Research paperTheoreticalComputed PhononMetal-semiconductor behavior along the line of stacking order change in gated multilayer grapheneW. JaskólskiarXiv preprint·2024·10.3390/ma17081915·arXiv:2403.11143AbstractWe investigate gated multilayer graphene with stacking order change along the armchair direction. We consider some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in k-space, so the topological gapless states from different valleys also overlap. However, these states strongly interact and split due to atomic-scale defects caused by the broken layers, yielding an effective energy gap. We find that for some gate voltages, the gap states cross and the metallic behavior along the stacking domain wall can be restored. In particular cases, a flat band appears at the Fermi energy. We show that for small variations of the gate voltage the charge occupying this band oscillates between the outer layers.Read more
Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.1 propertyCStudied MaterialExpand
Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.No measurements recordedCStudied MaterialExpand
Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.4 propertiesCStudied MaterialExpand
Research paperTheoreticalComputed PhononMetal-semiconductor behavior along the line of stacking order change in gated multilayer grapheneW. JaskólskiarXiv preprint·2024·10.3390/ma17081915·arXiv:2403.11143AbstractWe investigate gated multilayer graphene with stacking order change along the armchair direction. We consider some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in k-space, so the topological gapless states from different valleys also overlap. However, these states strongly interact and split due to atomic-scale defects caused by the broken layers, yielding an effective energy gap. We find that for some gate voltages, the gap states cross and the metallic behavior along the stacking domain wall can be restored. In particular cases, a flat band appears at the Fermi energy. We show that for small variations of the gate voltage the charge occupying this band oscillates between the outer layers.Read more
Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.1 propertyCStudied MaterialExpand
Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.No measurements recordedCStudied MaterialExpand
Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.4 propertiesCStudied MaterialExpand
Research paperTheoreticalComputed PhononMetal-semiconductor behavior along the line of stacking order change in gated multilayer grapheneW. JaskólskiarXiv preprint·2024·10.3390/ma17081915·arXiv:2403.11143AbstractWe investigate gated multilayer graphene with stacking order change along the armchair direction. We consider some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in k-space, so the topological gapless states from different valleys also overlap. However, these states strongly interact and split due to atomic-scale defects caused by the broken layers, yielding an effective energy gap. We find that for some gate voltages, the gap states cross and the metallic behavior along the stacking domain wall can be restored. In particular cases, a flat band appears at the Fermi energy. We show that for small variations of the gate voltage the charge occupying this band oscillates between the outer layers.Read more
Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.1 propertyCStudied MaterialExpand
Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.No measurements recordedCStudied MaterialExpand
Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.4 propertiesCStudied MaterialExpand
Research paperTheoreticalComputed PhononMetal-semiconductor behavior along the line of stacking order change in gated multilayer grapheneW. JaskólskiarXiv preprint·2024·10.3390/ma17081915·arXiv:2403.11143AbstractWe investigate gated multilayer graphene with stacking order change along the armchair direction. We consider some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in k-space, so the topological gapless states from different valleys also overlap. However, these states strongly interact and split due to atomic-scale defects caused by the broken layers, yielding an effective energy gap. We find that for some gate voltages, the gap states cross and the metallic behavior along the stacking domain wall can be restored. In particular cases, a flat band appears at the Fermi energy. We show that for small variations of the gate voltage the charge occupying this band oscillates between the outer layers.Read more
Simulated Bernal-stacked bilayer graphene with an armchair-direction stacking domain wall (AB/BA) and cracked layers to release shear strain.1 propertyCStudied MaterialExpand
Simulated trilayer graphene with an armchair-direction stacking domain wall (ABC/BAC) and cracked layers to release shear strain.No measurements recordedCStudied MaterialExpand
Simulated four-layer graphene with an armchair-direction stacking domain wall (ABCA/BACB) and cracked layers to release shear strain.4 propertiesCStudied MaterialExpand
