Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.
ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialGeCapping Or ContactAuCapping Or ContactNiCapping Or Contact
Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.
ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialGeCapping Or ContactAuCapping Or ContactNiCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.
ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialGeCapping Or ContactAuCapping Or ContactNiCapping Or Contact
Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.
ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialGeCapping Or ContactAuCapping Or ContactNiCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.
ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialGeCapping Or ContactAuCapping Or ContactNiCapping Or Contact
Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.
ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialGeCapping Or ContactAuCapping Or ContactNiCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Corbino device CBM302, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.
ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialGeCapping Or ContactAuCapping Or ContactNiCapping Or Contact
Corbino device CBM301, a multi-terminal annular 2DEG device in a symmetrically doped GaAs/AlGaAs heterostructure with ohmic contacts formed by diffused Ge/Au/Ni/Au layers.
ExperimentalGaAs/AlGaAs heterostructureStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialGeCapping Or ContactAuCapping Or ContactNiCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.