GALLIUM ARSENIDE SINGLE CRYSTAL AND PREPARATION METHOD THEREOF

Youjun GAO

Patent

Atlas literature

Patent

US 11,624,129

GALLIUM ARSENIDE SINGLE CRYSTAL AND PREPARATION METHOD THEREOF

Youjun GAO

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 0 dependent

1
IndependentGaAsSixAsyGaAs
A gallium arsenide single crystal, wherein, the gallium arsenide single crystal has a carrier concentration of 1x10 18 -4x10 18/cm 3, and a migration rate of 1700-2600 cm 2/v-s; the gallium arsenide single crystal obtained using Si XAsy compound as a dopant has a B content of at least 20% lower than that obtained using Si substance as a dopant at a same Si carrier concentration; and the B content of the gallium arsenide single crystal is 5x10 18/cm 3 or lower. Withdrawn
2
IndependentGaAsSixAsyGaAsB₂O₃
(Cu rr ently Amended) A preparation method for a gallium arsenide single crystal, comprising the following steps: before growth of the gallium arsenide single crystal, distributing a Si XAsy compound into a gallium arsenide polycrystal by: * y synthesizing the Si XAsy compound, adding the Si XAsy compound and a raw material gallium arsenide polycrystal into a single crystal growing vessel, and then growing a single crystal, which comprises: Step 1: synthesizing the Si x As, compound, comprising: (1) charging arsenic and silicon by a weight ratio of (0.5-5):1 into a ﬁrst quartz boat and a second quartz boat, respectively; (2) baking the ﬁrst quartz boat and the second quartz boat for 2-4 h in a vacuum environment with a vacuum degree of 1x10-4 -9x10 2 Pa; and (3) heating the ﬁrst quartz boat to 650-700 ° C, heating the second quartz boat to 1050-1450 °C; and holding for 2-4 h to obtain the Si xAsy compound, wherein a temperature of the second quartz boat is decreased by a gradient of 5-8 ° C/cm; and Step 2: growing the single crystal, comprising: p lacing the Si xAs, compound, the gallium arsenide polycrystal and boron oxide into the single crystal growing vessel to grow the single crystal. Currently amended
3
Independent
- 6. Canceled
6
Independent
Canceled
7
IndependentGaAsSixAsy
(Cu rr ently Amended) The preparation method for the gallium arsenide single crystal according to claim [[5]] 2, wherein, during synthesizing the Si xAsy compound in Step 1, the second quartz boat is heated to 1120-1150 °C. Currently amended
8
IndependentGaAsSixAsyGaAsB₂O₃
The preparation method for the gallium arsenide single crystal according to claim [[5]] 2, wherein, in Step 2, the Si xAsy compound, the gallium arsenide polycrystal and the boron oxide

Worked examples

Embodiments described in the patent, grouped by the materials and process steps they use.

Example 1

example section example

4 materials1 process step

A 4-inch gallium arsenide single crystal was prepared by the VGF/VB method using SixAsy compound as dopant. Arsenic (5.35 kg) was charged into a first PBN boat and gallium (5 kg) into a second PBN boat. The SixAsy compound was synthesized and incorporated into the gallium arsenide polycrystal before single crystal growth.

Materials

Materials described outside the worked examples.

arsenic

Precursor

silicon

Precursor For Dopant Synthesis

Process steps

Additional fabrication and treatment steps described in the patent.

Compound Synthesis

Step 1

Temperature

650, 700, 1050, 1450°C

Duration

120, 240 min

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
carrier migration rate of GaAs single crystal (SixAsy dopant)	—	GaAs
carrier concentration of GaAs single crystal	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GALLIUM ARSENIDE SINGLE CRYSTAL AND PREPARATION METHOD THEREOF | Matter42 Literature