Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN

M. F. C. Martins Quintela; N. M. R. Peres

doi:10.3390/preprints202207.08787

Paper details

Research paper

TheoreticalComputed Raman

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN

M. F. C. Martins Quintela, N. M. R. Peres

Preprints·2022·10.3390/preprints202207.08787·arXiv:2207.08787

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Monolayer h-BN encapsulated by a dielectric medium, modeled with fused quartz as the surrounding dielectric environment.

2 properties

Simulatedh-BNStudied MaterialSiO₂Substrate / Dielectric

Materials

hexagonal boron nitride

h-BN

Studied Material

Also known as

hBN

studied material

fused quartz

SiO₂

Substrate / Dielectric

substrate or dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Formation Energy Ev	1s excitonic variational energy	-0.0589eV	h-BN	Monolayer h-BN encapsulated by a dielectric medium, modeled		—
Optical Band Gap	linewidth contribution	temperature and carrier-density dependent excitonic linewidth contribution from free-carrier scattering	h-BN	Monolayer h-BN encapsulated by a dielectric medium, modeled		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Formation Energy Ev	1s excitonic variational energy	-0.0589eV	h-BN	Monolayer h-BN encapsulated by a dielectric medium, modeled		—
Optical Band Gap	linewidth contribution	temperature and carrier-density dependent excitonic linewidth contribution from free-carrier scattering	h-BN	Monolayer h-BN encapsulated by a dielectric medium, modeled		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Formation Energy Ev	1s excitonic variational energy	-0.0589eV	h-BN	Monolayer h-BN encapsulated by a dielectric medium, modeled		—
Optical Band Gap	linewidth contribution	temperature and carrier-density dependent excitonic linewidth contribution from free-carrier scattering	h-BN	Monolayer h-BN encapsulated by a dielectric medium, modeled		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Formation Energy Ev	1s excitonic variational energy	-0.0589eV	h-BN	Monolayer h-BN encapsulated by a dielectric medium, modeled		—
Optical Band Gap	linewidth contribution	temperature and carrier-density dependent excitonic linewidth contribution from free-carrier scattering	h-BN	Monolayer h-BN encapsulated by a dielectric medium, modeled		—

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN

Samples

Monolayer h-BN encapsulated by a dielectric medium, modeled with fused quartz as the surrounding dielectric environment.

Materials

Why these are connected

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN

Samples

Monolayer h-BN encapsulated by a dielectric medium, modeled with fused quartz as the surrounding dielectric environment.

Materials

Why these are connected

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN

Samples

Monolayer h-BN encapsulated by a dielectric medium, modeled with fused quartz as the surrounding dielectric environment.

Materials

Why these are connected

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN

Samples

Monolayer h-BN encapsulated by a dielectric medium, modeled with fused quartz as the surrounding dielectric environment.

Materials

Why these are connected

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN

Samples

Monolayer h-BN encapsulated by a dielectric medium, modeled with fused quartz as the surrounding dielectric environment.

Materials

Why these are connected

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN

Samples

Monolayer h-BN encapsulated by a dielectric medium, modeled with fused quartz as the surrounding dielectric environment.

Materials

Why these are connected

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN

Samples

Monolayer h-BN encapsulated by a dielectric medium, modeled with fused quartz as the surrounding dielectric environment.

Materials

Why these are connected

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The example of h-BN

Samples

Monolayer h-BN encapsulated by a dielectric medium, modeled with fused quartz as the surrounding dielectric environment.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations