Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Assembled device comprising monolayer WSe₂ encapsulated by hBN, contacted/grounded by few-layer graphene, with top and bottom metallic single-walled carbon nanotube gates on SiO₂/Si.
3 characterizations7 properties5 figures
ExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricCCapping Or Contact
Electrostatic simulation model of CNT-gated monolayer WSe₂ device used to compute doping density and confinement radius.
2 properties
SimulatedWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricCCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Assembled device comprising monolayer WSe₂ encapsulated by hBN, contacted/grounded by few-layer graphene, with top and bottom metallic single-walled carbon nanotube gates on SiO₂/Si.
3 characterizations7 properties5 figures
ExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricCCapping Or Contact
Electrostatic simulation model of CNT-gated monolayer WSe₂ device used to compute doping density and confinement radius.
2 properties
SimulatedWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricCCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Assembled device comprising monolayer WSe₂ encapsulated by hBN, contacted/grounded by few-layer graphene, with top and bottom metallic single-walled carbon nanotube gates on SiO₂/Si.
3 characterizations7 properties5 figures
ExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricCCapping Or Contact
Electrostatic simulation model of CNT-gated monolayer WSe₂ device used to compute doping density and confinement radius.
2 properties
SimulatedWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricCCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Assembled device comprising monolayer WSe₂ encapsulated by hBN, contacted/grounded by few-layer graphene, with top and bottom metallic single-walled carbon nanotube gates on SiO₂/Si.
3 characterizations7 properties5 figures
ExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricCCapping Or Contact
Electrostatic simulation model of CNT-gated monolayer WSe₂ device used to compute doping density and confinement radius.
2 properties
SimulatedWSe₂Studied MaterialhBNSubstrate / DielectricCCapping Or ContactSiO₂Substrate / DielectricSiSubstrate / DielectricCCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.