Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings

Sujatha Vijayakrishnan; Z. Berkson-Korenberg; J. Mainville; L. W. Engel; M. P. Lilly; K. W. West; L. N. Pfeiffer; G. Gervais

doi:10.1103/PhysRevResearch.7.L022029

Paper details

Research paper

Experimental CharacterizationTheoretical

Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings

Sujatha Vijayakrishnan, Z. Berkson-Korenberg, J. Mainville, L. W. Engel et al.

Physical Review Letters·2024·10.1103/PhysRevResearch.7.L022029·arXiv:2405.17588

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

1 preparation1 characterization6 properties1 figure

ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialGeCapping Or ContactAuCapping Or ContactNiCapping Or Contact

Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

1 preparation1 characterization4 properties1 figure

ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialGeCapping Or ContactAuCapping Or ContactNiCapping Or Contact

Materials

GaAs/AlGaAs heterostructure

Studied Material

Also known as

2DEG in GaAs/AlGaAs

Variables

mobility_cm2_Vs= 20300000,27800000

electron_density_cm2= 170000000000,360000000000

studied material

GaAs

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	electron density	170000000000cm⁻²	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Fet Carrier Concentration	electron density	360000000000cm⁻²	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Fet Mobility	electron mobility	20300000cm²/Vs	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Fet Mobility	electron mobility	27800000cm²/Vs	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	rs	1.32	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	rs	0.92	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	momentum-relaxing mean free path	138um	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	momentum-relaxing mean free path	271um	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	negative nonlocal signal change	~160% increase	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	local signal change	~33% decrease	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	electron density	170000000000cm⁻²	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Fet Carrier Concentration	electron density	360000000000cm⁻²	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Fet Mobility	electron mobility	20300000cm²/Vs	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Fet Mobility	electron mobility	27800000cm²/Vs	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	rs	1.32	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	rs	0.92	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	momentum-relaxing mean free path	138um	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	momentum-relaxing mean free path	271um	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	negative nonlocal signal change	~160% increase	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	local signal change	~33% decrease	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	electron density	170000000000cm⁻²	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Fet Carrier Concentration	electron density	360000000000cm⁻²	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Fet Mobility	electron mobility	20300000cm²/Vs	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Fet Mobility	electron mobility	27800000cm²/Vs	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	rs	1.32	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	rs	0.92	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	momentum-relaxing mean free path	138um	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	momentum-relaxing mean free path	271um	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	negative nonlocal signal change	~160% increase	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	local signal change	~33% decrease	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	electron density	170000000000cm⁻²	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Fet Carrier Concentration	electron density	360000000000cm⁻²	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Fet Mobility	electron mobility	20300000cm²/Vs	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Fet Mobility	electron mobility	27800000cm²/Vs	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	rs	1.32	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	rs	0.92	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	momentum-relaxing mean free path	138um	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	momentum-relaxing mean free path	271um	GaAs/AlGaAs heterostructure	Corbino device CBM301, a multi-terminal annular 2DEG device	—
Other	negative nonlocal signal change	~160% increase	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—
Other	local signal change	~33% decrease	GaAs/AlGaAs heterostructure	Corbino device CBM302, a multi-terminal annular 2DEG device	—

Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings

Samples

Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Materials

Why these are connected

Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings

Samples

Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Materials

Why these are connected

Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings

Samples

Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Materials

Why these are connected

Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings

Samples

Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Materials

Why these are connected

Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings

Samples

Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Materials

Why these are connected

Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings

Samples

Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Materials

Why these are connected

Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings

Samples

Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Materials

Why these are connected

Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings

Samples

Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

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Processing

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Processing

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Simulations