Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Farah Basarić; Vladan Brajović; Gerrit Behner; Kristof Moors; William Schaarman; Andrei Manolescu; Raghavendra Juluri; Ana M. Sanchez; Jin Hee Bae; Hans Lüth; Detlev Grützmacher; Alexander Pawlis; Thomas Schäpers

doi:10.48550/arXiv.2402.13880

Paper

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Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Farah Basarić, Vladan Brajović, Gerrit Behner, Kristof Moors et al.

arXiv preprint·2025·10.48550/arXiv.2402.13880·arXiv:2503.06789

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample A).

4 preparations2 characterizations9 properties2 figures

ExperimentalGaAsStudied MaterialInAsStudied Material

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample B).

4 preparations2 characterizations7 properties2 figures

ExperimentalGaAsStudied MaterialInAsStudied Material

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 2 (sample C).

4 preparations2 characterizations7 properties2 figures

ExperimentalGaAsStudied MaterialInAsStudied Material

Why these are connected

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