Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations4 properties2 figures
4 preparations2 characterizations1 property2 figures
Related documents with shared materials, methods, properties, or citations.
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
TUNNEL JUNCTION FOR GaAS BASED VCSELS AND METHOD THEREFOR
Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths
Excited-State Trions in a Quantum Well
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
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High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
Quantum oscillations of transport coefficients and capacitance: an unexpected manifestation of the spin-Hall effect
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations4 properties2 figures
4 preparations2 characterizations1 property2 figures
Related documents with shared materials, methods, properties, or citations.
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
TUNNEL JUNCTION FOR GaAS BASED VCSELS AND METHOD THEREFOR
Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths
Excited-State Trions in a Quantum Well
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
Quantum oscillations of transport coefficients and capacitance: an unexpected manifestation of the spin-Hall effect
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations4 properties2 figures
4 preparations2 characterizations1 property2 figures
Related documents with shared materials, methods, properties, or citations.
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
TUNNEL JUNCTION FOR GaAS BASED VCSELS AND METHOD THEREFOR
Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths
Excited-State Trions in a Quantum Well
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
Quantum oscillations of transport coefficients and capacitance: an unexpected manifestation of the spin-Hall effect
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations4 properties2 figures
4 preparations2 characterizations1 property2 figures
Related documents with shared materials, methods, properties, or citations.
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
TUNNEL JUNCTION FOR GaAS BASED VCSELS AND METHOD THEREFOR
Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths
Excited-State Trions in a Quantum Well
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
Quantum oscillations of transport coefficients and capacitance: an unexpected manifestation of the spin-Hall effect
