In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe2

Bairen Zhu; Ke Xiao; Siyuan Yang; Kenji Watanabe; Takashi Taniguchi; Xiaodong Cui

doi:10.1103/PhysRevLett.131.036901

Paper details

Research paper

Experimental CharacterizationTheoreticalComputed Phonon

In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe₂

Bairen Zhu, Ke Xiao, Siyuan Yang, Kenji Watanabe et al.

2023·10.1103/PhysRevLett.131.036901·arXiv:2302.11373

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

hBN-encapsulated monolayer WSe₂ device with few-layer graphene contacts transferred onto a transparent fused quartz substrate for photocurrent and reflectance measurements.

3 characterizations10 properties2 figures

ExperimentalWSe₂Studied Material

Materials

WSe₂

Studied Material

Also known as

monolayer WSe₂1L-WSe₂

Variables

dimensionality= monolayer

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe2 | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Energy Separation	A-2s above A-1s	135meV	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Energy Separation	B-2s above B-1s	159meV	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
In Plane Polarizability	A-1s	2e-17e m²/V	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
In Plane Polarizability	B-1s relative to A-1s	0.75	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Binding Energy Ratio	B exciton binding energy / A exciton binding energy	1.33	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	trion disappearance threshold	-3.1V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	lowest field used to observe hybrid excitons	1V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	highest field used to observe hybrid excitons	16V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	PL quenching threshold bias magnitude	10V	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Wavelength	excitation wavelength	515nm	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—

Properties

Type	Label	Value	Material	Sample	Source
Energy Separation	A-2s above A-1s	135meV	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Energy Separation	B-2s above B-1s	159meV	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
In Plane Polarizability	A-1s	2e-17e m²/V	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
In Plane Polarizability	B-1s relative to A-1s	0.75	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Binding Energy Ratio	B exciton binding energy / A exciton binding energy	1.33	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	trion disappearance threshold	-3.1V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	lowest field used to observe hybrid excitons	1V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	highest field used to observe hybrid excitons	16V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	PL quenching threshold bias magnitude	10V	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Wavelength	excitation wavelength	515nm	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—

Properties

Type	Label	Value	Material	Sample	Source
Energy Separation	A-2s above A-1s	135meV	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Energy Separation	B-2s above B-1s	159meV	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
In Plane Polarizability	A-1s	2e-17e m²/V	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
In Plane Polarizability	B-1s relative to A-1s	0.75	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Binding Energy Ratio	B exciton binding energy / A exciton binding energy	1.33	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	trion disappearance threshold	-3.1V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	lowest field used to observe hybrid excitons	1V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	highest field used to observe hybrid excitons	16V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	PL quenching threshold bias magnitude	10V	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Wavelength	excitation wavelength	515nm	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—

Properties

Type	Label	Value	Material	Sample	Source
Energy Separation	A-2s above A-1s	135meV	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Energy Separation	B-2s above B-1s	159meV	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
In Plane Polarizability	A-1s	2e-17e m²/V	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
In Plane Polarizability	B-1s relative to A-1s	0.75	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Binding Energy Ratio	B exciton binding energy / A exciton binding energy	1.33	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	trion disappearance threshold	-3.1V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	lowest field used to observe hybrid excitons	1V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	highest field used to observe hybrid excitons	16V/um	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Electric Field Strength	PL quenching threshold bias magnitude	10V	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—
Wavelength	excitation wavelength	515nm	WSe₂	hBN-encapsulated monolayer WSe₂ device with few-layer graphe	—

In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe₂

Samples

hBN-encapsulated monolayer WSe₂ device with few-layer graphene contacts transferred onto a transparent fused quartz substrate for photocurrent and reflectance measurements.

Materials

Why these are connected

In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe₂

Samples

hBN-encapsulated monolayer WSe₂ device with few-layer graphene contacts transferred onto a transparent fused quartz substrate for photocurrent and reflectance measurements.

Materials

Why these are connected

In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe₂

Samples

hBN-encapsulated monolayer WSe₂ device with few-layer graphene contacts transferred onto a transparent fused quartz substrate for photocurrent and reflectance measurements.

Materials

Why these are connected

In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe₂

Samples

hBN-encapsulated monolayer WSe₂ device with few-layer graphene contacts transferred onto a transparent fused quartz substrate for photocurrent and reflectance measurements.

Materials

Why these are connected

In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe₂

Samples

hBN-encapsulated monolayer WSe₂ device with few-layer graphene contacts transferred onto a transparent fused quartz substrate for photocurrent and reflectance measurements.

Materials

Why these are connected

In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe₂

Samples

hBN-encapsulated monolayer WSe₂ device with few-layer graphene contacts transferred onto a transparent fused quartz substrate for photocurrent and reflectance measurements.

Materials

Why these are connected

In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe₂

Samples

hBN-encapsulated monolayer WSe₂ device with few-layer graphene contacts transferred onto a transparent fused quartz substrate for photocurrent and reflectance measurements.

Materials

Why these are connected

In-Plane Electric Field Induced Orbital Hybridization of Excitonic States in Monolayer WSe₂

Samples

hBN-encapsulated monolayer WSe₂ device with few-layer graphene contacts transferred onto a transparent fused quartz substrate for photocurrent and reflectance measurements.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations