Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors

Paper details

Research paper

Experimental Characterization

Gyuna Park, Ivan Zhigulin, Hoyoung Jung, Jake Horder et al.

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

3 characterizations6 properties3 figures

ExperimentalhBNStudied MaterialCCapping Or ContacthBN:CStudied Material

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNboron nitride

Variables

dopant= carbon-doped variant also studied as hBN:C

studied material

Related documents with shared materials, methods, properties, or citations.

Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors | Matter42 Literature

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	521nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Fwhm	ZPL	3.5nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
PL Peak	PSB	560nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Shift	PSB redshift relative to ZPL	171meV	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
PL Peak	ZPL	518nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Fwhm	ZPL	5nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	521nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Fwhm	ZPL	3.5nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
PL Peak	PSB	560nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Shift	PSB redshift relative to ZPL	171meV	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
PL Peak	ZPL	518nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Fwhm	ZPL	5nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	521nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Fwhm	ZPL	3.5nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
PL Peak	PSB	560nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Shift	PSB redshift relative to ZPL	171meV	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
PL Peak	ZPL	518nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Fwhm	ZPL	5nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—

Type	Label	Value	Material	Sample	Source
PL Peak	ZPL	521nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Fwhm	ZPL	3.5nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
PL Peak	PSB	560nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Shift	PSB redshift relative to ZPL	171meV	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
PL Peak	ZPL	518nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—
Pl Peak Fwhm	ZPL	5nm	hBN:C	Vertical vdW tunnel-junction device comprising graphene / hB	—