Abstract

Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap Eg = 6 eV, containing a negatively charged boron vacancy (V_B-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of V_B- spin polarization under optical pumping with 532 nm laser using high-frequency (94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P ≈ 38.4 %. The study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40 µs. Analysis of coherent electron-nuclear interaction through electron spin echo envelope modulation (ESEEM) made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a quadrupole coupling constant Cq = 180 kHz related to nuclear quadrupole moment of 14N.

Abstract

Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap Eg = 6 eV, containing a negatively charged boron vacancy (V_B-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of V_B- spin polarization under optical pumping with 532 nm laser using high-frequency (94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P ≈ 38.4 %. The study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40 µs. Analysis of coherent electron-nuclear interaction through electron spin echo envelope modulation (ESEEM) made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a quadrupole coupling constant Cq = 180 kHz related to nuclear quadrupole moment of 14N.

Abstract

Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap Eg = 6 eV, containing a negatively charged boron vacancy (V_B-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of V_B- spin polarization under optical pumping with 532 nm laser using high-frequency (94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P ≈ 38.4 %. The study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40 µs. Analysis of coherent electron-nuclear interaction through electron spin echo envelope modulation (ESEEM) made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a quadrupole coupling constant Cq = 180 kHz related to nuclear quadrupole moment of 14N.

Abstract

Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap Eg = 6 eV, containing a negatively charged boron vacancy (V_B-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of V_B- spin polarization under optical pumping with 532 nm laser using high-frequency (94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P ≈ 38.4 %. The study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40 µs. Analysis of coherent electron-nuclear interaction through electron spin echo envelope modulation (ESEEM) made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a quadrupole coupling constant Cq = 180 kHz related to nuclear quadrupole moment of 14N.