Research paper
Experimental CharacterizationOther ComputationalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Model Performance Mae | QKAR MAE | 0.338Ω·mm | — | |||
| Model Performance Mae | QNN MAE | 0.54Ω·mm | — | |||
| Noise Robustness Noise Level | two-qubit depolarizing noise | 0.5% | — | |||
| Noise Robustness Noise Level | single-qubit depolarizing noise | 1% | — |
Related documents with shared materials, methods, properties, or citations.
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Model Performance Mae | QKAR MAE | 0.338Ω·mm | — | |||
| Model Performance Mae | QNN MAE | 0.54Ω·mm | — | |||
| Noise Robustness Noise Level | two-qubit depolarizing noise | 0.5% | — | |||
| Noise Robustness Noise Level | single-qubit depolarizing noise | 1% | — |
Related documents with shared materials, methods, properties, or citations.
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Model Performance Mae | QKAR MAE | 0.338Ω·mm | — | |||
| Model Performance Mae | QNN MAE | 0.54Ω·mm | — | |||
| Noise Robustness Noise Level | two-qubit depolarizing noise | 0.5% | — | |||
| Noise Robustness Noise Level | single-qubit depolarizing noise | 1% | — |
Related documents with shared materials, methods, properties, or citations.
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Model Performance Mae | QKAR MAE | 0.338Ω·mm | — | |||
| Model Performance Mae | QNN MAE | 0.54Ω·mm | — | |||
| Noise Robustness Noise Level | two-qubit depolarizing noise | 0.5% | — | |||
| Noise Robustness Noise Level | single-qubit depolarizing noise | 1% | — |
Related documents with shared materials, methods, properties, or citations.
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas