Research paper
Experimental GrowthExperimental CharacterizationComputational DFTComputational MLIPEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation6 characterizations4 properties3 figures
1 preparation6 characterizations3 figures
1 preparation6 characterizations3 figures
1 preparation1 characterization1 property1 figure
1 preparation1 characterization1 figure
1 property
1 property
2 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E2g | 1369cm⁻¹ | — | |||
| Raman Peak | A1g | 314cm⁻¹ | — | |||
| Nanotube Diameter | SnS₂ NT diameter range | 1.5-10nm | — | |||
| Chirality Fraction | armchair enrichment | 84% | — | |||
| Chirality Fraction | achiral fraction (armchair + zigzag) | 90% | — | |||
| Mechanistic Energy Per Length | BNNT collapse barrier | 0.1eV/Å | — | |||
| Mechanistic Energy Per Length | net energy change on collapsed BNNT-SnS₂ configuration | -0.6eV/Å | — | |||
| Formation Energy Difference | armchair vs zigzag nanotube formation energy difference | negligible | — |
Related documents with shared materials, methods, properties, or citations.
Metallic NbS2 one-dimensional van der Waals heterostructures
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Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Opto-twistronic Hall effect in a three-dimensional spiral lattice
NOVEL GROWTH METHODS FOR CONTROLLED LARGE-AREA FABRICATION OF HIGH-QUALITY GRAPHENE ANALOGS
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Enhancement of Second Harmonic Generation in Monolayer WS2 by Feedback-Based Wavefront Shaping
METHOD OF MAKING DEVICES INCLUDING GRAPHENE LAYERS EPITAXIALLY GROWN ON SINGLE CRYSTAL SUBSTRATES
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation6 characterizations4 properties3 figures
1 preparation6 characterizations3 figures
1 preparation6 characterizations3 figures
1 preparation1 characterization1 property1 figure
1 preparation1 characterization1 figure
1 property
1 property
2 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E2g | 1369cm⁻¹ | — | |||
| Raman Peak | A1g | 314cm⁻¹ | — | |||
| Nanotube Diameter | SnS₂ NT diameter range | 1.5-10nm | — | |||
| Chirality Fraction | armchair enrichment | 84% | — | |||
| Chirality Fraction | achiral fraction (armchair + zigzag) | 90% | — | |||
| Mechanistic Energy Per Length | BNNT collapse barrier | 0.1eV/Å | — | |||
| Mechanistic Energy Per Length | net energy change on collapsed BNNT-SnS₂ configuration | -0.6eV/Å | — | |||
| Formation Energy Difference | armchair vs zigzag nanotube formation energy difference | negligible | — |
Related documents with shared materials, methods, properties, or citations.
Metallic NbS2 one-dimensional van der Waals heterostructures
Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
Band alignment and interlayer hybridisation in transition metal dichalcogenide/hexagonal boron nitride heterostructures
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Opto-twistronic Hall effect in a three-dimensional spiral lattice
NOVEL GROWTH METHODS FOR CONTROLLED LARGE-AREA FABRICATION OF HIGH-QUALITY GRAPHENE ANALOGS
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Enhancement of Second Harmonic Generation in Monolayer WS2 by Feedback-Based Wavefront Shaping
METHOD OF MAKING DEVICES INCLUDING GRAPHENE LAYERS EPITAXIALLY GROWN ON SINGLE CRYSTAL SUBSTRATES
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation6 characterizations4 properties3 figures
1 preparation6 characterizations3 figures
1 preparation6 characterizations3 figures
1 preparation1 characterization1 property1 figure
1 preparation1 characterization1 figure
1 property
1 property
2 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E2g | 1369cm⁻¹ | — | |||
| Raman Peak | A1g | 314cm⁻¹ | — | |||
| Nanotube Diameter | SnS₂ NT diameter range | 1.5-10nm | — | |||
| Chirality Fraction | armchair enrichment | 84% | — | |||
| Chirality Fraction | achiral fraction (armchair + zigzag) | 90% | — | |||
| Mechanistic Energy Per Length | BNNT collapse barrier | 0.1eV/Å | — | |||
| Mechanistic Energy Per Length | net energy change on collapsed BNNT-SnS₂ configuration | -0.6eV/Å | — | |||
| Formation Energy Difference | armchair vs zigzag nanotube formation energy difference | negligible | — |
Related documents with shared materials, methods, properties, or citations.
Metallic NbS2 one-dimensional van der Waals heterostructures
Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
Band alignment and interlayer hybridisation in transition metal dichalcogenide/hexagonal boron nitride heterostructures
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Opto-twistronic Hall effect in a three-dimensional spiral lattice
NOVEL GROWTH METHODS FOR CONTROLLED LARGE-AREA FABRICATION OF HIGH-QUALITY GRAPHENE ANALOGS
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Enhancement of Second Harmonic Generation in Monolayer WS2 by Feedback-Based Wavefront Shaping
METHOD OF MAKING DEVICES INCLUDING GRAPHENE LAYERS EPITAXIALLY GROWN ON SINGLE CRYSTAL SUBSTRATES
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation6 characterizations4 properties3 figures
1 preparation6 characterizations3 figures
1 preparation6 characterizations3 figures
1 preparation1 characterization1 property1 figure
1 preparation1 characterization1 figure
1 property
1 property
2 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | E2g | 1369cm⁻¹ | — | |||
| Raman Peak | A1g | 314cm⁻¹ | — | |||
| Nanotube Diameter | SnS₂ NT diameter range | 1.5-10nm | — | |||
| Chirality Fraction | armchair enrichment | 84% | — | |||
| Chirality Fraction | achiral fraction (armchair + zigzag) | 90% | — | |||
| Mechanistic Energy Per Length | BNNT collapse barrier | 0.1eV/Å | — | |||
| Mechanistic Energy Per Length | net energy change on collapsed BNNT-SnS₂ configuration | -0.6eV/Å | — | |||
| Formation Energy Difference | armchair vs zigzag nanotube formation energy difference | negligible | — |
Related documents with shared materials, methods, properties, or citations.
Metallic NbS2 one-dimensional van der Waals heterostructures
Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices
Catalytic growth of ultralong graphene nanoribbons on insulating substrates
Band alignment and interlayer hybridisation in transition metal dichalcogenide/hexagonal boron nitride heterostructures
Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Opto-twistronic Hall effect in a three-dimensional spiral lattice
NOVEL GROWTH METHODS FOR CONTROLLED LARGE-AREA FABRICATION OF HIGH-QUALITY GRAPHENE ANALOGS
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Enhancement of Second Harmonic Generation in Monolayer WS2 by Feedback-Based Wavefront Shaping
METHOD OF MAKING DEVICES INCLUDING GRAPHENE LAYERS EPITAXIALLY GROWN ON SINGLE CRYSTAL SUBSTRATES