Topological electric field-defined quantum dots in bilayer graphene: An atomistic approach | Matter42 Literature
Paper details
Research paper
TheoreticalComputed Band Structure
Topological electric field-defined quantum dots in bilayer graphene: An atomistic approach
W. Jask´olski
arXiv·2026·arXiv:2603.13055
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Atomistic tight-binding model of two parallel electric-field domain walls in bilayer graphene oriented along the armchair direction, with finite-width quantum-dot-like confinement.
2 properties
SimulatedCStudied Material
Atomistic tight-binding model of two parallel electric-field domain walls in bilayer graphene oriented along the zigzag direction, with finite-width quantum-dot-like confinement.
Topological electric field-defined quantum dots in bilayer graphene: An atomistic approach
W. Jask´olski
arXiv·2026·arXiv:2603.13055
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Atomistic tight-binding model of two parallel electric-field domain walls in bilayer graphene oriented along the armchair direction, with finite-width quantum-dot-like confinement.
2 properties
SimulatedCStudied Material
Atomistic tight-binding model of two parallel electric-field domain walls in bilayer graphene oriented along the zigzag direction, with finite-width quantum-dot-like confinement.
Topological electric field-defined quantum dots in bilayer graphene: An atomistic approach
W. Jask´olski
arXiv·2026·arXiv:2603.13055
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Atomistic tight-binding model of two parallel electric-field domain walls in bilayer graphene oriented along the armchair direction, with finite-width quantum-dot-like confinement.
2 properties
SimulatedCStudied Material
Atomistic tight-binding model of two parallel electric-field domain walls in bilayer graphene oriented along the zigzag direction, with finite-width quantum-dot-like confinement.
Topological electric field-defined quantum dots in bilayer graphene: An atomistic approach
W. Jask´olski
arXiv·2026·arXiv:2603.13055
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Atomistic tight-binding model of two parallel electric-field domain walls in bilayer graphene oriented along the armchair direction, with finite-width quantum-dot-like confinement.
2 properties
SimulatedCStudied Material
Atomistic tight-binding model of two parallel electric-field domain walls in bilayer graphene oriented along the zigzag direction, with finite-width quantum-dot-like confinement.
Atomistic π-electron tight-binding calculations for bilayer graphene with nearest-neighbor intra-layer hopping and inter-layer hopping, using finite systems and discrete wave-vector sampling to obtain energy bands and discretized levels.
Settings
modeltight-binding
system typeelectric-field-defined quantum dot / parallel domain walls
boundary conditionsopen, closed
finite width samplingkn = nπ/W
inter layer hopping ev0.27
intra layer hopping ev2.7
domain wall orientationsarmchair, zigzag
electric field applied as layer potentials-0.1, 0.1, -0.5, 0.5
Conditions
context:atomistic study of topological bound states
field direction:perpendicular to bilayer
modeling target:quantized 1D topological modes and bound states
Atomistic π-electron tight-binding calculations for bilayer graphene with nearest-neighbor intra-layer hopping and inter-layer hopping, using finite systems and discrete wave-vector sampling to obtain energy bands and discretized levels.
Settings
modeltight-binding
system typeelectric-field-defined quantum dot / parallel domain walls
boundary conditionsopen, closed
finite width samplingkn = nπ/W
inter layer hopping ev0.27
intra layer hopping ev2.7
domain wall orientationsarmchair, zigzag
electric field applied as layer potentials-0.1, 0.1, -0.5, 0.5
Conditions
context:atomistic study of topological bound states
field direction:perpendicular to bilayer
modeling target:quantized 1D topological modes and bound states
Atomistic π-electron tight-binding calculations for bilayer graphene with nearest-neighbor intra-layer hopping and inter-layer hopping, using finite systems and discrete wave-vector sampling to obtain energy bands and discretized levels.
Settings
modeltight-binding
system typeelectric-field-defined quantum dot / parallel domain walls
boundary conditionsopen, closed
finite width samplingkn = nπ/W
inter layer hopping ev0.27
intra layer hopping ev2.7
domain wall orientationsarmchair, zigzag
electric field applied as layer potentials-0.1, 0.1, -0.5, 0.5
Conditions
context:atomistic study of topological bound states
field direction:perpendicular to bilayer
modeling target:quantized 1D topological modes and bound states
Atomistic π-electron tight-binding calculations for bilayer graphene with nearest-neighbor intra-layer hopping and inter-layer hopping, using finite systems and discrete wave-vector sampling to obtain energy bands and discretized levels.
Settings
modeltight-binding
system typeelectric-field-defined quantum dot / parallel domain walls
boundary conditionsopen, closed
finite width samplingkn = nπ/W
inter layer hopping ev0.27
intra layer hopping ev2.7
domain wall orientationsarmchair, zigzag
electric field applied as layer potentials-0.1, 0.1, -0.5, 0.5
Conditions
context:atomistic study of topological bound states
field direction:perpendicular to bilayer
modeling target:quantized 1D topological modes and bound states
