Abstract

The results of systematic experimental studies of quantum oscillations of resistivity, Hall coefficient and capacitance in GaAs and InxGa1−xAs quantum wells (QWs) with a simple electron spectrum and HgTe QWs with a complicated non-parabolic spectrum and strong spin-orbit interaction are reported. A striking result is the ratio of the amplitudes of the resistance and Hall coefficient oscillations. In GaAs QW with a simple spectrum characterized by negligibly small Zeeman and spin-orbit splitting, the ratio of amplitudes is close to that predicted theoretically. In HgTe QWs, this ratio is very different and behaves differently in QWs with normal and inverted electron spectra. In HgTe QWs with a normal spectrum, it tends to a theoretical value with an increase of the filling factor (N), while for HgTe QWs with an inverted spectrum, it differs significantly from the theoretical one for all available N. It is assumed that such a difference in the ratio of amplitudes in GaAs and HgTe QWs is due not to the peculiarities of the energy spectrum of HgTe, but to the peculiarities of electron scattering due to spin-orbit interaction with the potential of the scatterers. This assumption is justified by analysis of experimental results obtained for a heterostructure with a In0.2Ga0.8As QW, which spectrum is very close to the GaAs QW spectrum, but characterizes by much stronger spin-orbit splitting value. It has been found that the positions of the resistance and capacitance oscillations, the difference between the phases of the resistance and Hall coefficient oscillations and its N dependence are close to those observed in GaAs QW. At the same time the ratio of the amplitude of the resistance oscillations to the Hall coefficient oscillations and its N dependence differs very strongly and they are close to that observed in HgTe quantum wells.

Abstract

The results of systematic experimental studies of quantum oscillations of resistivity, Hall coefficient and capacitance in GaAs and InxGa1−xAs quantum wells (QWs) with a simple electron spectrum and HgTe QWs with a complicated non-parabolic spectrum and strong spin-orbit interaction are reported. A striking result is the ratio of the amplitudes of the resistance and Hall coefficient oscillations. In GaAs QW with a simple spectrum characterized by negligibly small Zeeman and spin-orbit splitting, the ratio of amplitudes is close to that predicted theoretically. In HgTe QWs, this ratio is very different and behaves differently in QWs with normal and inverted electron spectra. In HgTe QWs with a normal spectrum, it tends to a theoretical value with an increase of the filling factor (N), while for HgTe QWs with an inverted spectrum, it differs significantly from the theoretical one for all available N. It is assumed that such a difference in the ratio of amplitudes in GaAs and HgTe QWs is due not to the peculiarities of the energy spectrum of HgTe, but to the peculiarities of electron scattering due to spin-orbit interaction with the potential of the scatterers. This assumption is justified by analysis of experimental results obtained for a heterostructure with a In0.2Ga0.8As QW, which spectrum is very close to the GaAs QW spectrum, but characterizes by much stronger spin-orbit splitting value. It has been found that the positions of the resistance and capacitance oscillations, the difference between the phases of the resistance and Hall coefficient oscillations and its N dependence are close to those observed in GaAs QW. At the same time the ratio of the amplitude of the resistance oscillations to the Hall coefficient oscillations and its N dependence differs very strongly and they are close to that observed in HgTe quantum wells.

Abstract

The results of systematic experimental studies of quantum oscillations of resistivity, Hall coefficient and capacitance in GaAs and InxGa1−xAs quantum wells (QWs) with a simple electron spectrum and HgTe QWs with a complicated non-parabolic spectrum and strong spin-orbit interaction are reported. A striking result is the ratio of the amplitudes of the resistance and Hall coefficient oscillations. In GaAs QW with a simple spectrum characterized by negligibly small Zeeman and spin-orbit splitting, the ratio of amplitudes is close to that predicted theoretically. In HgTe QWs, this ratio is very different and behaves differently in QWs with normal and inverted electron spectra. In HgTe QWs with a normal spectrum, it tends to a theoretical value with an increase of the filling factor (N), while for HgTe QWs with an inverted spectrum, it differs significantly from the theoretical one for all available N. It is assumed that such a difference in the ratio of amplitudes in GaAs and HgTe QWs is due not to the peculiarities of the energy spectrum of HgTe, but to the peculiarities of electron scattering due to spin-orbit interaction with the potential of the scatterers. This assumption is justified by analysis of experimental results obtained for a heterostructure with a In0.2Ga0.8As QW, which spectrum is very close to the GaAs QW spectrum, but characterizes by much stronger spin-orbit splitting value. It has been found that the positions of the resistance and capacitance oscillations, the difference between the phases of the resistance and Hall coefficient oscillations and its N dependence are close to those observed in GaAs QW. At the same time the ratio of the amplitude of the resistance oscillations to the Hall coefficient oscillations and its N dependence differs very strongly and they are close to that observed in HgTe quantum wells.

Abstract

The results of systematic experimental studies of quantum oscillations of resistivity, Hall coefficient and capacitance in GaAs and InxGa1−xAs quantum wells (QWs) with a simple electron spectrum and HgTe QWs with a complicated non-parabolic spectrum and strong spin-orbit interaction are reported. A striking result is the ratio of the amplitudes of the resistance and Hall coefficient oscillations. In GaAs QW with a simple spectrum characterized by negligibly small Zeeman and spin-orbit splitting, the ratio of amplitudes is close to that predicted theoretically. In HgTe QWs, this ratio is very different and behaves differently in QWs with normal and inverted electron spectra. In HgTe QWs with a normal spectrum, it tends to a theoretical value with an increase of the filling factor (N), while for HgTe QWs with an inverted spectrum, it differs significantly from the theoretical one for all available N. It is assumed that such a difference in the ratio of amplitudes in GaAs and HgTe QWs is due not to the peculiarities of the energy spectrum of HgTe, but to the peculiarities of electron scattering due to spin-orbit interaction with the potential of the scatterers. This assumption is justified by analysis of experimental results obtained for a heterostructure with a In0.2Ga0.8As QW, which spectrum is very close to the GaAs QW spectrum, but characterizes by much stronger spin-orbit splitting value. It has been found that the positions of the resistance and capacitance oscillations, the difference between the phases of the resistance and Hall coefficient oscillations and its N dependence are close to those observed in GaAs QW. At the same time the ratio of the amplitude of the resistance oscillations to the Hall coefficient oscillations and its N dependence differs very strongly and they are close to that observed in HgTe quantum wells.