Abstract

Low-dimensional semiconductors have been widely exploited in thermoelectric energy conversion for high efficiencies due to their suppressed lattice thermal conduction, sharply defined electronic density of states, and tunable energy-selective electron transmission. However, the widespread challenge of Fermi-level pinning or doping constraints limit precise control over thermoelectric energy management via chemical potential modulation. Here, we proposed an alternative strategy: leveraging angle-dependent electron incidence to dynamically manipulate electron transmission and heat transport, which was implemented theoretically in a two-dimensional InP/InAs/InP double-barrier heterostructure integrated with laterally one-dimensional electrodes. By combining the transfer matrix method and Landauer formalism, we demonstrated the angle-dependent resonant tunneling dynamics, tunable negative differential resistance effect, and near-Carnot limits in thermoelectric energy conversions. Angular modulation enables precise control over transmission resonances, facilitating dynamic transitions among thermoelectric regimes (power generation, cooling, and hybrid heating) without requiring extreme chemical potential shifts. This work establishes angularly resolved electron transmission as a versatile mechanism for on-chip thermal management and cryogenic applications, offering a pathway to circumvent material limitations in next-generation nanoelectronics and quantum devices.

Abstract

Low-dimensional semiconductors have been widely exploited in thermoelectric energy conversion for high efficiencies due to their suppressed lattice thermal conduction, sharply defined electronic density of states, and tunable energy-selective electron transmission. However, the widespread challenge of Fermi-level pinning or doping constraints limit precise control over thermoelectric energy management via chemical potential modulation. Here, we proposed an alternative strategy: leveraging angle-dependent electron incidence to dynamically manipulate electron transmission and heat transport, which was implemented theoretically in a two-dimensional InP/InAs/InP double-barrier heterostructure integrated with laterally one-dimensional electrodes. By combining the transfer matrix method and Landauer formalism, we demonstrated the angle-dependent resonant tunneling dynamics, tunable negative differential resistance effect, and near-Carnot limits in thermoelectric energy conversions. Angular modulation enables precise control over transmission resonances, facilitating dynamic transitions among thermoelectric regimes (power generation, cooling, and hybrid heating) without requiring extreme chemical potential shifts. This work establishes angularly resolved electron transmission as a versatile mechanism for on-chip thermal management and cryogenic applications, offering a pathway to circumvent material limitations in next-generation nanoelectronics and quantum devices.

Abstract

Low-dimensional semiconductors have been widely exploited in thermoelectric energy conversion for high efficiencies due to their suppressed lattice thermal conduction, sharply defined electronic density of states, and tunable energy-selective electron transmission. However, the widespread challenge of Fermi-level pinning or doping constraints limit precise control over thermoelectric energy management via chemical potential modulation. Here, we proposed an alternative strategy: leveraging angle-dependent electron incidence to dynamically manipulate electron transmission and heat transport, which was implemented theoretically in a two-dimensional InP/InAs/InP double-barrier heterostructure integrated with laterally one-dimensional electrodes. By combining the transfer matrix method and Landauer formalism, we demonstrated the angle-dependent resonant tunneling dynamics, tunable negative differential resistance effect, and near-Carnot limits in thermoelectric energy conversions. Angular modulation enables precise control over transmission resonances, facilitating dynamic transitions among thermoelectric regimes (power generation, cooling, and hybrid heating) without requiring extreme chemical potential shifts. This work establishes angularly resolved electron transmission as a versatile mechanism for on-chip thermal management and cryogenic applications, offering a pathway to circumvent material limitations in next-generation nanoelectronics and quantum devices.

Abstract

Low-dimensional semiconductors have been widely exploited in thermoelectric energy conversion for high efficiencies due to their suppressed lattice thermal conduction, sharply defined electronic density of states, and tunable energy-selective electron transmission. However, the widespread challenge of Fermi-level pinning or doping constraints limit precise control over thermoelectric energy management via chemical potential modulation. Here, we proposed an alternative strategy: leveraging angle-dependent electron incidence to dynamically manipulate electron transmission and heat transport, which was implemented theoretically in a two-dimensional InP/InAs/InP double-barrier heterostructure integrated with laterally one-dimensional electrodes. By combining the transfer matrix method and Landauer formalism, we demonstrated the angle-dependent resonant tunneling dynamics, tunable negative differential resistance effect, and near-Carnot limits in thermoelectric energy conversions. Angular modulation enables precise control over transmission resonances, facilitating dynamic transitions among thermoelectric regimes (power generation, cooling, and hybrid heating) without requiring extreme chemical potential shifts. This work establishes angularly resolved electron transmission as a versatile mechanism for on-chip thermal management and cryogenic applications, offering a pathway to circumvent material limitations in next-generation nanoelectronics and quantum devices.