Abstract

Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC/m, outperforming most known 2D ferroelectric. We demonstrate electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance.

Abstract

Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC/m, outperforming most known 2D ferroelectric. We demonstrate electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance.

Abstract

Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC/m, outperforming most known 2D ferroelectric. We demonstrate electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance.

Abstract

Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC/m, outperforming most known 2D ferroelectric. We demonstrate electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance.