Superconductivity in twisted bilayer WSe2

Y. Guo; J. Pack; J. Swann; L. Holtzman; M. Cothrine; K. Watanabe; T. Taniguchi; D.G. Mandrus; K. Barmak; J. Hone; A.J. Millis; A. Pasupathy; C.R. Dean

doi:10.1103/PhysRevLett.122.086402

Paper details

Research paper

Experimental Characterization

Superconductivity in twisted bilayer WSe₂

Y. Guo, J. Pack, J. Swann, L. Holtzman et al.

arXiv preprint·2024·10.1103/PhysRevLett.122.086402·arXiv:2406.03418

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.

1 preparation1 characterization5 properties1 figure

ExperimentalWSe₂Studied MaterialBNSubstrate / DielectricCCapping Or ContactRuCl₃Seed Promoter

Materials

WSe₂

Studied Material

Also known as

twisted bilayer WSe₂tWSe₂

Variables

twist_angle_deg= 5

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Superconductivity in twisted bilayer WSe2 | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Transport Critical Temperature	maximum critical temperature	426mK	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Twist Angle	twist angle	5deg	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Moire Wavelength	moiré wavelength	3.76nm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Transport Contact Resistance	contact resistance	12000ohm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Transport Contact Resistance	contact resistance	50000ohm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—

Properties

Type	Label	Value	Material	Sample	Source
Transport Critical Temperature	maximum critical temperature	426mK	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Twist Angle	twist angle	5deg	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Moire Wavelength	moiré wavelength	3.76nm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Transport Contact Resistance	contact resistance	12000ohm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Transport Contact Resistance	contact resistance	50000ohm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—

Properties

Type	Label	Value	Material	Sample	Source
Transport Critical Temperature	maximum critical temperature	426mK	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Twist Angle	twist angle	5deg	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Moire Wavelength	moiré wavelength	3.76nm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Transport Contact Resistance	contact resistance	12000ohm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Transport Contact Resistance	contact resistance	50000ohm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—

Properties

Type	Label	Value	Material	Sample	Source
Transport Critical Temperature	maximum critical temperature	426mK	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Twist Angle	twist angle	5deg	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Moire Wavelength	moiré wavelength	3.76nm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Transport Contact Resistance	contact resistance	12000ohm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—
Transport Contact Resistance	contact resistance	50000ohm	WSe₂	Twisted bilayer WSe₂ device assembled by dry transfer and cu	—

Superconductivity in twisted bilayer WSe₂

Samples

Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.

Materials

Why these are connected

Superconductivity in twisted bilayer WSe₂

Samples

Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.

Materials

Why these are connected

Superconductivity in twisted bilayer WSe₂

Samples

Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.

Materials

Why these are connected

Superconductivity in twisted bilayer WSe₂

Samples

Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.

Materials

Why these are connected

Superconductivity in twisted bilayer WSe₂

Samples

Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.

Materials

Why these are connected

Superconductivity in twisted bilayer WSe₂

Samples

Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.

Materials

Why these are connected

Superconductivity in twisted bilayer WSe₂

Samples

Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.

Materials

Why these are connected

Superconductivity in twisted bilayer WSe₂

Samples

Twisted bilayer WSe₂ device assembled by dry transfer and cut-and-stack technique with exfoliated hBN dielectric spacers, graphite contacts/gates, and RuCl₃ charge-transfer doping in the contact region.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties