Research paperComputational DFTTheoreticalNonlinear photomagnetization in insulatorsBernardo S. Mendoza, Norberto Arzate-Plata, Nicolas Tancogne-Dejean, Benjamin M. FregosoarXiv·2024·10.1103/PhysRevB.110.224412·arXiv:2406.14748AbstractNonlinear photomagnetization is a process by which an oscillating electric field induces a static magnetization. The work shows by symmetry analysis that all 32 crystallographic point groups admit spin polarization using circularly polarized electric fields to second order, while only 29 point groups admit spin polarization using linearly polarized electric fields to second order. Density functional theory is used to compute the spectrum of the second-order electric spin susceptibility of prototypical semiconductors Te, Se, SnS2, GaAs, InSb, and Si.Read more
DFT-treated prototypical semiconductor Te used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftTeStudied MaterialExpand
DFT-treated prototypical semiconductor Se used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSeStudied MaterialExpand
DFT-treated prototypical semiconductor SnS₂ used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSnS₂Studied MaterialExpand
DFT-treated prototypical semiconductor GaAs used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftGaAsStudied MaterialExpand
DFT-treated prototypical semiconductor InSb used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftInSbStudied MaterialExpand
DFT-treated prototypical semiconductor Si used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSiStudied MaterialExpand
Research paperComputational DFTTheoreticalNonlinear photomagnetization in insulatorsBernardo S. Mendoza, Norberto Arzate-Plata, Nicolas Tancogne-Dejean, Benjamin M. FregosoarXiv·2024·10.1103/PhysRevB.110.224412·arXiv:2406.14748AbstractNonlinear photomagnetization is a process by which an oscillating electric field induces a static magnetization. The work shows by symmetry analysis that all 32 crystallographic point groups admit spin polarization using circularly polarized electric fields to second order, while only 29 point groups admit spin polarization using linearly polarized electric fields to second order. Density functional theory is used to compute the spectrum of the second-order electric spin susceptibility of prototypical semiconductors Te, Se, SnS2, GaAs, InSb, and Si.Read more
DFT-treated prototypical semiconductor Te used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftTeStudied MaterialExpand
DFT-treated prototypical semiconductor Se used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSeStudied MaterialExpand
DFT-treated prototypical semiconductor SnS₂ used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSnS₂Studied MaterialExpand
DFT-treated prototypical semiconductor GaAs used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftGaAsStudied MaterialExpand
DFT-treated prototypical semiconductor InSb used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftInSbStudied MaterialExpand
DFT-treated prototypical semiconductor Si used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSiStudied MaterialExpand
Research paperComputational DFTTheoreticalNonlinear photomagnetization in insulatorsBernardo S. Mendoza, Norberto Arzate-Plata, Nicolas Tancogne-Dejean, Benjamin M. FregosoarXiv·2024·10.1103/PhysRevB.110.224412·arXiv:2406.14748AbstractNonlinear photomagnetization is a process by which an oscillating electric field induces a static magnetization. The work shows by symmetry analysis that all 32 crystallographic point groups admit spin polarization using circularly polarized electric fields to second order, while only 29 point groups admit spin polarization using linearly polarized electric fields to second order. Density functional theory is used to compute the spectrum of the second-order electric spin susceptibility of prototypical semiconductors Te, Se, SnS2, GaAs, InSb, and Si.Read more
DFT-treated prototypical semiconductor Te used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftTeStudied MaterialExpand
DFT-treated prototypical semiconductor Se used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSeStudied MaterialExpand
DFT-treated prototypical semiconductor SnS₂ used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSnS₂Studied MaterialExpand
DFT-treated prototypical semiconductor GaAs used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftGaAsStudied MaterialExpand
DFT-treated prototypical semiconductor InSb used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftInSbStudied MaterialExpand
DFT-treated prototypical semiconductor Si used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSiStudied MaterialExpand
Research paperComputational DFTTheoreticalNonlinear photomagnetization in insulatorsBernardo S. Mendoza, Norberto Arzate-Plata, Nicolas Tancogne-Dejean, Benjamin M. FregosoarXiv·2024·10.1103/PhysRevB.110.224412·arXiv:2406.14748AbstractNonlinear photomagnetization is a process by which an oscillating electric field induces a static magnetization. The work shows by symmetry analysis that all 32 crystallographic point groups admit spin polarization using circularly polarized electric fields to second order, while only 29 point groups admit spin polarization using linearly polarized electric fields to second order. Density functional theory is used to compute the spectrum of the second-order electric spin susceptibility of prototypical semiconductors Te, Se, SnS2, GaAs, InSb, and Si.Read more
DFT-treated prototypical semiconductor Te used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftTeStudied MaterialExpand
DFT-treated prototypical semiconductor Se used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSeStudied MaterialExpand
DFT-treated prototypical semiconductor SnS₂ used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSnS₂Studied MaterialExpand
DFT-treated prototypical semiconductor GaAs used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftGaAsStudied MaterialExpand
DFT-treated prototypical semiconductor InSb used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftInSbStudied MaterialExpand
DFT-treated prototypical semiconductor Si used for spin-response pseudotensor calculations.No measurements recordedSimulated Supercell DftSiStudied MaterialExpand
