Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.
