Analytical low-energy model / tight-binding-style band-structure analysis of Bernal-stacked bilayer graphene with strain and gate-induced potential difference; density of states evaluated from the model.
Settings
systembilayer graphene
stackingBernal
field contextin-plane electric and magnetic fields in planar Hall geometry
features analyzedband structure, density of states, chemical potential dependence, Lifshitz transition
Conditions
context:theoretical model used to illustrate 2DPHE
Analytical low-energy model / tight-binding-style band-structure analysis of Bernal-stacked bilayer graphene with strain and gate-induced potential difference; density of states evaluated from the model.
Settings
systembilayer graphene
stackingBernal
field contextin-plane electric and magnetic fields in planar Hall geometry
features analyzedband structure, density of states, chemical potential dependence, Lifshitz transition
Conditions
context:theoretical model used to illustrate 2DPHE
Analytical low-energy model / tight-binding-style band-structure analysis of Bernal-stacked bilayer graphene with strain and gate-induced potential difference; density of states evaluated from the model.
Settings
systembilayer graphene
stackingBernal
field contextin-plane electric and magnetic fields in planar Hall geometry
features analyzedband structure, density of states, chemical potential dependence, Lifshitz transition
Conditions
context:theoretical model used to illustrate 2DPHE
Analytical low-energy model / tight-binding-style band-structure analysis of Bernal-stacked bilayer graphene with strain and gate-induced potential difference; density of states evaluated from the model.
Settings
systembilayer graphene
stackingBernal
field contextin-plane electric and magnetic fields in planar Hall geometry
features analyzedband structure, density of states, chemical potential dependence, Lifshitz transition
Conditions
context:theoretical model used to illustrate 2DPHE