Abstract

Scanning-tunnelling spectroscopy at the AB and BA stacking points of magic-angle twisted bilayer graphene should reveal two asymmetric Van Hove peaks separated by ∆split ≈171 meV, arising from Hermitian ordering corrections of the Dirac Hamiltonian with spatially varying mass. The ordering term generates an emergent Aharonov–Bohm flux of h/(2e) at zeros of the effective mass and predicts a local spectral splitting that scales as √θ, is gate-voltage independent, and is spatially confined within rc ≈ 2.1 nm of each AB/BA point.

Abstract

Scanning-tunnelling spectroscopy at the AB and BA stacking points of magic-angle twisted bilayer graphene should reveal two asymmetric Van Hove peaks separated by ∆split ≈171 meV, arising from Hermitian ordering corrections of the Dirac Hamiltonian with spatially varying mass. The ordering term generates an emergent Aharonov–Bohm flux of h/(2e) at zeros of the effective mass and predicts a local spectral splitting that scales as √θ, is gate-voltage independent, and is spatially confined within rc ≈ 2.1 nm of each AB/BA point.

Abstract

Scanning-tunnelling spectroscopy at the AB and BA stacking points of magic-angle twisted bilayer graphene should reveal two asymmetric Van Hove peaks separated by ∆split ≈171 meV, arising from Hermitian ordering corrections of the Dirac Hamiltonian with spatially varying mass. The ordering term generates an emergent Aharonov–Bohm flux of h/(2e) at zeros of the effective mass and predicts a local spectral splitting that scales as √θ, is gate-voltage independent, and is spatially confined within rc ≈ 2.1 nm of each AB/BA point.

Abstract

Scanning-tunnelling spectroscopy at the AB and BA stacking points of magic-angle twisted bilayer graphene should reveal two asymmetric Van Hove peaks separated by ∆split ≈171 meV, arising from Hermitian ordering corrections of the Dirac Hamiltonian with spatially varying mass. The ordering term generates an emergent Aharonov–Bohm flux of h/(2e) at zeros of the effective mass and predicts a local spectral splitting that scales as √θ, is gate-voltage independent, and is spatially confined within rc ≈ 2.1 nm of each AB/BA point.