Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

Serkan Paçal; Chanaprom Cholsuk; Mouli Hazra; Çağlar Samaner; Özgür Çakır; Tobias Vogl; Serkan Ateş

doi:10.48550/arXiv.2604.07314

Paper details

Research paper

Experimental CharacterizationComputational DFT

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

Serkan Paçal, Chanaprom Cholsuk, Mouli Hazra, Çağlar Samaner et al.

arXiv preprint·2026·arXiv:2604.07314

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single hBN quantum emitter measured at room temperature with energy-resolved polarization analysis of the ZPL and optical phonon sideband.

2 characterizations9 properties2 figures

ExperimentalhBNStudied Material

Second representative single hBN quantum emitter used for cryogenic (6 K) and room-temperature polarization-resolved Stokes measurements.

2 characterizations3 properties1 figure

ExperimentalhBNStudied Material

Representative hBN defect used in first-principles calculations for the weak electron-phonon coupling regime.

No measurements recorded

Simulated Supercell DfthBNStudied Material

Representative hBN defect used in first-principles calculations for the strong electron-phonon coupling regime.

No measurements recorded

Simulated Supercell DfthBNStudied Material

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron nitride

studied material

Characterization

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	ZPL	1.848eV	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	OPSB	1.683eV	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	ZPL	1.494eV	hBN	Second representative single hBN quantum emitter used for cr		—
Pl Peak Shift	OPSB-ZPL separation	165meV	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	orientation sweep	40deg	hBN	Second representative single hBN quantum emitter used for cr		—
Pl Peak Shift	orientation sweep	40deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	OPSB relative offset	5deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	OPSB intra-band rotation	30deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	DOLP	0.71	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	excitation polarization visibility	0.65	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	g(2)(0)	0.11±0.01	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	orientation sweep	40deg	hBN	Second representative single hBN quantum emitter used for cr		—
Optical Band Gap	band gap	6.09eV	hBN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	ZPL	1.848eV	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	OPSB	1.683eV	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	ZPL	1.494eV	hBN	Second representative single hBN quantum emitter used for cr		—
Pl Peak Shift	OPSB-ZPL separation	165meV	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	orientation sweep	40deg	hBN	Second representative single hBN quantum emitter used for cr		—
Pl Peak Shift	orientation sweep	40deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	OPSB relative offset	5deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	OPSB intra-band rotation	30deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	DOLP	0.71	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	excitation polarization visibility	0.65	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	g(2)(0)	0.11±0.01	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	orientation sweep	40deg	hBN	Second representative single hBN quantum emitter used for cr		—
Optical Band Gap	band gap	6.09eV	hBN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	ZPL	1.848eV	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	OPSB	1.683eV	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	ZPL	1.494eV	hBN	Second representative single hBN quantum emitter used for cr		—
Pl Peak Shift	OPSB-ZPL separation	165meV	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	orientation sweep	40deg	hBN	Second representative single hBN quantum emitter used for cr		—
Pl Peak Shift	orientation sweep	40deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	OPSB relative offset	5deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	OPSB intra-band rotation	30deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	DOLP	0.71	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	excitation polarization visibility	0.65	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	g(2)(0)	0.11±0.01	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	orientation sweep	40deg	hBN	Second representative single hBN quantum emitter used for cr		—
Optical Band Gap	band gap	6.09eV	hBN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	ZPL	1.848eV	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	OPSB	1.683eV	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	ZPL	1.494eV	hBN	Second representative single hBN quantum emitter used for cr		—
Pl Peak Shift	OPSB-ZPL separation	165meV	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	orientation sweep	40deg	hBN	Second representative single hBN quantum emitter used for cr		—
Pl Peak Shift	orientation sweep	40deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	OPSB relative offset	5deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Peak Shift	OPSB intra-band rotation	30deg	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	DOLP	0.71	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	excitation polarization visibility	0.65	hBN	Single hBN quantum emitter measured at room temperature with		—
Pl Quantum Yield	g(2)(0)	0.11±0.01	hBN	Single hBN quantum emitter measured at room temperature with		—
PL Peak	orientation sweep	40deg	hBN	Second representative single hBN quantum emitter used for cr		—
Optical Band Gap	band gap	6.09eV	hBN	—	—	—

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

Samples

Single hBN quantum emitter measured at room temperature with energy-resolved polarization analysis of the ZPL and optical phonon sideband.

Second representative single hBN quantum emitter used for cryogenic (6 K) and room-temperature polarization-resolved Stokes measurements.

Representative hBN defect used in first-principles calculations for the weak electron-phonon coupling regime.

Representative hBN defect used in first-principles calculations for the strong electron-phonon coupling regime.

Materials

Characterization

Why these are connected

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

Samples

Single hBN quantum emitter measured at room temperature with energy-resolved polarization analysis of the ZPL and optical phonon sideband.

Second representative single hBN quantum emitter used for cryogenic (6 K) and room-temperature polarization-resolved Stokes measurements.

Representative hBN defect used in first-principles calculations for the weak electron-phonon coupling regime.

Representative hBN defect used in first-principles calculations for the strong electron-phonon coupling regime.

Materials

Characterization

Why these are connected

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

Samples

Single hBN quantum emitter measured at room temperature with energy-resolved polarization analysis of the ZPL and optical phonon sideband.

Second representative single hBN quantum emitter used for cryogenic (6 K) and room-temperature polarization-resolved Stokes measurements.

Representative hBN defect used in first-principles calculations for the weak electron-phonon coupling regime.

Representative hBN defect used in first-principles calculations for the strong electron-phonon coupling regime.

Materials

Characterization

Why these are connected

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

Samples

Single hBN quantum emitter measured at room temperature with energy-resolved polarization analysis of the ZPL and optical phonon sideband.

Second representative single hBN quantum emitter used for cryogenic (6 K) and room-temperature polarization-resolved Stokes measurements.

Representative hBN defect used in first-principles calculations for the weak electron-phonon coupling regime.

Representative hBN defect used in first-principles calculations for the strong electron-phonon coupling regime.

Materials

Characterization

Why these are connected

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

Samples

Single hBN quantum emitter measured at room temperature with energy-resolved polarization analysis of the ZPL and optical phonon sideband.

Second representative single hBN quantum emitter used for cryogenic (6 K) and room-temperature polarization-resolved Stokes measurements.

Representative hBN defect used in first-principles calculations for the weak electron-phonon coupling regime.

Representative hBN defect used in first-principles calculations for the strong electron-phonon coupling regime.

Materials

Characterization

Why these are connected

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

Samples

Single hBN quantum emitter measured at room temperature with energy-resolved polarization analysis of the ZPL and optical phonon sideband.

Second representative single hBN quantum emitter used for cryogenic (6 K) and room-temperature polarization-resolved Stokes measurements.

Representative hBN defect used in first-principles calculations for the weak electron-phonon coupling regime.

Representative hBN defect used in first-principles calculations for the strong electron-phonon coupling regime.

Materials

Characterization

Why these are connected

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

Samples

Single hBN quantum emitter measured at room temperature with energy-resolved polarization analysis of the ZPL and optical phonon sideband.

Second representative single hBN quantum emitter used for cryogenic (6 K) and room-temperature polarization-resolved Stokes measurements.

Representative hBN defect used in first-principles calculations for the weak electron-phonon coupling regime.

Representative hBN defect used in first-principles calculations for the strong electron-phonon coupling regime.

Materials

Characterization

Why these are connected

Transition Dipole Rotation Beyond the Condon Approximation in Single hBN Quantum Emitters

Samples

Single hBN quantum emitter measured at room temperature with energy-resolved polarization analysis of the ZPL and optical phonon sideband.

Second representative single hBN quantum emitter used for cryogenic (6 K) and room-temperature polarization-resolved Stokes measurements.

Representative hBN defect used in first-principles calculations for the weak electron-phonon coupling regime.

Representative hBN defect used in first-principles calculations for the strong electron-phonon coupling regime.

Materials

Characterization

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations