device to substrate.
Back-surface Alternating Contact (BAC) solar cell
Materials described outside the worked examples.
AlGaAs window layer
AlGaAs
GaAs absorption layer
GaAs
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates current density and voltage for an embodiment of the BAC Solar 4 20160011 Cell. [00014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
window layer depth (embodiment) | — | AlGaAs |
window layer doping concentration (embodiment) | — |
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an embodiment of the BAC Solar Cell. [00013]
FIG. 2 illustrates current density and voltage for an embodiment of the BAC Solar 4 20160011 Cell. [00014]
FIG. 3 illustrates Conduction Band (CB) and Valence Band (VB) level through another embodiment of the BAC Solar Cell. [00015] Embodiments in accordance with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Back-surface, Alternating Contact (BAC) solar cell comprising: a window layer comprising AlGaAs doped to a first conductivity type; an absorption layer contacting the window layer where the absorption layer comprises GaAs doped to the first conductivity type; a BSF layer contacting [[to]] the absorption layer and separated from the window layer by the absorption layer, where the BSF layer comprises AlGaAs doped to the first conductivity type; a BSF-contact layer contacting [[to]] the BSF layer adsorption layer and separated from the absorption adsorption layer by the BSF layer, where the BSF-contact layer comprises GaAs doped to the first conductivity type; a first contact coupled to the BSF-contact layer and separated from the BSF layer by the BSF-contact layer; an emitter layer contacting [[to]] the absorption adsorption layer and separated from the window layer by the absorption layer, and the emitter layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter layer comprises GaAs doped to a second conductivity type; a heterojunction layer contacting [[to]] the emitter layer and separated from the absorption layer by the emitter layer, and heterojunction layer displaced from the BSF layer, the -2- App l. No. 15/207,128 Preliminary Amendment dated BSF-contact layer, and the first metal contact, where the heterojunction layer comprises AlGaAs doped to the second conductivity type; a emitter-contact layer contacting [[to]] the heterojunction layer and separated from the emitter layer by the heterojunction layer, and the emitter-contact layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter-contact layer comprises GaAs doped to the second conductivity type; and a second contact coupled to the emitter-contact layer and separated from the heterojunction layer by the emitter-contact layer.
The BAC solar cell of claim 1 where: a doping concentration of the GaAs comprising the absorption layer is less than a doping concentration of the AlGaAs comprising the window layer; a doping concentration of the AlGaAs comprising the heterojunction layer is greater than a doping concentration of the GaAs comprising the emitter layer; and a doping concentration of the GaAs comprising the emitter-contact layer is greater than the doping concentration of the AlGaAs comprising the heterojunction layer.
The BAC solar cell of claim 1 where: a depth of the window layer is greater than 20 nm and less than 40 nm; a depth of the absorption layer is greater than 1000 nm and less than 3000 nm; a depth of the BSF layer is greater than 20 nm and less than 40 nm; a depth of the BSF-contact layer is greater than 20 nm and less than 40 nm; a depth of the emitter layer is greater than 120 nm and less than 180 nm; a depth of the heterojunction layer is greater than 30 nm and less than 50 nm; and a depth of the emitter-contact layer is greater than 20 nm and less than 40 nm.
A Back-surface, Alternating Contacts (BAC) solar cell comprising: a window layer comprising AlGaAs doped to a first conductivity type, where a doping concentration of the AlGaAs comprising the window layer is greater than 3x(10 18) cm 3 and less than 5x(10 18) cm 3, and where a depth of the window layer is greater than 20 nm and less than 40 nm; an absorption layer contacting the window layer where the absorption layer comprises GaAs doped to the first conductivity type, where a doping concentration of the GaAs comprising -6- App l. No. 15/207,128 Preliminary Amendment dated the absorption layer is greater than 3x(10 17) c n 3 and less than 5x(10 17) c mn 3, and where a depth of the absorption layer is greater than 1000 nm and less than 3000 nm; a BSF layer contacting [[to]] the absorption layer and separated from the window layer by the absorption layer, where the BSF layer comprises AlGaAs doped to the first conductivity type, where a doping concentration of the BSF layer is greater than 3x(10 18) c tn 3 and less than 5x(10 18) c tn 3; a BSF-contact layer contacting [[to]] the BSF layer adsorption layer and separated from the absorption adsorption layer by the BSF layer, where the BSF-contact layer comprises GaAs doped to the first conductivity type, where a doping concentration of the GaAs comprising the BSF-contact layer is greater than 8 x(10 18) c m 3 and less than 1.2x(10 19) c n 3, and where a depth of the BSF layer is greater than 20 nm and less than 40 nm; a first contact coupled to the BSF-contact layer and separated from the BSF layer by the BSF-contact layer; an emitter layer contacting [[to]] the absorption adsorption layer and separated from the window layer by the absorption layer, and the emitter layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter layer comprises GaAs doped to a second conductivity type, where a doping concentration of the GaAs comprising the emitter layer is greater than 8 x(10 17) c m 3 and less than 1.2x(10 18) c n 3, and where a depth of the emitter layer is greater than 120 nm and less than 180 nm; a heterojunction layer contacting [[to]] the emitter layer and separated from the absorption layer by the emitter layer, and heterojunction layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the heterojunction layer comprises AlGaAs doped to the second conductivity type, where a doping concentration of the AlGaAs comprising -7- App l. No. 15/207,128 Preliminary Amendment dated the heterojunction layer is greater than 2x(10 18) c m 3 and less than 4x(10 18) c m 3, and where a depth of the heterojunction layer is greater than 30 nm and less than 50 nm; a emitter-contact layer contacting [[to]] the heterojunction layer and separated from the emitter layer by the heterojunction layer, and the emitter-contact layer displaced from the BSF layer, the BSF-contact layer, and the first metal contact, where the emitter-contact layer comprises GaAs doped to the second conductivity type where, a doping concentration of the GaAs comprising the emitter-contact layer is greater than 8 x(10 18) c m 3 and less than 1.2x(10 19) cm 3, and where a depth of the emitter-contact layer is greater than 20 nm and less than 40 nm; and a second contact coupled to the emitter-contact layer and separated from the heterojunction layer by the emitter-contact layer.
The BAC solar cell of claim 13 where the emitter layer is in contact with absorption layer over a width w i, the BSF layer is in contact with the absorption layer over a width w 2, and the emitter layer is displaced from the BSF layer by an insulator gap having a width w G, and where 1.4 < w/w 2 < 1.6 and (wi + w 2)/(wi + w 2 + w G) > 0.9.
Layer stacks claimed or described, ordered top of device to substrate.
Back-surface Alternating Contact (BAC) solar cell
Materials described outside the worked examples.
AlGaAs window layer
AlGaAs
GaAs absorption layer
GaAs
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates current density and voltage for an embodiment of the BAC Solar 4 20160011 Cell. [00014]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
window layer depth (embodiment) | — | AlGaAs |
window layer doping concentration (embodiment) | — |
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absorption layer depth (embodiment) | — | GaAs |
absorption layer doping concentration (embodiment) | — | GaAs |
emitter layer depth (embodiment) | — | GaAs |
emitter layer doping concentration (embodiment) | — | GaAs |
heterojunction layer depth (embodiment) | — | AlGaAs |
heterojunction layer doping concentration (embodiment) | — | AlGaAs |
emitter-contact layer depth (embodiment) | — | GaAs |
emitter-contact layer doping concentration (embodiment) | — | GaAs |
BSF layer depth (embodiment) | — | AlGaAs |
BSF layer doping concentration (embodiment) | — | AlGaAs |
BSF-contact layer depth (embodiment) | — | GaAs |
BSF-contact layer doping concentration (embodiment) | — | GaAs |
Thickness | 1000–3000 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 3000 nm | — |
Thickness | ≤ 180 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 120 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≤ 21 nm | — |
Thickness | ≤ 2200 nm | — |
Thickness | ≤ 22 nm | — |
Thickness | ≤ 155 nm | — |
Thickness | ≤ 42 nm | — |
Thickness | ≥ 19 nm | — |
Thickness | ≥ 1800 nm | — |
Thickness | ≥ 145 nm | — |
Thickness | ≥ 38 nm | — |
absorption layer depth (embodiment) | — | GaAs |
absorption layer doping concentration (embodiment) | — | GaAs |
emitter layer depth (embodiment) | — | GaAs |
emitter layer doping concentration (embodiment) | — | GaAs |
heterojunction layer depth (embodiment) | — | AlGaAs |
heterojunction layer doping concentration (embodiment) | — | AlGaAs |
emitter-contact layer depth (embodiment) | — | GaAs |
emitter-contact layer doping concentration (embodiment) | — | GaAs |
BSF layer depth (embodiment) | — | AlGaAs |
BSF layer doping concentration (embodiment) | — | AlGaAs |
BSF-contact layer depth (embodiment) | — | GaAs |
BSF-contact layer doping concentration (embodiment) | — | GaAs |
Thickness | 1000–3000 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 3000 nm | — |
Thickness | ≤ 180 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 120 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≤ 21 nm | — |
Thickness | ≤ 2200 nm | — |
Thickness | ≤ 22 nm | — |
Thickness | ≤ 155 nm | — |
Thickness | ≤ 42 nm | — |
Thickness | ≥ 19 nm | — |
Thickness | ≥ 1800 nm | — |
Thickness | ≥ 145 nm | — |
Thickness | ≥ 38 nm | — |
absorption layer depth (embodiment) | — | GaAs |
absorption layer doping concentration (embodiment) | — | GaAs |
emitter layer depth (embodiment) | — | GaAs |
emitter layer doping concentration (embodiment) | — | GaAs |
heterojunction layer depth (embodiment) | — | AlGaAs |
heterojunction layer doping concentration (embodiment) | — | AlGaAs |
emitter-contact layer depth (embodiment) | — | GaAs |
emitter-contact layer doping concentration (embodiment) | — | GaAs |
BSF layer depth (embodiment) | — | AlGaAs |
BSF layer doping concentration (embodiment) | — | AlGaAs |
BSF-contact layer depth (embodiment) | — | GaAs |
BSF-contact layer doping concentration (embodiment) | — | GaAs |
Thickness | 1000–3000 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 3000 nm | — |
Thickness | ≤ 180 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 120 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≤ 21 nm | — |
Thickness | ≤ 2200 nm | — |
Thickness | ≤ 22 nm | — |
Thickness | ≤ 155 nm | — |
Thickness | ≤ 42 nm | — |
Thickness | ≥ 19 nm | — |
Thickness | ≥ 1800 nm | — |
Thickness | ≥ 145 nm | — |
Thickness | ≥ 38 nm | — |
absorption layer depth (embodiment) | — | GaAs |
absorption layer doping concentration (embodiment) | — | GaAs |
emitter layer depth (embodiment) | — | GaAs |
emitter layer doping concentration (embodiment) | — | GaAs |
heterojunction layer depth (embodiment) | — | AlGaAs |
heterojunction layer doping concentration (embodiment) | — | AlGaAs |
emitter-contact layer depth (embodiment) | — | GaAs |
emitter-contact layer doping concentration (embodiment) | — | GaAs |
BSF layer depth (embodiment) | — | AlGaAs |
BSF layer doping concentration (embodiment) | — | AlGaAs |
BSF-contact layer depth (embodiment) | — | GaAs |
BSF-contact layer doping concentration (embodiment) | — | GaAs |
Thickness | 1000–3000 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 3000 nm | — |
Thickness | ≤ 180 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 120 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≤ 21 nm | — |
Thickness | ≤ 2200 nm | — |
Thickness | ≤ 22 nm | — |
Thickness | ≤ 155 nm | — |
Thickness | ≤ 42 nm | — |
Thickness | ≥ 19 nm | — |
Thickness | ≥ 1800 nm | — |
Thickness | ≥ 145 nm | — |
Thickness | ≥ 38 nm | — |