Research paperComputational DFTTheoreticalSpin-dependent electronic transport in NiMnSb/MoS₂(001)/NiMnSb magnetic tunnel junctionAloka Ranjan Sahoo, Sharat Chandra2025·10.48550/arxiv.2504.15614·arXiv:2504.15614AbstractHalf-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into semiconducting barriers at ferromagnet-semiconductor junctions. Combining density functional theory and non-equilibrium Green’s function methods, the electronic structure and spin-dependent electron transport in NiMnSb/MoS₂(001)/NiMnSb magnetic tunnel junctions are studied. The work examines spin injection into MoS₂ using half-metallic NiMnSb electrodes, the effect of MoS₂ thickness, and the effect of interface type (Mn-S versus Sb-S) on electronic structure and spin-transport properties.Read more
Bulk NiMnSb reference system used for electronic-structure calculations.1 characterization3 propertiesSimulated Supercell DftNiMnSbStudied MaterialExpand
Monolayer MoS₂ spacer used in transport modeling.1 characterization1 propertySimulated Supercell DftMoS₂Studied MaterialExpand
Three-layer MoS₂ spacer used in transport modeling.1 characterizationSimulated Supercell DftMoS₂Studied MaterialExpand
NiMnSb/MoS₂ monolayer/NiMnSb magnetic tunnel junction with Mn-S or Sb-S interface termination.1 characterizationSimulated Supercell DftNiMnSbStudied MaterialMoS₂Studied MaterialExpand
NiMnSb/MoS₂ three-layer/NiMnSb magnetic tunnel junction with Mn-S or Sb-S interface termination.1 characterization1 propertySimulated Supercell DftNiMnSbStudied MaterialMoS₂Studied MaterialExpand
Research paperComputational DFTTheoreticalSpin-dependent electronic transport in NiMnSb/MoS₂(001)/NiMnSb magnetic tunnel junctionAloka Ranjan Sahoo, Sharat Chandra2025·10.48550/arxiv.2504.15614·arXiv:2504.15614AbstractHalf-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into semiconducting barriers at ferromagnet-semiconductor junctions. Combining density functional theory and non-equilibrium Green’s function methods, the electronic structure and spin-dependent electron transport in NiMnSb/MoS₂(001)/NiMnSb magnetic tunnel junctions are studied. The work examines spin injection into MoS₂ using half-metallic NiMnSb electrodes, the effect of MoS₂ thickness, and the effect of interface type (Mn-S versus Sb-S) on electronic structure and spin-transport properties.Read more
Bulk NiMnSb reference system used for electronic-structure calculations.1 characterization3 propertiesSimulated Supercell DftNiMnSbStudied MaterialExpand
Monolayer MoS₂ spacer used in transport modeling.1 characterization1 propertySimulated Supercell DftMoS₂Studied MaterialExpand
Three-layer MoS₂ spacer used in transport modeling.1 characterizationSimulated Supercell DftMoS₂Studied MaterialExpand
NiMnSb/MoS₂ monolayer/NiMnSb magnetic tunnel junction with Mn-S or Sb-S interface termination.1 characterizationSimulated Supercell DftNiMnSbStudied MaterialMoS₂Studied MaterialExpand
NiMnSb/MoS₂ three-layer/NiMnSb magnetic tunnel junction with Mn-S or Sb-S interface termination.1 characterization1 propertySimulated Supercell DftNiMnSbStudied MaterialMoS₂Studied MaterialExpand
Research paperComputational DFTTheoreticalSpin-dependent electronic transport in NiMnSb/MoS₂(001)/NiMnSb magnetic tunnel junctionAloka Ranjan Sahoo, Sharat Chandra2025·10.48550/arxiv.2504.15614·arXiv:2504.15614AbstractHalf-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into semiconducting barriers at ferromagnet-semiconductor junctions. Combining density functional theory and non-equilibrium Green’s function methods, the electronic structure and spin-dependent electron transport in NiMnSb/MoS₂(001)/NiMnSb magnetic tunnel junctions are studied. The work examines spin injection into MoS₂ using half-metallic NiMnSb electrodes, the effect of MoS₂ thickness, and the effect of interface type (Mn-S versus Sb-S) on electronic structure and spin-transport properties.Read more
Bulk NiMnSb reference system used for electronic-structure calculations.1 characterization3 propertiesSimulated Supercell DftNiMnSbStudied MaterialExpand
Monolayer MoS₂ spacer used in transport modeling.1 characterization1 propertySimulated Supercell DftMoS₂Studied MaterialExpand
Three-layer MoS₂ spacer used in transport modeling.1 characterizationSimulated Supercell DftMoS₂Studied MaterialExpand
NiMnSb/MoS₂ monolayer/NiMnSb magnetic tunnel junction with Mn-S or Sb-S interface termination.1 characterizationSimulated Supercell DftNiMnSbStudied MaterialMoS₂Studied MaterialExpand
NiMnSb/MoS₂ three-layer/NiMnSb magnetic tunnel junction with Mn-S or Sb-S interface termination.1 characterization1 propertySimulated Supercell DftNiMnSbStudied MaterialMoS₂Studied MaterialExpand
Research paperComputational DFTTheoreticalSpin-dependent electronic transport in NiMnSb/MoS₂(001)/NiMnSb magnetic tunnel junctionAloka Ranjan Sahoo, Sharat Chandra2025·10.48550/arxiv.2504.15614·arXiv:2504.15614AbstractHalf-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into semiconducting barriers at ferromagnet-semiconductor junctions. Combining density functional theory and non-equilibrium Green’s function methods, the electronic structure and spin-dependent electron transport in NiMnSb/MoS₂(001)/NiMnSb magnetic tunnel junctions are studied. The work examines spin injection into MoS₂ using half-metallic NiMnSb electrodes, the effect of MoS₂ thickness, and the effect of interface type (Mn-S versus Sb-S) on electronic structure and spin-transport properties.Read more
Bulk NiMnSb reference system used for electronic-structure calculations.1 characterization3 propertiesSimulated Supercell DftNiMnSbStudied MaterialExpand
Monolayer MoS₂ spacer used in transport modeling.1 characterization1 propertySimulated Supercell DftMoS₂Studied MaterialExpand
Three-layer MoS₂ spacer used in transport modeling.1 characterizationSimulated Supercell DftMoS₂Studied MaterialExpand
NiMnSb/MoS₂ monolayer/NiMnSb magnetic tunnel junction with Mn-S or Sb-S interface termination.1 characterizationSimulated Supercell DftNiMnSbStudied MaterialMoS₂Studied MaterialExpand
NiMnSb/MoS₂ three-layer/NiMnSb magnetic tunnel junction with Mn-S or Sb-S interface termination.1 characterization1 propertySimulated Supercell DftNiMnSbStudied MaterialMoS₂Studied MaterialExpand
