Research paper
Experimental CharacterizationComputational DFTEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations8 properties5 figures
1 characterization4 figures
3 preparations1 characterization4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | hBN spacer thickness (upper) | 32nm | — | |||
| Thickness | hBN spacer thickness (lower) | 30nm | — | |||
| Thickness | upper liquid layer thickness | 42nm | — | |||
| Thickness | bottom liquid layer thickness | 28nm | — | |||
| Thickness | total specimen thickness | 70nm | — | |||
| Electron Flux | beam flux | 2.8 x 10^6e s⁻¹ nm⁻² | — | |||
| Electron Flux | beam flux range | 0.7-2.8 x 10^6e s⁻¹ nm⁻² | — | |||
| Areal Density | Pt adatom areal density | 0.6nm⁻² | — | |||
| Binding Energy | Pt at Mo site | 6.1eV | — | — | ||
| Binding Energy | Pt at S site | 3.5eV | — | — | ||
| Binding Energy | Pt at HC site | 3.1eV | — | — | ||
| Binding Energy | O at S vacancy | 9.1eV | — | — | ||
| Binding Energy | Pt at S vacancy | 6.1eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale
Sliding induced multiple polarization states in two-dimensional ferroelectrics
A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS2
An Integrated Constrained Gradient Descent (iCGD) Protocol to Correct Scan-Positional Errors for Electron Ptychography with High Accuracy and Precision
METHOD OF MANUFACTURING MOS2 HAVING 1T CRYSTAL STRUCTURE
Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
Sliding ferroelectric memories and synapses
Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Defects, band bending and ionization rings in MoS2
Extending Ambient Pressure X-ray Photoelectron Spectroscopy to Plasma Studies: A novel and flexible plasma gun approach
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations8 properties5 figures
1 characterization4 figures
3 preparations1 characterization4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | hBN spacer thickness (upper) | 32nm | — | |||
| Thickness | hBN spacer thickness (lower) | 30nm | — | |||
| Thickness | upper liquid layer thickness | 42nm | — | |||
| Thickness | bottom liquid layer thickness | 28nm | — | |||
| Thickness | total specimen thickness | 70nm | — | |||
| Electron Flux | beam flux | 2.8 x 10^6e s⁻¹ nm⁻² | — | |||
| Electron Flux | beam flux range | 0.7-2.8 x 10^6e s⁻¹ nm⁻² | — | |||
| Areal Density | Pt adatom areal density | 0.6nm⁻² | — | |||
| Binding Energy | Pt at Mo site | 6.1eV | — | — | ||
| Binding Energy | Pt at S site | 3.5eV | — | — | ||
| Binding Energy | Pt at HC site | 3.1eV | — | — | ||
| Binding Energy | O at S vacancy | 9.1eV | — | — | ||
| Binding Energy | Pt at S vacancy | 6.1eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale
Sliding induced multiple polarization states in two-dimensional ferroelectrics
A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS2
An Integrated Constrained Gradient Descent (iCGD) Protocol to Correct Scan-Positional Errors for Electron Ptychography with High Accuracy and Precision
METHOD OF MANUFACTURING MOS2 HAVING 1T CRYSTAL STRUCTURE
Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
Sliding ferroelectric memories and synapses
Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Defects, band bending and ionization rings in MoS2
Extending Ambient Pressure X-ray Photoelectron Spectroscopy to Plasma Studies: A novel and flexible plasma gun approach
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations8 properties5 figures
1 characterization4 figures
3 preparations1 characterization4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | hBN spacer thickness (upper) | 32nm | — | |||
| Thickness | hBN spacer thickness (lower) | 30nm | — | |||
| Thickness | upper liquid layer thickness | 42nm | — | |||
| Thickness | bottom liquid layer thickness | 28nm | — | |||
| Thickness | total specimen thickness | 70nm | — | |||
| Electron Flux | beam flux | 2.8 x 10^6e s⁻¹ nm⁻² | — | |||
| Electron Flux | beam flux range | 0.7-2.8 x 10^6e s⁻¹ nm⁻² | — | |||
| Areal Density | Pt adatom areal density | 0.6nm⁻² | — | |||
| Binding Energy | Pt at Mo site | 6.1eV | — | — | ||
| Binding Energy | Pt at S site | 3.5eV | — | — | ||
| Binding Energy | Pt at HC site | 3.1eV | — | — | ||
| Binding Energy | O at S vacancy | 9.1eV | — | — | ||
| Binding Energy | Pt at S vacancy | 6.1eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale
Sliding induced multiple polarization states in two-dimensional ferroelectrics
A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS2
An Integrated Constrained Gradient Descent (iCGD) Protocol to Correct Scan-Positional Errors for Electron Ptychography with High Accuracy and Precision
METHOD OF MANUFACTURING MOS2 HAVING 1T CRYSTAL STRUCTURE
Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
Sliding ferroelectric memories and synapses
Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Defects, band bending and ionization rings in MoS2
Extending Ambient Pressure X-ray Photoelectron Spectroscopy to Plasma Studies: A novel and flexible plasma gun approach
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations8 properties5 figures
1 characterization4 figures
3 preparations1 characterization4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Thickness | hBN spacer thickness (upper) | 32nm | — | |||
| Thickness | hBN spacer thickness (lower) | 30nm | — | |||
| Thickness | upper liquid layer thickness | 42nm | — | |||
| Thickness | bottom liquid layer thickness | 28nm | — | |||
| Thickness | total specimen thickness | 70nm | — | |||
| Electron Flux | beam flux | 2.8 x 10^6e s⁻¹ nm⁻² | — | |||
| Electron Flux | beam flux range | 0.7-2.8 x 10^6e s⁻¹ nm⁻² | — | |||
| Areal Density | Pt adatom areal density | 0.6nm⁻² | — | |||
| Binding Energy | Pt at Mo site | 6.1eV | — | — | ||
| Binding Energy | Pt at S site | 3.5eV | — | — | ||
| Binding Energy | Pt at HC site | 3.1eV | — | — | ||
| Binding Energy | O at S vacancy | 9.1eV | — | — | ||
| Binding Energy | Pt at S vacancy | 6.1eV | — | — |
Related documents with shared materials, methods, properties, or citations.
Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale
Sliding induced multiple polarization states in two-dimensional ferroelectrics
A Symmetric Superconducting Dome Hosts Non-Fermi Liquid Behavior at Optimal Doping in MoS2
An Integrated Constrained Gradient Descent (iCGD) Protocol to Correct Scan-Positional Errors for Electron Ptychography with High Accuracy and Precision
METHOD OF MANUFACTURING MOS2 HAVING 1T CRYSTAL STRUCTURE
Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
Sliding ferroelectric memories and synapses
Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy
Near-Infrared plasmon induced hot electron extraction evidence in an indium tin oxide nanoparticle / monolayer molybdenum disulphide heterostructure
Defects, band bending and ionization rings in MoS2
Extending Ambient Pressure X-ray Photoelectron Spectroscopy to Plasma Studies: A novel and flexible plasma gun approach