Research paper
Experimental GrowthExperimental CharacterizationComputational KmcEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations8 properties3 figures
5 preparations2 characterizations8 properties3 figures
5 preparations2 characterizations10 properties3 figures
5 preparations2 characterizations10 properties3 figures
5 preparations2 characterizations10 properties3 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ gate dielectric thickness | 150nm | Phase-pure GaAs/InAs core/shell nanowire device A with 300 nPhase-pure GaAs/InAs core/shell nanowire device B with 500 nPhase-pure GaAs/InAs core/shell nanowire device C with 600 nPhase-pure GaAs/InAs core/shell nanowire device D with 1.8 µPhase-pure GaAs/InAs core/shell nanowire device E with 2.0 µ | — | ||
| Length | Lc | 0.3um | — | |||
| Core Radius | rcore | 56nm | — | |||
| Shell Thickness | tshell | 37nm | — | |||
| Nanowire Radius | rtot | 93nm | — | |||
| Oscillation Frequency | f(h/e) | 3.6T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 7.2T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 75nm | — | |||
| Length | Lc | 0.5um | — | |||
| Core Radius | rcore | 71nm | — | |||
| Shell Thickness | tshell | 25nm | — | |||
| Nanowire Radius | rtot | 96nm | — | |||
| Oscillation Frequency | f(h/e) | 3.3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 6.7T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 72nm | — | |||
| Length | Lc | 0.6um | — | |||
| Core Radius | rcore | 65nm | — | |||
| Shell Thickness | tshell | 31nm | — | |||
| Nanowire Radius | rtot | 96nm | — | |||
| Oscillation Frequency | f(h/e) | 3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 5.9T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 8.5T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12.1T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 69nm | — | |||
| Length | Lc | 1.8um | — | |||
| Core Radius | rcore | 70nm | — | |||
| Shell Thickness | tshell | 27nm | — | |||
| Nanowire Radius | rtot | 97nm | — | |||
| Oscillation Frequency | f(h/e) | 3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 6T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 9T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 69nm | — | |||
| Length | Lc | 2um | — | |||
| Core Radius | rcore | 63nm | — | |||
| Shell Thickness | tshell | 27nm | — | |||
| Nanowire Radius | rtot | 90nm | — | |||
| Oscillation Frequency | f(h/e) | 3.1T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 5.8T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 9T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 70nm | — |
Related documents with shared materials, methods, properties, or citations.
Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires
Electron Microscopy Study of Core–Shell Nanowire Bending and Twisting
Hybrid Integration of Quantum Dot Single-Photon Sources with Lithium Tantalate Photonics for On-Chip Routing
Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications
Wetting of Ga droplets in SiO2/Si cavities: Application to self-assisted GaAs nanowire growth
Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width
Phonon interference effects in GaAs-GaP superlattice nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations8 properties3 figures
5 preparations2 characterizations8 properties3 figures
5 preparations2 characterizations10 properties3 figures
5 preparations2 characterizations10 properties3 figures
5 preparations2 characterizations10 properties3 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ gate dielectric thickness | 150nm | Phase-pure GaAs/InAs core/shell nanowire device A with 300 nPhase-pure GaAs/InAs core/shell nanowire device B with 500 nPhase-pure GaAs/InAs core/shell nanowire device C with 600 nPhase-pure GaAs/InAs core/shell nanowire device D with 1.8 µPhase-pure GaAs/InAs core/shell nanowire device E with 2.0 µ | — | ||
| Length | Lc | 0.3um | — | |||
| Core Radius | rcore | 56nm | — | |||
| Shell Thickness | tshell | 37nm | — | |||
| Nanowire Radius | rtot | 93nm | — | |||
| Oscillation Frequency | f(h/e) | 3.6T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 7.2T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 75nm | — | |||
| Length | Lc | 0.5um | — | |||
| Core Radius | rcore | 71nm | — | |||
| Shell Thickness | tshell | 25nm | — | |||
| Nanowire Radius | rtot | 96nm | — | |||
| Oscillation Frequency | f(h/e) | 3.3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 6.7T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 72nm | — | |||
| Length | Lc | 0.6um | — | |||
| Core Radius | rcore | 65nm | — | |||
| Shell Thickness | tshell | 31nm | — | |||
| Nanowire Radius | rtot | 96nm | — | |||
| Oscillation Frequency | f(h/e) | 3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 5.9T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 8.5T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12.1T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 69nm | — | |||
| Length | Lc | 1.8um | — | |||
| Core Radius | rcore | 70nm | — | |||
| Shell Thickness | tshell | 27nm | — | |||
| Nanowire Radius | rtot | 97nm | — | |||
| Oscillation Frequency | f(h/e) | 3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 6T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 9T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 69nm | — | |||
| Length | Lc | 2um | — | |||
| Core Radius | rcore | 63nm | — | |||
| Shell Thickness | tshell | 27nm | — | |||
| Nanowire Radius | rtot | 90nm | — | |||
| Oscillation Frequency | f(h/e) | 3.1T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 5.8T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 9T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 70nm | — |
Related documents with shared materials, methods, properties, or citations.
Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires
Electron Microscopy Study of Core–Shell Nanowire Bending and Twisting
Hybrid Integration of Quantum Dot Single-Photon Sources with Lithium Tantalate Photonics for On-Chip Routing
Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications
Wetting of Ga droplets in SiO2/Si cavities: Application to self-assisted GaAs nanowire growth
Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width
Phonon interference effects in GaAs-GaP superlattice nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations8 properties3 figures
5 preparations2 characterizations8 properties3 figures
5 preparations2 characterizations10 properties3 figures
5 preparations2 characterizations10 properties3 figures
5 preparations2 characterizations10 properties3 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ gate dielectric thickness | 150nm | Phase-pure GaAs/InAs core/shell nanowire device A with 300 nPhase-pure GaAs/InAs core/shell nanowire device B with 500 nPhase-pure GaAs/InAs core/shell nanowire device C with 600 nPhase-pure GaAs/InAs core/shell nanowire device D with 1.8 µPhase-pure GaAs/InAs core/shell nanowire device E with 2.0 µ | — | ||
| Length | Lc | 0.3um | — | |||
| Core Radius | rcore | 56nm | — | |||
| Shell Thickness | tshell | 37nm | — | |||
| Nanowire Radius | rtot | 93nm | — | |||
| Oscillation Frequency | f(h/e) | 3.6T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 7.2T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 75nm | — | |||
| Length | Lc | 0.5um | — | |||
| Core Radius | rcore | 71nm | — | |||
| Shell Thickness | tshell | 25nm | — | |||
| Nanowire Radius | rtot | 96nm | — | |||
| Oscillation Frequency | f(h/e) | 3.3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 6.7T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 72nm | — | |||
| Length | Lc | 0.6um | — | |||
| Core Radius | rcore | 65nm | — | |||
| Shell Thickness | tshell | 31nm | — | |||
| Nanowire Radius | rtot | 96nm | — | |||
| Oscillation Frequency | f(h/e) | 3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 5.9T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 8.5T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12.1T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 69nm | — | |||
| Length | Lc | 1.8um | — | |||
| Core Radius | rcore | 70nm | — | |||
| Shell Thickness | tshell | 27nm | — | |||
| Nanowire Radius | rtot | 97nm | — | |||
| Oscillation Frequency | f(h/e) | 3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 6T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 9T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 69nm | — | |||
| Length | Lc | 2um | — | |||
| Core Radius | rcore | 63nm | — | |||
| Shell Thickness | tshell | 27nm | — | |||
| Nanowire Radius | rtot | 90nm | — | |||
| Oscillation Frequency | f(h/e) | 3.1T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 5.8T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 9T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 70nm | — |
Related documents with shared materials, methods, properties, or citations.
Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires
Electron Microscopy Study of Core–Shell Nanowire Bending and Twisting
Hybrid Integration of Quantum Dot Single-Photon Sources with Lithium Tantalate Photonics for On-Chip Routing
Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications
Wetting of Ga droplets in SiO2/Si cavities: Application to self-assisted GaAs nanowire growth
Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width
Phonon interference effects in GaAs-GaP superlattice nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations8 properties3 figures
5 preparations2 characterizations8 properties3 figures
5 preparations2 characterizations10 properties3 figures
5 preparations2 characterizations10 properties3 figures
5 preparations2 characterizations10 properties3 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ gate dielectric thickness | 150nm | Phase-pure GaAs/InAs core/shell nanowire device A with 300 nPhase-pure GaAs/InAs core/shell nanowire device B with 500 nPhase-pure GaAs/InAs core/shell nanowire device C with 600 nPhase-pure GaAs/InAs core/shell nanowire device D with 1.8 µPhase-pure GaAs/InAs core/shell nanowire device E with 2.0 µ | — | ||
| Length | Lc | 0.3um | — | |||
| Core Radius | rcore | 56nm | — | |||
| Shell Thickness | tshell | 37nm | — | |||
| Nanowire Radius | rtot | 93nm | — | |||
| Oscillation Frequency | f(h/e) | 3.6T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 7.2T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 75nm | — | |||
| Length | Lc | 0.5um | — | |||
| Core Radius | rcore | 71nm | — | |||
| Shell Thickness | tshell | 25nm | — | |||
| Nanowire Radius | rtot | 96nm | — | |||
| Oscillation Frequency | f(h/e) | 3.3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 6.7T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 72nm | — | |||
| Length | Lc | 0.6um | — | |||
| Core Radius | rcore | 65nm | — | |||
| Shell Thickness | tshell | 31nm | — | |||
| Nanowire Radius | rtot | 96nm | — | |||
| Oscillation Frequency | f(h/e) | 3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 5.9T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 8.5T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12.1T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 69nm | — | |||
| Length | Lc | 1.8um | — | |||
| Core Radius | rcore | 70nm | — | |||
| Shell Thickness | tshell | 27nm | — | |||
| Nanowire Radius | rtot | 97nm | — | |||
| Oscillation Frequency | f(h/e) | 3T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 6T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 9T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 69nm | — | |||
| Length | Lc | 2um | — | |||
| Core Radius | rcore | 63nm | — | |||
| Shell Thickness | tshell | 27nm | — | |||
| Nanowire Radius | rtot | 90nm | — | |||
| Oscillation Frequency | f(h/e) | 3.1T^-1 | — | |||
| Oscillation Frequency | f(h/2e) | 5.8T^-1 | — | |||
| Oscillation Frequency | f(h/3e) | 9T^-1 | — | |||
| Oscillation Frequency | f(h/4e) | 12T^-1 | — | |||
| Wavefunction Localization Radius | r(h/e) | 70nm | — |
Related documents with shared materials, methods, properties, or citations.
Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires
Electron Microscopy Study of Core–Shell Nanowire Bending and Twisting
Hybrid Integration of Quantum Dot Single-Photon Sources with Lithium Tantalate Photonics for On-Chip Routing
Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications
Wetting of Ga droplets in SiO2/Si cavities: Application to self-assisted GaAs nanowire growth
Enhancing Spin Diffusion in GaAs Quantum Wells: The Role of Electron Density and Channel Width
Phonon interference effects in GaAs-GaP superlattice nanowires